Query：
学者姓名：陈之荣
Refining：
Year
Type
Indexed by
Source
Complex
Co-
Language
Clean All
Abstract ：
The study about the supramolecular interactions in the organic-inorganic hybrids will be significant for the design of new photo/electrical functional materials. In this work, 1,omega-bis(isoquinoline)alkane cations with different spacer lengths (n = 3, 5, 6) have been incorporated with iodobismuthates to construct three new hybrids, which have been formula as [BIQPP]2[Bi4I16] (1), [BIQPT]2[Bi4I16] (2) and [BIQHX]2[Bi4I16] (3) through X-ray single crystal diffraction method (BIQPP2+ = 1,3-bis(isoquinoline)propane, BIQPT2+ = 1,5-bis(isoquinoline) pentane, BIQHX2+ = 1,6-bis(isoquinoline)hexane). The centrosymmetric [Bi4I16]4- anions are constructed from four edge-sharing BiI6 octahedra. Interestingly, with the elongation of spacer length on isoquinoline from 3, 5 to 6, the iodobismuthate anions exhibit 0-D [Bi4I16]4- tetramers (n = 3, 6 for 1 and 3) and pseudo 3-D [Bi4I16]n4n- network (n = 5, for 2) based on II interactions. Supramolecular interactions including pi-pi stacking interactions and C-HI hydrogen bonds contribute to their structural extensions. Consequently, the enhanced red emission intensity and the lower thermochromic temperature can be observed in 2. The clarification on the spacer effect on the supramolecular interactions and functional properties of this work will be beneficial for the design of new functional materials.Graphical Abstract Different iodobismuthate anions and photo-physical properties including red emission intensity and thermochromism can be achieved by elongating the spacer lengths in 1,omega-Bis(isoquinoline)alkane cations
Keyword ：
Bis(isoquinoline)alkane Bis(isoquinoline)alkane Iodobismuthates Iodobismuthates Organic-inorganic hybrid Organic-inorganic hybrid Photo-physical properties Photo-physical properties Supra-molecular structure Supra-molecular structure
Cite：
Copy from the list or Export to your reference management。
| GB/T 7714 | Wang, Peng , Sheng, Wen-Wen , Xu, Ying-Sheng et al. The Supramolecular Structures and Photo-Physical Properties Modulated by Spacer Lengths in 1,ω-Bis(isoquinoline)Alkane/(Bi4I16)4- Hybrids [J]. | JOURNAL OF CHEMICAL CRYSTALLOGRAPHY , 2024 , 55 (1) : 47-55 . |
| MLA | Wang, Peng et al. "The Supramolecular Structures and Photo-Physical Properties Modulated by Spacer Lengths in 1,ω-Bis(isoquinoline)Alkane/(Bi4I16)4- Hybrids" . | JOURNAL OF CHEMICAL CRYSTALLOGRAPHY 55 . 1 (2024) : 47-55 . |
| APA | Wang, Peng , Sheng, Wen-Wen , Xu, Ying-Sheng , Chen, Zhi-Rong . The Supramolecular Structures and Photo-Physical Properties Modulated by Spacer Lengths in 1,ω-Bis(isoquinoline)Alkane/(Bi4I16)4- Hybrids . | JOURNAL OF CHEMICAL CRYSTALLOGRAPHY , 2024 , 55 (1) , 47-55 . |
| Export to | NoteExpress RIS BibTex |
Version ：
Abstract ：
The coming big-data era has created a huge demand for next-generation memory technologies with characters of higher data-storage densities, faster access speeds, lower power consumption and better environmental compatibility. In this field, the design of resistive switching active materials is pivotal but challengeable. Polyoxometalates (POMs) are promising candidates for next-generation molecular memristors due to their versatile redox characters, excellent electron reservoirs and good compatibility/convenience in microelectronics processing. In this review, five kinds of POM-based active materials in nonvolatile memories (inorganic POMs, crystalline organic-inorganic hybrid POMOFs, polymer modified POMs, POM/transition metal oxides composites and the deposition of POM on metal surfaces) were described. The components of POMs active materials, device fabrications, device parameters, and resistive switching mechanisms relative to their structures were summarized. Finally, challenges and future perspectives of POMs-based memristors were also presented.
Keyword ：
memristors memristors polyoxometalate polyoxometalate polyoxometalate-based composite polyoxometalate-based composite resistive random access memory resistive random access memory resistive switching mechanism resistive switching mechanism
Cite：
Copy from the list or Export to your reference management。
| GB/T 7714 | Yang, Hailong , Yue, Guoli , Li, Tao et al. The Old Polyoxometalates in New Application as Molecular Resistive Switching Memristors [J]. | EUROPEAN JOURNAL OF INORGANIC CHEMISTRY , 2023 , 26 (32) . |
| MLA | Yang, Hailong et al. "The Old Polyoxometalates in New Application as Molecular Resistive Switching Memristors" . | EUROPEAN JOURNAL OF INORGANIC CHEMISTRY 26 . 32 (2023) . |
| APA | Yang, Hailong , Yue, Guoli , Li, Tao , Du, Lingling , Li, Haohong , Chen, Zhirong et al. The Old Polyoxometalates in New Application as Molecular Resistive Switching Memristors . | EUROPEAN JOURNAL OF INORGANIC CHEMISTRY , 2023 , 26 (32) . |
| Export to | NoteExpress RIS BibTex |
Version ：
Abstract ：
The exploration of novel photo/thermal-responsive nonvolatile memorizers will be beneficial for energy-saving memories.Herein,new<110>-oriented perovskites using single template melamine,i.e.,[(MLAI-H2)(PbX4)]n(X=Br(α-1),Cl(α-2),MLAI=melamine)have been prepared and their structures upon irra-diation of visible light have been investigated.They have been fabricated as nonvolatile memory devices with structures of ITO/[(MLAI-H2)(PbX4)]n/PMMA/Ag(device-1:X=Br,device-2:X=Cl),which can ex-hibit unique visible light-triggered binary nonvolatile memory performances.Interestingly,the silent or working status can be monitored by visible chromisms.Furthermore,the light-triggered binary resistive switching mechanisms of these ITO/[(MLAI-H2)(PbX4)]n/PMMA/Ag memory devices have been clarified in terms of EPR,fluorescence,and single-crystal structural analysis.The presence of light-activated traps in<110>-oriented[(MLAI-H2)(PbX4)]n perovskites are dominated in the appearance of light-triggered resis-tive switching behaviors,based on which the inverted internal electrical fields can be established.Ac-cording to the structural analysis,the more distorted PbX6 octahedra,higher corrugated<110>-oriented perovskite sheets,and more condensed organic-inorganic packing in Br-containing perovskite are bene-ficial for the stabilization of light-activated traps,which lead to the better resistive switching behavior of device-1.This work can pave a new avenue for the establishment of novel energy-saving nonvolatile memorizers used in aerospace or military industries.
Cite：
Copy from the list or Export to your reference management。
| GB/T 7714 | Kaiyue Song , Panke Zhou , Lulu Zong et al. The visible light-triggered nonvolatile memory performances in melamine-decorated<110>-oriented lead halide perovskites:A photo-responsive structural evolution insight [J]. | 中国化学快报（英文版） , 2023 , 34 (3) : 526-530 . |
| MLA | Kaiyue Song et al. "The visible light-triggered nonvolatile memory performances in melamine-decorated<110>-oriented lead halide perovskites:A photo-responsive structural evolution insight" . | 中国化学快报（英文版） 34 . 3 (2023) : 526-530 . |
| APA | Kaiyue Song , Panke Zhou , Lulu Zong , Zhencong Yang , Haohong Li , Zhirong Chen . The visible light-triggered nonvolatile memory performances in melamine-decorated<110>-oriented lead halide perovskites:A photo-responsive structural evolution insight . | 中国化学快报（英文版） , 2023 , 34 (3) , 526-530 . |
| Export to | NoteExpress RIS BibTex |
Version ：
Abstract ：
Polysulfide-based multilevel memorizers are promising as novel memorizers, in which the occurrence of S-n(2-) relaxation is key for their multilevel memory. However, the effects of crystal packing and the side group of organic ligands on S-n(2-) relaxation are still ambiguous. In this work, ionic [Zn(S-6)(2)Zn-2(Bipy)(2)SO4 (1), Zn(S-6)(2)Zn(Pmbipy)(3) (2)] and neutral [ZnS6(Ombipy) (3), ZnS6(Phen)(2) (4)] Zn/polysulfide/organic complexes with different packing modes and structures of organic ligands have been synthesized and were fabricated as memory devices. In both ionic and neutral Zn complexes, the S-6(2-) relaxation will be blocked by steric hindrances due to the packing of counter-cations and hydrogen-bond restrictions. Consequently, only the binary memory performances can be seen in FTO/1/Ag, FTO/2/Ag, and FTO/4/Ag, which originate from the more condensed packing of conjugated ligands upon electrical stimulus. Interestingly, FTO/3/Ag illustrates the unique thermally triggered reversible binary-ternary switchable memory performance. In detail, after introducing a methyl group on the 6 '-position of bipyridine in ZnS6(Ombipy) (3), the ring-to-chain relaxation of S-6(2-) anions at room temperature will be inhibited, but it can happen at a higher temperature of 120 degrees C, which has been verified by elongated S-S lengths and the strengthened C-HS hydrogen bond upon heating. The rules drawn in this work will provide a useful guide for the design of stimulus-responsive memorizers that can be applied in special industries such as automobile, oil, and gas industries.
Cite：
Copy from the list or Export to your reference management。
| GB/T 7714 | Lin, Xiaoli , Zhou, Panke , Gao, Yiqun et al. Implementation of Thermal-Triggered Binary-Ternary Switchable Memory Performance in Zn/polysulfide/organic Complex-Based Memorizers by Finely Modulating the S6 2- Relaxation [J]. | INORGANIC CHEMISTRY , 2023 , 63 (1) : 775-783 . |
| MLA | Lin, Xiaoli et al. "Implementation of Thermal-Triggered Binary-Ternary Switchable Memory Performance in Zn/polysulfide/organic Complex-Based Memorizers by Finely Modulating the S6 2- Relaxation" . | INORGANIC CHEMISTRY 63 . 1 (2023) : 775-783 . |
| APA | Lin, Xiaoli , Zhou, Panke , Gao, Yiqun , Li, Tao , Chen, Xiong , Li, Haohong et al. Implementation of Thermal-Triggered Binary-Ternary Switchable Memory Performance in Zn/polysulfide/organic Complex-Based Memorizers by Finely Modulating the S6 2- Relaxation . | INORGANIC CHEMISTRY , 2023 , 63 (1) , 775-783 . |
| Export to | NoteExpress RIS BibTex |
Version ：
Abstract ：
The study about simultaneously enhancing the resistive switching level and ambient-air-stability of perovskite-based memorizers will promote its commercialization. Here, a new 3D perovskite (TAZ-H) PbBr3 (TAZ-H+ = protonated thiazole) has been fabricated as FTO/(TAZ-H)PbBr3/Ag device, which only exhibits binary memory performance with the high tolerant temperature of 170 degrees C. After encapsulating by polyvinylpyrrolidone (PVP), the (TAZ-H)PbBr3@PVP composite-based device can demonstrate ternary resistive switching behavior with considerable ON2/ON1/OFF ratio (105.9: 103.9:1) and high ternary yield (68 %). Specially, this device presents good ambient-air stability at RH 80 % and thermal tolerance of 100 degrees C. The binary resistive switching mechanism can be ascribed to the halogen ion migration induced by bromine defects in the (PbBr3)nn- framework. But the ternary resistive switching phenomenon in the (TAZ-H)PbBr3@PVP-based device could be depicted as the carrier transport from filled traps of PVP to (PbBr3)nn- framework (ON1 state) and then carriers flowing in the re-arranged (TAZ-H)nn+ chain in 3D chan-nels (ON2 state). The PVP treatment can not only modify the grain boundary defects, but also facilitate the transport of injected carriers to the perovskite films via Pb-O coordinated bonds and inhibition of order-disorder transformation. This facial strategy for implementing ternary perovskite-based memoriz-ers with good ambient-air-stability is quite meaningful for high-density memory in harsh environments.(c) 2023 Elsevier Inc. All rights reserved.
Keyword ：
3D perovskite 3D perovskite Ambient-air-stability of memorizer Ambient-air-stability of memorizer Polyvinylpyrrolidone Polyvinylpyrrolidone Ternary memorizers Ternary memorizers Thermal tolerance of memorizer Thermal tolerance of memorizer
Cite：
Copy from the list or Export to your reference management。
| GB/T 7714 | Song, Kaiyue , Du, Lingling , Yue, Guoli et al. Simultaneously elevating the resistive switching level and ambient-air- stability of 3D perovskite (TAZ-H)PbBr3-based memory device by encapsulating into polyvinylpyrrolidone [J]. | JOURNAL OF COLLOID AND INTERFACE SCIENCE , 2023 , 642 : 408-420 . |
| MLA | Song, Kaiyue et al. "Simultaneously elevating the resistive switching level and ambient-air- stability of 3D perovskite (TAZ-H)PbBr3-based memory device by encapsulating into polyvinylpyrrolidone" . | JOURNAL OF COLLOID AND INTERFACE SCIENCE 642 (2023) : 408-420 . |
| APA | Song, Kaiyue , Du, Lingling , Yue, Guoli , Li, Tao , Li, Haohong , Zheng, Shoutian et al. Simultaneously elevating the resistive switching level and ambient-air- stability of 3D perovskite (TAZ-H)PbBr3-based memory device by encapsulating into polyvinylpyrrolidone . | JOURNAL OF COLLOID AND INTERFACE SCIENCE , 2023 , 642 , 408-420 . |
| Export to | NoteExpress RIS BibTex |
Version ：
Abstract ：
The exploration of novel photo/thermal-responsive nonvolatile memorizers will be beneficial for energysaving memories. Herein, new < 110 > -oriented perovskites using single template melamine, i.e. , [(MLAIH 2 )(Pb X 4 )] n ( X = Br ( alpha- 1 ), Cl ( alpha- 2 ), MLAI = melamine) have been prepared and their structures upon irradiation of visible light have been investigated. They have been fabricated as nonvolatile memory devices with structures of ITO/[(MLAI-H 2 )(Pb X 4 )] n /PMMA/Ag (device- 1 : X = Br, device- 2 : X = Cl), which can exhibit unique visible light-triggered binary nonvolatile memory performances. Interestingly, the silent or working status can be monitored by visible chromisms. Furthermore, the light-triggered binary resistive switching mechanisms of these ITO/[(MLAI-H 2 )(Pb X 4 )] n /PMMA/Ag memory devices have been clarified in terms of EPR, fluorescence, and single-crystal structural analysis. The presence of light-activated traps in < 110 > -oriented [(MLAI-H 2 )(Pb X 4 )] n perovskites are dominated in the appearance of light-triggered resistive switching behaviors, based on which the inverted internal electrical fields can be established. According to the structural analysis, the more distorted Pb X 6 octahedra, higher corrugated < 110 > -oriented perovskite sheets, and more condensed organic-inorganic packing in Br-containing perovskite are beneficial for the stabilization of light-activated traps, which lead to the better resistive switching behavior of device- 1 . This work can pave a new avenue for the establishment of novel energy-saving nonvolatile memorizers used in aerospace or military industries.(c) 2023 Published by Elsevier B.V. on behalf of Chinese Chemical Society and Institute of Materia Medica, Chinese Academy of Medical Sciences.
Keyword ：
110-Oriented lead halide perovskite 110-Oriented lead halide perovskite Light-triggered memory Light-triggered memory Nonvolatile memorizer Nonvolatile memorizer Photochromisms Photochromisms Photo-responsive structural evolution Photo-responsive structural evolution
Cite：
Copy from the list or Export to your reference management。
| GB/T 7714 | Song, Kaiyue , Zhou, Panke , Zong, Lulu et al. The visible light-triggered nonvolatile memory performances in melamine-decorated 110-oriented lead halide perovskites: A photo-responsive structural evolution insight [J]. | CHINESE CHEMICAL LETTERS , 2023 , 34 (3) . |
| MLA | Song, Kaiyue et al. "The visible light-triggered nonvolatile memory performances in melamine-decorated 110-oriented lead halide perovskites: A photo-responsive structural evolution insight" . | CHINESE CHEMICAL LETTERS 34 . 3 (2023) . |
| APA | Song, Kaiyue , Zhou, Panke , Zong, Lulu , Yang, Zhencong , Li, Haohong , Chen, Zhirong . The visible light-triggered nonvolatile memory performances in melamine-decorated 110-oriented lead halide perovskites: A photo-responsive structural evolution insight . | CHINESE CHEMICAL LETTERS , 2023 , 34 (3) . |
| Export to | NoteExpress RIS BibTex |
Version ：
Abstract ：
The low ternary yield and expensive organic active materials hinder the potential industrialization of organic multi-level resistive memories. Here, facile melamine (M)-cyanuric acid (C) hydrogen-bonded organic frame-work (M -C HOF) was firstly fabricated as a new type of ternary memorizer. In the M -C HOF, the robust graphite-like planar 2D sheet along ab-plane containing a rosette motif is constructed from nine hydrogen bonds among M and C, and the 2D sheets are stacked into a 3D network through strong pi-pi stacking interactions. The FTO/M-C/Ag device exhibits a typical ternary memory performance with considerable OFF/ON1/ON2 current ratio of 1:103.1:104.6, relatively low set voltages (1.14 and 1.70 V), good reliability, and high ternary device yield of 74 %. The ternary resistive switching behavior could be ascribed to the filled traps in 2D layer (for ON1 state) and the carriers flowing in 3D network (for ON2 state), which have been verified by quenched fluorescence of isolated M and C, increased (201) lattice plane distance upon external voltages. Besides, this ternary memorizer has superior thermal stability (300 degrees C) and irradiative tolerance. This attempt of HOF-based ternary memorizer presents a new choice for efficient and facial multi-level resistive material.
Keyword ：
Hydrogen-bonded organic framework Hydrogen-bonded organic framework Memorizers in harsh environment Memorizers in harsh environment Ternary resistive memorizer Ternary resistive memorizer Ternary resistive switching mechanism Ternary resistive switching mechanism
Cite：
Copy from the list or Export to your reference management。
| GB/T 7714 | Song, Kaiyue , Yang, Hailong , Chen, Binjun et al. The facile implementing ternary resistive memory in graphite-like melamine-cyanuric acid hydrogen-bonded organic framework with high ternary yield and environmental tolerance [J]. | APPLIED SURFACE SCIENCE , 2023 , 608 . |
| MLA | Song, Kaiyue et al. "The facile implementing ternary resistive memory in graphite-like melamine-cyanuric acid hydrogen-bonded organic framework with high ternary yield and environmental tolerance" . | APPLIED SURFACE SCIENCE 608 (2023) . |
| APA | Song, Kaiyue , Yang, Hailong , Chen, Binjun , Lin, Xiaoli , Liu, Yue , Liu, Yuanzheng et al. The facile implementing ternary resistive memory in graphite-like melamine-cyanuric acid hydrogen-bonded organic framework with high ternary yield and environmental tolerance . | APPLIED SURFACE SCIENCE , 2023 , 608 . |
| Export to | NoteExpress RIS BibTex |
Version ：
Abstract ：
The use of crystalline metal-organic complexes with definite structures as multilevel memories can enable explicit structure-property correlations, which is significant for designing the next generation of memories. Here, four Zn-polysulfide complexes with different degrees of conjugation have been fabricated as memory devices. ZnS6(L)(2)-based memories (L = pyridine and 3-methylpyridine) can exhibit only bipolar binary memory performances, but ZnS6(L)-based memories (L = 2,2 '-bipyridine and 1,10-phenanthroline) illustrate non-volatile ternary memory performances with high ON2/ON1/OFF ratios (10(4.22)/10(2.27)/1 and 10(4.85)/10(2.58)/1) and ternary yields (74% and 78%). Their ON1 states stem from the packing adjustments of organic ligands upon the injection of carriers, and the ON2 states are a result of the ring-to-chain relaxation of S-6(2-) anions. The lower conjugated degrees in ZnS6(L)(2) result in less compact packing; consequently, the adjacent S-6(2-) rings are too long to trigger the S-6(2-) relaxation. The deep structure-property correlation in this work provides a new strategy for implementing multilevel memory by triggering polysulfide relaxation based on the conjugated degree regulation of organic ligands.
Cite：
Copy from the list or Export to your reference management。
| GB/T 7714 | Zhou, Pan-Ke , Lin, Xiao-Li , Chee, Mun Yin et al. Switching the memory behaviour from binary to ternary by triggering S-6(2-) relaxation in polysulfide-bearing zinc-organic complex molecular memories [J]. | MATERIALS HORIZONS , 2023 , 10 (7) : 2535-2541 . |
| MLA | Zhou, Pan-Ke et al. "Switching the memory behaviour from binary to ternary by triggering S-6(2-) relaxation in polysulfide-bearing zinc-organic complex molecular memories" . | MATERIALS HORIZONS 10 . 7 (2023) : 2535-2541 . |
| APA | Zhou, Pan-Ke , Lin, Xiao-Li , Chee, Mun Yin , Lew, Wen Siang , Zeng, Tao , Li, Hao-Hong et al. Switching the memory behaviour from binary to ternary by triggering S-6(2-) relaxation in polysulfide-bearing zinc-organic complex molecular memories . | MATERIALS HORIZONS , 2023 , 10 (7) , 2535-2541 . |
| Export to | NoteExpress RIS BibTex |
Version ：
Abstract ：
The design of electrically active composites by modifying with functional groups with definite switching mechanism is the key to develop new multi-level memorizers. In this work, five binaphthol and two ferrocene derivants were embedded into polystyrene (PS) to fabricate FTO/binaphthol or ferrocene derivants@PS/Ag memory devices. Binaphthol derivants were firstly used in the memory devices, four of which exhibit binary resistive switching performance with ON/OFF ratio about 102.02-102.44. Interestingly, the trialkyl phosphorus -bearing one demonstrates excellent ternary memory performance with considerable ON2/ON1/OFF current ratio of 102.30:104.22:1, relatively low set voltages (0.99 and 1.68 V), good reliability, and high ternary yield of 66 %. Besides, two trialkyl phosphorus-containing ferrocene@PS composites also illustrate typical ternary resistive switching behavior with ON2/ON1/OFF current ratio of 102.34:103.78:1 and 101.97:104.47:1. Their ON1 states stem the increased dihedral angle of two naphthaline rings with the injection of hot carriers (for binaphthol derivants) and oxidation of ferrocene units (for ferrocene derivants). Interestingly, the ON2 states root from the flattening of tricoordinate phosphorus, which can enhance the conjugated degree, and as a result, higher conductivities. The rigid PS matrix can act as charge blocking layer and aggregation-inhibited species. The introduction of trialkyl phosphorus will be an efficient strategy for implementing low cost organic multi-level memorizer.
Keyword ：
Binaphthol Binaphthol ferrocene derivants ferrocene derivants Organic@polystyrene composite Organic@polystyrene composite Resistive switching mechanism Resistive switching mechanism Ternary memorizer Ternary memorizer Trialkyl phosphorus Trialkyl phosphorus
Cite：
Copy from the list or Export to your reference management。
| GB/T 7714 | Liu, Yuan-Zheng , Liu, Yue , Chen, Bin-Jun et al. Elevating the resistive memory from binary to ternary by introducing trialkyl phosphorus into binaphthol/ferrocene cores in their polystyrene composites [J]. | MATERIALS TODAY COMMUNICATIONS , 2022 , 33 . |
| MLA | Liu, Yuan-Zheng et al. "Elevating the resistive memory from binary to ternary by introducing trialkyl phosphorus into binaphthol/ferrocene cores in their polystyrene composites" . | MATERIALS TODAY COMMUNICATIONS 33 (2022) . |
| APA | Liu, Yuan-Zheng , Liu, Yue , Chen, Bin-Jun , Yang, Hai-Long , Lin, Xiao-Li , Li, Hao-Hong et al. Elevating the resistive memory from binary to ternary by introducing trialkyl phosphorus into binaphthol/ferrocene cores in their polystyrene composites . | MATERIALS TODAY COMMUNICATIONS , 2022 , 33 . |
| Export to | NoteExpress RIS BibTex |
Version ：
Abstract ：
Metal organic frameworks (MOFs) contain ordered pores capable of encapsulating varied types of guests and provide a platform to expand the flexibility and versatility of the host-guest composites. Herein, by encapsulating CH3NH3PbBr3 NPS into Ln-MOFs (Ln = La, Nd, Pr, Sm), four CH3NH3PbBr3@Ln-MOFs host-guest composites were fabricated and served as a bifunctional platform. The temperature-dependent luminescence properties of the CH3NH3PbBr3@Ln-MOFs were explored and the results revealed their tuneable green luminescence perfor-mance. In particular, the CH3NH3PbBr3@Sm-MOF exhibits a variety of colours from green to blue to purple and an excellent quantum yield of 0.98. The photocurrent responses and theoretical calculations reveal the enhancement mechanism of CH3NH3PbBr3 on charge-hole separation owing to its unique host-guest synergy. Moreover, the CH3NH3PbBr3@Sm-MOF exhibits the excellent electrical bi-stability with a high ON/OFF ratio of 104. Hence, the CH3NH3PbBr3@Ln-MOFs host-guest composites are promising candidates for a new generation of photovoltaic, light-emitting, and switching memories devices.
Keyword ：
Electrical bistability Electrical bistability Host-guest composites Host-guest composites Lanthanide metal-organic framework Lanthanide metal-organic framework Perovskite nanoparticles Perovskite nanoparticles Switching memories devices Switching memories devices
Cite：
Copy from the list or Export to your reference management。
| GB/T 7714 | Zhao, Liming , Redshaw, Carl , Ding, Kuixing et al. Host-guest synergy of CH3NH3PbBr3@Ln-MOFs enabling tunable green luminescence and switchable memory [J]. | APPLIED SURFACE SCIENCE , 2022 , 614 . |
| MLA | Zhao, Liming et al. "Host-guest synergy of CH3NH3PbBr3@Ln-MOFs enabling tunable green luminescence and switchable memory" . | APPLIED SURFACE SCIENCE 614 (2022) . |
| APA | Zhao, Liming , Redshaw, Carl , Ding, Kuixing , Zhang, Pengyue , Chen, Bin , Chen, Zhirong et al. Host-guest synergy of CH3NH3PbBr3@Ln-MOFs enabling tunable green luminescence and switchable memory . | APPLIED SURFACE SCIENCE , 2022 , 614 . |
| Export to | NoteExpress RIS BibTex |
Version ：
Export
| Results： |
Selected to |
| Format： |
