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学者姓名：李悌涛
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如何同质外延生长出具有原子级平整的氧化镓(Ga2O3)单晶薄膜,是制备高性能Ga2O3基功率电子器件或紫外光电器件的基础.本文通过金属有机气相外延(MOVPE)技术综合调控外延生长的热力学条件与动力学参数,在Ga2O3衬底上制备了厚度为1.0 µm的器件级Ga2O3单晶薄膜(非故意掺杂),对薄膜样品进行了物相、表面形貌、晶体质量和电学性能的研究.该薄膜具有单一β相,呈现出与衬底相同的(100)面择优取向.对Ga2O3薄膜表面形貌进行AFM表征,呈现出典型的台阶流形貌,表面粗糙度0.166 nm,且台阶高度0.6 nm(a/2),表明薄膜具有原子级平整.进一步通过HRXRD双晶摇摆曲线评估Ga2O3薄膜结晶质量,外延膜的FWHM低于单晶衬底,表明外延在晶格匹配衬底上的Ga2O3薄膜质量优于衬底.霍尔效应测试结果表明,Ga2O3薄膜的电子迁移率为92.1 cm2/(V·s),载流子浓度为2.65×1016cm-3.本文的研究结果表明只要通过精细化调控温度、压力、Ⅵ/Ⅲ比等关键热力学条件,使核心动力学参数中的横向扩散速率充分大于纵向沉积速率,就有可能在通用的非刻意斜切衬底上实现高长速二维"台阶流"生长.本研究所制备的具有优异晶体质量与电学特性的(100)面同质外延单晶薄膜,在制造高性能Ga2O3功率电子器件具有重要的应用潜力.
Keyword ：
MOVPE MOVPE 二维"台阶流"生长 二维"台阶流"生长 单晶薄膜 单晶薄膜 原子级平整 原子级平整 同质外延 同质外延 氧化镓 氧化镓
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| GB/T 7714 | 李悌涛 , 卢耀平 , 陈端阳 et al. 氧化镓同质外延及二维"台阶流"生长研究 [J]. | 人工晶体学报 , 2025 , 54 (2) : 219-226 . |
| MLA | 李悌涛 et al. "氧化镓同质外延及二维"台阶流"生长研究" . | 人工晶体学报 54 . 2 (2025) : 219-226 . |
| APA | 李悌涛 , 卢耀平 , 陈端阳 , 齐红基 , 张海忠 . 氧化镓同质外延及二维"台阶流"生长研究 . | 人工晶体学报 , 2025 , 54 (2) , 219-226 . |
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The achievement of single crystalline gallium oxide (Ga2 O3 ) homoepitaxial layers with atomic-level smoothness is fundamental for the fabrication of high-performance Ga2 O3 -based power electronics or ultraviolet photodetectors. In this study, metal organic vapor phase epitaxy (MOVPE) technique was employed to comprehensively control the thermodynamic conditions and kinetic factors of epitaxial growth, resulting in the production of unintentionally doped, device-grade Ga2 O3 single crystal films with a thickness of 1. 0 μm on Ga2 O3 substrates. Characterizations of the Ga2 O3 samples were performed to investigate phase composition, surface morphology, crystal quality, and electrical properties. The Ga2 O3 homoepilayer exhibits a single β phase with a preferential orientation matching the (100) plane of the substrate. Atomic force microscopy (AFM) analysis reveals a typical step-flow morphology, with a surface roughness of 0. 166 nm and a step height of 0. 6 nm (a / 2), indicating atomic-level smoothness. High-resolution X-ray diffraction (HRXRD) rocking curve analysis was conducted to further evaluate the crystallinity of the Ga2 O3 epilayers. The full width at half maximum (FWHM) of the epilayers is lower than that of the single crystal substrate, indicating superior quality of the Ga2 O3 epilayers grown on the lattice-matched substrate. Hall effect measurements indicate an electron mobility of 92. 1 cm2 / (V·s) and a carrier concentration of 2. 65 × 1016 cm - 3 . Our results demonstrate that high-growth-rate 2D step-flow growth on commonly used non-intentionally miscut substrates can be achieved as long as the critical thermodynamic conditions, such as temperature, pressure, and the Ⅵ / Ⅲ ratio—are finely tuned to ensure that the lateral diffusion rate of the core kinetic parameters is sufficiently greater than the vertical deposition rate. The exceptional crystal quality and electrical properties highlight the significant potential of these (100) -oriented homoepitaxial films in the development of high-performance Ga2 O3 -based power electronics. © 2025 Chinese Ceramic Society. All rights reserved.
Keyword ：
atomic-level smoothness atomic-level smoothness gallium oxide gallium oxide homoepitaxy homoepitaxy MOVPE MOVPE single-crystalline film single-crystalline film two-dimensional step-flow growth two-dimensional step-flow growth
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| GB/T 7714 | Li, T. , Lu, Y. , Chen, D. et al. Research on Gallium Oxide Homoepitaxy and Two-Dimensional Step-Flow Growth; [氧化镓同质外延及二维“台阶流” 生长研究] [J]. | Journal of Synthetic Crystals , 2025 , 54 (2) : 219-226 . |
| MLA | Li, T. et al. "Research on Gallium Oxide Homoepitaxy and Two-Dimensional Step-Flow Growth; [氧化镓同质外延及二维“台阶流” 生长研究]" . | Journal of Synthetic Crystals 54 . 2 (2025) : 219-226 . |
| APA | Li, T. , Lu, Y. , Chen, D. , Qi, H. , Zhang, H. . Research on Gallium Oxide Homoepitaxy and Two-Dimensional Step-Flow Growth; [氧化镓同质外延及二维“台阶流” 生长研究] . | Journal of Synthetic Crystals , 2025 , 54 (2) , 219-226 . |
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Optimized inductively coupled plasma (ICP) etching process can improve the surface quality of (1-Ga2O3 thin film to enhance the power figure of merit of (1-Ga2O3 Schottky barrier diodes (SBDs). However, the mechanism of surface quality improvement of ICP etching is not yet clear. In this letter, we verified that the surface qualities of (1-Ga2O3 SBDs could be modified by varying the ratios of BCl3 and Ar etching plasmas. Moreover, electrical performance tests were conducted to verify that the improved surface quality can enhance the electrical properties. Benefitted from the high surface quality of (1-Ga2O3 epitaxial layer, the (1-Ga2O3 SBD without termination structure exhibits a low specific on-resistance (Ron,sp) of 4 m Omega & sdot;cm2 and high breakdown voltage (BV) of 1500 V. These results can pave the way for the preparation of high-performance (1-Ga2O3 power SBDs.
Keyword ：
Beta-phase gallium oxide Beta-phase gallium oxide Inductively coupled plasma etching Inductively coupled plasma etching Schottky barrier diode Schottky barrier diode Surface quality Surface quality
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| GB/T 7714 | Deng, Yicong , Chen, Desen , Li, Titao et al. Surface quality improvement mechanism of ICP etching for Ga2O3 Schottky barrier diode [J]. | MICRO AND NANOSTRUCTURES , 2025 , 199 . |
| MLA | Deng, Yicong et al. "Surface quality improvement mechanism of ICP etching for Ga2O3 Schottky barrier diode" . | MICRO AND NANOSTRUCTURES 199 (2025) . |
| APA | Deng, Yicong , Chen, Desen , Li, Titao , Zhu, Minmin , Xu, Xiaorui , Zhang, Haizhong et al. Surface quality improvement mechanism of ICP etching for Ga2O3 Schottky barrier diode . | MICRO AND NANOSTRUCTURES , 2025 , 199 . |
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In this Letter, a Ga2O3 vertical Schottky barrier diode (SBD) with self-aligned field plate and mesa termination is fabricated and studied. The combination of field plate and mesa termination can effectively make the electric field distribution uniform in the termination, and thus the proposed SBD features high breakdown voltage (BV). Moreover, to eliminate alignment deviation and simplify the fabrication process, a self-aligned etching process is developed. The experimental results show that a low specific on-resistance of 4.405 mΩ·cm2 and a high BV of 3113 V can be simultaneously derived on the proposed SBD, yielding a high power figure of merit of 2.2 GW/cm2. Meanwhile, a considerably low forward voltage of 1.53 V at 100 A/cm2 is also achieved, demonstrating the low conduction loss of the device. © 2024 Author(s).
Keyword ：
Electric fields Electric fields Etching Etching Gallium compounds Gallium compounds Schottky barrier diodes Schottky barrier diodes
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| GB/T 7714 | Xu, Xiaorui , Deng, Yicong , Li, Titao et al. Over 2 GW/cm2 low-conduction loss Ga2O3 vertical SBD with self-aligned field plate and mesa termination [J]. | Applied Physics Letters , 2024 , 125 (2) . |
| MLA | Xu, Xiaorui et al. "Over 2 GW/cm2 low-conduction loss Ga2O3 vertical SBD with self-aligned field plate and mesa termination" . | Applied Physics Letters 125 . 2 (2024) . |
| APA | Xu, Xiaorui , Deng, Yicong , Li, Titao , Chen, Duanyang , Wang, Fangzhou , Yu, Cheng et al. Over 2 GW/cm2 low-conduction loss Ga2O3 vertical SBD with self-aligned field plate and mesa termination . | Applied Physics Letters , 2024 , 125 (2) . |
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In this Letter, a high-quality and high-resistivity nitrogen (N)-doped Ga2O3 current blocking layer (CBL) is grown utilizing metal-organic chemical vapor deposition homoepitaxial technology. By using nitrous oxide (N2O) as oxygen source for Ga2O3 growth and N source for doping and controlling the growth temperature, the grown CBL can effectively achieve high (similar to 10(19) cm(-3)) or low (similar to 10(17) cm-3) N doping concentrations, as well as high crystal quality. Furthermore, the electrical properties of the developed CBL are verified at the device level, which shows that the device using the CBL can withstand bidirectional voltages exceeding 3.5 kV with very low leakage (<= 1 x 10(-4) A/cm2). This work can pave the way for the realization of high-voltage and low-leakage Ga2O3 vertical devices, especially metal-oxide-semiconductor field effect transistors.
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| GB/T 7714 | Xu, Xiaorui , Chen, Desen , Lu, Yaoping et al. Nitrogen-doped Ga2O3 current blocking layer using MOCVD homoepitaxy for high-voltage and low-leakage Ga2O3 vertical device fabrication [J]. | APPLIED PHYSICS LETTERS , 2024 , 125 (20) . |
| MLA | Xu, Xiaorui et al. "Nitrogen-doped Ga2O3 current blocking layer using MOCVD homoepitaxy for high-voltage and low-leakage Ga2O3 vertical device fabrication" . | APPLIED PHYSICS LETTERS 125 . 20 (2024) . |
| APA | Xu, Xiaorui , Chen, Desen , Lu, Yaoping , Li, Titao , Han, Xueli , Chen, Duanyang et al. Nitrogen-doped Ga2O3 current blocking layer using MOCVD homoepitaxy for high-voltage and low-leakage Ga2O3 vertical device fabrication . | APPLIED PHYSICS LETTERS , 2024 , 125 (20) . |
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The growing interest in ferroelectric materials has witnessed the thriving prospect of bio-inspired artificial neuromorphic system, where multi-level polarization states play a crucial role. In this work, with typical BaTiO3 ferroelectric thin film as the model system, we explore the physical effects of inhomogeneity on polarization switching dynamics and neuromorphic performance. Inhomogeneous films exhibited pinched polarization-electric field hysteresis loops, leading to a high recognition accuracy of 96.03% for hand-written digits, compared to about 10.31% for homogeneous films. The inhomogeneity in switching dynamics was analyzed by inhomogeneous field mechanism. Diffusive distributions of switching time and local electric fields were observed, aligning with experimental results and the expected inhomogeneity. The prolonged domain wall depinning time and lowered energy consumption suggest the potential for multi-level polarization states, a possibility further confirmed by phase-field simulations that demonstrated their presence during long-term potentiation/depression. Our work highlights the positive influence of inhomogeneity in enhancing the performance of ferroelectric-based neuromorphic systems.
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| GB/T 7714 | Wang, Chenxi , Guo, Lin , Hu, Junjie et al. Inhomogeneity-facilitated application of ferroelectric barium titanate thin films in artificial neuromorphic system [J]. | APPLIED PHYSICS LETTERS , 2024 , 125 (19) . |
| MLA | Wang, Chenxi et al. "Inhomogeneity-facilitated application of ferroelectric barium titanate thin films in artificial neuromorphic system" . | APPLIED PHYSICS LETTERS 125 . 19 (2024) . |
| APA | Wang, Chenxi , Guo, Lin , Hu, Junjie , Li, Titao , Zhuo, Fangping , Wu, Hong-Hui et al. Inhomogeneity-facilitated application of ferroelectric barium titanate thin films in artificial neuromorphic system . | APPLIED PHYSICS LETTERS , 2024 , 125 (19) . |
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This research employs first-principles calculations to address the challenges presented by processing complexity and low damage tolerance in transition metal borides. The study focuses on designing and investigating MAB phase compounds of M4AlB4 (M = Cr, Mo, W). We conduct a comprehensive assessment of the stability, phononic, electronic, elastic, and optical properties of Cr4AlB4, Mo4AlB4, and W4AlB4. The calculated results reveal formation enthalpies of -0.516, -0.490, and -0.336 eV per atom for Cr4AlB4, Mo4AlB4, and W4AlB4, respectively. Notably, W4AlB4 emerges as a promising precursor material for MABene synthesis, demonstrating exceptional thermal shock resistance. The dielectric constants epsilon(1)(0) were determined as 126.466, 80.277, and 136.267 for Cr4AlB4, Mo4AlB4, and W4AlB4, respectively. Significantly, W4AlB4 exhibits remarkably high reflectivity (>80%) within the wavelength range of 19.84-23.6 nm, making it an ideal candidate for extreme ultraviolet (EUV) reflective coatings. The insights gleaned from this study provide a strong research framework and theoretical guidance for advancing the synthesis of innovative MAB-phase compounds.
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| GB/T 7714 | Lu, Yaoping , Li, Titao , Li, Kangjie et al. Theoretical prediction on the stability, elastic, electronic and optical properties of MAB-phase M4AlB4 compounds (M = Cr, Mo, W) [J]. | RSC ADVANCES , 2024 , 14 (2) : 1186-1194 . |
| MLA | Lu, Yaoping et al. "Theoretical prediction on the stability, elastic, electronic and optical properties of MAB-phase M4AlB4 compounds (M = Cr, Mo, W)" . | RSC ADVANCES 14 . 2 (2024) : 1186-1194 . |
| APA | Lu, Yaoping , Li, Titao , Li, Kangjie , Hao, Derek , Chen, Zuxin , Zhang, Haizhong . Theoretical prediction on the stability, elastic, electronic and optical properties of MAB-phase M4AlB4 compounds (M = Cr, Mo, W) . | RSC ADVANCES , 2024 , 14 (2) , 1186-1194 . |
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In this Letter, a Ga2O3 vertical Schottky barrier diode (SBD) with self-aligned field plate and mesa termination is fabricated and studied. The combination of field plate and mesa termination can effectively make the electric field distribution uniform in the termination, and thus the proposed SBD features high breakdown voltage (BV). Moreover, to eliminate alignment deviation and simplify the fabrication process, a self-aligned etching process is developed. The experimental results show that a low specific on-resistance of 4.405 m Omegacm(2) and a high BV of 3113 V can be simultaneously derived on the proposed SBD, yielding a high power figure of merit of 2.2 GW/cm(2). Meanwhile, a considerably low forward voltage of 1.53 V at 100 A/cm(2) is also achieved, demonstrating the low conduction loss of the device.
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| GB/T 7714 | Xu, Xiaorui , Deng, Yicong , Li, Titao et al. Over 2 GW/cm2 low-conduction loss Ga2O3 vertical SBD with self-aligned field plate and mesa termination [J]. | APPLIED PHYSICS LETTERS , 2024 , 125 (2) . |
| MLA | Xu, Xiaorui et al. "Over 2 GW/cm2 low-conduction loss Ga2O3 vertical SBD with self-aligned field plate and mesa termination" . | APPLIED PHYSICS LETTERS 125 . 2 (2024) . |
| APA | Xu, Xiaorui , Deng, Yicong , Li, Titao , Chen, Duanyang , Wang, Fangzhou , Yu, Cheng et al. Over 2 GW/cm2 low-conduction loss Ga2O3 vertical SBD with self-aligned field plate and mesa termination . | APPLIED PHYSICS LETTERS , 2024 , 125 (2) . |
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In this work, t he i nfluence o f d ifferent s urface treatments on the breakdown voltage (BV) and the specific on-state resistance (R-on,R-sp) of the beta-phase gallium oxide (beta-Ga2O3) Schottky barrier diodes (SBD) is investigated. The results show that after fast inductively coupled plasma (ICP) etching, slow ICP etching and piranha treatment, the unreliable surface of beta-Ga2O3 can be effectively removed with small surface roughness and little co-products, thus increasing BV from 141 V to 724 V and reducing R-on,R- sp from 5.1 m Omega center dot cm(2) to 1.2 m Omega center dot cm(2). Consequently, the results validate the effectiveness of the surface treatments and can provide guidance for device process optimization.
Keyword ：
Beta-phase gallium oxide Beta-phase gallium oxide Inductively coupled plasma etching Inductively coupled plasma etching Schottky barrier diode Schottky barrier diode Surface quality Surface quality
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| GB/T 7714 | Xu, Xiaorui , Deng, Yicong , Ye, Shurui et al. Demonstration of Surface Treatment for β-Ga2O3 Schottky Barrier Diode with High Breakdown Voltage and Low Specific On-Resistance [J]. | 2024 36TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC S, ISPSD 2024 , 2024 : 240-243 . |
| MLA | Xu, Xiaorui et al. "Demonstration of Surface Treatment for β-Ga2O3 Schottky Barrier Diode with High Breakdown Voltage and Low Specific On-Resistance" . | 2024 36TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC S, ISPSD 2024 (2024) : 240-243 . |
| APA | Xu, Xiaorui , Deng, Yicong , Ye, Shurui , Chen, Desen , Li, Titao , Zhu, Minmin et al. Demonstration of Surface Treatment for β-Ga2O3 Schottky Barrier Diode with High Breakdown Voltage and Low Specific On-Resistance . | 2024 36TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND IC S, ISPSD 2024 , 2024 , 240-243 . |
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In this work, a novel gallium oxide (Ga2O3) vertical FinFET with integrated Schottky barrier diode (SBD-FinFET), which achieves low conduction losses, is proposed. In the reverse conduction state, the integrated SBD can provide additional low-resistance path to conduct reverse current, hence achieving low reverse conduction loss. In the switching state, the SBD-FinFET can also reduce gate-drain capacitance and gate charge, thus featuring fast switching speed and low switching losses. Furthermore, in the other states, the integrated SBD of the SBD-FinFET is in the OFF state, which does not significantly affect the device characteristics. The well-calibrated simulation results show that when compared with the state-of-the-art FinFET with integrated Fin channel and ohmic contact diode (FOD-FinFET), the SBD-FinFET can reduce reverse conduction loss, turn-on loss, and turn-off loss by 25%, 19%, and 22%, respectively, while other characteristics retain almost unchanged.
Keyword ：
beta-gallium oxide (Ga2O3) beta-gallium oxide (Ga2O3) conduction losses conduction losses Electric breakdown Electric breakdown Field effect transistors Field effect transistors FinFET FinFET FinFETs FinFETs Gallium Gallium Logic gates Logic gates Schottky barrier diode (SBD) Schottky barrier diode (SBD) Schottky barriers Schottky barriers Schottky diodes Schottky diodes
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| GB/T 7714 | Xu, Xiaorui , Deng, Yicong , Li, Titao et al. Ga2O3 Vertical FinFET With Integrated Schottky Barrier Diode for Low-Loss Conduction [J]. | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2024 , 71 (4) : 2530-2535 . |
| MLA | Xu, Xiaorui et al. "Ga2O3 Vertical FinFET With Integrated Schottky Barrier Diode for Low-Loss Conduction" . | IEEE TRANSACTIONS ON ELECTRON DEVICES 71 . 4 (2024) : 2530-2535 . |
| APA | Xu, Xiaorui , Deng, Yicong , Li, Titao , Xu, Xiaohui , Yang, Dan , Zhu, Minmin et al. Ga2O3 Vertical FinFET With Integrated Schottky Barrier Diode for Low-Loss Conduction . | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2024 , 71 (4) , 2530-2535 . |
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