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学者姓名：裴家杰
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Abstract ：
Valleytronics, utilizing the valley degree of freedom in electrons, has potential for advancing the next-generation nonvolatile storage. However, practical implementation remains challenging due to the limited control over valleytronic properties. Here, we propose ferroelectric HfCl2/Sc2CO2 van der Waals heterostructure as a platform to overcome these limitations, enabling tunable and nonvolatile valleytronic behaviors. Our findings show that the electric polarization state of the Sc2CO2 monolayer governs the electronic properties of heterostructures. Positive polarization induces a direct gap at the valleys, enabling valleytronic functionality for excitation and readout via circularly polarized light, while negative polarization results in an indirect-gap, suppressing valleytronic behavior. Moreover, our transport simulations further demonstrate a polarization-dependent ferroelectric p-i-n junction with 8 nm possesses a maximum tunnel electroresistance (TER) ratio of 1.60 x 10(8)% at a bias of 0.5 eV. These results provide insights into ferroelectric-controlled valleytronic transitions and position the HfCl2/Sc2CO2 heterostructure as a promising candidate for energy-efficient valleytronic memory and nonvolatile storage applications.
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| GB/T 7714 | Cui, Zhou , Duan, Xunkai , Wen, Jiansen et al. Ferroelectric control of valleytronic nonvolatile storage in HfCl2/Sc2CO2 heterostructure [J]. | APPLIED PHYSICS LETTERS , 2025 , 126 (12) . |
| MLA | Cui, Zhou et al. "Ferroelectric control of valleytronic nonvolatile storage in HfCl2/Sc2CO2 heterostructure" . | APPLIED PHYSICS LETTERS 126 . 12 (2025) . |
| APA | Cui, Zhou , Duan, Xunkai , Wen, Jiansen , Zhu, Ziye , Zhang, Jiayong , Pei, Jiajie et al. Ferroelectric control of valleytronic nonvolatile storage in HfCl2/Sc2CO2 heterostructure . | APPLIED PHYSICS LETTERS , 2025 , 126 (12) . |
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2D materials exhibit unique properties for next-generation electronics and quantum devices. However, their sensitivity to temperature variations, particularly concerning cooling-induced strain, remains underexplored systematically. This study investigates the effects of cooling-induced strain on monolayer MoSe2 at cryogenic temperatures. It is emphasized that the mismatch in thermal expansion coefficients between the material and bulk substrate leads to significant external strain, which superimposes the internal strain of the material. By engineering the material-substrate 2D-bulk interface, the resulting strain conditions are characterized and reveal that substantial compressive strain induces new emission features linked to direct-to-indirect bandgap transition, as confirmed by photoluminescence and transient absorption spectroscopy studies. Finally, it is demonstrated that encapsulation with hexagonal boron nitride can mitigate the external strain by 2D-2D interfaces, achieving results similar to those of suspended samples. The findings address key challenges in quantifying and characterizing strain types across different 2D-bulk interfaces, distinguishing cooling-induced strain effects from other temperature-dependent phenomena, and designing strain-sensitive 2D material devices for extreme temperature conditions.
Keyword ：
2D materials 2D materials cooling cooling interface engineering interface engineering strain strain thermal expansion coefficients thermal expansion coefficients
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| GB/T 7714 | Yang, Shichao , Liang, Xiaoxin , Chen, Wenwei et al. Cooling-induced Strains in 2D Materials and Their Modulation via Interface Engineering [J]. | ADVANCED MATERIALS , 2025 , 37 (15) . |
| MLA | Yang, Shichao et al. "Cooling-induced Strains in 2D Materials and Their Modulation via Interface Engineering" . | ADVANCED MATERIALS 37 . 15 (2025) . |
| APA | Yang, Shichao , Liang, Xiaoxin , Chen, Wenwei , Wang, Qiuyan , Sa, Baisheng , Guo, Zhiyong et al. Cooling-induced Strains in 2D Materials and Their Modulation via Interface Engineering . | ADVANCED MATERIALS , 2025 , 37 (15) . |
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The rapid advancement of neuromorphic computing and machine vision drives the need for optoelectronic memories that mimic neural and visual systems, integrating optical sensing, data storage, and processing. Traditional fabrication methods are often complex, multistep processes that struggle to achieve lightweight, scalable, and flexible designs. This limitation highlights the need for alternative approaches like printing technologies to enable flexible optoelectronic memory development. Here, a novel approach is presented to print optoelectronic memories using graphene (Gr)/WS2 nanostructured composite ink. This composite ink utilizes Gr nanosheets as conductive channels and defect sites in WS2 as charge capture centers, forming local heterojunctions that enable efficient photoelectric storage. Two types of Gr/WS2 composite inks are developed, tested, and compared with pure Gr ink. The findings reveal that the Gr/WS2 nanocomposite ink with enhanced edge states exhibits superior memory performance. Devices print using this ink demonstrated the ability to store visual information in both single-pulse and multi-pulse modes, reflecting potential applications in retina-inspired visual persistence and neuromorphic computing. This work highlights the promise of printed 2D material-based optoelectronic memories for advancing scalable, low-cost, and flexible electronic devices.
Keyword ：
graphene graphene optoelectronic memories optoelectronic memories printing inks printing inks vision persistence vision persistence WS2 nanostructures WS2 nanostructures
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| GB/T 7714 | Bai, Jiahui , Wang, Qiuyan , Zheng, Qiaoqiao et al. Printed Optoelectronic Memories Using Gr/WS2 Nanostructured Composite Ink for Retina-Inspired Vision Persistent Synapses [J]. | ADVANCED ELECTRONIC MATERIALS , 2025 , 11 (8) . |
| MLA | Bai, Jiahui et al. "Printed Optoelectronic Memories Using Gr/WS2 Nanostructured Composite Ink for Retina-Inspired Vision Persistent Synapses" . | ADVANCED ELECTRONIC MATERIALS 11 . 8 (2025) . |
| APA | Bai, Jiahui , Wang, Qiuyan , Zheng, Qiaoqiao , Liu, Dong , Zhan, Hongbing , Xu, Renjing et al. Printed Optoelectronic Memories Using Gr/WS2 Nanostructured Composite Ink for Retina-Inspired Vision Persistent Synapses . | ADVANCED ELECTRONIC MATERIALS , 2025 , 11 (8) . |
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Moire superlattices enable the modification of electronic band structures and material properties by tuning interlayer couplings, holding great potential for designing multifunctional optoelectronic devices in color tuning, light harvesting, and light generation. While theoretical predictions suggest that moire potentials can control interlayer couplings in heterostructures, experimental realizations remain challenging due to difficulties in dynamically manipulating moire potentials. Here we systematically modify interlayer couplings in a WS2/MoS2 heterobilayer by adjusting the excitation power and gate voltage to control moire potentials. Increasing excitation power reduces the effective moire potentials by influencing the filling of moire traps, which suppress interlayer charge transfers and the p-doping effect on the WS2 from the heterostructure. Additionally, power-dependent PL measurements at varying gate voltages demonstrate a prominent decrease in the heterostructure's sublinear slope, from 0.63 (no voltage) to 0.52 (V G = 50 V), indicating enhanced moire localization effects. This observation is verified by theoretical simulations of gate-tuned moire potentials.
Keyword ：
electricalcontrol electricalcontrol Interlayer coupling Interlayer coupling moire potential moire potential moire superlattices moire superlattices twist angle twist angle
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| GB/T 7714 | Zhang, Linglong , Rafique, Masab , Kang, Jian et al. Moire Engineering of Interlayer Coupling in WS2/MoS2 Monolayers [J]. | NANO LETTERS , 2025 , 25 (24) : 9662-9669 . |
| MLA | Zhang, Linglong et al. "Moire Engineering of Interlayer Coupling in WS2/MoS2 Monolayers" . | NANO LETTERS 25 . 24 (2025) : 9662-9669 . |
| APA | Zhang, Linglong , Rafique, Masab , Kang, Jian , Hu, Zhenliang , Ji, Mengfei , Sun, Xueqian et al. Moire Engineering of Interlayer Coupling in WS2/MoS2 Monolayers . | NANO LETTERS , 2025 , 25 (24) , 9662-9669 . |
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van der Waals (vdW) superlattices, comprising different 2D materials aligned alternately by weak interlayer interactions, offer versatile structures for the fabrication of novel semiconductor devices. Despite their potential, the precise control of optoelectronic properties with interlayer interactions remains challenging. Here, we investigate the discrepancies between the SnS/TiS2 superlattice (SnTiS3) and its subsystems by comprehensive characterization and DFT calculations. The disappearance of certain Raman modes suggests that the interactions alter the SnS subsystem structure. Specifically, such structural changes transform the band structure from indirect to direct band gap, causing a strong PL emission (similar to 2.18 eV) in SnTiS3. In addition, the modulation of the optoelectronic properties ultimately leads to the unique phenomenon of thermally activated photoluminescence. This phenomenon is attributed to the inhibition of charge transfer induced by tunable intralayer strains. Our findings extend the understanding of the mechanism of interlayer interactions in van der Waals superlattices and provide insights into the design of high-temperature optoelectronic devices.
Keyword ：
interlayer interactions interlayer interactions photoluminescence photoluminescence SnTiS3 SnTiS3 temperature-dependent temperature-dependent van der Waals heterostructures van der Waals heterostructures
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| GB/T 7714 | Huang, Siting , Bai, Jiahui , Long, Hanyan et al. Thermally Activated Photoluminescence Induced by Tunable Interlayer Interactions in Naturally Occurring van der Waals Superlattice SnS/TiS2 [J]. | NANO LETTERS , 2024 , 24 (20) : 6061-6068 . |
| MLA | Huang, Siting et al. "Thermally Activated Photoluminescence Induced by Tunable Interlayer Interactions in Naturally Occurring van der Waals Superlattice SnS/TiS2" . | NANO LETTERS 24 . 20 (2024) : 6061-6068 . |
| APA | Huang, Siting , Bai, Jiahui , Long, Hanyan , Yang, Shichao , Chen, Wenwei , Wang, Qiuyan et al. Thermally Activated Photoluminescence Induced by Tunable Interlayer Interactions in Naturally Occurring van der Waals Superlattice SnS/TiS2 . | NANO LETTERS , 2024 , 24 (20) , 6061-6068 . |
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2D transition metal dichalcogenides (TMDs) have emerged as a novel class of semiconductors with promising applications in optoelectronics, owing to their rich and tunable valley fine structure, known as valleytronics. Strain engineering in TMDs presents opportunities to tailor their valley fine structures and band alignment, which greatly expands the potential to investigate their intrinsic properties and improve device performance, thus opening a new field of straintronics. In this review, recent advances in strain-engineered 2D TMDs are summarized, with a focus on new phenomena and applications enabled by precision tuning of valley physics. The underlying mechanisms and connections are delineated between strain-induced modifications to the valley fine structures based on intravalley, intervalley, and interlayer band alignment in single and heterostructure TMDs. These insights allow targeted strain control strategies to be devised for optimizing optoelectronic characteristics. This review provides perspectives and guidance on the future directions of valley-straintronics and flexible 2D optoelectronics using TMDs, highlighting the substantial promise of valley-strain engineering in TMDs for fundamental valley physics studies as well as practical device applications. Presenting a comprehensive review on recent advancements in strain-engineered 2D transition metal dichalcogenides (TMDs). This review delves into precision tuning of valley physics through strain engineering, elucidating mechanisms and connections between strain-induced modifications and optoelectronic characteristics. It offers insights into future directions of valley-straintronics, underscoring the significant promise of valley-strain engineering in TMDs for fundamental studies and practical applications. image
Keyword ：
2D semiconductors 2D semiconductors straintronics straintronics transition metal dichalcogenides transition metal dichalcogenides valley fine structure valley fine structure valleytronics valleytronics
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| GB/T 7714 | Yang, Shichao , Long, Hanyan , Chen, Wenwei et al. Valleytronics Meets Straintronics: Valley Fine Structure Engineering of 2D Transition Metal Dichalcogenides [J]. | ADVANCED OPTICAL MATERIALS , 2024 , 12 (14) . |
| MLA | Yang, Shichao et al. "Valleytronics Meets Straintronics: Valley Fine Structure Engineering of 2D Transition Metal Dichalcogenides" . | ADVANCED OPTICAL MATERIALS 12 . 14 (2024) . |
| APA | Yang, Shichao , Long, Hanyan , Chen, Wenwei , Sa, Baisheng , Guo, Zhiyong , Zheng, Jingying et al. Valleytronics Meets Straintronics: Valley Fine Structure Engineering of 2D Transition Metal Dichalcogenides . | ADVANCED OPTICAL MATERIALS , 2024 , 12 (14) . |
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Developing alternative two-dimensional (2D) metallic/semiconducting (M/S) van der Waals heterostructures (vdWHs) along with an understanding of interfacial photocarrier behavior is crucial for designing high-performance optoelectronic devices. Here, we comprehensively explored the photophysical model of photocarrier generation and interfacial transfer in as-grown 2D 1T '/2H MoS2 vdWHs using various spectroscopic characterizations. We demonstrated the transitions of activated photocarrier transfer trajectories by tuning the pump photon energies across the 2H MoS2 bandgap. The importance of confined bilayer transfer systems and strong interlayer coupling at vdW interfaces for transfer efficiency was elucidated. Additionally, the fluorophlogopite substrate was found to be an external method for regulating photocarrier generation in individual 2H layers through the p-doping effect at the substrate-2H layer interfaces, and this influence was alleviated after introducing the 2H-1T ' vdW interface. Particularly, 1T ' MoS2 as a broadband hot carrier absorber enabled the ultrafast (similar to 133 fs) injection and extraction of energetic hot carriers into the 2H layer via a photothermionic emission mechanism, achieving a high efficiency of similar to 41% under 900 nm photoexcitation at room temperature. Our work offers fundamental insights into the complex interfacial carrier photophysics in 2D M/S vdWHs, providing a way of constructing advanced multifunctional devices by using these emerging materials as active components and interface engineering.
Keyword ：
1T '/2H MoS2 heterobilayers 1T '/2H MoS2 heterobilayers 2D materials 2D materials fluorophlogopite substrate fluorophlogopite substrate interface engineering interface engineering photocarrier transfer photocarrier transfer
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| GB/T 7714 | Dong, Junhao , Wu, Zhanggui , Huangfu, Changan et al. Interface Engineering for Efficient Photocarrier Generation and Transfer in Strongly Coupled Metallic/Semiconducting 1T′/2H MoS2 Heterobilayers [J]. | ACS NANO , 2024 , 18 (47) : 32868-32877 . |
| MLA | Dong, Junhao et al. "Interface Engineering for Efficient Photocarrier Generation and Transfer in Strongly Coupled Metallic/Semiconducting 1T′/2H MoS2 Heterobilayers" . | ACS NANO 18 . 47 (2024) : 32868-32877 . |
| APA | Dong, Junhao , Wu, Zhanggui , Huangfu, Changan , Su, Yi , Zheng, Xiaoyan , Wu, Wensheng et al. Interface Engineering for Efficient Photocarrier Generation and Transfer in Strongly Coupled Metallic/Semiconducting 1T′/2H MoS2 Heterobilayers . | ACS NANO , 2024 , 18 (47) , 32868-32877 . |
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A series of two-dimensional polyimide covalent organic frameworks (2D COF) based on core-substituted naphthalene diimides (cNDIs) were designed and synthesized with the characteristic of tunable bandgap without global structural changes. Cyclic voltammetry (CV) and DFT calculations indicated that COFcNDI-OEt and COF(cNDI-SEt )possess higher HOMO/LUMO levels and narrower bandgaps than COFNDI-H. Further investigation indicated that the COF bandgaps are not only related to the electron-donating substituents but also varied with respect to the interlayer distances. Moreover, the femtosecond transient absorption (TA) spectra manifested that the electron donor substituents are beneficial to the charge delocalization in the pi-columnar unit, resulting in a longer lifetime of charge recombination, which is one of the pivotal prerequisites for high-performance solar cells and photocatalysis.
Keyword ：
carrier dynamics carrier dynamics covalent organic frameworks covalent organic frameworks naphthalenediimides naphthalenediimides polyimide polyimide substituent effect substituent effect
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| GB/T 7714 | Luo, Yafang , Chang, Zhen , Pei, Jiajie et al. Design, Synthesis, and Ultrafast Carrier Dynamics of Core-Substituted Naphthalene Diimide-Based Covalent Organic Frameworks [J]. | NANO LETTERS , 2023 , 23 (20) : 9266-9271 . |
| MLA | Luo, Yafang et al. "Design, Synthesis, and Ultrafast Carrier Dynamics of Core-Substituted Naphthalene Diimide-Based Covalent Organic Frameworks" . | NANO LETTERS 23 . 20 (2023) : 9266-9271 . |
| APA | Luo, Yafang , Chang, Zhen , Pei, Jiajie , Guo, Zhiyong , Zhan, Hongbing . Design, Synthesis, and Ultrafast Carrier Dynamics of Core-Substituted Naphthalene Diimide-Based Covalent Organic Frameworks . | NANO LETTERS , 2023 , 23 (20) , 9266-9271 . |
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This chapter presents an overview of the concept of “valleys” in semiconductor physics, which refers to local minima in the energy bands of certain semiconductors. These energy bands are crucial for determining the electronic and optical properties of the material. Specifically, some semiconductor crystals, like transition metal dichalcogenides (TMDs), exhibit multiple valleys with varying energies, resulting in distinct effective masses and pseudospins for charge carriers. The focus of the chapter is on valley excitonic states that arise from strong interactions between electrons and holes in different valleys. These interactions, along with additional carriers in the electronic band structure, lead to the formation of valley many-body complexes, including intervalley trions, biexcitons, and charged biexcitons. The formation processes, energy valley configurations, fluorescence and absorption peak positions, and changes in polarization characteristics of various valley excitonic states in TMDs under external fields are explored and summarized in this chapter. These complexes possess diverse optical and electronic properties, making them promising for applications in optoelectronics, quantum information processing, and valleytronics. Additionally, recently discovered moiré exciton states and their relationship with energy valleys in momentum space are discussed. However, research on polarization characteristics in these states is in its early stages, necessitating further exploration. © 2023
Keyword ：
Excitonic states Excitonic states Many-body complexes Many-body complexes Optoelectronic properties Optoelectronic properties Transition metal dichalcogenides (TMDs) Transition metal dichalcogenides (TMDs) Valleys Valleys
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| GB/T 7714 | Pei, J. , Xu, R. . Valley excitons and their many-body complexes [未知]. |
| MLA | Pei, J. et al. "Valley excitons and their many-body complexes" [未知]. |
| APA | Pei, J. , Xu, R. . Valley excitons and their many-body complexes [未知]. |
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Two-dimensional (2D) transition metal chalcogenides (TMDs) are regarded as promising materials for micro-optoelectronic devices and next-generation logic devices due to their novel optoelectronic properties, such as strong excitonic effects, tunable direct bandgap from visible to near-infrared regions, valley pseudospin degree of freedom, and so on. Recently, triggered by the growing demand to optimize the performance of TMDs devices, external field regulation engineering has attracted great attention. The goal of this operation is to exploit the external fields to control exciton dynamics in 2D TMDs, including exciton formation and relaxation, and to finally achieve high-performance 2D TMDs devices. Although the regulation strategies of exciton dynamics in 2D TMDs have been well explored, the underlying mechanisms of different regulation strategies need to be further understood due to the complex many-body interactions in exciton dynamics. Here, we first give a brief summary of the fundamental processes of exciton dynamics in 2D TMDs and then summarize the main field-regulation strategies. Particular emphasis is placed on discussing the underlying mechanisms of how different field-regulation strategies control varied fundamental processes. A deep understanding of field regulation provides direct guidelines for the integrated design of 2D TMDs devices in the future.
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| GB/T 7714 | Chen, Wenwei , Zheng, Canghai , Pei, Jiajie et al. External field regulation strategies for exciton dynamics in 2D TMDs [J]. | OPTICAL MATERIALS EXPRESS , 2023 , 13 (4) : 1007-1030 . |
| MLA | Chen, Wenwei et al. "External field regulation strategies for exciton dynamics in 2D TMDs" . | OPTICAL MATERIALS EXPRESS 13 . 4 (2023) : 1007-1030 . |
| APA | Chen, Wenwei , Zheng, Canghai , Pei, Jiajie , Zhan, Hongbing . External field regulation strategies for exciton dynamics in 2D TMDs . | OPTICAL MATERIALS EXPRESS , 2023 , 13 (4) , 1007-1030 . |
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