The　current　high-resolution　quantum　dot　light-emitting　doides（QLEDs）fabricated　by　various　quantum　dots　patterning　techniques　suffer　from　low　efficiency，mainly　due　to　the　passage　of　large　leakage　currents　between　pixels.　To　solve　this　issue，a　honeycomb　Poly（methyl　methacrylate）（PMMA）film　was　fabricated　by　nanoimprint　technique　and　ap⁃　plied　as　a　charge　barrier　layer　in　the　QLED　light　emitting　layer.　The　resulting　red　QLEDs　with　a　resolution　of　8　467　pixel　per　inch（PPI）were　successfully　fabricated.　Due　to　the　good　insulating　properties　of　PMMA，the　charge　barrier　layer　suc⁃　cessfully　isolates　the　electron　transport　layer　and　the　hole　transport　layer.　Therefore，the　leakage　current　of　our　device　is　greatly　reduced　compared　to　the　device　without　charge　barrier　layer　patterning，and　the　external　quantum　efficiency　（EQE）is　greatly　improved，with　a　maximum　EQE　of　15.　31%　and　a　maximum　brightness　of　100　274　cd/m2　©　2025　Editorial　Office　of　Chinese　Optics.　All　rights　reserved.