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学者姓名：朱敏敏
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Abstract ：
氧化镓(Ga2O3)作为一种新型的超宽禁带半导体材料,具有高达4.8 eV的禁带宽度和8 MV/cm的临界击穿场强,这一特点很好地匹配了功率器件的性能要求.但是由于氧化镓的p型掺杂技术的缺失,氧化镓同质结器件的实现较为困难.基于此,本文提出采用p-NiO/n-Ga2O3异质结所构成的结势垒肖特基二极管(Junction Barrier Schottky,JBS),并与场板(Field Plate,FP)及阶梯型终端(Mase)进行复合,以提升其性能.为了对器件设计及制备提供理论指导,应用TCAD仿真软件对其进行了仿真研究.研究发现,与基础肖特基二极管(Schottky Barrier Diode,SBD)相比,采用复合终端的SBD的击穿电压由887 V增加至3 069 V,同时正向导通电阻由3.975 mΩ·cm2略微增加至5.395 mΩ·cm2.此外,本文探讨了 p-NiO掺杂浓度和厚度对器件性能的影响.结果证明,复合终端结构有效改善了器件的反向击穿性能,并且为器件性能的优化提供了理论指导.
Keyword ：
Ga2O3-SBD Ga2O3-SBD 击穿电压 击穿电压 复合终端结构 复合终端结构 异质结 异质结
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| GB/T 7714 | 马豪威 , 朱敏敏 . 复合终端下n-Ga2O3异质肖特基二极管的结构设计及优化 [J]. | 功能材料与器件学报 , 2025 , 31 (1) : 56-63 . |
| MLA | 马豪威 等. "复合终端下n-Ga2O3异质肖特基二极管的结构设计及优化" . | 功能材料与器件学报 31 . 1 (2025) : 56-63 . |
| APA | 马豪威 , 朱敏敏 . 复合终端下n-Ga2O3异质肖特基二极管的结构设计及优化 . | 功能材料与器件学报 , 2025 , 31 (1) , 56-63 . |
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Optimized inductively coupled plasma (ICP) etching process can improve the surface quality of (1-Ga2O3 thin film to enhance the power figure of merit of (1-Ga2O3 Schottky barrier diodes (SBDs). However, the mechanism of surface quality improvement of ICP etching is not yet clear. In this letter, we verified that the surface qualities of (1-Ga2O3 SBDs could be modified by varying the ratios of BCl3 and Ar etching plasmas. Moreover, electrical performance tests were conducted to verify that the improved surface quality can enhance the electrical properties. Benefitted from the high surface quality of (1-Ga2O3 epitaxial layer, the (1-Ga2O3 SBD without termination structure exhibits a low specific on-resistance (Ron,sp) of 4 m Omega & sdot;cm2 and high breakdown voltage (BV) of 1500 V. These results can pave the way for the preparation of high-performance (1-Ga2O3 power SBDs.
Keyword ：
Beta-phase gallium oxide Beta-phase gallium oxide Inductively coupled plasma etching Inductively coupled plasma etching Schottky barrier diode Schottky barrier diode Surface quality Surface quality
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| GB/T 7714 | Deng, Yicong , Chen, Desen , Li, Titao et al. Surface quality improvement mechanism of ICP etching for Ga2O3 Schottky barrier diode [J]. | MICRO AND NANOSTRUCTURES , 2025 , 199 . |
| MLA | Deng, Yicong et al. "Surface quality improvement mechanism of ICP etching for Ga2O3 Schottky barrier diode" . | MICRO AND NANOSTRUCTURES 199 (2025) . |
| APA | Deng, Yicong , Chen, Desen , Li, Titao , Zhu, Minmin , Xu, Xiaorui , Zhang, Haizhong et al. Surface quality improvement mechanism of ICP etching for Ga2O3 Schottky barrier diode . | MICRO AND NANOSTRUCTURES , 2025 , 199 . |
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Solar-blind ultraviolet photodetectors (SBUV-PDs) are utilized in various military and civilian fields, encompassing missile tracking, high-voltage detection, and fire warning systems. Ga2O3 emerges as the prime candidate for such PDs owing to its elevated bandgap, remarkable thermal stability, and facile fabrication process. The metal-semiconductor-metal (MSM) structure garners attention for its swift response time and straightforward preparation, thus becoming a focal point among diverse PD architectures. Nevertheless, the metal surface impedes optical absorption, thereby diminishing the quantum efficiency of the PD. In this work, we introduce a nanograting onto the Ga2O3 surface, which results in a 747-fold increase in responsivity in the SBUV region compared to a normal MSM grating-free structure. Metal gratings can induce surface plasmon polaritons (SPP), thereby augmenting the optical absorption of the PD and stimulating hot electrons to increase photocurrent. However, the broadband response caused by the introduction of metal gratings is a common problem. By optimizing the doping concentration of the Ga2O3 absorption layer, adjusting the incident light intensity, and reverse voltage, the problem of broadband response has been solved. The responsivity of the device in the non-SBUV region is suppressed 24-fold. This methodology holds promise as a reliable approach for fabricating high-performance SBUV-PDs.
Keyword ：
Ga2O3 Ga2O3 metal-semiconductor-metal (MSM) metal-semiconductor-metal (MSM) nanograting nanograting photodetector (PD) photodetector (PD) plasmon plasmon responsivity responsivity
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| GB/T 7714 | Li, Jialong , Yang, Dan , Lu, Xiaoqiang et al. Enhancing Ga2O3 Solar-Blind Photodetectors via Metal Nanogratings [J]. | IEEE SENSORS JOURNAL , 2025 , 25 (1) : 434-442 . |
| MLA | Li, Jialong et al. "Enhancing Ga2O3 Solar-Blind Photodetectors via Metal Nanogratings" . | IEEE SENSORS JOURNAL 25 . 1 (2025) : 434-442 . |
| APA | Li, Jialong , Yang, Dan , Lu, Xiaoqiang , Zhang, Haizhong , Zhu, Minmin . Enhancing Ga2O3 Solar-Blind Photodetectors via Metal Nanogratings . | IEEE SENSORS JOURNAL , 2025 , 25 (1) , 434-442 . |
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Three-dimensional (3D) thermally conductive boron nitride (BN)/polymer composites show significant potential in the field of thermal management. This review surveys current advances and discusses the thermal conductivity mechanisms of BN/polymer composites and the critical factors influencing their performance. A thorough introduction to the construction methods of 3D thermally conductive BN/polymer composites is provided, along with an objective discussion of their advantages and disadvantages. Notably, this review specifically highlights the effects of 3D thermally conductive networks on phonon transmission, interfacial thermal resistance, and thermal conductivity, as well as their interactions, and points out recent innovative trends in constructing 3D thermal composites by integrating BN with other dimensional fillers (0D, 1D, and 2D fillers). These approaches demonstrate promising strategies for optimizing thermal management by leveraging the unique advantages of each dimensional filler. The review concludes with a summary and outlook on the development of 3D thermally conductive BN/polymer composites. This aims to provide theoretical analysis, advance practical applications, and enhance next-generation thermal management systems.
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| GB/T 7714 | Liu, Guang , Xu, Pingfan , Luo, Zhongzhen et al. Dimensional synergy in 3D thermally conductive boron nitride/polymer composites [J]. | APPLIED PHYSICS REVIEWS , 2025 , 12 (2) . |
| MLA | Liu, Guang et al. "Dimensional synergy in 3D thermally conductive boron nitride/polymer composites" . | APPLIED PHYSICS REVIEWS 12 . 2 (2025) . |
| APA | Liu, Guang , Xu, Pingfan , Luo, Zhongzhen , Zhang, Li , Luo, Yaofa , Zhang, Peikun et al. Dimensional synergy in 3D thermally conductive boron nitride/polymer composites . | APPLIED PHYSICS REVIEWS , 2025 , 12 (2) . |
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Aluminum alloys are renowned for their lightweight nature, resistance to oxidation, and impressive mechanical properties. Despite these advantages, their mechanical performance deteriorates significantly in extreme environments. Herein, we present an innovative solution by developing aluminum matrix composites (AMCs) that incorporate 3D printed alumina ceramic lattices. Our investigation demonstrates a remarkable 112.4 % increase in the strength of AMCs compared to pure aluminum, with a concurrent 54.8 % improvement in modulus under identical conditions. Additionally, as the volume fraction of the ceramic lattice varies from 0.21 to 0.45, the modulus of AMCs exhibits a noteworthy increase, ranging from 96.2 to 106.5 GPa, surpassing that of pure aluminum (68.8 GPa). Notably, even at temperatures of up to 300 degrees C, the strength of the Al2O3-Al composite matrix remains stable at 477.3 MPa. X-ray computed tomography analysis elucidates that the structural integrity of these composites predominantly relies on the load-bearing capacity of the ceramic lattices, complemented by the damping effect provided by the aluminum matrix. This innovative approach not only paves the way for scalable production of high-strength metal alloys in the industrial sector but also holds promise for substantial economic opportunities in the near future.
Keyword ：
Alumina lattice Alumina lattice Aluminum matrix composites Aluminum matrix composites Stereolithography 3D printing Stereolithography 3D printing Strength Strength X-ray computed tomography X-ray computed tomography
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| GB/T 7714 | Zhu, Minmin , Deng, Caozhuang , Zhang, Zhanfeng et al. Stereolithography 3D printing ceramics for ultrahigh strength aluminum matrix composites [J]. | JOURNAL OF MANUFACTURING PROCESSES , 2025 , 139 : 126-132 . |
| MLA | Zhu, Minmin et al. "Stereolithography 3D printing ceramics for ultrahigh strength aluminum matrix composites" . | JOURNAL OF MANUFACTURING PROCESSES 139 (2025) : 126-132 . |
| APA | Zhu, Minmin , Deng, Caozhuang , Zhang, Zhanfeng , Yang, Dan , Zhang, Haizhong , Wang, Linghua et al. Stereolithography 3D printing ceramics for ultrahigh strength aluminum matrix composites . | JOURNAL OF MANUFACTURING PROCESSES , 2025 , 139 , 126-132 . |
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Abstract ：
氧化镓（Ga
Keyword ：
Ga Ga
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| GB/T 7714 | 马豪威 , 朱敏敏 . 复合终端下n-Ga [J]. | 功能材料与器件学报 , 2025 , 31 (01) : 56-63 . |
| MLA | 马豪威 et al. "复合终端下n-Ga" . | 功能材料与器件学报 31 . 01 (2025) : 56-63 . |
| APA | 马豪威 , 朱敏敏 . 复合终端下n-Ga . | 功能材料与器件学报 , 2025 , 31 (01) , 56-63 . |
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Ultra-wide bandgap semiconductors are frequently utilized materials in the fabrication of deep ultraviolet photodetectors (DUVPDs). However, it is imperative to enhance both the photoresponsivity and response speed of these detectors. Herein, we deposited high-quality (111)-oriented ZnGa 2 O 4 films with a bandgap of approximately 4.75 eV onto c -plane sapphire (0001) substrates using magnetron sputtering. Our findings illuminate the pivotal role of pressure in shaping their structural properties, chemical compositions, and photoelectric characteristics. Importantly, DUVPDs based on ZnGa 2 O 4 films exhibited a photo/dark current ratio of 1.46 x 10 4 . Furthermore, we observed the highest responsivity to be 72.2 A/W, complemented by a photodetectivity of 4.21 x 10 14 Jones, an external quantum efficiency of 4.04 x 10 4 %, and rise and decay times of 2.32 s and 0.055 s, respectively. This study underscores the commendable photoresponsivity and rapid response time of the ZnGa 2 O 4 photodetector, positioning it as a compelling candidate for the advancement of deep ultraviolet devices.
Keyword ：
Deep ultraviolet photodetector Deep ultraviolet photodetector MSM structure MSM structure Photodetectivity Photodetectivity Response speed Response speed
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| GB/T 7714 | Xin, Yangmei , Zhang, Wenfei , Gao, Zhen et al. Preparation of ZnGa 2 O 4-based deep ultraviolet photodetector with high photodetectivity by magnetron sputtering [J]. | VACUUM , 2024 , 224 . |
| MLA | Xin, Yangmei et al. "Preparation of ZnGa 2 O 4-based deep ultraviolet photodetector with high photodetectivity by magnetron sputtering" . | VACUUM 224 (2024) . |
| APA | Xin, Yangmei , Zhang, Wenfei , Gao, Zhen , Xiu, Junshan , Yu, Dan , Li, Zhao et al. Preparation of ZnGa 2 O 4-based deep ultraviolet photodetector with high photodetectivity by magnetron sputtering . | VACUUM , 2024 , 224 . |
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The next-generation computing system is required to perform 10(18) floating point operations per second to address the exponential growth of data from sensory terminals, driven by advancements in artificial intelligence and the Internet of Things. Even if a supercomputer possesses the capability to execute these operations, managing heat dissipation becomes a significant challenge when the electronic synapse array reaches a comparable scale with the human neuron network. One potential solution to address thermal hotspots in electronic devices is the use of vertically-aligned hexagonal boron nitride (h-BN) known for its high thermal conductivity. In this study, we have developed textured h-BN films using the high power impulse magnetron sputtering technique. The thermal conductivity of the oriented h-BN film is approximately 354% higher than that of the randomly oriented counterpart. By fabricating electronic synapses based on the textured h-BN thin film, we demonstrate various bio-synaptic plasticity in this device. Our results indicate that orientation engineering can effectively enable h-BN to function as a suitable self-heat dissipation layer, thereby paving the way for future wearable memory devices, solar cells, and neuromorphic devices.
Keyword ：
boron nitride boron nitride high thermal conductivity high thermal conductivity low-power memory low-power memory neuromorphic computing neuromorphic computing vertically-aligned vertically-aligned
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| GB/T 7714 | Zhang, Haizhong , Ju, Xin , Jiang, Haitao et al. Implementation of high thermal conductivity and synaptic metaplasticity in vertically-aligned hexagonal boron nitride-based memristor [J]. | SCIENCE CHINA-MATERIALS , 2024 , 67 (6) : 1907-1914 . |
| MLA | Zhang, Haizhong et al. "Implementation of high thermal conductivity and synaptic metaplasticity in vertically-aligned hexagonal boron nitride-based memristor" . | SCIENCE CHINA-MATERIALS 67 . 6 (2024) : 1907-1914 . |
| APA | Zhang, Haizhong , Ju, Xin , Jiang, Haitao , Yang, Dan , Wei, Rongshan , Hu, Wei et al. Implementation of high thermal conductivity and synaptic metaplasticity in vertically-aligned hexagonal boron nitride-based memristor . | SCIENCE CHINA-MATERIALS , 2024 , 67 (6) , 1907-1914 . |
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In this work, t he i nfluence o f d ifferent s urface treatments on the breakdown voltage (BV) and the specific on-state resistance (R-on,R-sp) of the beta-phase gallium oxide (beta-Ga2O3) Schottky barrier diodes (SBD) is investigated. The results show that after fast inductively coupled plasma (ICP) etching, slow ICP etching and piranha treatment, the unreliable surface of beta-Ga2O3 can be effectively removed with small surface roughness and little co-products, thus increasing BV from 141 V to 724 V and reducing R-on,R- sp from 5.1 m Omega center dot cm(2) to 1.2 m Omega center dot cm(2). Consequently, the results validate the effectiveness of the surface treatments and can provide guidance for device process optimization.
Keyword ：
Beta-phase gallium oxide Beta-phase gallium oxide Inductively coupled plasma etching Inductively coupled plasma etching Schottky barrier diode Schottky barrier diode Surface quality Surface quality
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| GB/T 7714 | Xu, Xiaorui , Deng, Yicong , Ye, Shurui et al. Demonstration of Surface Treatment for β-Ga2O3 Schottky Barrier Diode with High Breakdown Voltage and Low Specific On-Resistance [J]. | 2024 36TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC S, ISPSD 2024 , 2024 : 240-243 . |
| MLA | Xu, Xiaorui et al. "Demonstration of Surface Treatment for β-Ga2O3 Schottky Barrier Diode with High Breakdown Voltage and Low Specific On-Resistance" . | 2024 36TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC S, ISPSD 2024 (2024) : 240-243 . |
| APA | Xu, Xiaorui , Deng, Yicong , Ye, Shurui , Chen, Desen , Li, Titao , Zhu, Minmin et al. Demonstration of Surface Treatment for β-Ga2O3 Schottky Barrier Diode with High Breakdown Voltage and Low Specific On-Resistance . | 2024 36TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC S, ISPSD 2024 , 2024 , 240-243 . |
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Sensors, functioning as primary conveyors of perceptual data, stand ready to illuminate the landscape of the intelligent era. Barium titanate, an exceedingly pivotal class of ferroelectric materials for sensor applications, has attracted considerable attention from both commercial and industrial sectors in recent years. Against this backdrop, this paper embarks on a comprehensive examination of sensors founded upon barium titanate across a spectrum of applications. Our investigation commences with a historical analysis of ferroelectric materials, with a specific emphasis on the developmental trajectory of barium titanate. Subsequently, an in-depth exposition elucidates the attributes and manufacturing processes linked to barium titanate materials, providing readers with insight into the structural and manufacturing aspects of these materials. Ultimately, we introduce a diverse array of sensors tailored to distinct functions within a myriad of domains. With the progression of science and technology, sensors have evolved into indispensable components within the domain of artificial intelligence. This paper primarily undertakes a thorough examination of sensors utilizing barium titanate across a spectrum of applications. To commence, the properties and preparation of barium titanate are delineated, succeeded by an exploration of diverse sensor applications and the prospective developments. image
Keyword ：
barium titanate barium titanate ferroelectric ferroelectric piezoelectric piezoelectric pyroelectric pyroelectric sensor sensor
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| GB/T 7714 | Deng, Caozhuang , Zhang, Yi , Yang, Dan et al. Recent Progress on Barium Titanate-Based Ferroelectrics for Sensor Applications [J]. | ADVANCED SENSOR RESEARCH , 2024 , 3 (6) . |
| MLA | Deng, Caozhuang et al. "Recent Progress on Barium Titanate-Based Ferroelectrics for Sensor Applications" . | ADVANCED SENSOR RESEARCH 3 . 6 (2024) . |
| APA | Deng, Caozhuang , Zhang, Yi , Yang, Dan , Zhang, Haizhong , Zhu, Minmin . Recent Progress on Barium Titanate-Based Ferroelectrics for Sensor Applications . | ADVANCED SENSOR RESEARCH , 2024 , 3 (6) . |
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