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author:

You, Shaolong (You, Shaolong.) [1] | Zhao, Runyu (Zhao, Runyu.) [2] | Nie, Tianxiao (Nie, Tianxiao.) [3] | Cheng, Shuying (Cheng, Shuying.) [4] | Lai, Yunfeng (Lai, Yunfeng.) [5] | Chen, Yonghai (Chen, Yonghai.) [6] | Yu, Jinling (Yu, Jinling.) [7] | Diao, Zhu (Diao, Zhu.) [8]

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EI

Abstract:

Two-dimensional van der Waals ferromagnetic materials hold broad prospects in spintronics due to their unique physical properties. Interface engineering is an effective method to tune the magnetic properties of van der Waals magnets and their heterostructures. In this study, the circular photogalvanic effect (CPGE) in Fe3GeTe2 (1, 2, 4, 6 nm)/Bi2Te3 (8 nm) heterostructures was systematically investigated to reveal the relationship between the interface coupling and the high-temperature ferromagnetism. While both the top Fe3GeTe2/Bi2Te3 interface and the Bi2Te3 bottom surface may contribute to the observed CPGE current, the former was confirmed to be the dominant driver for a Fe3GeTe2 thickness larger than 2 nm. A significant spin–orbit coupling effect was found to be present at the Fe3GeTe2/Bi2Te3 interface and it plays a substantial role in defining the CPGE current. By combining magnetotransport and CPGE measurements, we identified interfacial exchange coupling as the key mechanism for the enhanced Curie temperature (TC) in FGT/BT heterostructures relative to pure FGT of equivalent thickness. This work highlights the importance of interfacial interactions in tuning physical properties of van der Waals magnet/topological insulator heterostructures, with CPGE serving as a sensitive probe of these effects, and paves the way for utilizing such interactions in magnetic and topological state control. © 2025 Elsevier B.V.

Keyword:

Bismuth compounds Ferromagnetism Germanium compounds Heterojunctions Magnetite Physical properties Superconducting materials Tellurium compounds Topology Van der Waals forces

Community:

  • [ 1 ] [You, Shaolong]Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fujian, Fuzhou; 350108, China
  • [ 2 ] [Zhao, Runyu]Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing; 100191, China
  • [ 3 ] [Nie, Tianxiao]Fert Beijing Institute, MIIT Key Laboratory of Spintronics, School of Integrated Circuit Science and Engineering, Beihang University, Beijing; 100191, China
  • [ 4 ] [Cheng, Shuying]Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fujian, Fuzhou; 350108, China
  • [ 5 ] [Cheng, Shuying]Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering, Changzhou University, Jiangsu, Changzhou; 213164, China
  • [ 6 ] [Lai, Yunfeng]Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fujian, Fuzhou; 350108, China
  • [ 7 ] [Chen, Yonghai]Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing; 100083, China
  • [ 8 ] [Chen, Yonghai]College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing; 100049, China
  • [ 9 ] [Yu, Jinling]Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fujian, Fuzhou; 350108, China
  • [ 10 ] [Diao, Zhu]Maynooth International Engineering College (MIEC) and Department of Electronic Engineering, Maynooth University, Co. Kildare, Maynooth; W23 F2H6, Ireland

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Source :

Applied Surface Science

ISSN: 0169-4332

Year: 2026

Volume: 717

6 . 3 0 0

JCR@2023

Cited Count:

WoS CC Cited Count:

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ESI Highly Cited Papers on the List: 0 Unfold All

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Chinese Cited Count:

30 Days PV: 0

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