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一种锦纶6民用长丝纤维用炭黑母粒及其制备方法与应用 incoPat
专利 | 2021-05-06 | CN202110490993.5
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Abstract :

本发明公开了一种锦纶6民用长丝纤维用炭黑母粒及其制备方法与应用,该锦纶6民用长丝纤维用炭黑母粒包括57‑79wt%的聚酰胺6切片、20‑40wt%的纳米级炭黑粉末、1‑3wt%的单一型炭黑超分散剂粉末;该制备方法将原料依次经定量加料、熔融塑化、螺杆传输与剪切、水冷切粒、振动筛选和鼓风干燥,制备得到锦纶6民用长丝纤维用炭黑母粒;本发明提供的锦纶6民用长丝纤维用炭黑母粒可直接应用于生产黒色锦纶6民用长丝纤维,染色效果优良,可实现连续生产,纺丝过程中纺丝组件的生产周期可达21‑24天,且能有效解决母粒在用于长周期纺丝生产的后期因喷丝板磨损导致纺丝抖动造成条干不均匀和毛丝陡增的难题,为黑色锦纶6民用长丝纤维的连续生产提供新的材料选择。

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GB/T 7714 张子明 . 一种锦纶6民用长丝纤维用炭黑母粒及其制备方法与应用 : CN202110490993.5[P]. | 2021-05-06 .
MLA 张子明 . "一种锦纶6民用长丝纤维用炭黑母粒及其制备方法与应用" : CN202110490993.5. | 2021-05-06 .
APA 张子明 . 一种锦纶6民用长丝纤维用炭黑母粒及其制备方法与应用 : CN202110490993.5. | 2021-05-06 .
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Chemical Synthesis and Integration of Highly Conductive PdTe2 with Low-Dimensional Semiconductors for p-Type Transistors with Low Contact Barriers SCIE
期刊论文 | 2021 , 33 (27) | ADVANCED MATERIALS
WoS CC Cited Count: 19
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Abstract :

Low-dimensional semiconductors provide promising ultrathin channels for constructing more-than-Moore devices. However, the prominent contact barriers at the semiconductor-metal electrodes interfaces greatly limit the performance of the obtained devices. Here, a chemical approach is developed for the construction of p-type field-effect transistors (FETs) with low contact barriers by achieving the simultaneous synthesis and integration of 2D PdTe2 with various low-dimensional semiconductors. The 2D PdTe2 synthesized through a quasi-liquid process exhibits high electrical conductivity (approximate to 4.3 x 10(6) S m(-1)) and thermal conductivity (approximate to 130 W m(-1) K-1), superior to other transition metal dichalcogenides (TMDCs) and even higher than some metals. In addition, PdTe2 electrodes with desired geometry can be synthesized directly on 2D MoTe2 and other semiconductors to form high-performance p-type FETs without any further treatment. The chemically derived atomically ordered PdTe2-MoTe2 interface results in significantly reduced contact barrier (65 vs 240 meV) and thus increases the performance of the obtained devices. This work demonstrates the great potential of 2D PdTe2 as contact materials and also opens up a new avenue for the future device fabrication through the chemical construction and integration of 2D components.

Keyword :

(2) (2) 2D crystals 2D crystals chemical integration chemical integration effect transistors effect transistors field&#8208 field&#8208 PdTe PdTe

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GB/T 7714 Zheng, Jingying , Miao, Tingting , Xu, Rui et al. Chemical Synthesis and Integration of Highly Conductive PdTe2 with Low-Dimensional Semiconductors for p-Type Transistors with Low Contact Barriers [J]. | ADVANCED MATERIALS , 2021 , 33 (27) .
MLA Zheng, Jingying et al. "Chemical Synthesis and Integration of Highly Conductive PdTe2 with Low-Dimensional Semiconductors for p-Type Transistors with Low Contact Barriers" . | ADVANCED MATERIALS 33 . 27 (2021) .
APA Zheng, Jingying , Miao, Tingting , Xu, Rui , Ping, Xiaofan , Wu, Yueyang , Lu, Zhixing et al. Chemical Synthesis and Integration of Highly Conductive PdTe2 with Low-Dimensional Semiconductors for p-Type Transistors with Low Contact Barriers . | ADVANCED MATERIALS , 2021 , 33 (27) .
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Rapid and Large-Scale Quality Assessment of Two-Dimensional MoS2 Using Sulfur Particles with Optical Visualization SCIE
期刊论文 | 2021 , 21 (3) , 1260-1266 | NANO LETTERS
WoS CC Cited Count: 10
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The efficient nondestructive assessment of quality and homogeneity for two-dimensional (2D) MoS2 is critically important to advance their practical applications. Here, we presented a rapid and large-area assessment method for visually evaluating the quality and uniformity of chemical vapor deposition (CVD)-grown MoS2 monolayers simply with conventional optical microscopes. This was achieved through one-pot adsorbing abundant sulfur particles selectively onto as-grown poorer-quality MoS2 monolayers in a CVD system without any additional treatment. We further revealed that this favorable adsorption of sulfur particles on MoS2 originated from their intrinsic higher-density sulfur vacancies. Based on unadsorbed WS, monolayers, superior performance field effect transistors with a mobility of similar to 49 cm(2) V-1 s(-1) were constructed. Importantly, the assessment approach was noninvasive due to the all-vapor-phase and moderate adsorption-desorption process. Our work offers a new route for the performance and yield optimization of devices by quality assessment of 2D semiconductors prior to device fabrication.

Keyword :

field effect transistors field effect transistors molybdenum disulfide molybdenum disulfide optical visualization optical visualization quality assessment quality assessment sulfur particles sulfur particles two-dimensional materials two-dimensional materials

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GB/T 7714 Zheng, Jingying , Du, Haotian , Jiang, Fan et al. Rapid and Large-Scale Quality Assessment of Two-Dimensional MoS2 Using Sulfur Particles with Optical Visualization [J]. | NANO LETTERS , 2021 , 21 (3) : 1260-1266 .
MLA Zheng, Jingying et al. "Rapid and Large-Scale Quality Assessment of Two-Dimensional MoS2 Using Sulfur Particles with Optical Visualization" . | NANO LETTERS 21 . 3 (2021) : 1260-1266 .
APA Zheng, Jingying , Du, Haotian , Jiang, Fan , Zhang, Ziming , Sa, Baisheng , He, Wenhui et al. Rapid and Large-Scale Quality Assessment of Two-Dimensional MoS2 Using Sulfur Particles with Optical Visualization . | NANO LETTERS , 2021 , 21 (3) , 1260-1266 .
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两种含有2,2'P-bipy及[MoO3]簇骼化合物的结构与谱学关系研究 CQVIP CSCD PKU
期刊论文 | 2013 , 33 (11) , 2953-2958 | 光谱学与光谱分析
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利用程序控温的水热合成法得到了两种含有2,2'-bipy及[M003]簇骼的化合物:[(2,2'-bipy)2(Mo03)3]。(工)和[(2,2'-bipy)(M003)]n(11)。为了阐明这两个化合物结构与谱学的关系,通过XRD、FT-IR、热微扰2D-IR相关光谱、TG分析、SEM、高温红外分析、uV_visDRS光谱和固体荧光光谱研究手段进行研究,进而探讨结构与性能的关系。其XRD说明了化合物I和Ⅱ是纯物相;FTIR的特征振动频率和热微扰2D-IR相关光谱的响应峰与化合物I和Ⅱ的结构解析相一致,2D-IR的同步和异步相关光谱图还确定了化合物I和Ⅱ的钼氧簇骼振动强度随升温变化的先后顺序与高温红外解析相一致;通过TG分析和高温红外分析研究化合物I和Ⅱ的热稳定性;化合物I和Ⅱ的UV Vis DRS光谱显示在225~350 nm有宽的紫外吸收谱带;化合物I和Ⅱ的固体荧光光谱分别在277和295nm的激发下得到的最强发射峰值分别为460和480nm。本文阐明了化合物I和Ⅱ的配位情况,揭示了价电子在分子中相应能级间跃迁的内在规律;还验证了弱相互作用力在配合物的结构框架中不但起稳定作用,而且在耐热性扮演重要的角色。

Keyword :

二维相关光谱 二维相关光谱 光谱分析 光谱分析 晶体结构 晶体结构 钼酸盐 钼酸盐

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GB/T 7714 张子明 , 陈义平 , 尤珠钗 et al. 两种含有2,2'P-bipy及[MoO3]簇骼化合物的结构与谱学关系研究 [J]. | 光谱学与光谱分析 , 2013 , 33 (11) : 2953-2958 .
MLA 张子明 et al. "两种含有2,2'P-bipy及[MoO3]簇骼化合物的结构与谱学关系研究" . | 光谱学与光谱分析 33 . 11 (2013) : 2953-2958 .
APA 张子明 , 陈义平 , 尤珠钗 , 苏柳钦 , 王昊 , 孙燕琼 . 两种含有2,2'P-bipy及[MoO3]簇骼化合物的结构与谱学关系研究 . | 光谱学与光谱分析 , 2013 , 33 (11) , 2953-2958 .
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两种含有2,2′-bipy及[MoO_3]簇骼化合物的结构与谱学关系研究 CSCD PKU
期刊论文 | 2013 , 33 (11) , 2953-2958 | 光谱学与光谱分析
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Abstract :

利用程序控温的水热合成法得到了两种含有2,2′-bipy及[MoO3]簇骼的化合物:[(2,2′-bipy)2(MoO3)3]n(Ⅰ)和[(2,2′-bipy)(MoO3)]n(Ⅱ)。为了阐明这两个化合物结构与谱学的关系,通过XRD、FTIR、热微扰2D-IR相关光谱、TG分析、SEM、高温红外分析、UV-Vis DRS光谱和固体荧光光谱研究手段进行研究,进而探讨结构与性能的关系。其XRD说明了化合物Ⅰ和Ⅱ是纯物相;FTIR的特征振动频率和热微扰2D-IR相关光谱的响应峰与化合物Ⅰ和Ⅱ的结构解析相一致,2D-IR的同步和异步相关光谱图还确定了化合物Ⅰ和Ⅱ的钼氧簇骼振动强度随升温变化的先后顺序与...

Keyword :

二维相关光谱 二维相关光谱 光谱分析 光谱分析 晶体结构 晶体结构 钼酸盐 钼酸盐

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GB/T 7714 张子明 , 陈义平 , 尤珠钗 et al. 两种含有2,2′-bipy及[MoO_3]簇骼化合物的结构与谱学关系研究 [J]. | 光谱学与光谱分析 , 2013 , 33 (11) : 2953-2958 .
MLA 张子明 et al. "两种含有2,2′-bipy及[MoO_3]簇骼化合物的结构与谱学关系研究" . | 光谱学与光谱分析 33 . 11 (2013) : 2953-2958 .
APA 张子明 , 陈义平 , 尤珠钗 , 苏柳钦 , 王昊 , 孙燕琼 . 两种含有2,2′-bipy及[MoO_3]簇骼化合物的结构与谱学关系研究 . | 光谱学与光谱分析 , 2013 , 33 (11) , 2953-2958 .
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