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学者姓名：张海忠
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如何同质外延生长出具有原子级平整的氧化镓(Ga2O3)单晶薄膜,是制备高性能Ga2O3基功率电子器件或紫外光电器件的基础.本文通过金属有机气相外延(MOVPE)技术综合调控外延生长的热力学条件与动力学参数,在Ga2O3衬底上制备了厚度为1.0 µm的器件级Ga2O3单晶薄膜(非故意掺杂),对薄膜样品进行了物相、表面形貌、晶体质量和电学性能的研究.该薄膜具有单一β相,呈现出与衬底相同的(100)面择优取向.对Ga2O3薄膜表面形貌进行AFM表征,呈现出典型的台阶流形貌,表面粗糙度0.166 nm,且台阶高度0.6 nm(a/2),表明薄膜具有原子级平整.进一步通过HRXRD双晶摇摆曲线评估Ga2O3薄膜结晶质量,外延膜的FWHM低于单晶衬底,表明外延在晶格匹配衬底上的Ga2O3薄膜质量优于衬底.霍尔效应测试结果表明,Ga2O3薄膜的电子迁移率为92.1 cm2/(V·s),载流子浓度为2.65×1016cm-3.本文的研究结果表明只要通过精细化调控温度、压力、Ⅵ/Ⅲ比等关键热力学条件,使核心动力学参数中的横向扩散速率充分大于纵向沉积速率,就有可能在通用的非刻意斜切衬底上实现高长速二维"台阶流"生长.本研究所制备的具有优异晶体质量与电学特性的(100)面同质外延单晶薄膜,在制造高性能Ga2O3功率电子器件具有重要的应用潜力.
Keyword ：
MOVPE MOVPE 二维"台阶流"生长 二维"台阶流"生长 单晶薄膜 单晶薄膜 原子级平整 原子级平整 同质外延 同质外延 氧化镓 氧化镓
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| GB/T 7714 | 李悌涛 , 卢耀平 , 陈端阳 et al. 氧化镓同质外延及二维"台阶流"生长研究 [J]. | 人工晶体学报 , 2025 , 54 (2) : 219-226 . |
| MLA | 李悌涛 et al. "氧化镓同质外延及二维"台阶流"生长研究" . | 人工晶体学报 54 . 2 (2025) : 219-226 . |
| APA | 李悌涛 , 卢耀平 , 陈端阳 , 齐红基 , 张海忠 . 氧化镓同质外延及二维"台阶流"生长研究 . | 人工晶体学报 , 2025 , 54 (2) , 219-226 . |
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Solar-blind ultraviolet photodetectors (SBUV-PDs) are utilized in various military and civilian fields, encompassing missile tracking, high-voltage detection, and fire warning systems. Ga2O3 emerges as the prime candidate for such PDs owing to its elevated bandgap, remarkable thermal stability, and facile fabrication process. The metal-semiconductor-metal (MSM) structure garners attention for its swift response time and straightforward preparation, thus becoming a focal point among diverse PD architectures. Nevertheless, the metal surface impedes optical absorption, thereby diminishing the quantum efficiency of the PD. In this work, we introduce a nanograting onto the Ga2O3 surface, which results in a 747-fold increase in responsivity in the SBUV region compared to a normal MSM grating-free structure. Metal gratings can induce surface plasmon polaritons (SPP), thereby augmenting the optical absorption of the PD and stimulating hot electrons to increase photocurrent. However, the broadband response caused by the introduction of metal gratings is a common problem. By optimizing the doping concentration of the Ga2O3 absorption layer, adjusting the incident light intensity, and reverse voltage, the problem of broadband response has been solved. The responsivity of the device in the non-SBUV region is suppressed 24-fold. This methodology holds promise as a reliable approach for fabricating high-performance SBUV-PDs.
Keyword ：
Ga2O3 Ga2O3 metal-semiconductor-metal (MSM) metal-semiconductor-metal (MSM) nanograting nanograting photodetector (PD) photodetector (PD) plasmon plasmon responsivity responsivity
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| GB/T 7714 | Li, Jialong , Yang, Dan , Lu, Xiaoqiang et al. Enhancing Ga2O3 Solar-Blind Photodetectors via Metal Nanogratings [J]. | IEEE SENSORS JOURNAL , 2025 , 25 (1) : 434-442 . |
| MLA | Li, Jialong et al. "Enhancing Ga2O3 Solar-Blind Photodetectors via Metal Nanogratings" . | IEEE SENSORS JOURNAL 25 . 1 (2025) : 434-442 . |
| APA | Li, Jialong , Yang, Dan , Lu, Xiaoqiang , Zhang, Haizhong , Zhu, Minmin . Enhancing Ga2O3 Solar-Blind Photodetectors via Metal Nanogratings . | IEEE SENSORS JOURNAL , 2025 , 25 (1) , 434-442 . |
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Aluminum alloys are renowned for their lightweight nature, resistance to oxidation, and impressive mechanical properties. Despite these advantages, their mechanical performance deteriorates significantly in extreme environments. Herein, we present an innovative solution by developing aluminum matrix composites (AMCs) that incorporate 3D printed alumina ceramic lattices. Our investigation demonstrates a remarkable 112.4 % increase in the strength of AMCs compared to pure aluminum, with a concurrent 54.8 % improvement in modulus under identical conditions. Additionally, as the volume fraction of the ceramic lattice varies from 0.21 to 0.45, the modulus of AMCs exhibits a noteworthy increase, ranging from 96.2 to 106.5 GPa, surpassing that of pure aluminum (68.8 GPa). Notably, even at temperatures of up to 300 degrees C, the strength of the Al2O3-Al composite matrix remains stable at 477.3 MPa. X-ray computed tomography analysis elucidates that the structural integrity of these composites predominantly relies on the load-bearing capacity of the ceramic lattices, complemented by the damping effect provided by the aluminum matrix. This innovative approach not only paves the way for scalable production of high-strength metal alloys in the industrial sector but also holds promise for substantial economic opportunities in the near future.
Keyword ：
Alumina lattice Alumina lattice Aluminum matrix composites Aluminum matrix composites Stereolithography 3D printing Stereolithography 3D printing Strength Strength X-ray computed tomography X-ray computed tomography
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| GB/T 7714 | Zhu, Minmin , Deng, Caozhuang , Zhang, Zhanfeng et al. Stereolithography 3D printing ceramics for ultrahigh strength aluminum matrix composites [J]. | JOURNAL OF MANUFACTURING PROCESSES , 2025 , 139 : 126-132 . |
| MLA | Zhu, Minmin et al. "Stereolithography 3D printing ceramics for ultrahigh strength aluminum matrix composites" . | JOURNAL OF MANUFACTURING PROCESSES 139 (2025) : 126-132 . |
| APA | Zhu, Minmin , Deng, Caozhuang , Zhang, Zhanfeng , Yang, Dan , Zhang, Haizhong , Wang, Linghua et al. Stereolithography 3D printing ceramics for ultrahigh strength aluminum matrix composites . | JOURNAL OF MANUFACTURING PROCESSES , 2025 , 139 , 126-132 . |
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Optimized inductively coupled plasma (ICP) etching process can improve the surface quality of (1-Ga2O3 thin film to enhance the power figure of merit of (1-Ga2O3 Schottky barrier diodes (SBDs). However, the mechanism of surface quality improvement of ICP etching is not yet clear. In this letter, we verified that the surface qualities of (1-Ga2O3 SBDs could be modified by varying the ratios of BCl3 and Ar etching plasmas. Moreover, electrical performance tests were conducted to verify that the improved surface quality can enhance the electrical properties. Benefitted from the high surface quality of (1-Ga2O3 epitaxial layer, the (1-Ga2O3 SBD without termination structure exhibits a low specific on-resistance (Ron,sp) of 4 m Omega & sdot;cm2 and high breakdown voltage (BV) of 1500 V. These results can pave the way for the preparation of high-performance (1-Ga2O3 power SBDs.
Keyword ：
Beta-phase gallium oxide Beta-phase gallium oxide Inductively coupled plasma etching Inductively coupled plasma etching Schottky barrier diode Schottky barrier diode Surface quality Surface quality
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| GB/T 7714 | Deng, Yicong , Chen, Desen , Li, Titao et al. Surface quality improvement mechanism of ICP etching for Ga2O3 Schottky barrier diode [J]. | MICRO AND NANOSTRUCTURES , 2025 , 199 . |
| MLA | Deng, Yicong et al. "Surface quality improvement mechanism of ICP etching for Ga2O3 Schottky barrier diode" . | MICRO AND NANOSTRUCTURES 199 (2025) . |
| APA | Deng, Yicong , Chen, Desen , Li, Titao , Zhu, Minmin , Xu, Xiaorui , Zhang, Haizhong et al. Surface quality improvement mechanism of ICP etching for Ga2O3 Schottky barrier diode . | MICRO AND NANOSTRUCTURES , 2025 , 199 . |
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The achievement of single crystalline gallium oxide (Ga2 O3 ) homoepitaxial layers with atomic-level smoothness is fundamental for the fabrication of high-performance Ga2 O3 -based power electronics or ultraviolet photodetectors. In this study, metal organic vapor phase epitaxy (MOVPE) technique was employed to comprehensively control the thermodynamic conditions and kinetic factors of epitaxial growth, resulting in the production of unintentionally doped, device-grade Ga2 O3 single crystal films with a thickness of 1. 0 μm on Ga2 O3 substrates. Characterizations of the Ga2 O3 samples were performed to investigate phase composition, surface morphology, crystal quality, and electrical properties. The Ga2 O3 homoepilayer exhibits a single β phase with a preferential orientation matching the (100) plane of the substrate. Atomic force microscopy (AFM) analysis reveals a typical step-flow morphology, with a surface roughness of 0. 166 nm and a step height of 0. 6 nm (a / 2), indicating atomic-level smoothness. High-resolution X-ray diffraction (HRXRD) rocking curve analysis was conducted to further evaluate the crystallinity of the Ga2 O3 epilayers. The full width at half maximum (FWHM) of the epilayers is lower than that of the single crystal substrate, indicating superior quality of the Ga2 O3 epilayers grown on the lattice-matched substrate. Hall effect measurements indicate an electron mobility of 92. 1 cm2 / (V·s) and a carrier concentration of 2. 65 × 1016 cm - 3 . Our results demonstrate that high-growth-rate 2D step-flow growth on commonly used non-intentionally miscut substrates can be achieved as long as the critical thermodynamic conditions, such as temperature, pressure, and the Ⅵ / Ⅲ ratio—are finely tuned to ensure that the lateral diffusion rate of the core kinetic parameters is sufficiently greater than the vertical deposition rate. The exceptional crystal quality and electrical properties highlight the significant potential of these (100) -oriented homoepitaxial films in the development of high-performance Ga2 O3 -based power electronics. © 2025 Chinese Ceramic Society. All rights reserved.
Keyword ：
atomic-level smoothness atomic-level smoothness gallium oxide gallium oxide homoepitaxy homoepitaxy MOVPE MOVPE single-crystalline film single-crystalline film two-dimensional step-flow growth two-dimensional step-flow growth
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| GB/T 7714 | Li, T. , Lu, Y. , Chen, D. et al. Research on Gallium Oxide Homoepitaxy and Two-Dimensional Step-Flow Growth; [氧化镓同质外延及二维“台阶流” 生长研究] [J]. | Journal of Synthetic Crystals , 2025 , 54 (2) : 219-226 . |
| MLA | Li, T. et al. "Research on Gallium Oxide Homoepitaxy and Two-Dimensional Step-Flow Growth; [氧化镓同质外延及二维“台阶流” 生长研究]" . | Journal of Synthetic Crystals 54 . 2 (2025) : 219-226 . |
| APA | Li, T. , Lu, Y. , Chen, D. , Qi, H. , Zhang, H. . Research on Gallium Oxide Homoepitaxy and Two-Dimensional Step-Flow Growth; [氧化镓同质外延及二维“台阶流” 生长研究] . | Journal of Synthetic Crystals , 2025 , 54 (2) , 219-226 . |
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In this Letter, a Ga2O3 vertical Schottky barrier diode (SBD) with self-aligned field plate and mesa termination is fabricated and studied. The combination of field plate and mesa termination can effectively make the electric field distribution uniform in the termination, and thus the proposed SBD features high breakdown voltage (BV). Moreover, to eliminate alignment deviation and simplify the fabrication process, a self-aligned etching process is developed. The experimental results show that a low specific on-resistance of 4.405 mΩ·cm2 and a high BV of 3113 V can be simultaneously derived on the proposed SBD, yielding a high power figure of merit of 2.2 GW/cm2. Meanwhile, a considerably low forward voltage of 1.53 V at 100 A/cm2 is also achieved, demonstrating the low conduction loss of the device. © 2024 Author(s).
Keyword ：
Electric fields Electric fields Etching Etching Gallium compounds Gallium compounds Schottky barrier diodes Schottky barrier diodes
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| GB/T 7714 | Xu, Xiaorui , Deng, Yicong , Li, Titao et al. Over 2 GW/cm2 low-conduction loss Ga2O3 vertical SBD with self-aligned field plate and mesa termination [J]. | Applied Physics Letters , 2024 , 125 (2) . |
| MLA | Xu, Xiaorui et al. "Over 2 GW/cm2 low-conduction loss Ga2O3 vertical SBD with self-aligned field plate and mesa termination" . | Applied Physics Letters 125 . 2 (2024) . |
| APA | Xu, Xiaorui , Deng, Yicong , Li, Titao , Chen, Duanyang , Wang, Fangzhou , Yu, Cheng et al. Over 2 GW/cm2 low-conduction loss Ga2O3 vertical SBD with self-aligned field plate and mesa termination . | Applied Physics Letters , 2024 , 125 (2) . |
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Significant advancements in artificial neural networks (ANNs) have driven the rapid progress of artificial intelligence and machine learning. While current feedforward neural networks primarily handle static data, recurrent neural networks (RNNs) are designed for dynamical systems. However, RNNs demand extensive training on specific tasks, limiting their scalability and affordability for edge computing. Physical reservoir computing (RC) offers an alternative approach by mapping inputs into high-dimensional states, allowing for pattern analysis within a fixed reservoir. Unlike RNNs, RC is well-suited for temporal and sequential data processing with rapid speed and low training costs. This makes RC suitable for hardware implementation across various research domains. Nonetheless, existing demonstrations of RC remain constrained to small-scale device arrays. As electronic synapse arrays aim to approach very large-scale and highly complex hardware as in the human brain, managing heat dissipation becomes a formidable challenge. In this work, we successfully developed the neuristors based on textured h-BN films, prepared using a CMOS-compatible technique, and constructed a physical RC system based on as-fabricated devices. Our approach leverages vertically aligned BN to provide aligned diffusion paths for the reproducible migration process of metal ions from the electrodes and offers a potential solution for thermal management in electronic devices. This achievement highlights the promising potential of our neuristors for future high-density and energy-efficient neuromorphic computing. © 2024 Elsevier B.V.
Keyword ：
Boron nitride Boron nitride Highly textured Highly textured High thermal conductivity High thermal conductivity Neuromorphic device Neuromorphic device Reservoir computing Reservoir computing
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| GB/T 7714 | Zhang, H. , Li, J. , Ju, X. et al. Highly textured CMOS-compatible hexagonal boron nitride-based neuristor for reservoir computing [J]. | Chemical Engineering Journal , 2024 , 498 . |
| MLA | Zhang, H. et al. "Highly textured CMOS-compatible hexagonal boron nitride-based neuristor for reservoir computing" . | Chemical Engineering Journal 498 (2024) . |
| APA | Zhang, H. , Li, J. , Ju, X. , Jiang, J. , Wu, J. , Chi, D. et al. Highly textured CMOS-compatible hexagonal boron nitride-based neuristor for reservoir computing . | Chemical Engineering Journal , 2024 , 498 . |
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High-performance electro-optic (EO) materials greatly enhance modulators and switches in various photonic applications. We investigate the evolution of the tolerance factor (t) and EO coefficient (rc) in A-site and B-site doped BaTiO3 (BT) thin films. Our analysis reveals that cation transmutation has a remarkable impact on their dielectric constant, spontaneous polarization, optical band gap, and EO coefficient. Notably, Pb-doped BT samples exhibit an even higher rc value of 336.5 pm/V, representing a nearly 60% increase compared to pure BT and approximately 11 times larger than that of LiNbO3. This substantial improvement in EO performance can be attributed to enhanced local structural heterogeneity resulting from cation dopants. Furthermore, infusing dopants in BT also result in good structural uniformity and reliable EO performances, regardless of temperature and frequency. Our study offers valuable insights into doping engineering for obtaining functional perovskite oxides, enabling the development of power-efficient, ultra-compact integrated nanophotonic devices.
Keyword ：
barium titanate barium titanate electro-optic electro-optic nanophotonic device nanophotonic device Pockels coefficient Pockels coefficient tolerance factor tolerance factor
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| GB/T 7714 | Zhu, Minmin , Zhang, Xianrong , Wei, Can et al. Chemical design of barium titanate thin films for nanophotonic devices [J]. | JOURNAL OF THE AMERICAN CERAMIC SOCIETY , 2024 , 107 (9) : 6263-6274 . |
| MLA | Zhu, Minmin et al. "Chemical design of barium titanate thin films for nanophotonic devices" . | JOURNAL OF THE AMERICAN CERAMIC SOCIETY 107 . 9 (2024) : 6263-6274 . |
| APA | Zhu, Minmin , Zhang, Xianrong , Wei, Can , Yi, Xiaoyuan , Yang, Dan , Zhang, Haizhong et al. Chemical design of barium titanate thin films for nanophotonic devices . | JOURNAL OF THE AMERICAN CERAMIC SOCIETY , 2024 , 107 (9) , 6263-6274 . |
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The next-generation computing system is required to perform 10(18) floating point operations per second to address the exponential growth of data from sensory terminals, driven by advancements in artificial intelligence and the Internet of Things. Even if a supercomputer possesses the capability to execute these operations, managing heat dissipation becomes a significant challenge when the electronic synapse array reaches a comparable scale with the human neuron network. One potential solution to address thermal hotspots in electronic devices is the use of vertically-aligned hexagonal boron nitride (h-BN) known for its high thermal conductivity. In this study, we have developed textured h-BN films using the high power impulse magnetron sputtering technique. The thermal conductivity of the oriented h-BN film is approximately 354% higher than that of the randomly oriented counterpart. By fabricating electronic synapses based on the textured h-BN thin film, we demonstrate various bio-synaptic plasticity in this device. Our results indicate that orientation engineering can effectively enable h-BN to function as a suitable self-heat dissipation layer, thereby paving the way for future wearable memory devices, solar cells, and neuromorphic devices.
Keyword ：
boron nitride boron nitride high thermal conductivity high thermal conductivity low-power memory low-power memory neuromorphic computing neuromorphic computing vertically-aligned vertically-aligned
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| GB/T 7714 | Zhang, Haizhong , Ju, Xin , Jiang, Haitao et al. Implementation of high thermal conductivity and synaptic metaplasticity in vertically-aligned hexagonal boron nitride-based memristor [J]. | SCIENCE CHINA-MATERIALS , 2024 , 67 (6) : 1907-1914 . |
| MLA | Zhang, Haizhong et al. "Implementation of high thermal conductivity and synaptic metaplasticity in vertically-aligned hexagonal boron nitride-based memristor" . | SCIENCE CHINA-MATERIALS 67 . 6 (2024) : 1907-1914 . |
| APA | Zhang, Haizhong , Ju, Xin , Jiang, Haitao , Yang, Dan , Wei, Rongshan , Hu, Wei et al. Implementation of high thermal conductivity and synaptic metaplasticity in vertically-aligned hexagonal boron nitride-based memristor . | SCIENCE CHINA-MATERIALS , 2024 , 67 (6) , 1907-1914 . |
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In this Letter, a high-quality and high-resistivity nitrogen (N)-doped Ga2O3 current blocking layer (CBL) is grown utilizing metal-organic chemical vapor deposition homoepitaxial technology. By using nitrous oxide (N2O) as oxygen source for Ga2O3 growth and N source for doping and controlling the growth temperature, the grown CBL can effectively achieve high (similar to 10(19) cm(-3)) or low (similar to 10(17) cm-3) N doping concentrations, as well as high crystal quality. Furthermore, the electrical properties of the developed CBL are verified at the device level, which shows that the device using the CBL can withstand bidirectional voltages exceeding 3.5 kV with very low leakage (<= 1 x 10(-4) A/cm2). This work can pave the way for the realization of high-voltage and low-leakage Ga2O3 vertical devices, especially metal-oxide-semiconductor field effect transistors.
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| GB/T 7714 | Xu, Xiaorui , Chen, Desen , Lu, Yaoping et al. Nitrogen-doped Ga2O3 current blocking layer using MOCVD homoepitaxy for high-voltage and low-leakage Ga2O3 vertical device fabrication [J]. | APPLIED PHYSICS LETTERS , 2024 , 125 (20) . |
| MLA | Xu, Xiaorui et al. "Nitrogen-doped Ga2O3 current blocking layer using MOCVD homoepitaxy for high-voltage and low-leakage Ga2O3 vertical device fabrication" . | APPLIED PHYSICS LETTERS 125 . 20 (2024) . |
| APA | Xu, Xiaorui , Chen, Desen , Lu, Yaoping , Li, Titao , Han, Xueli , Chen, Duanyang et al. Nitrogen-doped Ga2O3 current blocking layer using MOCVD homoepitaxy for high-voltage and low-leakage Ga2O3 vertical device fabrication . | APPLIED PHYSICS LETTERS , 2024 , 125 (20) . |
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