In　this　work,　a　vertical　Ga2　O3　Schottky　barrier　diode　with　suspended　field　plate　assisted　shallow　mesa　termination　(SFPM-SBD)　is　proposed　and　fabricated.　The　optimized　self-aligned　ICP　etching　process,　which　introduces　Cl2　to　facilitate　the　isotropic　etching　of　Ga2　O3　,　is　developed　to　form　the　suspended　field　plate　and　shallow　mesa　termination.　Owing　to　the　effective　termination,　the　electric　field　crowding　phenomenon　at　the　device　edge　is　significantly　alleviated,　and　thus　the　fabricated　SFPM-SBD　features　a　high　breakdown　voltage　of　＞3.5　kV.　Besides,　a　low　specific　on　resistance　of　5.77　m　Ω　⋯　cm2　can　also　be　obtained　in　an　Au-free　process,　yielding　a　high　power　figure　of　merit　of　over　2.12GW/cm2.　Another　advantage　of　the　SFPM-SBD　is　its　very　simple　fabrication　process,　which,　coupled　with　high　performances,　makes　the　device　a　promising　candidate　for　multi-kilovolts　applications.　©　2025　The　Institute　of　Electrical　Engineers　of　Japan　-　IEEJ.