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学者姓名：胡海龙
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Abstract ：
Colloidal quantum dot (CQD) near-infrared (NIR) upconversion devices (UCDs) can directly convert low-energy NIR light into higher energy visible light without the need for additional integrated circuits, which is advantageous for NIR sensing and imaging. However, the state-of-the-art CQD NIR upconverters still face challenges, including high turn-on voltage (V on), low photon-to-photon (p-p) upconversion efficiency, and low current on/off ratio, primarily due to inherent limitations in the device structure and operating mechanisms. In this work, we developed a CQD NIR UCD based on a hole-only injection mechanism. Our device effectively suppresses electron injection from the cathode without hindering hole injection from the anode. As a result, the dark current of the device is reduced to a low level, which is favorable for the balance of photogenerated carriers and injected charges. Furthermore, we employed a liquid-phase ligand-exchange process to treat the PbS CQD photosensitive layer (PSL), which enhances the uniformity and charge transport capability of PSL, further optimizing the utilization of photogenerated carriers. We achieved a record high current on/off ratio exceeding 3.5 x 105 for the CQD NIR UCD. Additionally, the device exhibits a high p-p upconversion efficiency of 12.8% and a low V on of 1.8 V.
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| GB/T 7714 | Pan, Youjiang , Wu, Chunyan , Hu, Hailong et al. High-Performance Quantum Dot Near-Infrared Upconversion Devices Based on the Hole-Only Injection Mechanidsm [J]. | JOURNAL OF PHYSICAL CHEMISTRY LETTERS , 2025 , 16 (2) : 618-626 . |
| MLA | Pan, Youjiang et al. "High-Performance Quantum Dot Near-Infrared Upconversion Devices Based on the Hole-Only Injection Mechanidsm" . | JOURNAL OF PHYSICAL CHEMISTRY LETTERS 16 . 2 (2025) : 618-626 . |
| APA | Pan, Youjiang , Wu, Chunyan , Hu, Hailong , Guo, Tailiang , Yang, Guojian , Qian, Lei et al. High-Performance Quantum Dot Near-Infrared Upconversion Devices Based on the Hole-Only Injection Mechanidsm . | JOURNAL OF PHYSICAL CHEMISTRY LETTERS , 2025 , 16 (2) , 618-626 . |
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Electrohydrodynamic (EHD) printing is a promising method for manufacturing high-resolution quantum dot light-emitting diodes (QLEDs). The stability of the EHD printing process and the morphology of final quantum dot (QD) film are highly dependent on the ink formulation. To solve this problem, we selected a ternary solvent (decahydronaphthalene, tetradecane and nonane) ink for cadmium-based QDs (CdSe/ZnS) to achieve excellent QD dispersion while eliminating the "coffee ring" effect, resulting in high quality QD films. We also fabricated a complete QLED device by printing a light-emitting layer formed by linearly aligned strips of QDs, achieving an external quantum efficiency (EQE) of 19.2 %, which is one of the highest levels of printing devices. On this basis, we introduced patterned PMMA structures prepared by nanoimprinting method to achieve ultrahigh resolu-tion devices. The pixel density achieved was 8,758 pixels per inch (PPI), with a maximum EQE of 10.5 %. The luminance is 9530.43 cd/m2 at a voltage of 4 volts. This work shows promising potential in realizing ultra-high resolution and high-performance QLEDs.
Keyword ：
Electrohydrodynamic printing Electrohydrodynamic printing light-emitting diodes light-emitting diodes quantum dot quantum dot ultra-high resolution ultra-high resolution
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| GB/T 7714 | Zeng, Qunying , Fan, Yijie , Zhu, Yangbin et al. Electrohydrodynamic Printing Enables Ultrahigh Resolution Quantum Dot Light-Emitting Diodes [J]. | IEEE ELECTRON DEVICE LETTERS , 2025 , 46 (1) : 64-67 . |
| MLA | Zeng, Qunying et al. "Electrohydrodynamic Printing Enables Ultrahigh Resolution Quantum Dot Light-Emitting Diodes" . | IEEE ELECTRON DEVICE LETTERS 46 . 1 (2025) : 64-67 . |
| APA | Zeng, Qunying , Fan, Yijie , Zhu, Yangbin , Guo, Tailiang , Hu, Hailong , Li, Fushan . Electrohydrodynamic Printing Enables Ultrahigh Resolution Quantum Dot Light-Emitting Diodes . | IEEE ELECTRON DEVICE LETTERS , 2025 , 46 (1) , 64-67 . |
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文本到图像生成是一项极具挑战性的跨模态任务,目标是根据给定文本描述生成对应的图像.尽管现阶段相关研究在视觉呈现方面效果优异,但仍存在细节表达不够精细、语义一致性欠佳等问题.基于此,文章提出了一种基于语义增强的生成对抗模型,将文本进行编码后送入条件增强模块进行处理,丰富文本语义特征.在生成网络中,添加一个自适应块,在仿射变换前将上一层的输出和文本语义信息输入自适应块进行进一步的信息增强.并通过引入对比损失,提高文本与生成图像之间的语义一致性.将这一方法在MSCOCO和CUB birds 200 两个数据集上进行训练测试,实验结果表明,与其他模型相比,性能得到了较高提升.
Keyword ：
对比损失 对比损失 文本生成图像 文本生成图像 生成对抗网络 生成对抗网络 语义增强 语义增强
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| GB/T 7714 | 兰才俊 , 姚剑敏 , 胡海龙 et al. 基于语义增强的单阶段文本生成图像方法 [J]. | 信息技术与信息化 , 2025 , (1) : 5-9 . |
| MLA | 兰才俊 et al. "基于语义增强的单阶段文本生成图像方法" . | 信息技术与信息化 1 (2025) : 5-9 . |
| APA | 兰才俊 , 姚剑敏 , 胡海龙 , 陈恩果 , 严群 . 基于语义增强的单阶段文本生成图像方法 . | 信息技术与信息化 , 2025 , (1) , 5-9 . |
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The rapid development of near-eye display has put forward higher requirements for the resolution and image quality, while the performance of quantum dots (QDs) is virtually unlimited by pixel size, making them an ideal material for the next generation high-resolution display devices. However, there are still significant challenges in depositing multi-color pixels within the micron range and achieving high performance for the full-color quantum dot light emitting diodes (QLEDs). Herein, a combination of directional transfer printing and Langmuir-Blodgett (LB) technique was utilized to precisely transfer multi-color QDs arrays in the predetermined direction, and the full-color QDs arrays demonstrated fantastic morphology and uniform arrangement. As a result, the full-color QLEDs showed excellent performance with a resolution of 6350 pixels per inch (PPI), a luminance up to 62,947 cd/m2 and a peak external quantum efficiency (EQE) of 10.03 %. In addition, pixel spacing layers were introduced to further suppress electrical crosstalk and unwanted light emission, and the redundant part of emissive layers enabled QDs to be embedded into pixel spacing layers readily. The resulting full-color QLEDs with independent pixels exhibited a same high resolution of 6350 PPI, with a luminance of 35,427 cd/m2 and a peak EQE of 8.55 %. Our work represents the best performance of full-color QLEDs with both high efficiency and high resolution, which demonstrates great potential in the application of future near-eye displays.
Keyword ：
Full-color Full-color High-resolution High-resolution Light emitting diodes Light emitting diodes Quantum dots Quantum dots Transfer printing Transfer printing
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| GB/T 7714 | Yang, Kaiyu , Zheng, Hongxi , Zhong, Chao et al. High-resolution and high-performance full-color electroluminescent quantum dot light-emitting diodes [J]. | NANO ENERGY , 2025 , 138 . |
| MLA | Yang, Kaiyu et al. "High-resolution and high-performance full-color electroluminescent quantum dot light-emitting diodes" . | NANO ENERGY 138 (2025) . |
| APA | Yang, Kaiyu , Zheng, Hongxi , Zhong, Chao , Huang, Xingyun , Zhang, Qingkai , Yu, Kuibao et al. High-resolution and high-performance full-color electroluminescent quantum dot light-emitting diodes . | NANO ENERGY , 2025 , 138 . |
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Photosensitive quantum dot light-emitting diodes (PSQLEDs) possess the dual capabilities of generating and detecting light signals, which is of significant importance for the development of miniaturized and integrated optoelectronic devices. However, the state-of-the-art PSQLEDs can only detect light signals within a certain wavelength range, and require switching between the two functions under different bias voltage directions. In this work, The use of a ZnO/quantum dots (QDs)/ZnO multilayer (ZQZ ML) architecture as both the electron transport layer and the photosensitive layer is pioneered. The QDs in this structure are composed of narrow-bandgap lead sulfide QDs and wide-bandgap cadmium selenide QDs, successfully realizing a unique PSQLED device with C photosensitive characteristics. As a result, the as-fabricated device can respond to illumination from 365 to 1300 nm, and the device achieves a photoresponse rate of 20.9 mA W−1 in self-powered mode to UV light. After UV light irradiation, the maximum external quantum efficiency and maximum luminance of device reached 11.8% and 64,549 cd m−2, respectively. The device shows a record-high luminance ON/OFF ratio of 5500%, which is beneficial for high contrast and accurate information display. © 2024 Wiley-VCH GmbH.
Keyword ：
broad-spectrum detection broad-spectrum detection dual-functional dual-functional light-emitting device light-emitting device photosensitive photosensitive quantum dot quantum dot
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| GB/T 7714 | Pan, Y. , Hu, H. , Yang, K. et al. Efficient Dual-Functional Quantum Dot Light-Emitting Diodes with UV-Vis-NIR Broad-Spectrum Photosensitivity [J]. | Advanced Optical Materials , 2024 , 12 (26) . |
| MLA | Pan, Y. et al. "Efficient Dual-Functional Quantum Dot Light-Emitting Diodes with UV-Vis-NIR Broad-Spectrum Photosensitivity" . | Advanced Optical Materials 12 . 26 (2024) . |
| APA | Pan, Y. , Hu, H. , Yang, K. , Chen, W. , Lin, L. , Guo, T. et al. Efficient Dual-Functional Quantum Dot Light-Emitting Diodes with UV-Vis-NIR Broad-Spectrum Photosensitivity . | Advanced Optical Materials , 2024 , 12 (26) . |
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Quantum dot light-emitting diodes (QLEDs) are emerging as promising candidates for next-generation displays, with the current efficiency and stability of both red and green QLEDs meeting display requirements. However, the efficiency and stability of blue QLEDs, particularly pure blue iterations, significantly lag behind those of their red and green counterparts, thus hindering the widespread adoption of full-color QLEDs. Here, we introduce a strategy to improve the efficiency and stability of pure blue zinc selenide (ZnSe) QLEDs by adding a new ionic liquid (IL) salt, 1-butyl-3-methylimidazolium phosphorus hexafluoride (BMIMPF6), into the hole transport layer (HTL). This IL salt acts as an effective p-dopant, enhancing charge mobility while also increasing the surface potentials of the HTL for better alignment of energy bands at the interface. This results in a significant improvement in device performance, with the external quantum efficiency (EQE) increasing from 4.90% to 7.02%, setting a high performance for cadmium-free pure-blue ZnSe QLEDs. Additionally, the device's operational lifetime, measured as the time taken for luminance to drop to 50% (T50) at 100 cd m−2, sees a remarkable six-fold increase, reaching 177 hours. Our work represents a significant advancement in developing cadmium-free pure-blue ZnSe QLEDs and offers valuable insights for designing efficient and stable quantum dot-based displays. © 2024 The Royal Society of Chemistry.
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| GB/T 7714 | Lin, L. , Ye, X. , Luo, Z. et al. Enhancing the efficiency and stability of ZnSe pure blue quantum dot light-emitting diodes via ionic liquid doping [J]. | Journal of Materials Chemistry C , 2024 , 12 (28) : 10408-10416 . |
| MLA | Lin, L. et al. "Enhancing the efficiency and stability of ZnSe pure blue quantum dot light-emitting diodes via ionic liquid doping" . | Journal of Materials Chemistry C 12 . 28 (2024) : 10408-10416 . |
| APA | Lin, L. , Ye, X. , Luo, Z. , Chen, W. , Guo, T. , Hu, H. et al. Enhancing the efficiency and stability of ZnSe pure blue quantum dot light-emitting diodes via ionic liquid doping . | Journal of Materials Chemistry C , 2024 , 12 (28) , 10408-10416 . |
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In the rapidly evolving Metaverse, enhancing user immersion through clear, lifelike, and ergonomic near-eye displays is crucial. However, existing rigid near-eye displays encounter challenges such as insufficient resolution, limited adaptability, and suboptimal visual experiences. To address these issues, a strategic shift is proposed to flexible ultrahigh-resolution (FUR) displays, which combine ultrahigh resolution with the ability to conform to individual eye curvature for a more realistic field of view. FUR quantum dot light-emitting diodes (FUR-QLEDs) featuring 9072 pixels per inch (PPI), a maximum external quantum efficiency (EQE) of 15.7%, and peak brightness of 15 163 cd m−2 are achieved through the integration of nanoimprinting and surface modification technologies. The degradation mechanism of FUR-QLEDs under bending fatigue tests is investigated, identifying the high elastic modulus of the insulating patterned film as the primary cause through theoretical analysis, simulation, and experimental characterizations. Optimizing the elastic modulus of the patterned film enabled to maintain 91% of its initial brightness after 400 bending cycles, demonstrating exceptional bending stability and durability of FUR-QLEDs. © 2024 Wiley-VCH GmbH.
Keyword ：
bending stability bending stability durability durability flexible flexible high performance high performance high-resolution high-resolution QLEDs QLEDs
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| GB/T 7714 | Lin, L. , Dong, Z. , Wang, J. et al. Flexible Ultrahigh-Resolution Quantum-Dot Light-Emitting Diodes [J]. | Advanced Functional Materials , 2024 , 34 (48) . |
| MLA | Lin, L. et al. "Flexible Ultrahigh-Resolution Quantum-Dot Light-Emitting Diodes" . | Advanced Functional Materials 34 . 48 (2024) . |
| APA | Lin, L. , Dong, Z. , Wang, J. , Hu, H. , Chen, W. , Guo, T. et al. Flexible Ultrahigh-Resolution Quantum-Dot Light-Emitting Diodes . | Advanced Functional Materials , 2024 , 34 (48) . |
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Photosensitive quantum dot light-emitting diodes (PSQLEDs) possess the dual capabilities of generating and detecting light signals, which is of significant importance for the development of miniaturized and integrated optoelectronic devices. However, the state-of-the-art PSQLEDs can only detect light signals within a certain wavelength range, and require switching between the two functions under different bias voltage directions. In this work, The use of a ZnO/quantum dots (QDs)/ZnO multilayer (ZQZ ML) architecture as both the electron transport layer and the photosensitive layer is pioneered. The QDs in this structure are composed of narrow-bandgap lead sulfide QDs and wide-bandgap cadmium selenide QDs, successfully realizing a unique PSQLED device with C photosensitive characteristics. As a result, the as-fabricated device can respond to illumination from 365 to 1300 nm, and the device achieves a photoresponse rate of 20.9 mA W-1 in self-powered mode to UV light. After UV light irradiation, the maximum external quantum efficiency and maximum luminance of device reached 11.8% and 64,549 cd m-2, respectively. The device shows a record-high luminance ON/OFF ratio of 5500%, which is beneficial for high contrast and accurate information display. A quantum dot light-emitting diode (QLED) is developed with UV-vis-NIR photosensitive characteristics based on a ZnO/QDs/ZnO multilayer structure. This device can respond to UV to NIR signals in self-powered mode. Additionally, after UV light irradiation, the device achieves a maximum external quantum efficiency of 11.8% and a luminance of 64,549 cd m-2, with a record-high luminance ON/OFF ratio of 5500%. image
Keyword ：
broad-spectrum detection broad-spectrum detection dual-functional dual-functional light-emitting device light-emitting device photosensitive photosensitive quantum dot quantum dot
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| GB/T 7714 | Pan, Youjiang , Hu, Hailong , Yang, Kaiyu et al. Efficient Dual-Functional Quantum Dot Light-Emitting Diodes with UV-Vis-NIR Broad-Spectrum Photosensitivity [J]. | ADVANCED OPTICAL MATERIALS , 2024 , 12 (26) . |
| MLA | Pan, Youjiang et al. "Efficient Dual-Functional Quantum Dot Light-Emitting Diodes with UV-Vis-NIR Broad-Spectrum Photosensitivity" . | ADVANCED OPTICAL MATERIALS 12 . 26 (2024) . |
| APA | Pan, Youjiang , Hu, Hailong , Yang, Kaiyu , Chen, Wei , Lin, Lihua , Guo, Tailiang et al. Efficient Dual-Functional Quantum Dot Light-Emitting Diodes with UV-Vis-NIR Broad-Spectrum Photosensitivity . | ADVANCED OPTICAL MATERIALS , 2024 , 12 (26) . |
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Colloidal quantum dot materials have been widely studied for their excellent narrow emission spectra，tunable emission wavelengths，high luminous efficiencies and excellent stability，and their simultaneous solution-pro-cessability has made quantum dot light-emitting diodes（QLEDs）widely applicable and used. However，the inherent substrate mode within the device leads to a large amount of photons in QLED devices being confined internally and not utilized. In this work，a solvent self-infiltration nanoimprinting process is developed based on the traditional nanoimprinting process while utilizing the surface binding energy of polydimethylsiloxane （PDMS） material itself，which has low pressure dependence and simplifies the traditional process flow，and based on which the micro-nanostructured patterns in three sizes of 1. 3，1，0. 5 μm with high periodicity are produced. Micro-nano-structured patterned layers of three sizes were fabricated based on which the red，green and blue QLED devices were out-coupled to realize light extraction. In this case，the brightness of the 1. 3 μm micro-nanostructured coupled green QLED device reaches 715 069 cd·m-2，and the maximum external quantum efficiency（EQE）and current efficiency are enhanced to 12. 5% and 57. 3 cd·A-1. The individual electrical performances of the 1 μm-size-coupled blue QLED device are nearly 200% improvement. The EQE of the 0. 5 μm size-coupled red QLED device is also improved from 17. 3% to 20. 5%. And through the angular distribution test，it is proved that the micro-nano structure does not affect the luminous intensity of QLED devices，which is still close to the Lambertian emission. The solvent self-infiltration nanoimprinting process and QLED light extraction method proposed in this work provide a simple and effective way to improve the performance of QLEDs. © 2024 Editorial Office of Chinese Optics. All rights reserved.
Keyword ：
Angular distribution Angular distribution Binding energy Binding energy Emission spectroscopy Emission spectroscopy Extraction Extraction Luminance Luminance Nanocrystals Nanocrystals Nanoimprint lithography Nanoimprint lithography Organic light emitting diodes (OLED) Organic light emitting diodes (OLED) Polydimethylsiloxane Polydimethylsiloxane Polystyrenes Polystyrenes Quantum efficiency Quantum efficiency Semiconductor quantum dots Semiconductor quantum dots Silicones Silicones
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| GB/T 7714 | Liang, Long , Zheng, Yueting , Lin, Lihua et al. Improving Performance of Quantum Dot Light-emitting Diode with Self-immersed Nanoimprint-coupling [J]. | Chinese Journal of Luminescence , 2024 , 45 (4) : 613-620 . |
| MLA | Liang, Long et al. "Improving Performance of Quantum Dot Light-emitting Diode with Self-immersed Nanoimprint-coupling" . | Chinese Journal of Luminescence 45 . 4 (2024) : 613-620 . |
| APA | Liang, Long , Zheng, Yueting , Lin, Lihua , Hu, Hailong , Li, Fushan . Improving Performance of Quantum Dot Light-emitting Diode with Self-immersed Nanoimprint-coupling . | Chinese Journal of Luminescence , 2024 , 45 (4) , 613-620 . |
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Quantum dot light-emitting diodes (QLEDs) have attracted increasing attention due to their excellent electroluminescent properties and compatibility with inkjet printing processes, which show great potential in applications of pixelated displays. However, the relatively low resolution of the inkjet printing technology limits its further development. In this paper, high-resolution QLEDs were successfully fabricated by electrohydrodynamic (EHD) printing. A pixelated quantum dot (QD) emission layer was formed by printing an insulating Teflon mesh on a spin-coated QD layer. The patterned QLEDs show a high resolution of 2540 pixels per inch (PPI), with a maximum external quantum efficiency (EQE) of 20.29% and brightness of 35816 cd/m(2). To further demonstrate its potential in full-color display, the fabrication process for the QD layer was changed from spin-coating to EHD printing. The as-printed Teflon effectively blocked direct contact between the hole transport layer and the electron transport layer, thus preventing leakage currents. As a result, the device showed a resolution of 1692 PPI with a maximum EQE of 15.40%. To the best of our knowledge, these results represent the highest resolution and efficiency of pixelated QLEDs using inkjet printing or EHD printing, which demonstrates its huge potential in the application of high-resolution full-color displays.
Keyword ：
electrohydrodynamic printing electrohydrodynamic printing high performance high performance high resolution high resolution light-emitting diode light-emitting diode quantum dots quantum dots teflon teflon
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| GB/T 7714 | Yang, Kaiyu , Weng, Xukeng , Feng, Jiahuan et al. High-Resolution Quantum Dot Light-Emitting Diodes by Electrohydrodynamic Printing [J]. | ACS APPLIED MATERIALS & INTERFACES , 2024 , 16 (7) : 9544-9550 . |
| MLA | Yang, Kaiyu et al. "High-Resolution Quantum Dot Light-Emitting Diodes by Electrohydrodynamic Printing" . | ACS APPLIED MATERIALS & INTERFACES 16 . 7 (2024) : 9544-9550 . |
| APA | Yang, Kaiyu , Weng, Xukeng , Feng, Jiahuan , Yu, Yongshen , Xu, Baolin , Lin, Qiuxiang et al. High-Resolution Quantum Dot Light-Emitting Diodes by Electrohydrodynamic Printing . | ACS APPLIED MATERIALS & INTERFACES , 2024 , 16 (7) , 9544-9550 . |
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