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author:

Luo, Wang (Luo, Wang.) [1] | Li, Han (Li, Han.) [2] | Li, Zhuo (Li, Zhuo.) [3] | Yang, Shuting (Yang, Shuting.) [4] | Wang, Feng (Wang, Feng.) [5] | Wu, Lingkun (Wu, Lingkun.) [6] | Zhang, Huaiwu (Zhang, Huaiwu.) [7] | Yang, Qinghui (Yang, Qinghui.) [8]

Indexed by:

EI SCIE

Abstract:

The performance of rare-earth iron garnets (ReIGs) depends on their lattice integrity and heteroatomic substitution sites. However, the lack of information on microstructural evolution during the liquid-phase epitaxy (LPE) of ReIGs limits quality control and understanding of atomic substitution. Herein, density functional theory (DFT) and in situ Raman spectroscopy were used to reveal the microstructure geometry and self-assembly mechanism of (TbBi)3FeO5O12-based melts [(Fe2O3-Tb4O7-Bi2O3), 1; (Fe2O3-Tb4O7-Bi2O3-B2O3), 2]. Results show that both 1 and 2 exhibit anion and cation cluster characteristics with multi-level size distributions, in which chain-like ion clusters [Fe(iii)On-AO2-Fe(iii)O2-AOm][4-2(m+n)]- [A = Tb3+ or Bi3+; n (m) = 2 and 3] are confirmed to be the growth units of ReIGs due to their dominant presence in the melt. Notably, solidification kinetics show that the growth units of 1 restructure into periodic long chains [-AO2-Fe(iii)O2-]n2n- during cooling. Electrostatic potential analysis shows that the growth of ReIGs may follow the electrostatic bonding self-assembly of [Fe(iii)On-AO2-Fe(iii)O2-AOm][4-2(m+n)]- and free Fe3+ to form growth units with lattice structures, which are superimposed onto the growth interface to achieve the growth process. In addition, trace amounts of B2O3 enhance the freedom and stability of the system by increasing the concentration of non-bridging oxygen and interaction between the clusters. This work illustrates the self-assembly mechanism of the crystal growth of ReIGs at the atomic scale, providing new insights into the optimization of single-crystal performance by regulating the melt structure.

Keyword:

Community:

  • [ 1 ] [Luo, Wang]Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Device, Chengdu, Peoples R China
  • [ 2 ] [Li, Han]Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Device, Chengdu, Peoples R China
  • [ 3 ] [Li, Zhuo]Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Device, Chengdu, Peoples R China
  • [ 4 ] [Yang, Shuting]Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Device, Chengdu, Peoples R China
  • [ 5 ] [Wang, Feng]Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Device, Chengdu, Peoples R China
  • [ 6 ] [Zhang, Huaiwu]Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Device, Chengdu, Peoples R China
  • [ 7 ] [Yang, Qinghui]Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Device, Chengdu, Peoples R China
  • [ 8 ] [Wu, Lingkun]Fuzhou Univ, Coll Chem, Fuzhou 350016, Peoples R China

Reprint 's Address:

  • [Yang, Qinghui]Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Device, Chengdu, Peoples R China

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Source :

JOURNAL OF MATERIALS CHEMISTRY A

ISSN: 2050-7488

Year: 2025

Issue: 35

Volume: 13

Page: 29396-29403

1 0 . 8 0 0

JCR@2023

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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