Two-dimensional　(2D)　group　III-IV-VI　semiconductors　show　great　potential　for　application　in　energy　conversion　fields.　Herein,　using　density　functional　theory　(DFT)　calculations　in　conjunction　with　nonadiabatic　molecular　dynamics　(NAMD)　simulations　and　the　nonequilibrium　Green＇s　function　(NEGF)　method,　the　photovoltaic　performance　of　MGeSe　(M　=　Ga　and　In)　monolayers　is　systematically　investigated.　The　MGeSe　monolayers　exhibit　direct　band　gap　semiconductor　characteristics　with　strong　optical　absorption　in　the　visible　light　region.　Notably,　the　exciton　binding　energies　and　carrier　lifetimes　of　GaGeSe　(InGeSe)　are　0.49　eV　(0.50　eV)　and　0.20　ns　(2.82　ns),　respectively,　indicating　efficient　exciton　dissociation　and　charge　transport.　Moreover,　the　maximum　photocurrent　and　photoresponsivity　of　InGeSe　reach　19.4　A/m2　and　0.39　A/W,　highlighting　its　potential　for　high-efficiency　photovoltaic　applications.　These　findings　provide　valuable　insights　into　the　photovoltaic　behavior　of　MGeSe　monolayers　and　offer　theoretical　guidance　for　the　design　of　next-generation　2D　photovoltaic　materials.