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学者姓名：杨丹
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短期电力负荷预测的准确性对电力系统的运营和规划至关重要.提出一种基于相似日的多模型融合方法(Similarity-based Multi-Model Fusion Method,SMFM).首先,利用灰色关联分析法(Grey Relational Analysis,GRA)和平均基准负荷日选取相似日.其次,采用Stacking算法进行两阶段预测.第一阶段,采用极端梯度提升模型(Extreme Gradient Boosting,XGBoost)、轻量级梯度提升机(Light Gradient Boosting Machine,LightGBM)以及卷积神经网络与双向长短期记忆(Convolutional Neural Network combined with Bidirectional Long Short-Term Memory,CNN-BiLSTM)网络融合模型.第二阶段,采用了多层感知器(Multilayer Perceptron,MLP)模型,以进一步提高预测的准确性.实验结果表明,所提出的方法在均方误差(Mean Squared Error,MSE)、均方根误差(Root Mean Squared Error,RMSE)和平均绝对误差(Mean Absolute Error,MAE)方面,较其他负荷预测模型有所提升.
Keyword ：
Stacking算法 Stacking算法 平均基准负荷日 平均基准负荷日 相似日 相似日
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| GB/T 7714 | 杨丹 , 陈俊 . 基于相似日的多模型融合短期电力负荷预测 [J]. | 电脑与信息技术 , 2025 , 33 (1) : 6-9,54 . |
| MLA | 杨丹 等. "基于相似日的多模型融合短期电力负荷预测" . | 电脑与信息技术 33 . 1 (2025) : 6-9,54 . |
| APA | 杨丹 , 陈俊 . 基于相似日的多模型融合短期电力负荷预测 . | 电脑与信息技术 , 2025 , 33 (1) , 6-9,54 . |
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Solar-blind ultraviolet photodetectors (SBUV-PDs) are utilized in various military and civilian fields, encompassing missile tracking, high-voltage detection, and fire warning systems. Ga2O3 emerges as the prime candidate for such PDs owing to its elevated bandgap, remarkable thermal stability, and facile fabrication process. The metal-semiconductor-metal (MSM) structure garners attention for its swift response time and straightforward preparation, thus becoming a focal point among diverse PD architectures. Nevertheless, the metal surface impedes optical absorption, thereby diminishing the quantum efficiency of the PD. In this work, we introduce a nanograting onto the Ga2O3 surface, which results in a 747-fold increase in responsivity in the SBUV region compared to a normal MSM grating-free structure. Metal gratings can induce surface plasmon polaritons (SPP), thereby augmenting the optical absorption of the PD and stimulating hot electrons to increase photocurrent. However, the broadband response caused by the introduction of metal gratings is a common problem. By optimizing the doping concentration of the Ga2O3 absorption layer, adjusting the incident light intensity, and reverse voltage, the problem of broadband response has been solved. The responsivity of the device in the non-SBUV region is suppressed 24-fold. This methodology holds promise as a reliable approach for fabricating high-performance SBUV-PDs.
Keyword ：
Ga2O3 Ga2O3 metal-semiconductor-metal (MSM) metal-semiconductor-metal (MSM) nanograting nanograting photodetector (PD) photodetector (PD) plasmon plasmon responsivity responsivity
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| GB/T 7714 | Li, Jialong , Yang, Dan , Lu, Xiaoqiang et al. Enhancing Ga2O3 Solar-Blind Photodetectors via Metal Nanogratings [J]. | IEEE SENSORS JOURNAL , 2025 , 25 (1) : 434-442 . |
| MLA | Li, Jialong et al. "Enhancing Ga2O3 Solar-Blind Photodetectors via Metal Nanogratings" . | IEEE SENSORS JOURNAL 25 . 1 (2025) : 434-442 . |
| APA | Li, Jialong , Yang, Dan , Lu, Xiaoqiang , Zhang, Haizhong , Zhu, Minmin . Enhancing Ga2O3 Solar-Blind Photodetectors via Metal Nanogratings . | IEEE SENSORS JOURNAL , 2025 , 25 (1) , 434-442 . |
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Aluminum alloys are renowned for their lightweight nature, resistance to oxidation, and impressive mechanical properties. Despite these advantages, their mechanical performance deteriorates significantly in extreme environments. Herein, we present an innovative solution by developing aluminum matrix composites (AMCs) that incorporate 3D printed alumina ceramic lattices. Our investigation demonstrates a remarkable 112.4 % increase in the strength of AMCs compared to pure aluminum, with a concurrent 54.8 % improvement in modulus under identical conditions. Additionally, as the volume fraction of the ceramic lattice varies from 0.21 to 0.45, the modulus of AMCs exhibits a noteworthy increase, ranging from 96.2 to 106.5 GPa, surpassing that of pure aluminum (68.8 GPa). Notably, even at temperatures of up to 300 degrees C, the strength of the Al2O3-Al composite matrix remains stable at 477.3 MPa. X-ray computed tomography analysis elucidates that the structural integrity of these composites predominantly relies on the load-bearing capacity of the ceramic lattices, complemented by the damping effect provided by the aluminum matrix. This innovative approach not only paves the way for scalable production of high-strength metal alloys in the industrial sector but also holds promise for substantial economic opportunities in the near future.
Keyword ：
Alumina lattice Alumina lattice Aluminum matrix composites Aluminum matrix composites Stereolithography 3D printing Stereolithography 3D printing Strength Strength X-ray computed tomography X-ray computed tomography
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| GB/T 7714 | Zhu, Minmin , Deng, Caozhuang , Zhang, Zhanfeng et al. Stereolithography 3D printing ceramics for ultrahigh strength aluminum matrix composites [J]. | JOURNAL OF MANUFACTURING PROCESSES , 2025 , 139 : 126-132 . |
| MLA | Zhu, Minmin et al. "Stereolithography 3D printing ceramics for ultrahigh strength aluminum matrix composites" . | JOURNAL OF MANUFACTURING PROCESSES 139 (2025) : 126-132 . |
| APA | Zhu, Minmin , Deng, Caozhuang , Zhang, Zhanfeng , Yang, Dan , Zhang, Haizhong , Wang, Linghua et al. Stereolithography 3D printing ceramics for ultrahigh strength aluminum matrix composites . | JOURNAL OF MANUFACTURING PROCESSES , 2025 , 139 , 126-132 . |
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High-performance electro-optic (EO) materials greatly enhance modulators and switches in various photonic applications. We investigate the evolution of the tolerance factor (t) and EO coefficient (rc) in A-site and B-site doped BaTiO3 (BT) thin films. Our analysis reveals that cation transmutation has a remarkable impact on their dielectric constant, spontaneous polarization, optical band gap, and EO coefficient. Notably, Pb-doped BT samples exhibit an even higher rc value of 336.5 pm/V, representing a nearly 60% increase compared to pure BT and approximately 11 times larger than that of LiNbO3. This substantial improvement in EO performance can be attributed to enhanced local structural heterogeneity resulting from cation dopants. Furthermore, infusing dopants in BT also result in good structural uniformity and reliable EO performances, regardless of temperature and frequency. Our study offers valuable insights into doping engineering for obtaining functional perovskite oxides, enabling the development of power-efficient, ultra-compact integrated nanophotonic devices.
Keyword ：
barium titanate barium titanate electro-optic electro-optic nanophotonic device nanophotonic device Pockels coefficient Pockels coefficient tolerance factor tolerance factor
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| GB/T 7714 | Zhu, Minmin , Zhang, Xianrong , Wei, Can et al. Chemical design of barium titanate thin films for nanophotonic devices [J]. | JOURNAL OF THE AMERICAN CERAMIC SOCIETY , 2024 , 107 (9) : 6263-6274 . |
| MLA | Zhu, Minmin et al. "Chemical design of barium titanate thin films for nanophotonic devices" . | JOURNAL OF THE AMERICAN CERAMIC SOCIETY 107 . 9 (2024) : 6263-6274 . |
| APA | Zhu, Minmin , Zhang, Xianrong , Wei, Can , Yi, Xiaoyuan , Yang, Dan , Zhang, Haizhong et al. Chemical design of barium titanate thin films for nanophotonic devices . | JOURNAL OF THE AMERICAN CERAMIC SOCIETY , 2024 , 107 (9) , 6263-6274 . |
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The next-generation computing system is required to perform 10(18) floating point operations per second to address the exponential growth of data from sensory terminals, driven by advancements in artificial intelligence and the Internet of Things. Even if a supercomputer possesses the capability to execute these operations, managing heat dissipation becomes a significant challenge when the electronic synapse array reaches a comparable scale with the human neuron network. One potential solution to address thermal hotspots in electronic devices is the use of vertically-aligned hexagonal boron nitride (h-BN) known for its high thermal conductivity. In this study, we have developed textured h-BN films using the high power impulse magnetron sputtering technique. The thermal conductivity of the oriented h-BN film is approximately 354% higher than that of the randomly oriented counterpart. By fabricating electronic synapses based on the textured h-BN thin film, we demonstrate various bio-synaptic plasticity in this device. Our results indicate that orientation engineering can effectively enable h-BN to function as a suitable self-heat dissipation layer, thereby paving the way for future wearable memory devices, solar cells, and neuromorphic devices.
Keyword ：
boron nitride boron nitride high thermal conductivity high thermal conductivity low-power memory low-power memory neuromorphic computing neuromorphic computing vertically-aligned vertically-aligned
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| GB/T 7714 | Zhang, Haizhong , Ju, Xin , Jiang, Haitao et al. Implementation of high thermal conductivity and synaptic metaplasticity in vertically-aligned hexagonal boron nitride-based memristor [J]. | SCIENCE CHINA-MATERIALS , 2024 , 67 (6) : 1907-1914 . |
| MLA | Zhang, Haizhong et al. "Implementation of high thermal conductivity and synaptic metaplasticity in vertically-aligned hexagonal boron nitride-based memristor" . | SCIENCE CHINA-MATERIALS 67 . 6 (2024) : 1907-1914 . |
| APA | Zhang, Haizhong , Ju, Xin , Jiang, Haitao , Yang, Dan , Wei, Rongshan , Hu, Wei et al. Implementation of high thermal conductivity and synaptic metaplasticity in vertically-aligned hexagonal boron nitride-based memristor . | SCIENCE CHINA-MATERIALS , 2024 , 67 (6) , 1907-1914 . |
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In this Letter, a high-quality and high-resistivity nitrogen (N)-doped Ga2O3 current blocking layer (CBL) is grown utilizing metal-organic chemical vapor deposition homoepitaxial technology. By using nitrous oxide (N2O) as oxygen source for Ga2O3 growth and N source for doping and controlling the growth temperature, the grown CBL can effectively achieve high (similar to 10(19) cm(-3)) or low (similar to 10(17) cm-3) N doping concentrations, as well as high crystal quality. Furthermore, the electrical properties of the developed CBL are verified at the device level, which shows that the device using the CBL can withstand bidirectional voltages exceeding 3.5 kV with very low leakage (<= 1 x 10(-4) A/cm2). This work can pave the way for the realization of high-voltage and low-leakage Ga2O3 vertical devices, especially metal-oxide-semiconductor field effect transistors.
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| GB/T 7714 | Xu, Xiaorui , Chen, Desen , Lu, Yaoping et al. Nitrogen-doped Ga2O3 current blocking layer using MOCVD homoepitaxy for high-voltage and low-leakage Ga2O3 vertical device fabrication [J]. | APPLIED PHYSICS LETTERS , 2024 , 125 (20) . |
| MLA | Xu, Xiaorui et al. "Nitrogen-doped Ga2O3 current blocking layer using MOCVD homoepitaxy for high-voltage and low-leakage Ga2O3 vertical device fabrication" . | APPLIED PHYSICS LETTERS 125 . 20 (2024) . |
| APA | Xu, Xiaorui , Chen, Desen , Lu, Yaoping , Li, Titao , Han, Xueli , Chen, Duanyang et al. Nitrogen-doped Ga2O3 current blocking layer using MOCVD homoepitaxy for high-voltage and low-leakage Ga2O3 vertical device fabrication . | APPLIED PHYSICS LETTERS , 2024 , 125 (20) . |
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Mainstream high-k gate materials, such as SiO2, Al2O3, and HfZrO2, are in demand for modern electronics. However, these dielectrics possess lower thermal conductivity, significantly limiting thermal dissipation in electronic devices. Herein, we propose the utilization of complementary metal-oxide semiconductor- (CMOS) compatible high power impulse magnetron sputtering (HiPIMS) for the mass production of highly textured hexagonal boron nitride (h-BN) on (100)-, (110)-, and (111)-oriented SrTiO3 substrates. The as-prepared films exhibit distinct vertical alignments, as evidenced by HRTEM and FTIR analysis. Notably, the R value, ranging from 0.46 to 0.50, is associated with the stress in the film. Importantly, distinct anisotropies in thermal conductivity, dielectric constant, and optical band gap are observed. Furthermore, the values of thermal conductivity in these highly textured h-BN films are 4.5, 5.7, and 5.3 Wm- 1K-1, which is almost three times larger than those of SiO2 (1.4 Wm- 1K-1) and Al2O3 (1.35 Wm- 1K-1), and even an order of magnitude larger than that of HfZrO2 (0.67 Wm- 1K-1). The combination of excellent dielectric characteristics, favorable thermal conductivity, and superior stability over a broad temperature range makes this novel material outperform conventional dielectric gate materials in high-power electronics applications.
Keyword ：
Boron nitride thin films Boron nitride thin films Dielectric dispersion Dielectric dispersion Highly textured Highly textured HiPIMS HiPIMS Self-dissipating electronics Self-dissipating electronics Thermal conductivity Thermal conductivity
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| GB/T 7714 | Zhu, Minmin , Shao, Yong , Xin, Yangmei et al. Anisotropic dielectric dispersions and thermal behaviors in highly textured BN thin films for heat self-dissipating electronics [J]. | VACUUM , 2024 , 225 . |
| MLA | Zhu, Minmin et al. "Anisotropic dielectric dispersions and thermal behaviors in highly textured BN thin films for heat self-dissipating electronics" . | VACUUM 225 (2024) . |
| APA | Zhu, Minmin , Shao, Yong , Xin, Yangmei , Yang, Dan , Lu, Xiaoqiang , Zhang, Haizhong . Anisotropic dielectric dispersions and thermal behaviors in highly textured BN thin films for heat self-dissipating electronics . | VACUUM , 2024 , 225 . |
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Improvements in phase stability and dielectric characteristics can broaden the applications of zirconia in ceramics. Herein, a series of Y2O3-stabilized zirconia (YSZ) ceramics are synthesized using solid-state sintering, followed by an investigation into their phase evolution, grain size, dielectric constant, and breaking field. As the Y2O3 content increases from 0 wt% to 4 wt%, the as-grown YSZ ceramics undergo a distinct phase transformation, transitioning from monoclinic to monoclinic + tetragonal and further to monoclinic + tetragonal + cubic, before finally returning to monoclinic + cubic. Significant changes occur in the internal microstructure and grain size of the ceramics as the phase composition alters, resulting in a reduction in grain size from 3.17 mu m to 0.27 mu m. Moreover, their dielectric constants exhibit an increasing trend as the Y2O3 content increases, rising from 3.92 to 13.2. Importantly, the dielectric breakdown field of these YSZ ceramics shows a similar variation to the phase evolution, ranging from 0.11 to 0.15 MV/cm. This study sheds light on the phase evolution and dielectric properties of YSZ ceramics, offering an efficient strategy for enhancing their dielectric performances.
Keyword ：
breaking field breaking field dielectric constant dielectric constant grain size grain size phase transformation phase transformation Y2O3-doped zirconia ceramics Y2O3-doped zirconia ceramics
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| GB/T 7714 | Gao, Lanfeng , Shao, Yong , Xin, Yangmei et al. Influence of Y2O3 Doping on Phase Evolution and Dielectric Characteristics of ZrO2 Ceramics [J]. | MICROMACHINES , 2024 , 15 (8) . |
| MLA | Gao, Lanfeng et al. "Influence of Y2O3 Doping on Phase Evolution and Dielectric Characteristics of ZrO2 Ceramics" . | MICROMACHINES 15 . 8 (2024) . |
| APA | Gao, Lanfeng , Shao, Yong , Xin, Yangmei , Yang, Dan , Zhang, Haizhong , Zhu, Minmin et al. Influence of Y2O3 Doping on Phase Evolution and Dielectric Characteristics of ZrO2 Ceramics . | MICROMACHINES , 2024 , 15 (8) . |
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Sensors, functioning as primary conveyors of perceptual data, stand ready to illuminate the landscape of the intelligent era. Barium titanate, an exceedingly pivotal class of ferroelectric materials for sensor applications, has attracted considerable attention from both commercial and industrial sectors in recent years. Against this backdrop, this paper embarks on a comprehensive examination of sensors founded upon barium titanate across a spectrum of applications. Our investigation commences with a historical analysis of ferroelectric materials, with a specific emphasis on the developmental trajectory of barium titanate. Subsequently, an in-depth exposition elucidates the attributes and manufacturing processes linked to barium titanate materials, providing readers with insight into the structural and manufacturing aspects of these materials. Ultimately, we introduce a diverse array of sensors tailored to distinct functions within a myriad of domains. With the progression of science and technology, sensors have evolved into indispensable components within the domain of artificial intelligence. This paper primarily undertakes a thorough examination of sensors utilizing barium titanate across a spectrum of applications. To commence, the properties and preparation of barium titanate are delineated, succeeded by an exploration of diverse sensor applications and the prospective developments. image
Keyword ：
barium titanate barium titanate ferroelectric ferroelectric piezoelectric piezoelectric pyroelectric pyroelectric sensor sensor
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| GB/T 7714 | Deng, Caozhuang , Zhang, Yi , Yang, Dan et al. Recent Progress on Barium Titanate-Based Ferroelectrics for Sensor Applications [J]. | ADVANCED SENSOR RESEARCH , 2024 , 3 (6) . |
| MLA | Deng, Caozhuang et al. "Recent Progress on Barium Titanate-Based Ferroelectrics for Sensor Applications" . | ADVANCED SENSOR RESEARCH 3 . 6 (2024) . |
| APA | Deng, Caozhuang , Zhang, Yi , Yang, Dan , Zhang, Haizhong , Zhu, Minmin . Recent Progress on Barium Titanate-Based Ferroelectrics for Sensor Applications . | ADVANCED SENSOR RESEARCH , 2024 , 3 (6) . |
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In this work, a novel gallium oxide (Ga2O3) vertical FinFET with integrated Schottky barrier diode (SBD-FinFET), which achieves low conduction losses, is proposed. In the reverse conduction state, the integrated SBD can provide additional low-resistance path to conduct reverse current, hence achieving low reverse conduction loss. In the switching state, the SBD-FinFET can also reduce gate-drain capacitance and gate charge, thus featuring fast switching speed and low switching losses. Furthermore, in the other states, the integrated SBD of the SBD-FinFET is in the OFF state, which does not significantly affect the device characteristics. The well-calibrated simulation results show that when compared with the state-of-the-art FinFET with integrated Fin channel and ohmic contact diode (FOD-FinFET), the SBD-FinFET can reduce reverse conduction loss, turn-on loss, and turn-off loss by 25%, 19%, and 22%, respectively, while other characteristics retain almost unchanged.
Keyword ：
beta-gallium oxide (Ga2O3) beta-gallium oxide (Ga2O3) conduction losses conduction losses Electric breakdown Electric breakdown Field effect transistors Field effect transistors FinFET FinFET FinFETs FinFETs Gallium Gallium Logic gates Logic gates Schottky barrier diode (SBD) Schottky barrier diode (SBD) Schottky barriers Schottky barriers Schottky diodes Schottky diodes
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| GB/T 7714 | Xu, Xiaorui , Deng, Yicong , Li, Titao et al. Ga2O3 Vertical FinFET With Integrated Schottky Barrier Diode for Low-Loss Conduction [J]. | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2024 , 71 (4) : 2530-2535 . |
| MLA | Xu, Xiaorui et al. "Ga2O3 Vertical FinFET With Integrated Schottky Barrier Diode for Low-Loss Conduction" . | IEEE TRANSACTIONS ON ELECTRON DEVICES 71 . 4 (2024) : 2530-2535 . |
| APA | Xu, Xiaorui , Deng, Yicong , Li, Titao , Xu, Xiaohui , Yang, Dan , Zhu, Minmin et al. Ga2O3 Vertical FinFET With Integrated Schottky Barrier Diode for Low-Loss Conduction . | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2024 , 71 (4) , 2530-2535 . |
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