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学者姓名：孙捷
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以超高密度Cu/Sn微凸点和Cu/SnAg微凸点为研究对象,采用COMSOL软件建立仿真模型,研究了不同焊料凸点高度对键合可靠性的影响;采用电镀法制备Cu/Sn凸点阵列和Cu/SnAg凸点阵列,重点对界面处金属间化合物(Intermetallic compounds,IMC)进行研究.结果表明,Cu/SnAg凸点高度的增加有利于降低凸点键合界面应力,从而提高芯片键合可靠性.金属凸点尺寸越小,界面处金属间化合物生长越快,空洞数量越多.雾锡凸点的晶粒尺寸大于亮锡凸点,而且晶界数量较少,使得凸点界面上IMC的生长速度较慢.因此,雾锡凸点能够有效减少凸点界面空洞的形成,SnAg合金替代纯锡材料可以进一步减少凸点界面空洞的形成.通过优化工艺条件,成功制备出点间距为8 μm,像素阵列为1 920×1 080的超高密度Cu/SnAg金属凸点.
Keyword ：
Cu/SnAg凸点 Cu/SnAg凸点 Cu/Sn凸点 Cu/Sn凸点 电镀 电镀 金属间化合物 金属间化合物
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| GB/T 7714 | 罗灿琳 , 林畅 , 曾煌杰 et al. 电镀法制备超高密度Cu/Sn凸点和Cu/SnAg凸点及其微观形貌研究 [J]. | 光电子技术 , 2025 , 45 (1) : 10-17 . |
| MLA | 罗灿琳 et al. "电镀法制备超高密度Cu/Sn凸点和Cu/SnAg凸点及其微观形貌研究" . | 光电子技术 45 . 1 (2025) : 10-17 . |
| APA | 罗灿琳 , 林畅 , 曾煌杰 , 张永爱 , 孙捷 , 严群 et al. 电镀法制备超高密度Cu/Sn凸点和Cu/SnAg凸点及其微观形貌研究 . | 光电子技术 , 2025 , 45 (1) , 10-17 . |
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GaN and related III-nitrides have attracted significant attention due to their excellent performance and extensive applications. However, the substrates for epitaxial growth of III-nitride films are limited to a few options, such as SiC, Si, and sapphire, which suffer from significant shortcomings including high cost, lattice mismatch, and thermal expansion coefficient mismatch. In this study, AlN film with c-axis orientation was deposited on a 2-inch polycrystalline Mo substrate using reactive magnetron sputtering, leveraging the advantages of Mo. Additionally, the influence of a two-dimensional graphene (Gr) insertion layer on the epitaxy of III-nitrides on Mo was investigated. The introduction of Gr slightly reduced the grain size of the AlN by about 10 nm. However, the Gr induced some in-plane tensile strain in the AlN film, which compensated the compressive strain in the subsequently grown GaN, resulting in a more undistorted GaN lattice with a c-axis strain of only 0.01 %. Continuous GaN films were successfully epitaxially grown on the sputtered AlN buffer layers, which are with c-axis preferred orientation and ultraviolet emission at similar to 3.36 eV. The grain size of GaN increased by about 5 nm and the full width at half maximum of the photoluminescence spectra also decreased by about 2.5 nm after the insertion of Gr. Our investigation indicates that Mo or Gr/Mo substrates are promising candidates for the heteroepitaxial growth of GaN films using sputtered AlN buffer layers. This work also provides a valuable strategy for low-cost and high-quality heteroepitaxy of other III-nitrides.
Keyword ：
AlN AlN GaN GaN Graphene Graphene Heteroepitaxy Heteroepitaxy Mo substrate Mo substrate
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| GB/T 7714 | Li, Yang , Chen, Jia , Pan, Kui et al. Polycrystalline Mo as the substrate for heteroepitaxy of GaN using sputtered AlN buffer layer [J]. | JOURNAL OF CRYSTAL GROWTH , 2025 , 660 . |
| MLA | Li, Yang et al. "Polycrystalline Mo as the substrate for heteroepitaxy of GaN using sputtered AlN buffer layer" . | JOURNAL OF CRYSTAL GROWTH 660 (2025) . |
| APA | Li, Yang , Chen, Jia , Pan, Kui , Chen, Qinzhong , Zhang, Ke , Lin, Zhihe et al. Polycrystalline Mo as the substrate for heteroepitaxy of GaN using sputtered AlN buffer layer . | JOURNAL OF CRYSTAL GROWTH , 2025 , 660 . |
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This study introduces innovative structural enhancements in deep ultraviolet LEDs (DUV-LEDs) to optimize Performance. By implementing a 46.9 degrees sloped mesa sidewall, we have designed what we believe to be two novel structures: an n-electrode hole structure that extends the active region and an interrupted mesa structure that significantly enlarges the sidewall area. We investigated the effects of these structures on DUV-LED performance independently and demonstrated that both single structure devices surpass the performance of conventional DUV-LEDs. Notably, the interrupted mesa structure yields a more substantial performance enhancement at higher injection currents, while the n-electrode hole structure excels at lower currents. Meanwhile, this paper also prepared two kinds of DUV-LEDs with parallel and staggered rows of mesa and n-electrode holes by combining the above two single structures on the same device. Compared with the single structure device, the performance of these combined structure devices is further improved, in which the performance of the DUV-LEDs with staggered rows of mesa and n-electrode holes is even better, the external quantum efficiency (EQE) and wall plug efficiency (WPE) of 9.19% and 7.13% at 250 mA operating current, which is an improvement of 9.6% and 4.4%, respectively, compared with that of the conventional DUV-LEDs. Furthermore, the enhancement in performance will be augmented with an increase in current, due to the efficient conversion of active area to sidewall area. At 500 mA, the optical power of the staggered-array device is increased by 10.6% compared to conventional DUV-LEDs; at 1000 mA, the optical power is increased by 17.7%.
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| GB/T 7714 | Xu, Hao , Liu, ZiYuan , Guo, Weilng et al. Enhancing the performance of high-power DUV-LEDs with sloped sidewall by introducing N-electrode holes and interrupted mesa [J]. | OPTICS EXPRESS , 2025 , 33 (8) : 17253-17264 . |
| MLA | Xu, Hao et al. "Enhancing the performance of high-power DUV-LEDs with sloped sidewall by introducing N-electrode holes and interrupted mesa" . | OPTICS EXPRESS 33 . 8 (2025) : 17253-17264 . |
| APA | Xu, Hao , Liu, ZiYuan , Guo, Weilng , Sun, Jie , Fang, Aoqi , Liu, Jixin . Enhancing the performance of high-power DUV-LEDs with sloped sidewall by introducing N-electrode holes and interrupted mesa . | OPTICS EXPRESS , 2025 , 33 (8) , 17253-17264 . |
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Micro Light Emitting Diode (Micro-LED) technology, characterized by exceptional brightness, low power consumption, fast response, and long lifespan, holds significant potential for next-generation displays, yet its commercialization hinges on resolving challenges in high-density interconnect fabrication, particularly micrometer-scale bump formation. Traditional fabrication approaches such as evaporation enable precise bump control but face scalability and cost limitations, while electroplating offers lower costs and higher throughput but suffers from substrate conductivity requirements and uneven current density distributions that compromise bump-height uniformity. Emerging alternatives include electroless plating, which achieves uniform metal deposition on non-conductive substrates through autocatalytic reactions albeit with slower deposition rates; ball mounting and dip soldering, which streamline processes via automated solder jetting or alloy immersion but struggle with bump miniaturization and low yield; and photosensitive conductive polymers that simplify fabrication via photolithography-patterned composites but lack validated long-term stability. Persistent challenges in achieving micrometer-scale uniformity, thermomechanical stability, and environmental compatibility underscore the need for integrated hybrid processes, eco-friendly manufacturing protocols, and novel material innovations to enable ultra-high-resolution and flexible Micro-LED implementations. This review systematically compares conventional and emerging methodologies, identifies critical technological bottlenecks, and proposes strategic guidelines for industrial-scale production of high-density Micro-LED displays.
Keyword ：
ball mounting ball mounting bump fabrication bump fabrication dip soldering dip soldering electroless plating electroless plating electroplating electroplating evaporation evaporation high-density interconnects high-density interconnects Micro-LED Micro-LED photosensitive conductive polymers photosensitive conductive polymers
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| GB/T 7714 | Wu, Xin , Zhu, Xueqi , Wang, Shuaishuai et al. Bump-Fabrication Technologies for Micro-LED Display: A Review [J]. | MATERIALS , 2025 , 18 (8) . |
| MLA | Wu, Xin et al. "Bump-Fabrication Technologies for Micro-LED Display: A Review" . | MATERIALS 18 . 8 (2025) . |
| APA | Wu, Xin , Zhu, Xueqi , Wang, Shuaishuai , Tang, Xuehuang , Lang, Taifu , Belyaev, Victor et al. Bump-Fabrication Technologies for Micro-LED Display: A Review . | MATERIALS , 2025 , 18 (8) . |
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Micro light-emitting diode (Micro-LED) is considered as an ideal candidate for near-eye, outdoor display, and light field photography applications. At present, the commercialization of full-color Micro-LED is limited by the mass transfer of red, green, and blue (R-B-G) sub-pixels. Hence, we proposed a full-color scheme of vertically stacked tricolor Micro-LED layers to avoid mass transfer, which owns over 1000 PPI (pixel per inch). In this solution, the sidewall-insulated via in the epilayer plays a critical role to achieve the electrical and mechanical integration of three monochromatic Micro-LEDs with Si-based complementary metal-oxide semiconductor (CMOS) driver. Therefore, the via processes of GaN-based epilayer were investigated systematically using available semiconductor processes in this article. The inductively coupled plasma (ICP) etching was employed to create the ultra-small micro-structure array using SiO2 thin film as hard mask. Sidewall-insulated vias were fabricated with different aperture sizes (9.3, 7.5, and 3.4 mu m) and a depth of about 4-mu m. The vias with large aspect ratio are completely satisfy the requirement of designed vertical interconnection. This study aims to provide valuable reference for the commercial progress of high-resolution and full-color Micro-LEDs.
Keyword ：
ICP etching ICP etching Micro-LED Micro-LED Sidewall-insulated GaN via Sidewall-insulated GaN via Vertical interconnection Vertical interconnection
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| GB/T 7714 | Li, Yang , Zhang, Kaixin , Yang, Tianxi et al. Investigation of ultrasmall sidewall-insulated GaN via with large aspect ratio for the strategy of vertically stacked full-color Micro-LEDs [J]. | OPTICS COMMUNICATIONS , 2025 , 575 . |
| MLA | Li, Yang et al. "Investigation of ultrasmall sidewall-insulated GaN via with large aspect ratio for the strategy of vertically stacked full-color Micro-LEDs" . | OPTICS COMMUNICATIONS 575 (2025) . |
| APA | Li, Yang , Zhang, Kaixin , Yang, Tianxi , Nie, Junyang , Li, Qiwei , Zhou, Yijian et al. Investigation of ultrasmall sidewall-insulated GaN via with large aspect ratio for the strategy of vertically stacked full-color Micro-LEDs . | OPTICS COMMUNICATIONS , 2025 , 575 . |
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This paper reports on a micropillar micro-light-emitting diode (MP-mu LED) enhanced by a graphene conductive layer and SiO2-coated Ag nanoparticles (Ag/SiO2 NPs). The micropillar structure enables direct contact between Ag/SiO2 NPs and the quantum well (QW), leveraging localized surface plasmon resonance (LSPR) to enhance the emission of QW. The SiO2 coating on Ag serves as an insulating layer, preventing energy leakage through electron tunneling between QW-Ag and Ag-Ag interfaces. Graphene, used as a transparent conductive layer, integrates the individual micropillars into a cohesive structure, ensuring efficient current spreading and uniform light emission. Compared to plane mu LEDs of the same mesa size, the MP-mu LED with graphene transparent electrodes and LSPR enhancement shows an improvement of 44% in external quantum efficiency (EQE) and 45% in wall plug efficiency (WPE) at a current density of 1000 A/cm2. This study demonstrates the significant application potential of LSPR and micropillar structures in mu LED technology.
Keyword ：
graphene graphene localized surface plasmon resonance localized surface plasmon resonance micro-LED micro-LED micropillar micropillar
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| GB/T 7714 | Fang, Aoqi , Li, Qingqing , Liu, Jixin et al. Enhanced Light Emission of Micro LEDs Using Graphene-Connected Micropillar Structures and Ag/SiO2 Nanoparticles [J]. | ACS PHOTONICS , 2025 , 12 (3) : 1342-1350 . |
| MLA | Fang, Aoqi et al. "Enhanced Light Emission of Micro LEDs Using Graphene-Connected Micropillar Structures and Ag/SiO2 Nanoparticles" . | ACS PHOTONICS 12 . 3 (2025) : 1342-1350 . |
| APA | Fang, Aoqi , Li, Qingqing , Liu, Jixin , Du, Zaifa , Tang, Penghao , Xu, Hao et al. Enhanced Light Emission of Micro LEDs Using Graphene-Connected Micropillar Structures and Ag/SiO2 Nanoparticles . | ACS PHOTONICS , 2025 , 12 (3) , 1342-1350 . |
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Micro light-emitting diode (Micro-LED) is widely regarded as a highly promising technology in the current display field due to its excellent performance, but the core issue hindering the further development of Micro-LED is how to achieve high-precision and high-yield transfer. In this study, laser-induced forward transfer (LIFT) is adopted as the main technique, and a novel blister-type dynamic release layer (DRL) material is selected, characterized by a gentle transfer process and minimal residue on the chip after transfer. Chip-on-wafer (COW) is a structure that fabricates a large number of Micro-LEDs (15 x 30 mu m2) on a sapphire substrate. The COW-on-head (COH) chip bonding method can control the uniformity of the overall chip height before transfer within 3.5%, which is favorable for subsequent stable transfer. Based on the analysis of the close relationship between the transfer gap and laser energy density, this study successfully achieved the transfer of red/green/blue (R/G/B) Micro-LED chips (6400, respectively) onto the corresponding chip-on-carrier 2 (COC-2), and all of them have achieved a one-step transfer yield of over 99.3% and an average chip transfer offset of 2 mu m or less. It is worth mentioning that the one-step transfer yield mentioned in this paper is different from the yield after testing and repairing the chips. The one-step transfer yield can fully reflect the transfer quality. In order to verify the validity of this study, a 1 in., full-color, active Micro-LED display with a pixel size of 114 pixels per inch (PPI) and a display brightness of 5598 cd/m2 was successfully fabricated. This study proposes an optimized solution for Micro-LED transfer technology, which will help accelerate the mass production and marketization of Micro-LED.
Keyword ：
blister-type blister-type DRL DRL full-color full-color laser laser mass transfer mass transfer micro-LED micro-LED
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| GB/T 7714 | Huang, Xinrui , Liu, Qian , Jiang, Jinkun et al. High-Yield and High-Accuracy Mass Transfer of Full-Color Micro-LEDs Using a Blister-Type Dynamic Release Polymer [J]. | ACS APPLIED MATERIALS & INTERFACES , 2025 , 17 (19) : 28622-28631 . |
| MLA | Huang, Xinrui et al. "High-Yield and High-Accuracy Mass Transfer of Full-Color Micro-LEDs Using a Blister-Type Dynamic Release Polymer" . | ACS APPLIED MATERIALS & INTERFACES 17 . 19 (2025) : 28622-28631 . |
| APA | Huang, Xinrui , Liu, Qian , Jiang, Jinkun , Tang, Xuehuang , Lin, Xin , Xie, Yujie et al. High-Yield and High-Accuracy Mass Transfer of Full-Color Micro-LEDs Using a Blister-Type Dynamic Release Polymer . | ACS APPLIED MATERIALS & INTERFACES , 2025 , 17 (19) , 28622-28631 . |
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Traditional semiconductor used as channel materials in driving transistors suffer from significant performance degradation as the semiconductor thickness is reduced. The two-dimensional (2D) materials with smooth, dangling-bond-free surfaces, represented by graphene, can be alternatives. Graphene boasts several advantages, including structural stability, ultra-thin thickness, near-total transparency, exceptional flexibility, and high mobility. Therefore, graphene field-effect transistors (GFETs) in the paper are used to drive Micro-light-emitting diodes (Micro-LEDs), key elements in next-generation advanced displays due to their high resolution, high brightness, high contrast, etc. Importantly, this study addresses the two major bottlenecks i.e. Micro-LEDs' mass transfer and graphene transfer. That is, monolithically integrated devices of Micro-LED and its driver GFET are designed and fabricated, bypassing the issue of traditional Micro-LEDs' mass transfer. For the first time, transfer-free method by plasma-enhanced chemical vapor deposition (PECVD) is used to grow graphene directly on GaN Micro-LED samples and prepared graphene transistors. This approach avoids doping and damage to the graphene during the transfer process, significantly shortens the growth time, and improves the fabrication efficiency. The devices possess broad applications potential and compatibility with semiconductor planar processes. This study paves the way for the transfer-free growth of graphene and the integration of Micro-LEDs with 2D materials transistors.
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| GB/T 7714 | Liu, Jixin , Sun, Jie , Mei, Yu et al. Monolithic integration of GaN Micro-LEDs to active matrix driving transistors made on transfer-free graphene [J]. | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , 2025 , 186 . |
| MLA | Liu, Jixin et al. "Monolithic integration of GaN Micro-LEDs to active matrix driving transistors made on transfer-free graphene" . | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 186 (2025) . |
| APA | Liu, Jixin , Sun, Jie , Mei, Yu , Fang, Aoqi , Tang, Penghao , Xu, Hao et al. Monolithic integration of GaN Micro-LEDs to active matrix driving transistors made on transfer-free graphene . | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , 2025 , 186 . |
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Nano-light-emitting diodes (LEDs) are ideal for ultra-high resolution displays due to their small size and high pixel density. However, traditional photolithography techniques fall short in meeting the requirements for nanoscale LED fabrication. Besides, as the size decreases and the specific surface area increases, non-radiative recombination generated by sidewalls defects becomes a significant issue, affecting the efficiency of nano-LEDs. To address this challenge, a nano-LED array with a single nanorod size of 800 nm was fabricated in this work by using nanosphere lithography and etching technology. Meanwhile, localized surface plasmons (LSPs) coupling technology was employed to enhance the PL efficiency of these nano-LEDs. By comparing with bare nano-LEDs, the PL intensity was boosted by about 43% and 129% when Ag and Ag@SiO2 nanoparticles were added separately. The existence of LSPs coupling process has been further confirmed through time-resolved photoluminescence measurement and finite element simulation analysis of different samples. The results provide compelling evidence for the LSPs coupling technology in enhancing the efficiency of nanoscale LEDs.
Keyword ：
micro-LED micro-LED nanorod nanorod photoluminescence photoluminescence
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| GB/T 7714 | Du, Zaifa , Fang, Aoqi , Tang, Penghao et al. Photoluminescence intensity enhancement of nanorod micro-LEDs via localized surface plasmon coupling [J]. | JOURNAL OF PHYSICS D-APPLIED PHYSICS , 2025 , 58 (5) . |
| MLA | Du, Zaifa et al. "Photoluminescence intensity enhancement of nanorod micro-LEDs via localized surface plasmon coupling" . | JOURNAL OF PHYSICS D-APPLIED PHYSICS 58 . 5 (2025) . |
| APA | Du, Zaifa , Fang, Aoqi , Tang, Penghao , Fan, Xinmin , Sun, Jie , Guo, Weiling et al. Photoluminescence intensity enhancement of nanorod micro-LEDs via localized surface plasmon coupling . | JOURNAL OF PHYSICS D-APPLIED PHYSICS , 2025 , 58 (5) . |
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This study aims to achieve high-yield micro-LED chip bonding and thus further advance the innovation of micro-LED interconnection technology. In this research, an electroless plating method was used to achieve the highly uniform nickel bump arrays on a thin-film transistor (TFT) driver substrate. Initially, the photoresists AZ4620 and AZ2070 are chosen for the experiments, which can cover the step structure uniformly of TFT substrate. Subsequently, the shape of bumps on the TFT substrate influenced by the plasma treatment and the deposition time was investigated. The result indicated that microbump arrays with a uniformity of less than 1% could be successfully fabricated by employing a 5-min plasma treatment and incorporating surfactant additions at concentrations of 0.02%, and the process of preparation has a high repeatability, which lays a solid foundation for the subsequent electroless plating bonding, and provides a critical reference for the breakthrough of micro-LED interconnection key technology.
Keyword ：
electroless plating electroless plating highly uniform highly uniform micro-LED micro-LED nickel bump nickel bump
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| GB/T 7714 | Wang, Shuaishuai , Lu, Yu , Zhang, Kaixin et al. Electroless fabrication of super uniform nickel bumps on the TFT driver substrates for micro-LED display [J]. | JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY , 2025 . |
| MLA | Wang, Shuaishuai et al. "Electroless fabrication of super uniform nickel bumps on the TFT driver substrates for micro-LED display" . | JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY (2025) . |
| APA | Wang, Shuaishuai , Lu, Yu , Zhang, Kaixin , Huang, Zhonghang , Yang, Tianxi , Lin, Chang et al. Electroless fabrication of super uniform nickel bumps on the TFT driver substrates for micro-LED display . | JOURNAL OF THE SOCIETY FOR INFORMATION DISPLAY , 2025 . |
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