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学者姓名：朱敏敏
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Abstract ：
氧化镓(Ga2O3)作为一种新型的超宽禁带半导体材料,具有高达4.8 eV的禁带宽度和8 MV/cm的临界击穿场强,这一特点很好地匹配了功率器件的性能要求.但是由于氧化镓的p型掺杂技术的缺失,氧化镓同质结器件的实现较为困难.基于此,本文提出采用p-NiO/n-Ga2O3异质结所构成的结势垒肖特基二极管(Junction Barrier Schottky,JBS),并与场板(Field Plate,FP)及阶梯型终端(Mase)进行复合,以提升其性能.为了对器件设计及制备提供理论指导,应用TCAD仿真软件对其进行了仿真研究.研究发现,与基础肖特基二极管(Schottky Barrier Diode,SBD)相比,采用复合终端的SBD的击穿电压由887 V增加至3 069 V,同时正向导通电阻由3.975 mΩ·cm2略微增加至5.395 mΩ·cm2.此外,本文探讨了 p-NiO掺杂浓度和厚度对器件性能的影响.结果证明,复合终端结构有效改善了器件的反向击穿性能,并且为器件性能的优化提供了理论指导.
Keyword ：
Ga2O3-SBD Ga2O3-SBD 击穿电压 击穿电压 复合终端结构 复合终端结构 异质结 异质结
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| GB/T 7714 | 马豪威 , 朱敏敏 . 复合终端下n-Ga2O3异质肖特基二极管的结构设计及优化 [J]. | 功能材料与器件学报 , 2025 , 31 (1) : 56-63 . |
| MLA | 马豪威 等. "复合终端下n-Ga2O3异质肖特基二极管的结构设计及优化" . | 功能材料与器件学报 31 . 1 (2025) : 56-63 . |
| APA | 马豪威 , 朱敏敏 . 复合终端下n-Ga2O3异质肖特基二极管的结构设计及优化 . | 功能材料与器件学报 , 2025 , 31 (1) , 56-63 . |
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Abstract ：
氧化镓（Ga
Keyword ：
Ga Ga
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| GB/T 7714 | 马豪威 , 朱敏敏 . 复合终端下n-Ga [J]. | 功能材料与器件学报 , 2025 , 31 (01) : 56-63 . |
| MLA | 马豪威 等. "复合终端下n-Ga" . | 功能材料与器件学报 31 . 01 (2025) : 56-63 . |
| APA | 马豪威 , 朱敏敏 . 复合终端下n-Ga . | 功能材料与器件学报 , 2025 , 31 (01) , 56-63 . |
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In the semiconductor wafer manufacturing process, it is necessary to inspect the electrical parameters and functions of the wafer to identify the defects in the chip manufacturing process. The inspection results are presented in the form of wafers; therefore, the accuracy of wafer defect recognition directly affects the chip yield. Traditional manual methods suffer from subjectivity, inefficiency, and diminished accuracy. With improvements in computing power, computer vision based on convolutional neural networks has demonstrated notable advantages in defect recognition. Nonetheless, with the development of Moore's law and the continuous increase in wafer size, it continues to contend with challenges regarding the accurate identification of mixed, complex types of wafer defects and necessitates distinct training for each defect type, a process that is both laborious and time-intensive. In this study, we introduce a new deep learning model called the Deep Attention Pyramid Network (DAP-Net), which is based on depth-wise separable convolution and combines an improved coordinate attention mechanism with a multi-scale convolution structure to identify single and mixed types of wafer defects. Our model achieved an impressive recognition accuracy of 98.6% when evaluated on a mixed-type defect dataset (Mixed38WM), surpassing the performance of most previously reported deep learning models.
Keyword ：
Accuracy Accuracy Attention mechanisms Attention mechanisms Convolution Convolution Deep learning Deep learning Feature extraction Feature extraction improved coordinates attention mechanism improved coordinates attention mechanism Kernel Kernel lightweight network lightweight network Manufacturing Manufacturing Manufacturing processes Manufacturing processes multi-scale feature extraction multi-scale feature extraction Production Production Semiconductor device modeling Semiconductor device modeling wafer defect inspection wafer defect inspection
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| GB/T 7714 | He, Hao , Wei, Yuanjie , Lin, Xionghao et al. Semiconductor Wafer Defect Recognition Based on Improved Coordinate Attention Mechanism [J]. | IEEE ACCESS , 2025 , 13 : 46856-46864 . |
| MLA | He, Hao et al. "Semiconductor Wafer Defect Recognition Based on Improved Coordinate Attention Mechanism" . | IEEE ACCESS 13 (2025) : 46856-46864 . |
| APA | He, Hao , Wei, Yuanjie , Lin, Xionghao , Zhu, Minmin , Zhang, Haizhong . Semiconductor Wafer Defect Recognition Based on Improved Coordinate Attention Mechanism . | IEEE ACCESS , 2025 , 13 , 46856-46864 . |
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Aluminum alloys are renowned for their lightweight nature, resistance to oxidation, and impressive mechanical properties. Despite these advantages, their mechanical performance deteriorates significantly in extreme environments. Herein, we present an innovative solution by developing aluminum matrix composites (AMCs) that incorporate 3D printed alumina ceramic lattices. Our investigation demonstrates a remarkable 112.4 % increase in the strength of AMCs compared to pure aluminum, with a concurrent 54.8 % improvement in modulus under identical conditions. Additionally, as the volume fraction of the ceramic lattice varies from 0.21 to 0.45, the modulus of AMCs exhibits a noteworthy increase, ranging from 96.2 to 106.5 GPa, surpassing that of pure aluminum (68.8 GPa). Notably, even at temperatures of up to 300 degrees C, the strength of the Al2O3-Al composite matrix remains stable at 477.3 MPa. X-ray computed tomography analysis elucidates that the structural integrity of these composites predominantly relies on the load-bearing capacity of the ceramic lattices, complemented by the damping effect provided by the aluminum matrix. This innovative approach not only paves the way for scalable production of high-strength metal alloys in the industrial sector but also holds promise for substantial economic opportunities in the near future.
Keyword ：
Alumina lattice Alumina lattice Aluminum matrix composites Aluminum matrix composites Stereolithography 3D printing Stereolithography 3D printing Strength Strength X-ray computed tomography X-ray computed tomography
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| GB/T 7714 | Zhu, Minmin , Deng, Caozhuang , Zhang, Zhanfeng et al. Stereolithography 3D printing ceramics for ultrahigh strength aluminum matrix composites [J]. | JOURNAL OF MANUFACTURING PROCESSES , 2025 , 139 : 126-132 . |
| MLA | Zhu, Minmin et al. "Stereolithography 3D printing ceramics for ultrahigh strength aluminum matrix composites" . | JOURNAL OF MANUFACTURING PROCESSES 139 (2025) : 126-132 . |
| APA | Zhu, Minmin , Deng, Caozhuang , Zhang, Zhanfeng , Yang, Dan , Zhang, Haizhong , Wang, Linghua et al. Stereolithography 3D printing ceramics for ultrahigh strength aluminum matrix composites . | JOURNAL OF MANUFACTURING PROCESSES , 2025 , 139 , 126-132 . |
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The unclear p-type conduction mechanism and lack of reliable p-type Ga2O3 severely hinder Ga2O3-based high-voltage electronics. Here, we demonstrate in situ nitrogen (N) doping via metal-organic chemical vapor deposition homoepitaxy using N2O as oxygen source and acceptor dopant. Structural and compositional analyses confirm efficient N incorporation (favored by N-Ga bonding) compensating residual Si/H donors without compromising crystallinity. The Ga2O3:N epilayers achieve excellent p-type performance: 1.04 x 1018 cm-3 hole concentration, 0.47 cm2 V-1 s-1 mobility at room temperature, and 0.168 eV activation energy. A completely new insight into the p-type conduction mechanism in Ga2O3 is introduced, focusing on the crystallographic visualization of acceptors (N2-) and holes (O-), as well as the hole excitation process. It is suggested that careful suppression of the donor compensation effect and precise control of the N chemical potential, which leads to the fabrication of trace O- species solid-dissolved within Ga2O3, are essential for achieving high-hole-concentration p-type conduction in oxides.
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| GB/T 7714 | Lu, Yaoping , Jia, Lemin , Chen, Duanyang et al. Insight into the High Hole Concentration of p-Type Ga2O3 via In Situ Nitrogen Doping [J]. | JOURNAL OF PHYSICAL CHEMISTRY LETTERS , 2025 , 16 (17) : 4243-4251 . |
| MLA | Lu, Yaoping et al. "Insight into the High Hole Concentration of p-Type Ga2O3 via In Situ Nitrogen Doping" . | JOURNAL OF PHYSICAL CHEMISTRY LETTERS 16 . 17 (2025) : 4243-4251 . |
| APA | Lu, Yaoping , Jia, Lemin , Chen, Duanyang , Li, Titao , Qi, Hongji , Xu, Xiaorui et al. Insight into the High Hole Concentration of p-Type Ga2O3 via In Situ Nitrogen Doping . | JOURNAL OF PHYSICAL CHEMISTRY LETTERS , 2025 , 16 (17) , 4243-4251 . |
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Optimized inductively coupled plasma (ICP) etching process can improve the surface quality of (1-Ga2O3 thin film to enhance the power figure of merit of (1-Ga2O3 Schottky barrier diodes (SBDs). However, the mechanism of surface quality improvement of ICP etching is not yet clear. In this letter, we verified that the surface qualities of (1-Ga2O3 SBDs could be modified by varying the ratios of BCl3 and Ar etching plasmas. Moreover, electrical performance tests were conducted to verify that the improved surface quality can enhance the electrical properties. Benefitted from the high surface quality of (1-Ga2O3 epitaxial layer, the (1-Ga2O3 SBD without termination structure exhibits a low specific on-resistance (Ron,sp) of 4 m Omega & sdot;cm2 and high breakdown voltage (BV) of 1500 V. These results can pave the way for the preparation of high-performance (1-Ga2O3 power SBDs.
Keyword ：
Beta-phase gallium oxide Beta-phase gallium oxide Inductively coupled plasma etching Inductively coupled plasma etching Schottky barrier diode Schottky barrier diode Surface quality Surface quality
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| GB/T 7714 | Deng, Yicong , Chen, Desen , Li, Titao et al. Surface quality improvement mechanism of ICP etching for Ga2O3 Schottky barrier diode [J]. | MICRO AND NANOSTRUCTURES , 2025 , 199 . |
| MLA | Deng, Yicong et al. "Surface quality improvement mechanism of ICP etching for Ga2O3 Schottky barrier diode" . | MICRO AND NANOSTRUCTURES 199 (2025) . |
| APA | Deng, Yicong , Chen, Desen , Li, Titao , Zhu, Minmin , Xu, Xiaorui , Zhang, Haizhong et al. Surface quality improvement mechanism of ICP etching for Ga2O3 Schottky barrier diode . | MICRO AND NANOSTRUCTURES , 2025 , 199 . |
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Solar-blind ultraviolet photodetectors (SBUV-PDs) are utilized in various military and civilian fields, encompassing missile tracking, high-voltage detection, and fire warning systems. Ga2O3 emerges as the prime candidate for such PDs owing to its elevated bandgap, remarkable thermal stability, and facile fabrication process. The metal-semiconductor-metal (MSM) structure garners attention for its swift response time and straightforward preparation, thus becoming a focal point among diverse PD architectures. Nevertheless, the metal surface impedes optical absorption, thereby diminishing the quantum efficiency of the PD. In this work, we introduce a nanograting onto the Ga2O3 surface, which results in a 747-fold increase in responsivity in the SBUV region compared to a normal MSM grating-free structure. Metal gratings can induce surface plasmon polaritons (SPP), thereby augmenting the optical absorption of the PD and stimulating hot electrons to increase photocurrent. However, the broadband response caused by the introduction of metal gratings is a common problem. By optimizing the doping concentration of the Ga2O3 absorption layer, adjusting the incident light intensity, and reverse voltage, the problem of broadband response has been solved. The responsivity of the device in the non-SBUV region is suppressed 24-fold. This methodology holds promise as a reliable approach for fabricating high-performance SBUV-PDs.
Keyword ：
Ga2O3 Ga2O3 metal-semiconductor-metal (MSM) metal-semiconductor-metal (MSM) nanograting nanograting photodetector (PD) photodetector (PD) plasmon plasmon responsivity responsivity
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| GB/T 7714 | Li, Jialong , Yang, Dan , Lu, Xiaoqiang et al. Enhancing Ga2O3 Solar-Blind Photodetectors via Metal Nanogratings [J]. | IEEE SENSORS JOURNAL , 2025 , 25 (1) : 434-442 . |
| MLA | Li, Jialong et al. "Enhancing Ga2O3 Solar-Blind Photodetectors via Metal Nanogratings" . | IEEE SENSORS JOURNAL 25 . 1 (2025) : 434-442 . |
| APA | Li, Jialong , Yang, Dan , Lu, Xiaoqiang , Zhang, Haizhong , Zhu, Minmin . Enhancing Ga2O3 Solar-Blind Photodetectors via Metal Nanogratings . | IEEE SENSORS JOURNAL , 2025 , 25 (1) , 434-442 . |
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Poly(vinylidene fluoride) (PVDF)-based piezoelectric materials have emerged as a transformative platform in tissue engineering due to their unique ability to mimic endogenous bioelectric signals, which play pivotal roles in cellular behaviors, such as proliferation, differentiation, and tissue regeneration. This review comprehensively explores the structural polymorphism, processing techniques, and electromechanical properties of PVDF and its copolymers, emphasizing their superior piezoelectric coefficients, biocompatibility, and adaptability to diverse fabrication methods. The intrinsic piezoelectricity of PVDF, driven by its polar beta-phase, enables dynamic responses to mechanical stimuli, such as physiological movements or external forces, generating localized electrical potentials that modulate critical signaling pathways to enhance tissue repair. Applications span multiple organs: in bone regeneration, PVDF scaffolds promote osteogenesis through mechanoelectrical coupling; in neural engineering, they facilitate axonal growth and myelination; in cardiac repair, they synchronize cardiomyocyte contraction; and in skin healing, they accelerate re-epithelialization and angiogenesis. Despite these advances, challenges persist, including optimizing piezoelectric output, ensuring long-term biocompatibility, and achieving controlled biodegradability. Future directions highlight the integration of PVDF with smart functionalities and the exploration of organ-specific signaling mechanisms to advance clinical translation. This work underscores the potential of PVDF-based materials as multifunctional platforms for next-generation regenerative therapies.
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| GB/T 7714 | Li, Yuejun , Zhuang, Jiachang , Zhao, Shouliang et al. Organ synergy in poly(vinylidene fluoride)-based piezoelectrical materials for tissue engineering [J]. | APPLIED PHYSICS REVIEWS , 2025 , 12 (2) . |
| MLA | Li, Yuejun et al. "Organ synergy in poly(vinylidene fluoride)-based piezoelectrical materials for tissue engineering" . | APPLIED PHYSICS REVIEWS 12 . 2 (2025) . |
| APA | Li, Yuejun , Zhuang, Jiachang , Zhao, Shouliang , Zhu, Minmin , Xie, Han . Organ synergy in poly(vinylidene fluoride)-based piezoelectrical materials for tissue engineering . | APPLIED PHYSICS REVIEWS , 2025 , 12 (2) . |
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Three-dimensional (3D) thermally conductive boron nitride (BN)/polymer composites show significant potential in the field of thermal management. This review surveys current advances and discusses the thermal conductivity mechanisms of BN/polymer composites and the critical factors influencing their performance. A thorough introduction to the construction methods of 3D thermally conductive BN/polymer composites is provided, along with an objective discussion of their advantages and disadvantages. Notably, this review specifically highlights the effects of 3D thermally conductive networks on phonon transmission, interfacial thermal resistance, and thermal conductivity, as well as their interactions, and points out recent innovative trends in constructing 3D thermal composites by integrating BN with other dimensional fillers (0D, 1D, and 2D fillers). These approaches demonstrate promising strategies for optimizing thermal management by leveraging the unique advantages of each dimensional filler. The review concludes with a summary and outlook on the development of 3D thermally conductive BN/polymer composites. This aims to provide theoretical analysis, advance practical applications, and enhance next-generation thermal management systems.
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| GB/T 7714 | Liu, Guang , Xu, Pingfan , Luo, Zhongzhen et al. Dimensional synergy in 3D thermally conductive boron nitride/polymer composites [J]. | APPLIED PHYSICS REVIEWS , 2025 , 12 (2) . |
| MLA | Liu, Guang et al. "Dimensional synergy in 3D thermally conductive boron nitride/polymer composites" . | APPLIED PHYSICS REVIEWS 12 . 2 (2025) . |
| APA | Liu, Guang , Xu, Pingfan , Luo, Zhongzhen , Zhang, Li , Luo, Yaofa , Zhang, Peikun et al. Dimensional synergy in 3D thermally conductive boron nitride/polymer composites . | APPLIED PHYSICS REVIEWS , 2025 , 12 (2) . |
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High-entropy materials (HEMs) have attracted considerable research attention in battery applications due to exceptional properties such as remarkable structural stability, enhanced ionic conductivity, superior mechanical strength, and outstanding catalytic activity. These distinctive characteristics render HEMs highly suitable for various battery components, such as electrodes, electrolytes, and catalysts. This review systematically examines recent advances in the application of HEMs for energy storage, beginning with fundamental concepts, historical development, and key definitions. Three principal categories of HEMs, namely high-entropy alloys, high-entropy oxides, and high-entropy MXenes, are analyzed with a focus on electrochemical performance metrics such as specific capacity, energy density, cycling stability, and rate capability. The underlying mechanisms by which these materials enhance battery performance are elucidated in the discussion. Furthermore, the pivotal role of machine learning in accelerating the discovery and optimization of novel high-entropy battery materials is highlighted. The review concludes by outlining future research directions and potential breakthroughs in HEM-based battery technologies.
Keyword ：
High entropy alloys High entropy alloys High entropy battery materials High entropy battery materials High entropy MXenes High entropy MXenes High entropy oxides High entropy oxides Machine learning Machine learning
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| GB/T 7714 | Xin, Yangmei , Zhu, Minmin , Zhang, Haizhong et al. High-Entropy Materials: A New Paradigm in the Design of Advanced Batteries [J]. | NANO-MICRO LETTERS , 2025 , 18 (1) . |
| MLA | Xin, Yangmei et al. "High-Entropy Materials: A New Paradigm in the Design of Advanced Batteries" . | NANO-MICRO LETTERS 18 . 1 (2025) . |
| APA | Xin, Yangmei , Zhu, Minmin , Zhang, Haizhong , Wang, Xinghui . High-Entropy Materials: A New Paradigm in the Design of Advanced Batteries . | NANO-MICRO LETTERS , 2025 , 18 (1) . |
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