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学者姓名：阮敦宝
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Abstract ：
In order to improve the electrical characteristics of Ge n- and p-channel FET simultaneously, an interfacial layer (IL) engineering is proposed on Ge nFinFET, pFinFET, and CMOS inverter by using an alloy-like IL with about 10% oxidation. Thanks to trade-off balance between alloy-like and oxygen-rich IL with a suitable oxidation process, both Ge nFinFET and pFinFET exhibit lower EOT value, lower leakage current, fewer border trap, lower DIT value, lower S.S. value, larger ION/IOFF, higher drive current, better reliability characteristics, more symmetrical VOUT-VIN and higher peak voltage gain.
Keyword ：
alloy-like interfacial layer alloy-like interfacial layer Degradation Degradation FinFETs FinFETs Ge CMOS inverter Ge CMOS inverter Ge FinFET Ge FinFET Germanium Germanium hafnium nitride hafnium nitride in-situ post plasma oxidation in-situ post plasma oxidation interfacial layer engineering interfacial layer engineering Inverters Inverters MOS capacitors MOS capacitors MOSFET circuits MOSFET circuits Oxidation Oxidation Silicon Silicon Thermal stability Thermal stability Voltage Voltage
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| GB/T 7714 | Ruan, Dun-Bao , Chang-Liao, Kuei-Shu , Li, Cheng-Han et al. Simultaneously Improved Electrical Characteristics of Ge n/p-FinFETs and Inverter With Oxidized Alloy-Like Hafnium Nitride Interfacial Layer [J]. | IEEE ELECTRON DEVICE LETTERS , 2025 , 46 (2) : 254-257 . |
| MLA | Ruan, Dun-Bao et al. "Simultaneously Improved Electrical Characteristics of Ge n/p-FinFETs and Inverter With Oxidized Alloy-Like Hafnium Nitride Interfacial Layer" . | IEEE ELECTRON DEVICE LETTERS 46 . 2 (2025) : 254-257 . |
| APA | Ruan, Dun-Bao , Chang-Liao, Kuei-Shu , Li, Cheng-Han , Zhao, Zefu , Gan, Kai-Jhih . Simultaneously Improved Electrical Characteristics of Ge n/p-FinFETs and Inverter With Oxidized Alloy-Like Hafnium Nitride Interfacial Layer . | IEEE ELECTRON DEVICE LETTERS , 2025 , 46 (2) , 254-257 . |
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This work demonstrates a low thermal budget amorphous InWO (alpha-IWO) thin film transistor (TFT) achieving a subthreshold swing (S.S.) of 40 mV/decade without utilizing a ferroelectric gate oxide. The oxygen vacancies in alpha-IWO induce the formation of an interfacial dipole layer at the surface between alpha-IWO and SiO2/HfO2. The TFT with dipole-rich interface exhibits the S.S. value below 60 mV/decade over 2 decades of drain current. X-ray diffraction (XRD) confirmed the absence of the ferroelectric orthorhombic phase in the HfO2 layer. Besides, the low thermal budget alpha-IWO TFT also exhibits a high field effect mobility of 97 cm(2)/Vs and a large on/off current ratio of 1.8E6, while the process temperature is as low as 300 degrees C.
Keyword ：
alpha-InWO alpha-InWO Annealing Annealing Capacitors Capacitors Hafnium oxide Hafnium oxide high-k engineering high-k engineering Hysteresis Hysteresis interfacial dipole layer interfacial dipole layer Logic gates Logic gates Negative capacitance-like Negative capacitance-like oxygen vacancy oxygen vacancy steep subthreshold swing steep subthreshold swing Stress Stress Thermal stability Thermal stability thin film transistor thin film transistor Thin film transistors Thin film transistors Transistors Transistors X-ray scattering X-ray scattering
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| GB/T 7714 | Zhao, Zefu , Gan, Kai-Jhih , Pan, Shenglin et al. Dipole-Enhanced Low Thermal Budget Amorphous InWO TFT Achieving a Steep Subthreshold Swing of 40 mV/Decade Without Ferroelectric Layer [J]. | IEEE ELECTRON DEVICE LETTERS , 2025 , 46 (3) : 436-439 . |
| MLA | Zhao, Zefu et al. "Dipole-Enhanced Low Thermal Budget Amorphous InWO TFT Achieving a Steep Subthreshold Swing of 40 mV/Decade Without Ferroelectric Layer" . | IEEE ELECTRON DEVICE LETTERS 46 . 3 (2025) : 436-439 . |
| APA | Zhao, Zefu , Gan, Kai-Jhih , Pan, Shenglin , Wang, Shaohao , Li, Tiaoyang , Ruan, Dun-Bao . Dipole-Enhanced Low Thermal Budget Amorphous InWO TFT Achieving a Steep Subthreshold Swing of 40 mV/Decade Without Ferroelectric Layer . | IEEE ELECTRON DEVICE LETTERS , 2025 , 46 (3) , 436-439 . |
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A HfO2/ZrO2/HfO2 (HZH) high-k stack with adequate ZrO2 thickness ratio is proposed as dielectric in metal-insulator-metal (MIM) capacitor for dynamic random access memory (DRAM) applications. The dielectric constant (k) of 43 is achieved when the ZrO2 thickness ratio is 73%. An equivalent oxide thickness (EOT) of 0.46 nm and leakage current density (J(g)) of 9.4 x 10(-5) A/cm(2) are simultaneously achieved with a total HZH physical thickness (T-ox) of 5 nm. The leakage current may be caused by the interface traps at the HZH multi-interface structure, as well as the oxygen vacancies inside HfO2 and ZrO2. To suppress J(g), a NH3 plasma treatment was in situ conducted during atomic layer deposition (ALD) processes of HZH deposition. Through nitrogen incorporation with in situ NH3 plasma treatment, the oxygen vacancies can be passivated, and Zr-O-N bonds would be formed at the interface to suppress the formation of interface traps. The sample with an in situ NH3 plasma treatment at the interface between ZrO2 and top HfO2 (ZN) can obtain a reduction in leakage current density by 48% when compared with those without ZN, while maintaining the capacitance density (C) at a similar value of around 7.4 mu F/cm(2) . The approaches of HZH stack and in situ plasma treatment for MIM capacitor are promising to the cell in DRAM technology.
Keyword ：
Atomic layer deposition (ALD) Atomic layer deposition (ALD) dynamic random access memory (DRAM) dynamic random access memory (DRAM) HfO2/ZrO2/HfO2 (HZH) high-k stack HfO2/ZrO2/HfO2 (HZH) high-k stack in situ plasma treatment in situ plasma treatment metal-insulator- metal (MIM) metal-insulator- metal (MIM)
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| GB/T 7714 | Wu, Huan , Ruan, Dun-Bao , Chang-Liao, Kuei-Shu . MIM Capacitors Featuring Low EOT and Low Leakage Current Density by Nitrogen- Incorporated HfO2/ZrO2/HfO2 [J]. | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2024 , 71 (10) : 6027-6031 . |
| MLA | Wu, Huan et al. "MIM Capacitors Featuring Low EOT and Low Leakage Current Density by Nitrogen- Incorporated HfO2/ZrO2/HfO2" . | IEEE TRANSACTIONS ON ELECTRON DEVICES 71 . 10 (2024) : 6027-6031 . |
| APA | Wu, Huan , Ruan, Dun-Bao , Chang-Liao, Kuei-Shu . MIM Capacitors Featuring Low EOT and Low Leakage Current Density by Nitrogen- Incorporated HfO2/ZrO2/HfO2 . | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2024 , 71 (10) , 6027-6031 . |
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A novel plasma-enhanced supercritical phase fluid (SCF) process is proposed on a Ge FinFET CMOS inverter to resolve the insufficient oxidation in large-size chamber and unavailable nitridation effects with a SCF system. The metastable low oxidation states and interface traps in high-k and interfacial layer are clearly reduced by the supplemented oxygen and nitrogen radicals in SCF. As a result, Ge FinFET with enhanced oxidation and partially nitridation (EOPN)-SCF treatment exhibits an EOT value of 0.66 nm, drive current of 2.6 mA/mu m (@V-OV = 1V), leakage current of 0.3 nA/mu m, I-ON/I-OFF of 7 x 10(5), S.S. value of 88 mV/dec, D-IT of 3x10(11) cm(-2)eV(-1), fewer border traps, better reliability characteristics, more symmetrical V-IN-V-OUT and peak voltage gain of 58 V/V for CMOS inverter.
Keyword ：
CMOS inverter CMOS inverter Ge FinFET Ge FinFET plasma-enhanced oxidation plasma-enhanced oxidation plasma-enhanced oxidation and partial nitridation plasma-enhanced oxidation and partial nitridation supercritical fluid treatment supercritical fluid treatment
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| GB/T 7714 | Ruan, Dun-Bao , Chang-Liao, Kuei-Shu , Yang, Kai-Chun et al. Improved Electrical Characteristics of Ge FinFET CMOS by Plasma-Enhanced Oxidation and Partial Nitridation With Supercritical Fluid Treatment [J]. | IEEE ELECTRON DEVICE LETTERS , 2024 , 45 (12) : 2276-2279 . |
| MLA | Ruan, Dun-Bao et al. "Improved Electrical Characteristics of Ge FinFET CMOS by Plasma-Enhanced Oxidation and Partial Nitridation With Supercritical Fluid Treatment" . | IEEE ELECTRON DEVICE LETTERS 45 . 12 (2024) : 2276-2279 . |
| APA | Ruan, Dun-Bao , Chang-Liao, Kuei-Shu , Yang, Kai-Chun , Gan, Kai-Jhih . Improved Electrical Characteristics of Ge FinFET CMOS by Plasma-Enhanced Oxidation and Partial Nitridation With Supercritical Fluid Treatment . | IEEE ELECTRON DEVICE LETTERS , 2024 , 45 (12) , 2276-2279 . |
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Abstract ：
A post plasma oxidation and nitridation (PPON) treatment before supercritical phase fluid (SCF) process is proposed on high-k gate stacks of Ge FinFET. Due to the reduction of border and interface traps in gate dielectric, both Ge nFinFET and pFinFET with PPON+SCF treatment exhibit higher ION, lower IOFF, larger ION/IOFF, lower S.S. value and DIT value.
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| GB/T 7714 | Hung, Wei-Chen , Ruan, Dun-Bao , Chang-Liao, Kuei-Shu et al. High Performance Ge FinFET CMOS Invertor with Post Plasma Oxidation and Nitridation Treatments before Supercritical Fluid Process [J]. | 2024 IEEE SILICON NANOELECTRONICS WORKSHOP, SNW 2024 , 2024 : 131-132 . |
| MLA | Hung, Wei-Chen et al. "High Performance Ge FinFET CMOS Invertor with Post Plasma Oxidation and Nitridation Treatments before Supercritical Fluid Process" . | 2024 IEEE SILICON NANOELECTRONICS WORKSHOP, SNW 2024 (2024) : 131-132 . |
| APA | Hung, Wei-Chen , Ruan, Dun-Bao , Chang-Liao, Kuei-Shu , Yang, Kai-Chun . High Performance Ge FinFET CMOS Invertor with Post Plasma Oxidation and Nitridation Treatments before Supercritical Fluid Process . | 2024 IEEE SILICON NANOELECTRONICS WORKSHOP, SNW 2024 , 2024 , 131-132 . |
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An ozone-based plasma pretreatment was proposed to reduce the oxygen vacancy and unstable germanium (Ge) suboxide (GeOx) at lower interface of interfacial layer (IL). With higher oxidizing ability of ozone and lower plasma damage in process, the formation of unstable GeO(x )at lower interface of IL can be effectively suppressed. The devices with a mixed hydrogen and ozone plasma (MHOP) pretreatment exhibit an ultrathin equivalent oxide thickness (EOT) of 0.57 nm, a fairly acceptable gate leakage current density of 3 x 10(-3)A/cm(2), lower interface trap density of 10(11 )cm(-2)eV(-1), and fewer border traps inGe MOS capacitor. Also, a higher driver current of 1.4 mA, a lower subthreshold swing (SS) of 113 mV/dec, and higher ON/OFF current ratio of 3.2 x 10(3 )for Ge MOSFET can be achieved with an MHOP treatment.
Keyword ：
Atoms Atoms Equivalent oxide thickness (EOT) Equivalent oxide thickness (EOT) Gases Gases Germanium Germanium germanium (Ge) nMOSFET germanium (Ge) nMOSFET Hydrogen Hydrogen in situ plasma treatment in situ plasma treatment Logic gates Logic gates MOSFET MOSFET MOSFET circuits MOSFET circuits Oxidation Oxidation oxidation state engineering oxidation state engineering ozone treatment ozone treatment Plasmas Plasmas Voltage Voltage
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| GB/T 7714 | Ruan, Dun-Bao , Chang-Liao, Kuei-Shu , Wu, Huan et al. Oxidation State Modification in Gate Dielectric for Ge nMOSFET With Mixed Hydrogen and Ozone Plasma Pretreatments [J]. | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2024 , 72 (1) : 57-61 . |
| MLA | Ruan, Dun-Bao et al. "Oxidation State Modification in Gate Dielectric for Ge nMOSFET With Mixed Hydrogen and Ozone Plasma Pretreatments" . | IEEE TRANSACTIONS ON ELECTRON DEVICES 72 . 1 (2024) : 57-61 . |
| APA | Ruan, Dun-Bao , Chang-Liao, Kuei-Shu , Wu, Huan , Chu, Fu-Yang , Wu, Po-Chun , Zhao, Zefu et al. Oxidation State Modification in Gate Dielectric for Ge nMOSFET With Mixed Hydrogen and Ozone Plasma Pretreatments . | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2024 , 72 (1) , 57-61 . |
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A rapid remote plasma oxidation (RRPO) treatment was applied on the alloy-like oxygen-adsorbing hafnium nitride interfacial layer in Ge nMOSFET device. The sample with a RRPO treatment for 10 s exhibits lower EOT, J(G), D-IT, S. S. values, narrower frequency dispersion, higher I-ON/I-OFF, ION and G(m) values, due to the reduction of border trap and oxygen vacancy.
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| GB/T 7714 | Liu, Jia-Cheng , Ruan, Dun-Bao , Chang-Liao, Kuei-Shu et al. Enhanced Electrical Performance of Ge nMOSFET with Rapid Remote Plasma Oxidation Treatment [J]. | 2023 SILICON NANOELECTRONICS WORKSHOP, SNW , 2023 : 73-74 . |
| MLA | Liu, Jia-Cheng et al. "Enhanced Electrical Performance of Ge nMOSFET with Rapid Remote Plasma Oxidation Treatment" . | 2023 SILICON NANOELECTRONICS WORKSHOP, SNW (2023) : 73-74 . |
| APA | Liu, Jia-Cheng , Ruan, Dun-Bao , Chang-Liao, Kuei-Shu , Liu, Guan-Ting . Enhanced Electrical Performance of Ge nMOSFET with Rapid Remote Plasma Oxidation Treatment . | 2023 SILICON NANOELECTRONICS WORKSHOP, SNW , 2023 , 73-74 . |
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A novel Ge condensation process using low temperature supercritical phase fluid (SCF) was proposed on SiGe/Si GAAFET. Device with a Ge condensation by SCF treatment exhibits higher I-ON, lower I-OFF, larger I-ON/I-OFF, lower S.S., higher uniformity and better reliability, due to the enhanced mobility by the reduction of vacancy defects in SiGe and interface traps or/and reversed tensile strain in Si.
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| GB/T 7714 | Chen, Wei-Ren , Ruan, Dun-Bao , Chang-Liao, Kuei-Shu et al. Enhanced Performance for SiGe/Si Gate-All-Around Field-Effect-Transistor with Ge Condensation Using Supercritical Fluid Treatment [J]. | 2023 SILICON NANOELECTRONICS WORKSHOP, SNW , 2023 : 25-26 . |
| MLA | Chen, Wei-Ren et al. "Enhanced Performance for SiGe/Si Gate-All-Around Field-Effect-Transistor with Ge Condensation Using Supercritical Fluid Treatment" . | 2023 SILICON NANOELECTRONICS WORKSHOP, SNW (2023) : 25-26 . |
| APA | Chen, Wei-Ren , Ruan, Dun-Bao , Chang-Liao, Kuei-Shu , Wang, Hao-Yan , Luo, Guang-Li , Chiu, Yu-Chuan et al. Enhanced Performance for SiGe/Si Gate-All-Around Field-Effect-Transistor with Ge Condensation Using Supercritical Fluid Treatment . | 2023 SILICON NANOELECTRONICS WORKSHOP, SNW , 2023 , 25-26 . |
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A high performance Ge FinFET CMOS invertor with ION=2 m Lambda/mu m at V-ov =1V, S.S.=64 mV/dec, I-ON/I-OFF=2.5x10(6), and voltage gain=90 v/v is achieved by a high pressure supercritical fluid hydroxide oxidation, due to the reduced unstable oxidation states and oxygen vacancy.
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| GB/T 7714 | Wu, Cheng-Yu , Ruan, Dun-Bao , Chang-Liao, Kuei-Shu et al. High Performance Ge FinFET CMOS Invertor with I-ON=2.0 mA/mu m at V-ov=1V, SS=64 MV/dec, I-ON/I-OFF=2.5x10(6), and Voltage Gain=90 V/V by Using High Pressure Supercritical Fluid Hydroxide Oxidation [J]. | 2023 SILICON NANOELECTRONICS WORKSHOP, SNW , 2023 : 23-24 . |
| MLA | Wu, Cheng-Yu et al. "High Performance Ge FinFET CMOS Invertor with I-ON=2.0 mA/mu m at V-ov=1V, SS=64 MV/dec, I-ON/I-OFF=2.5x10(6), and Voltage Gain=90 V/V by Using High Pressure Supercritical Fluid Hydroxide Oxidation" . | 2023 SILICON NANOELECTRONICS WORKSHOP, SNW (2023) : 23-24 . |
| APA | Wu, Cheng-Yu , Ruan, Dun-Bao , Chang-Liao, Kuei-Shu , Lee, Yao-Jen , Chiu, Yu-Chuan , Liu, Chih-Wei et al. High Performance Ge FinFET CMOS Invertor with I-ON=2.0 mA/mu m at V-ov=1V, SS=64 MV/dec, I-ON/I-OFF=2.5x10(6), and Voltage Gain=90 V/V by Using High Pressure Supercritical Fluid Hydroxide Oxidation . | 2023 SILICON NANOELECTRONICS WORKSHOP, SNW , 2023 , 23-24 . |
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Abstract ：
A rapid remote plasma oxidation (RRPO) treatment was applied on the alloy-like oxygen-adsorbing hafnium nitride interfacial layer in Ge nMOSFET device. The sample with a RRPO treatment for 10 s exhibits lower EOT, JG,DIT , S.S. values, narrower frequency dispersion, higher ION/IOFF,ION and Gm values, due to the reduction of border trap and oxygen vacancy. © 2023 JSAP.
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| GB/T 7714 | Liu, J.-C. , Ruan, D.-B. , Chang-Liao, K.-S. et al. Enhanced Electrical Performance of Ge nMOSFET with Rapid Remote Plasma Oxidation Treatment [未知]. |
| MLA | Liu, J.-C. et al. "Enhanced Electrical Performance of Ge nMOSFET with Rapid Remote Plasma Oxidation Treatment" [未知]. |
| APA | Liu, J.-C. , Ruan, D.-B. , Chang-Liao, K.-S. , Liu, G.-T. . Enhanced Electrical Performance of Ge nMOSFET with Rapid Remote Plasma Oxidation Treatment [未知]. |
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