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学者姓名：王少昊
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Abstract ：
This work demonstrates a low thermal budget amorphous InWO (alpha-IWO) thin film transistor (TFT) achieving a subthreshold swing (S.S.) of 40 mV/decade without utilizing a ferroelectric gate oxide. The oxygen vacancies in alpha-IWO induce the formation of an interfacial dipole layer at the surface between alpha-IWO and SiO2/HfO2. The TFT with dipole-rich interface exhibits the S.S. value below 60 mV/decade over 2 decades of drain current. X-ray diffraction (XRD) confirmed the absence of the ferroelectric orthorhombic phase in the HfO2 layer. Besides, the low thermal budget alpha-IWO TFT also exhibits a high field effect mobility of 97 cm(2)/Vs and a large on/off current ratio of 1.8E6, while the process temperature is as low as 300 degrees C.
Keyword ：
alpha-InWO alpha-InWO Annealing Annealing Capacitors Capacitors Hafnium oxide Hafnium oxide high-k engineering high-k engineering Hysteresis Hysteresis interfacial dipole layer interfacial dipole layer Logic gates Logic gates Negative capacitance-like Negative capacitance-like oxygen vacancy oxygen vacancy steep subthreshold swing steep subthreshold swing Stress Stress Thermal stability Thermal stability thin film transistor thin film transistor Thin film transistors Thin film transistors Transistors Transistors X-ray scattering X-ray scattering
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| GB/T 7714 | Zhao, Zefu , Gan, Kai-Jhih , Pan, Shenglin et al. Dipole-Enhanced Low Thermal Budget Amorphous InWO TFT Achieving a Steep Subthreshold Swing of 40 mV/Decade Without Ferroelectric Layer [J]. | IEEE ELECTRON DEVICE LETTERS , 2025 , 46 (3) : 436-439 . |
| MLA | Zhao, Zefu et al. "Dipole-Enhanced Low Thermal Budget Amorphous InWO TFT Achieving a Steep Subthreshold Swing of 40 mV/Decade Without Ferroelectric Layer" . | IEEE ELECTRON DEVICE LETTERS 46 . 3 (2025) : 436-439 . |
| APA | Zhao, Zefu , Gan, Kai-Jhih , Pan, Shenglin , Wang, Shaohao , Li, Tiaoyang , Ruan, Dun-Bao . Dipole-Enhanced Low Thermal Budget Amorphous InWO TFT Achieving a Steep Subthreshold Swing of 40 mV/Decade Without Ferroelectric Layer . | IEEE ELECTRON DEVICE LETTERS , 2025 , 46 (3) , 436-439 . |
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无片外电容低压差线性稳压器(Low-Dropout Regulator,LDO)具有输出纹波小、集成度高等优势.为了克服仅将运算放大器作为误差放大器(Error Amplifier,EA)时LDO瞬态响应较慢的问题,可在运算放大器后级联多级反相器并增加输出反馈电容来改善EA的响应速度.但是当多级反相器仅采用标准阈值电压晶体管时,该EA方案中的静态功耗较高且在瞬态响应期间晶体管容易进线性区.本文提出一种采用混合阈值两级反相器的无片外电容LDO结构,通过在末级反相器中采用高阈值电压晶体管替代相同尺寸的标准阈值晶体管,能够将静态电流降低 75%的同时仅损失约 20%的瞬态响应性能.此外,设计中还加入了阈值电压修调(Threshold Voltage Modulation,TVM)模块,避免高阈值电压晶体管在瞬态响应过程中关断.本文采用SMIC 55nmCMOS工艺对提出的LDO设计进行了仿真.结果表明,该LDO设计在输入、输出电压分别为1.2 V和1.1 V时,整体静态电流仅10 μA,实现了低功耗性能.当负载电流在 30 ns内发生了 20 mA的跳变时,其输出上冲电压为 36 mV,恢复时间为 36 ns.此外,该LDO的线性和负载调整率分别为 0.17 mV/V和 0.2 μV/mA,低频时电源抑制比为-98 dB.
Keyword ：
低压差线性稳压器 低压差线性稳压器 低静态电流 低静态电流 快速瞬态响应 快速瞬态响应 混合阈值反相器 混合阈值反相器
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| GB/T 7714 | 盛祥和 , 郭少威 , 卢杨 et al. 基于混合阈值反相器的低功耗无片外电容LDO [J]. | 微电子学与计算机 , 2025 , 42 (2) : 120-127 . |
| MLA | 盛祥和 et al. "基于混合阈值反相器的低功耗无片外电容LDO" . | 微电子学与计算机 42 . 2 (2025) : 120-127 . |
| APA | 盛祥和 , 郭少威 , 卢杨 , 陈龙 , 杨业成 , 王少昊 . 基于混合阈值反相器的低功耗无片外电容LDO . | 微电子学与计算机 , 2025 , 42 (2) , 120-127 . |
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Chiral noncollinear magnetic nanostructures, such as skyrmions, are intriguing spin configurations with significant potential for magnetic memory technologies. However, the limited availability of 2D magnetic materials that host skyrmions with Curie temperatures above room temperature presents a major challenge for practical implementation. Chromium tellurides exhibit diverse spin configurations and remarkable stability under ambient conditions, making them a promising platform for fundamental spin physics research and the development of innovative 2D spintronic devices. Here, domain structures of Cr0.85Te nanoflakes synthesized via chemical vapor deposition are investigated, using magnetic force microscopy at room temperature. The results reveal that the domain width of the as-grown nanoflakes scales with the square root of their thicknesses. Notably, the emergence and annihilation of skyrmions are observed, which can be reversibly controlled by external magnetic fields and thermal excitation in ambient air. Micromagnetic simulations suggest that the emergence of skyrmions in Cr0.85Te nanoflakes arises from inversion symmetry breaking due to compositional gradients across the sample thickness, rather than the interfacial Dzyaloshinskii-Moriya interaction. These findings provide new insights into the mechanisms underlying skyrmion formation in 2D ferromagnets and open exciting possibilities for manipulating domain structures at room temperature, offering practical pathways for developing next-generation spintronic devices.
Keyword ：
Cr0.85Te nanoflakes Cr0.85Te nanoflakes magnetic domain evolution magnetic domain evolution magnetic force microscopy magnetic force microscopy room temperature 2D ferromagnetic room temperature 2D ferromagnetic skyrmions skyrmions
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| GB/T 7714 | Ni, Yan , Guo, Yongxiang , Jiang, Yuan-Yuan et al. Emergent Skyrmions in Cr0.85Te nanoflakes at Room Temperature [J]. | SMALL , 2024 , 21 (5) . |
| MLA | Ni, Yan et al. "Emergent Skyrmions in Cr0.85Te nanoflakes at Room Temperature" . | SMALL 21 . 5 (2024) . |
| APA | Ni, Yan , Guo, Yongxiang , Jiang, Yuan-Yuan , Huang, Ting , Mu, Qiuxuan , Hou, Feiyan et al. Emergent Skyrmions in Cr0.85Te nanoflakes at Room Temperature . | SMALL , 2024 , 21 (5) . |
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随着新一轮科技革命和产业变革的加速演进,特别是 5G、人工智能、物联网、虚拟现实/增强现实和高性能计算等技术的快速发展,集成电路产业已成为全球技术竞争的焦点.作为集成电路设计领域的顶级国际会议,国际固态电路会议(ISSCC)汇聚了全球最前沿的技术成果.本文对近 5 年ISSCC中国内地和港澳地区论文接收情况进行梳理,并对 2024 年研究成果进行深入分析,涵盖作者背景、研究机构、基金支持、合作情况以及研究趋势等.此外,对这些论文的核心内容进行了翻译和整理,旨在为国内集成电路领域的研究人员提供最新的技术洞察,进而激发创新思维,推动产业进步.
Keyword ：
ISSCC ISSCC 技术洞察 技术洞察 研究趋势 研究趋势 集成电路 集成电路
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| GB/T 7714 | 杨业成 , 王少昊 . ISSCC 2024论文技术热点分析 [J]. | 微纳电子与智能制造 , 2024 , 6 (2) : 1-31 . |
| MLA | 杨业成 et al. "ISSCC 2024论文技术热点分析" . | 微纳电子与智能制造 6 . 2 (2024) : 1-31 . |
| APA | 杨业成 , 王少昊 . ISSCC 2024论文技术热点分析 . | 微纳电子与智能制造 , 2024 , 6 (2) , 1-31 . |
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针对SoC中电源管理模块对高功能一面积比和高瞬态响应的需求,本文提出一种基于翻转电压跟随器(FVF)的无片外电容低压差线性稳压器(LDO),采用电压峰值检测技术实现动态电流偏置,进而提升系统瞬态响应.基于SMIC 40nm工艺的仿真结果表明,在典型负载切换状态下,提出方案的下冲和上冲恢复时间相比传统的FVF结构LDO电路分别缩短了 75％和29％.
Keyword ：
无片外电容LDO 无片外电容LDO 线性稳压器 线性稳压器 翻转电压跟随器 翻转电压跟随器 高瞬态响应 高瞬态响应
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| GB/T 7714 | 陈俊杰 , 袁磊 , 陈子杰 et al. 一种无片外电容高瞬态响应LDO设计 [J]. | 中国集成电路 , 2023 , 32 (3) : 26-30,64 . |
| MLA | 陈俊杰 et al. "一种无片外电容高瞬态响应LDO设计" . | 中国集成电路 32 . 3 (2023) : 26-30,64 . |
| APA | 陈俊杰 , 袁磊 , 陈子杰 , 王少昊 . 一种无片外电容高瞬态响应LDO设计 . | 中国集成电路 , 2023 , 32 (3) , 26-30,64 . |
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A broadband and CMOS-compatible polarization beam splitter and rotator (PSR) built on the silicon nitride -on-silicon multilayer platform is presented. The PSR is realized by cascading a polarization beam splitter and a polarization rotator, which are both subtly constructed with an asymmetrical directional coupler waveguide struc-ture. The advantage of this device is that the function of PSR can be directly realized in the SiN layer, providing a promising solution to the polarization diversity schemes in SiN photonic circuits. The chip is expected to have high power handling capability as the light is input from the SiN waveguide. The use of silicon dioxide as the upper cladding of the device ensures its compatibility with the metal back-end-of-line process. By optimizing the struc-ture parameters, a polarization conversion loss lower than 1 dB and cross talk larger than 27.6 dB can be obtained for TM-TE mode conversion over a wavelength range of 1450 to 1600 nm. For TE mode, the insertion loss is lower than 0.26 dB and cross talk is larger than 25.3 dB over the same wavelength range. The proposed device has good potential in diversifying the functionalities of the multilayer photonic chip with high integration density.(c) 2023 Optica Publishing Group
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| GB/T 7714 | Wang, Linghua , Peng, Hejie , Zheng, Langteng et al. Broadband and CMOS-compatible polarization splitter and rotator built on a silicon nitride-on-silicon multilayer platform [J]. | APPLIED OPTICS , 2023 , 62 (4) : 1046-1056 . |
| MLA | Wang, Linghua et al. "Broadband and CMOS-compatible polarization splitter and rotator built on a silicon nitride-on-silicon multilayer platform" . | APPLIED OPTICS 62 . 4 (2023) : 1046-1056 . |
| APA | Wang, Linghua , Peng, Hejie , Zheng, Langteng , Chen, Huaixi , Zhang, Yazhen , Huang, Jiwei et al. Broadband and CMOS-compatible polarization splitter and rotator built on a silicon nitride-on-silicon multilayer platform . | APPLIED OPTICS , 2023 , 62 (4) , 1046-1056 . |
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A compact and broadband polarization beam splitter (PBS) based on silicon (Si) nitride (SiN)-on-Si-on-insulator multilayer platform with vertical asymmetrical directional coupler (ADC) is designed and analyzed. The vertical ADC is consisted of two waveguides, which are placed in the bottom Si layer and upper SiN layer separately. It is found that by properly choosing the values of the structure parameters, especially taking advantages of the extra freedom of the relative location between these two waveguides, the performance of the PBS can be significantly improved. By incorporating tapered structures into the coupling region in the further step, bandwidth of 294 nm, which is determined by the insertion loss of <1 dB and the extinction ratio of >20 dB in both polarizations, is realized within a coupling length as compact as 6.9 mu m. The proposed device has a good potential to be applied in three-dimensional photonic integration, where higher integration density or more on-chip functions can be realized.
Keyword ：
photonic integration photonic integration polarization beam splitter polarization beam splitter silicon photonics silicon photonics vertical asymmetrical directional coupler vertical asymmetrical directional coupler
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| GB/T 7714 | Peng, Hejie , Zheng, Langteng , Zhang, Yazhen et al. Design and analysis of a compact and broadband polarization beam splitter on silicon nitride on silicon-on-insulator multilayer platform using a partially overlapped vertical asymmetrical directional coupler [J]. | OPTICAL ENGINEERING , 2023 , 62 (12) . |
| MLA | Peng, Hejie et al. "Design and analysis of a compact and broadband polarization beam splitter on silicon nitride on silicon-on-insulator multilayer platform using a partially overlapped vertical asymmetrical directional coupler" . | OPTICAL ENGINEERING 62 . 12 (2023) . |
| APA | Peng, Hejie , Zheng, Langteng , Zhang, Yazhen , Huang, Jiwei , Wei, Rongshan , Wang, Shaohao et al. Design and analysis of a compact and broadband polarization beam splitter on silicon nitride on silicon-on-insulator multilayer platform using a partially overlapped vertical asymmetrical directional coupler . | OPTICAL ENGINEERING , 2023 , 62 (12) . |
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The effect of a lower index oxide layer inclusion within a highly doped silica glass slot waveguide is investigated for optimized supercontinuum generation at telecom wavelengths. By controlling the thickness of the oxide slot, it is demonstrated that one can engineer the waveguide dispersion profile in order to obtain supercontinua with vastly different spectral broadening dynamics and bandwidths. Using this approach, a waveguide with a low and flat dispersion profile of less than 43 pskm-1nm-1$\rm ps\ km<^>{-1}\ nm<^>{-1}$ across a wavelength range spanning over 1000 nm is designed and fabricated. It is shown that, when pumped at the telecom C-band, a supercontinuum that spans over 1.5 octaves can be generated from 817 to 2183 nm. The numerical simulations, whose parameters are derived from the measured waveguide dimension and material indices, exhibit good agreement with experimental measurements, where one can observe both a qualitative and quantitative match in the supercontinuum overall spectrum and specific features (e.g., soliton and dispersive wave locations). This study represents an important step forward in the control and manipulation of dispersive and nonlinear dynamics in highly doped silica glass waveguides, paving the way toward advanced on-chip broadband light manipulation. A dispersion engineered highly-doped silica glass (HDSG) waveguide with a low and flat dispersion profile spanning over 1000 nm is fabricated. When pumped at the telecom C-band, it generates a supercontinuum spectrum that spans over 1.5 octaves, from 817 to 2183 nm. This study represents an important step forward in the control and manipulation of dispersive and nonlinear dynamics in HDSG waveguides for advanced on-chip broadband light manipulation. image
Keyword ：
dispersion engineering dispersion engineering highly doped silica glass highly doped silica glass slot waveguides slot waveguides supercontinuum supercontinuum
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| GB/T 7714 | Li, Guangkuo , Li, Yuhua , Ye, Feng et al. Supercontinuum Generation in Dispersion Engineered Highly Doped Silica Glass Waveguides [J]. | LASER & PHOTONICS REVIEWS , 2023 , 17 (11) . |
| MLA | Li, Guangkuo et al. "Supercontinuum Generation in Dispersion Engineered Highly Doped Silica Glass Waveguides" . | LASER & PHOTONICS REVIEWS 17 . 11 (2023) . |
| APA | Li, Guangkuo , Li, Yuhua , Ye, Feng , Li, Qian , Wang, Shao Hao , Wetzel, Benjamin et al. Supercontinuum Generation in Dispersion Engineered Highly Doped Silica Glass Waveguides . | LASER & PHOTONICS REVIEWS , 2023 , 17 (11) . |
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为了准确测量米级长度线型狭缝波导的准横电波(TE)和准横磁波(TM)的色散,设计了一种马赫-曾德尔干涉仪(MZI)的色散测量光路.介绍了相位拟合法和平衡波长法的测量原理,并结合测量光路进行测量.测量结果表明:滤除偏振模式间的串扰噪声,可进一步提高色散测量的准确度;通过调整波导的狭缝尺寸,可对其色散进行有效调控,当狭缝厚度为0.1μm时,波导在1 440～1 640 nm波长范围内具有接近零且平坦的色散.
Keyword ：
色散 色散 集成光波导 集成光波导 马赫-曾德尔干涉仪 马赫-曾德尔干涉仪
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| GB/T 7714 | 林智辉 , 王凌华 , 朱世德 et al. 面向米级狭缝波导的偏振模式色散测量 [J]. | 光通信技术 , 2023 , 47 (6) : 66-71 . |
| MLA | 林智辉 et al. "面向米级狭缝波导的偏振模式色散测量" . | 光通信技术 47 . 6 (2023) : 66-71 . |
| APA | 林智辉 , 王凌华 , 朱世德 , 王少昊 . 面向米级狭缝波导的偏振模式色散测量 . | 光通信技术 , 2023 , 47 (6) , 66-71 . |
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With the evolution of artificial intelligence, the explosive growth of data from sensory terminals gives rise to severe energy-efficiency bottleneck issues due to cumbersome data interactions among sensory, memory, and computing modules. Heterogeneous integration methods such as chiplet technology can significantly reduce unnecessary data movement; however, they fail to address the fundamental issue of the substantial time and energy overheads resulting from the physical separation of computing and sensory components. Brain-inspired in-sensor neuromorphic computing (ISNC) has plenty of room for such data-intensive applications. However, one key obstacle in developing ISNC systems is the lack of compatibility between material systems and manufacturing processes deployed in sensors and computing units. This study successfully addresses this challenge by implementing fully CMOS-compatible TiN/HfO x -based neuristor array. The developed ISNC system demonstrates several advantageous features, including multilevel analogue modulation, minimal dispersion, and no significant degradation in conductance (@125 & DEG;C). These characteristics enable stable and reproducible neuromorphic computing. Additionally, the device exhibits modulatable sensory and multi-store memory processes. Furthermore, the system achieves information recognition with a high accuracy rate of 93%, along with frequency selectivity and notable activity-dependent plasticity. This work provides a promising route to affordable and highly efficient sensory neuromorphic systems.
Keyword ：
analogue modulation analogue modulation fully CMOS-compatible fully CMOS-compatible homogeneousintegration homogeneousintegration in-sensor computing in-sensor computing neuromorphic computing neuromorphic computing
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| GB/T 7714 | Zhang, Haizhong , Qiu, Peng , Lu, Yaoping et al. In-Sensor Computing Realization Using Fully CMOS-Compatible TiN/HfO x -Based Neuristor Array [J]. | ACS SENSORS , 2023 , 8 (10) : 3873-3881 . |
| MLA | Zhang, Haizhong et al. "In-Sensor Computing Realization Using Fully CMOS-Compatible TiN/HfO x -Based Neuristor Array" . | ACS SENSORS 8 . 10 (2023) : 3873-3881 . |
| APA | Zhang, Haizhong , Qiu, Peng , Lu, Yaoping , Ju, Xin , Chi, Dongzhi , Yew, Kwang Sing et al. In-Sensor Computing Realization Using Fully CMOS-Compatible TiN/HfO x -Based Neuristor Array . | ACS SENSORS , 2023 , 8 (10) , 3873-3881 . |
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