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author:

Hu, Wei (Hu, Wei.) [1] | Dai, Zhiming (Dai, Zhiming.) [2] | Wu, Chunlin (Wu, Chunlin.) [3] | Lin, Jiajun (Lin, Jiajun.) [4] | Ji, Chenxiao (Ji, Chenxiao.) [5] | Li, Fanyang (Li, Fanyang.) [6] | Wang, Faxiang (Wang, Faxiang.) [7]

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Abstract:

The device mismatch of non-volatile resistive random access memory (nvRRAM) and the performance limitations of conventional analog readout circuits cause low quantization precision and high power consumption in current RRAM-based computation circuits. To address these issues, we propose a Single-Reference Successive Approximation Current-Sense Amplifier (SRSA-CSA) based on single-reference source reuse and a closed-loop feedback architecture. Compared to state-of-the-art RS-CSA designs (Ye et al., 2023 [1]), SRSA-CSA achieves a 2.83× faster readout latency (30 ns vs. 85 ns) and 23.4 % lower power consumption (64.67 μW vs. 84.6 μW) under 180 nm CMOS technology, offering a new paradigm for energy-efficient computation-in-memory chip design. © 2025 Elsevier B.V.

Keyword:

Computer software reusability Electric power utilization Energy efficiency Feedback Green computing Integrated circuit design Low power electronics Memory architecture Quantization (signal) Readout systems RRAM

Community:

  • [ 1 ] [Hu, Wei]College of Physics and Information Engineering, Fuzhou University, Fujian, Fuzhou; 350108, China
  • [ 2 ] [Dai, Zhiming]College of Physics and Information Engineering, Fuzhou University, Fujian, Fuzhou; 350108, China
  • [ 3 ] [Wu, Chunlin]College of Physics and Information Engineering, Fuzhou University, Fujian, Fuzhou; 350108, China
  • [ 4 ] [Lin, Jiajun]Maynooth International Engineering College, Fuzhou University, Fujian, Fuzhou; 350108, China
  • [ 5 ] [Ji, Chenxiao]College of Physics and Information Engineering, Fuzhou University, Fujian, Fuzhou; 350108, China
  • [ 6 ] [Li, Fanyang]College of Physics and Information Engineering, Fuzhou University, Fujian, Fuzhou; 350108, China
  • [ 7 ] [Wang, Faxiang]College of Physics and Information Engineering, Fuzhou University, Fujian, Fuzhou; 350108, China

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Source :

Microelectronic Engineering

ISSN: 0167-9317

Year: 2026

Volume: 302

2 . 6 0 0

JCR@2023

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SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

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Chinese Cited Count:

30 Days PV: 2

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