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学者姓名：李悌涛
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如何同质外延生长出具有原子级平整的氧化镓(Ga2O3)单晶薄膜,是制备高性能Ga2O3基功率电子器件或紫外光电器件的基础.本文通过金属有机气相外延(MOVPE)技术综合调控外延生长的热力学条件与动力学参数,在Ga2O3衬底上制备了厚度为1.0 µm的器件级Ga2O3单晶薄膜(非故意掺杂),对薄膜样品进行了物相、表面形貌、晶体质量和电学性能的研究.该薄膜具有单一β相,呈现出与衬底相同的(100)面择优取向.对Ga2O3薄膜表面形貌进行AFM表征,呈现出典型的台阶流形貌,表面粗糙度0.166 nm,且台阶高度0.6 nm(a/2),表明薄膜具有原子级平整.进一步通过HRXRD双晶摇摆曲线评估Ga2O3薄膜结晶质量,外延膜的FWHM低于单晶衬底,表明外延在晶格匹配衬底上的Ga2O3薄膜质量优于衬底.霍尔效应测试结果表明,Ga2O3薄膜的电子迁移率为92.1 cm2/(V·s),载流子浓度为2.65×1016cm-3.本文的研究结果表明只要通过精细化调控温度、压力、Ⅵ/Ⅲ比等关键热力学条件,使核心动力学参数中的横向扩散速率充分大于纵向沉积速率,就有可能在通用的非刻意斜切衬底上实现高长速二维"台阶流"生长.本研究所制备的具有优异晶体质量与电学特性的(100)面同质外延单晶薄膜,在制造高性能Ga2O3功率电子器件具有重要的应用潜力.
Keyword ：
MOVPE MOVPE 二维"台阶流"生长 二维"台阶流"生长 单晶薄膜 单晶薄膜 原子级平整 原子级平整 同质外延 同质外延 氧化镓 氧化镓
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| GB/T 7714 | 李悌涛 , 卢耀平 , 陈端阳 et al. 氧化镓同质外延及二维"台阶流"生长研究 [J]. | 人工晶体学报 , 2025 , 54 (2) : 219-226 . |
| MLA | 李悌涛 et al. "氧化镓同质外延及二维"台阶流"生长研究" . | 人工晶体学报 54 . 2 (2025) : 219-226 . |
| APA | 李悌涛 , 卢耀平 , 陈端阳 , 齐红基 , 张海忠 . 氧化镓同质外延及二维"台阶流"生长研究 . | 人工晶体学报 , 2025 , 54 (2) , 219-226 . |
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Ga2O3 -based solar-blind photodetectors (SBPDs) with typical Schottky structure usually exhibit low responsivity and rapid saturation as reverse bias increase in the lack of avalanche gain. In this study, large-area photosensitive Ga2O3 single-crystalline films were homoepitaxially grown by MOCVD, enabling the fabrication of high-performance SBPDs. At a low bias of -5 V, the device exhibits an ultrahigh photoresponsivity of 27.5 A/W and a photo-to-dark current ratio of 2.4 x 10(5) with an ultralow dark current of 3.74 x 10(-8) A/cm (2) , superior to most similar Ga2O3 SBPDs reported to date. Furthermore, without sacrificing the response speed (t(r) = 100 ns, t(d) = 240.5 mu s), the device attained a peak external quantum efficiency of 1.5 x 10 (4) %. This stems from the ultrahigh photoconductive-like gain caused by significant mobility differences of photogenerated carriers under reverse bias in high-quality Ga2O3 homo-epilayer.
Keyword ：
Dark current Dark current Ga2O3 Ga2O3 Gallium Gallium high gain high gain homoepitaxy homoepitaxy MOCVD MOCVD Performance evaluation Performance evaluation Photoconductivity Photoconductivity Photodiodes Photodiodes Photonic band gap Photonic band gap SBPD SBPD Schottky barriers Schottky barriers Schottky photodiode Schottky photodiode Substrates Substrates X-ray scattering X-ray scattering
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| GB/T 7714 | Zheng, Zhenjie , Lu, Yaoping , Zhuang, Jiachang et al. Ultrahigh Gain at Low Bias Achieved in Homoepitaxial Ga2O3 Schottky Photodiode With Low Dark Current [J]. | IEEE ELECTRON DEVICE LETTERS , 2025 , 46 (2) : 143-146 . |
| MLA | Zheng, Zhenjie et al. "Ultrahigh Gain at Low Bias Achieved in Homoepitaxial Ga2O3 Schottky Photodiode With Low Dark Current" . | IEEE ELECTRON DEVICE LETTERS 46 . 2 (2025) : 143-146 . |
| APA | Zheng, Zhenjie , Lu, Yaoping , Zhuang, Jiachang , Jia, Lemin , Zhu, Shoudong , Chen, Duanyang et al. Ultrahigh Gain at Low Bias Achieved in Homoepitaxial Ga2O3 Schottky Photodiode With Low Dark Current . | IEEE ELECTRON DEVICE LETTERS , 2025 , 46 (2) , 143-146 . |
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The unclear p-type conduction mechanism and lack of reliable p-type Ga2O3 severely hinder Ga2O3-based high-voltage electronics. Here, we demonstrate in situ nitrogen (N) doping via metal-organic chemical vapor deposition homoepitaxy using N2O as oxygen source and acceptor dopant. Structural and compositional analyses confirm efficient N incorporation (favored by N-Ga bonding) compensating residual Si/H donors without compromising crystallinity. The Ga2O3:N epilayers achieve excellent p-type performance: 1.04 x 1018 cm-3 hole concentration, 0.47 cm2 V-1 s-1 mobility at room temperature, and 0.168 eV activation energy. A completely new insight into the p-type conduction mechanism in Ga2O3 is introduced, focusing on the crystallographic visualization of acceptors (N2-) and holes (O-), as well as the hole excitation process. It is suggested that careful suppression of the donor compensation effect and precise control of the N chemical potential, which leads to the fabrication of trace O- species solid-dissolved within Ga2O3, are essential for achieving high-hole-concentration p-type conduction in oxides.
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| GB/T 7714 | Lu, Yaoping , Jia, Lemin , Chen, Duanyang et al. Insight into the High Hole Concentration of p-Type Ga2O3 via In Situ Nitrogen Doping [J]. | JOURNAL OF PHYSICAL CHEMISTRY LETTERS , 2025 , 16 (17) : 4243-4251 . |
| MLA | Lu, Yaoping et al. "Insight into the High Hole Concentration of p-Type Ga2O3 via In Situ Nitrogen Doping" . | JOURNAL OF PHYSICAL CHEMISTRY LETTERS 16 . 17 (2025) : 4243-4251 . |
| APA | Lu, Yaoping , Jia, Lemin , Chen, Duanyang , Li, Titao , Qi, Hongji , Xu, Xiaorui et al. Insight into the High Hole Concentration of p-Type Ga2O3 via In Situ Nitrogen Doping . | JOURNAL OF PHYSICAL CHEMISTRY LETTERS , 2025 , 16 (17) , 4243-4251 . |
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Optimized inductively coupled plasma (ICP) etching process can improve the surface quality of (1-Ga2O3 thin film to enhance the power figure of merit of (1-Ga2O3 Schottky barrier diodes (SBDs). However, the mechanism of surface quality improvement of ICP etching is not yet clear. In this letter, we verified that the surface qualities of (1-Ga2O3 SBDs could be modified by varying the ratios of BCl3 and Ar etching plasmas. Moreover, electrical performance tests were conducted to verify that the improved surface quality can enhance the electrical properties. Benefitted from the high surface quality of (1-Ga2O3 epitaxial layer, the (1-Ga2O3 SBD without termination structure exhibits a low specific on-resistance (Ron,sp) of 4 m Omega & sdot;cm2 and high breakdown voltage (BV) of 1500 V. These results can pave the way for the preparation of high-performance (1-Ga2O3 power SBDs.
Keyword ：
Beta-phase gallium oxide Beta-phase gallium oxide Inductively coupled plasma etching Inductively coupled plasma etching Schottky barrier diode Schottky barrier diode Surface quality Surface quality
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| GB/T 7714 | Deng, Yicong , Chen, Desen , Li, Titao et al. Surface quality improvement mechanism of ICP etching for Ga2O3 Schottky barrier diode [J]. | MICRO AND NANOSTRUCTURES , 2025 , 199 . |
| MLA | Deng, Yicong et al. "Surface quality improvement mechanism of ICP etching for Ga2O3 Schottky barrier diode" . | MICRO AND NANOSTRUCTURES 199 (2025) . |
| APA | Deng, Yicong , Chen, Desen , Li, Titao , Zhu, Minmin , Xu, Xiaorui , Zhang, Haizhong et al. Surface quality improvement mechanism of ICP etching for Ga2O3 Schottky barrier diode . | MICRO AND NANOSTRUCTURES , 2025 , 199 . |
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The precise control of acceptor doping concentrations in epilayers is critical for fabricating key β-Ga2O3-based power electronic structures, including current-blocking layers, p-type epilayers, and drift layers. Unintentional nitrogen (N) compensating dopants introduced by N2O (a common oxygen precursor) during β-Ga2O3 metalorganic chemical vapor deposition growth significantly affects electrical properties. This study demonstrates that N concentration in epilayers is largely determined by growth temperature and surface adsorption efficiency. As the epitaxial temperature increases, the N doping concentration in the epilayer decreases. When the epitaxial temperature exceeds 1000 °C, the efficiency of N adsorption on β-Ga2O3 surfaces is influenced by both epitaxial parameters and substrate orientation. Modifying epitaxial parameters, especially by increasing chamber pressure, enhances the N concentration in β-Ga2O3 epilayers. Stronger N adsorption occurs on the (100)-plane compared to the (001)-plane epilayer; however, the (001)-plane epilayer allows better N concentration tuning through adjustments in parameters. First-principles calculations indicate that such observed differences in adsorption efficiency are attributable to variations in adsorption energies specific to each plane, coupled with competitive interactions between nitrogen (N) and oxygen (O) atoms during surface reactions. This study offers fundamental insights that advance the engineering of β-Ga2O3 homoepilayers for power electronics applications. © 2025 Author(s).
Keyword ：
Adsorption Adsorption Doping (additives) Doping (additives) Efficiency Efficiency Epilayers Epilayers Epitaxial growth Epitaxial growth Gallium compounds Gallium compounds Nitrogen Nitrogen Oxygen Oxygen Surface reactions Surface reactions
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| GB/T 7714 | Lu, Yaoping , Yang, Ancang , Li, Titao et al. In situ nitrogen doping of β-Ga2O3 during MOCVD homoepitaxy: A theoretical and experimental study [J]. | Applied Physics Letters , 2025 , 127 (7) . |
| MLA | Lu, Yaoping et al. "In situ nitrogen doping of β-Ga2O3 during MOCVD homoepitaxy: A theoretical and experimental study" . | Applied Physics Letters 127 . 7 (2025) . |
| APA | Lu, Yaoping , Yang, Ancang , Li, Titao , Zhang, Jinxin , Jia, Lemin , Chen, Duanyang et al. In situ nitrogen doping of β-Ga2O3 during MOCVD homoepitaxy: A theoretical and experimental study . | Applied Physics Letters , 2025 , 127 (7) . |
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Conventional Ga2O3-based solar-blind photodetectors typically require a high bias voltage for efficient operation, leading to significant energy consumption. To address this, we propose an alternative approach using MOCVDgrown homoepitaxial (3-Ga2O3 thin films on (100) Sn-doped (3-Ga2O3 wafer to develop photodetectors with ultralow bias and high gain. A graphene/ Ga2O3 heterojunction device was fabricated, exhibiting an exceptionally low dark current of 0.1nA and a photocurrent ratio of 104 at -5 V, along with a suppression ratio (R254nm/R405nm) of 1800 at 0 V. By leveraging graphene's carrier-carrier scattering and Ga2O3 ' s UV absorption, the device achieved a responsivity increase from 0.04 mA/W (0 V) to 30 mA/W (-0.5 V), equivalent to a 73944 % enhancement, while the detectivity improved by 1096 %, reaching 2.68 x 1012 Jones. This work provides insights into the development of highly sensitive, low-power solar-blind UV photodetectors.
Keyword ：
Detectivity Detectivity Heterojunction Heterojunction Homoepitaxial Ga 2 O 3 Homoepitaxial Ga 2 O 3 Responsivity Responsivity Solar-blind photodetectors Solar-blind photodetectors
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| GB/T 7714 | Zhuang, Jiachang , Jia, Lemin , Lu, Yaoping et al. High-performance, energy-efficient graphene/Ga2O3 heterojunction solar-blind photodetectors enhanced by carrier-carrier scattering [J]. | OPTICS AND LASER TECHNOLOGY , 2025 , 192 . |
| MLA | Zhuang, Jiachang et al. "High-performance, energy-efficient graphene/Ga2O3 heterojunction solar-blind photodetectors enhanced by carrier-carrier scattering" . | OPTICS AND LASER TECHNOLOGY 192 (2025) . |
| APA | Zhuang, Jiachang , Jia, Lemin , Lu, Yaoping , Zheng, Zhenjie , Li, Titao , Zhu, Shoudong et al. High-performance, energy-efficient graphene/Ga2O3 heterojunction solar-blind photodetectors enhanced by carrier-carrier scattering . | OPTICS AND LASER TECHNOLOGY , 2025 , 192 . |
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Photovoltaic solar-blind ultraviolet photodetectors (SBPDs) operate independently of an external power source, addressing critical demands in extreme environments, such as forest fire detection and atmospheric ozone layer monitoring. Gallium oxide (Ga2O3) offers significant potential for extreme applications due to its radiation resistance and high-temperature stability. Here, we present a novel homoepitaxy strategy to produce an "atomic smooth" step-flow Ga2O3 photosensitive layer, successfully fabricating device-grade Ga2O3/n+-Ga2O3 homojunctions for photovoltaic SBPDs. These devices exhibit a maximum open-circuit voltage of 1.0 V, an ultrahigh external quantum efficiency of 59.5%, and an ultrafast response time of 100 ns under zero bias, maintaining consistent performance even at 390 K. By implementing a 2D step-flow growth mode, both bulk and interface defects were effectively suppressed, achieving the desired band alignment. Furthermore, the optimized high-quality depletion region formed by the Ga2O3 layer facilitates enhanced carrier drift, resulting in an efficient carrier collection. This work fully explores the potential of Ga2O3 SBPDs for extreme applications and provides an effective design strategy for achieving photovoltaic detectors characterized by zero power consumption, high responsivity, and rapid response.
Keyword ：
Ga2O3 Ga2O3 homoepitaxy homoepitaxy open-circuit voltage open-circuit voltage solar-blind photodetector solar-blind photodetector step-flow step-flow
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| GB/T 7714 | Zhu, Shoudong , Zheng, Zhenjie , Lu, Yaoping et al. Ultrahigh-Performance Photovoltaic Ga2O3 Solar-Blind Ultraviolet Detectors via Two-Dimensional Step-Flow Growth and Drift Region Optimization [J]. | ACS APPLIED MATERIALS & INTERFACES , 2025 , 17 (34) : 48523-48531 . |
| MLA | Zhu, Shoudong et al. "Ultrahigh-Performance Photovoltaic Ga2O3 Solar-Blind Ultraviolet Detectors via Two-Dimensional Step-Flow Growth and Drift Region Optimization" . | ACS APPLIED MATERIALS & INTERFACES 17 . 34 (2025) : 48523-48531 . |
| APA | Zhu, Shoudong , Zheng, Zhenjie , Lu, Yaoping , Long, Hao , Zhuang, Jiachang , Jia, Lemin et al. Ultrahigh-Performance Photovoltaic Ga2O3 Solar-Blind Ultraviolet Detectors via Two-Dimensional Step-Flow Growth and Drift Region Optimization . | ACS APPLIED MATERIALS & INTERFACES , 2025 , 17 (34) , 48523-48531 . |
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In this Letter, a Ga2O3 vertical Schottky barrier diode (SBD) with self-aligned field plate and mesa termination is fabricated and studied. The combination of field plate and mesa termination can effectively make the electric field distribution uniform in the termination, and thus the proposed SBD features high breakdown voltage (BV). Moreover, to eliminate alignment deviation and simplify the fabrication process, a self-aligned etching process is developed. The experimental results show that a low specific on-resistance of 4.405 m Omegacm(2) and a high BV of 3113 V can be simultaneously derived on the proposed SBD, yielding a high power figure of merit of 2.2 GW/cm(2). Meanwhile, a considerably low forward voltage of 1.53 V at 100 A/cm(2) is also achieved, demonstrating the low conduction loss of the device.
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| GB/T 7714 | Xu, Xiaorui , Deng, Yicong , Li, Titao et al. Over 2 GW/cm2 low-conduction loss Ga2O3 vertical SBD with self-aligned field plate and mesa termination [J]. | APPLIED PHYSICS LETTERS , 2024 , 125 (2) . |
| MLA | Xu, Xiaorui et al. "Over 2 GW/cm2 low-conduction loss Ga2O3 vertical SBD with self-aligned field plate and mesa termination" . | APPLIED PHYSICS LETTERS 125 . 2 (2024) . |
| APA | Xu, Xiaorui , Deng, Yicong , Li, Titao , Chen, Duanyang , Wang, Fangzhou , Yu, Cheng et al. Over 2 GW/cm2 low-conduction loss Ga2O3 vertical SBD with self-aligned field plate and mesa termination . | APPLIED PHYSICS LETTERS , 2024 , 125 (2) . |
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This research employs first-principles calculations to address the challenges presented by processing complexity and low damage tolerance in transition metal borides. The study focuses on designing and investigating MAB phase compounds of M4AlB4 (M = Cr, Mo, W). We conduct a comprehensive assessment of the stability, phononic, electronic, elastic, and optical properties of Cr4AlB4, Mo4AlB4, and W4AlB4. The calculated results reveal formation enthalpies of -0.516, -0.490, and -0.336 eV per atom for Cr4AlB4, Mo4AlB4, and W4AlB4, respectively. Notably, W4AlB4 emerges as a promising precursor material for MABene synthesis, demonstrating exceptional thermal shock resistance. The dielectric constants epsilon(1)(0) were determined as 126.466, 80.277, and 136.267 for Cr4AlB4, Mo4AlB4, and W4AlB4, respectively. Significantly, W4AlB4 exhibits remarkably high reflectivity (>80%) within the wavelength range of 19.84-23.6 nm, making it an ideal candidate for extreme ultraviolet (EUV) reflective coatings. The insights gleaned from this study provide a strong research framework and theoretical guidance for advancing the synthesis of innovative MAB-phase compounds.
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| GB/T 7714 | Lu, Yaoping , Li, Titao , Li, Kangjie et al. Theoretical prediction on the stability, elastic, electronic and optical properties of MAB-phase M4AlB4 compounds (M = Cr, Mo, W) [J]. | RSC ADVANCES , 2024 , 14 (2) : 1186-1194 . |
| MLA | Lu, Yaoping et al. "Theoretical prediction on the stability, elastic, electronic and optical properties of MAB-phase M4AlB4 compounds (M = Cr, Mo, W)" . | RSC ADVANCES 14 . 2 (2024) : 1186-1194 . |
| APA | Lu, Yaoping , Li, Titao , Li, Kangjie , Hao, Derek , Chen, Zuxin , Zhang, Haizhong . Theoretical prediction on the stability, elastic, electronic and optical properties of MAB-phase M4AlB4 compounds (M = Cr, Mo, W) . | RSC ADVANCES , 2024 , 14 (2) , 1186-1194 . |
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In this work, a novel gallium oxide (Ga2O3) vertical FinFET with integrated Schottky barrier diode (SBD-FinFET), which achieves low conduction losses, is proposed. In the reverse conduction state, the integrated SBD can provide additional low-resistance path to conduct reverse current, hence achieving low reverse conduction loss. In the switching state, the SBD-FinFET can also reduce gate-drain capacitance and gate charge, thus featuring fast switching speed and low switching losses. Furthermore, in the other states, the integrated SBD of the SBD-FinFET is in the OFF state, which does not significantly affect the device characteristics. The well-calibrated simulation results show that when compared with the state-of-the-art FinFET with integrated Fin channel and ohmic contact diode (FOD-FinFET), the SBD-FinFET can reduce reverse conduction loss, turn-on loss, and turn-off loss by 25%, 19%, and 22%, respectively, while other characteristics retain almost unchanged.
Keyword ：
beta-gallium oxide (Ga2O3) beta-gallium oxide (Ga2O3) conduction losses conduction losses Electric breakdown Electric breakdown Field effect transistors Field effect transistors FinFET FinFET FinFETs FinFETs Gallium Gallium Logic gates Logic gates Schottky barrier diode (SBD) Schottky barrier diode (SBD) Schottky barriers Schottky barriers Schottky diodes Schottky diodes
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| GB/T 7714 | Xu, Xiaorui , Deng, Yicong , Li, Titao et al. Ga2O3 Vertical FinFET With Integrated Schottky Barrier Diode for Low-Loss Conduction [J]. | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2024 , 71 (4) : 2530-2535 . |
| MLA | Xu, Xiaorui et al. "Ga2O3 Vertical FinFET With Integrated Schottky Barrier Diode for Low-Loss Conduction" . | IEEE TRANSACTIONS ON ELECTRON DEVICES 71 . 4 (2024) : 2530-2535 . |
| APA | Xu, Xiaorui , Deng, Yicong , Li, Titao , Xu, Xiaohui , Yang, Dan , Zhu, Minmin et al. Ga2O3 Vertical FinFET With Integrated Schottky Barrier Diode for Low-Loss Conduction . | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2024 , 71 (4) , 2530-2535 . |
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