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学者姓名：胡海龙
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由于量子点优异的材料特性，包括可调的能带间隙、高量子产率、高稳定性和可低成本地溶液加工等，其在显示领域引发了浓厚的兴趣和研究热潮。近年来，随着全世界对高质量显示的需求日益增长，特别是随着虚拟/增强现实（VR/AR）等近眼显示技术的兴起，对高亮度、高分辨率、高效率以及低功耗的显示技术提出了更高的要求。本文全面探讨了高分辨率量子点图案化技术，深入解析它们的工艺流程，并详细阐述它们在量子点显示器件中的各种应用。此外，还概述了高分辨率量子点图案化技术在实际应用中所面临的主要挑战。我们认为，要将高分辨率量子点图案化技术真正地应用到实际设备中，必须全面考虑各种因素，不仅包括从图案化技术出发，同时还涉及到从材料选择和器件结构设计等多个角度的深入思考和策划。本综述可为高分辨率量子点图案化技术行业的发展和研究提供有价值的参考。
Keyword ：
图案化技术 图案化技术 显示技术 显示技术 量子点 量子点 高分辨率 高分辨率
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| GB/T 7714 | 潘友江 , 林立华 , 杨开宇 et al. 高分辨率量子点图案化技术 [J]. | 光学学报 , 2024 , 44 (02) : 44-59 . |
| MLA | 潘友江 et al. "高分辨率量子点图案化技术" . | 光学学报 44 . 02 (2024) : 44-59 . |
| APA | 潘友江 , 林立华 , 杨开宇 , 陈伟 , 胡海龙 , 郭太良 et al. 高分辨率量子点图案化技术 . | 光学学报 , 2024 , 44 (02) , 44-59 . |
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在恶劣天气中拍摄的图片，由于雨雪霾等恶劣天气的影响会对视线有一定的阻挡，导致可见度下降严重，图片的背景失真严重，从而对图片识别、语义分割或者目标监测产生很大的误差。此前，大多数的天气退化图像的修复都是基于深度学习算法或是生成对抗网络为基本架构的，由于去噪扩散模型（DDPM）在计算机视觉上的优势比较大，所以采用以扩散模型为基本架构来进行雨类的天气退化图像的反向采样，经典扩散模型的噪声估计网络是基于U-Net的结构，现提出了一种改进的U-Net噪声估计网络结构，将通道自适应注意力机制与U-Net结合，在图像去雨方面有着较好的恢复表现。
Keyword ：
图像修复 图像修复 图像去雨 图像去雨 天气退化 天气退化 扩散模型 扩散模型 通道适应注意力机制 通道适应注意力机制
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| GB/T 7714 | 刘德崇 , 姚剑敏 , 胡海龙 et al. 基于扩散模型的天气退化图像修复技术 [J]. | 信息技术与信息化 , 2024 , 4 (03) : 208-211 . |
| MLA | 刘德崇 et al. "基于扩散模型的天气退化图像修复技术" . | 信息技术与信息化 4 . 03 (2024) : 208-211 . |
| APA | 刘德崇 , 姚剑敏 , 胡海龙 , 陈恩果 , 严群 , 程慧敏 et al. 基于扩散模型的天气退化图像修复技术 . | 信息技术与信息化 , 2024 , 4 (03) , 208-211 . |
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胶体量子点材料因其优良的窄发射光谱、可调发射波长、高发光效率和优异的稳定性而被广泛研究，且同时具有溶液可加工性使得量子点发光二极管（Quantum dot light-emitting diode, QLED）具有广泛的适用性和应用。然而，器件自身存在的基底模式导致QLED器件大量光子被限制在内部无法利用。本文基于纳米压印工艺同时利用聚二甲基硅氧烷（Polydimethylsiloxane,PDMS）材料本身的表面结合能开发出溶剂自浸润式纳米压印工艺，对压力依赖度低的同时简化了工艺流程，制备出高质量周期性的1.3,1,0.5μm三种尺寸的微纳结构图案层，对红、绿、蓝三色QLED器件进行耦合实现光提取。在这种情况下，1.3μm微纳结构耦合绿光QLED器件亮度达到715 069 cd·m~(-2)，最大外量子效率（External quantum efficiency,EQE）和电流效率分别提升至12.5%和57.3 cd·A~(-1);1μm尺寸耦合的蓝光QLED器件各电学性能提升接近200%;0.5μm尺寸耦合红光QLED器件EQE也从17.3%提升至20.5%。并通过角分布测试，证明微纳结构不会对QLED器件发光强度造成影响，仍然接近朗伯体发射。本工作提出的溶剂自浸润式纳米压印工艺及QLED光提取方法，为QLED的性能提升提供了一条简单有效的途径。
Keyword ：
光学仿真 光学仿真 纳米压印 纳米压印 耦合光学性能 耦合光学性能 量子点发光二极管 量子点发光二极管
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| GB/T 7714 | 梁龙 , 郑悦婷 , 林立华 et al. 自浸润式纳米压印耦合实现量子点发光二极管性能提升 [J]. | 发光学报 , 2024 , 45 (04) : 613-620 . |
| MLA | 梁龙 et al. "自浸润式纳米压印耦合实现量子点发光二极管性能提升" . | 发光学报 45 . 04 (2024) : 613-620 . |
| APA | 梁龙 , 郑悦婷 , 林立华 , 胡海龙 , 李福山 . 自浸润式纳米压印耦合实现量子点发光二极管性能提升 . | 发光学报 , 2024 , 45 (04) , 613-620 . |
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Quantum dot light-emitting diodes (QLEDs), as an emerging display technology, have garnered widespread attention due to their excellent color rendering, high efficiency, and long lifespan. However, the inherent differences in the properties of charge transport layer materials inevitably lead to charge injection imbalances and low device performance. Herein, we developed a simple technique by using femtosecond laser scanning over the QLED devices. The results indicate that scanning with a femtosecond laser improves the conductivity of the hole transport layer and increases the external quantum efficiency of the QLED devices. Our work provides an effective route for realizing high performance QLED devices with efficient post-treatment. (c) 2024 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
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| GB/T 7714 | Wang, Dingke , Zhuang, Jiaqing , Hou, Wenjun et al. High efficiency quantum dot light-emitting diodes with femtosecond laser post-treatment [J]. | AIP ADVANCES , 2024 , 14 (4) . |
| MLA | Wang, Dingke et al. "High efficiency quantum dot light-emitting diodes with femtosecond laser post-treatment" . | AIP ADVANCES 14 . 4 (2024) . |
| APA | Wang, Dingke , Zhuang, Jiaqing , Hou, Wenjun , Yan, Xiaolin , Hu, Hailong , Guo, Tailiang et al. High efficiency quantum dot light-emitting diodes with femtosecond laser post-treatment . | AIP ADVANCES , 2024 , 14 (4) . |
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Perovskite light-emitting diodes (PeLEDs) have emerged as a prominent area of research in recent years, owing to their promising prospects for application in solid-state lighting and high-resolution displays. High performance has been achieved in the green and red emissions. However, blue PeLEDs, which are critical for display applications, are less efficient. The interfacial problem between the perovskite emission layer and the charge injection layer significantly hinders the device performance. Here, we introduced l-aspartic acid potassium (PLAK) into the hole injection layer, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS). The amino and carboxyl groups as well as potassium ions in the additive not only improved the wettability of PEDOT:PSS but also increased the nucleation sites at the interface, which simultaneously improved the film morphology and crystallinity, and fully passivated the bottom interface of the perovskite. In addition, the introduction of PLAK reduced the release of indium from ITO induced by acid PEDOT:PSS, thereby further inhibiting exciton quenching in the perovskite layer. Moreover, it achieved a better band alignment and successfully reduced the turn-on voltage of PeLEDs from 3.2 V to 2.9 V. Finally, the prepared blue PeLEDs emitted at 484 nm with the external quantum efficiency doubled from 3.23% to 6.98%. Our approach provides an effective strategy of buried interface engineering for improving the performance of blue PeLEDs. The synergistic effect of the doping strategy of basic amino acid salts at the interface enables the simultaneous modification of PEDOT:PSS and the bottom interface of the perovskite film to achieve efficient sky-blue PeLEDs.
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| GB/T 7714 | Yang, Kaiyu , Lin, Qiuxiang , Xu, Baolin et al. Synergistic interaction of multi-functional additives at the buried interface for efficient blue perovskite light-emitting diodes [J]. | JOURNAL OF MATERIALS CHEMISTRY C , 2024 , 12 (11) : 4123-4129 . |
| MLA | Yang, Kaiyu et al. "Synergistic interaction of multi-functional additives at the buried interface for efficient blue perovskite light-emitting diodes" . | JOURNAL OF MATERIALS CHEMISTRY C 12 . 11 (2024) : 4123-4129 . |
| APA | Yang, Kaiyu , Lin, Qiuxiang , Xu, Baolin , Yu, Yongshen , Hu, Hailong , Li, Fushan . Synergistic interaction of multi-functional additives at the buried interface for efficient blue perovskite light-emitting diodes . | JOURNAL OF MATERIALS CHEMISTRY C , 2024 , 12 (11) , 4123-4129 . |
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Perovskite light-emitting diodes (PeLEDs) have attracted wide attention due to their excellent photoelectric properties. A variety of additives have been studied for perovskite emission layers to enhance the performance of PeLEDs. However, the buried interface, which also has significant influence on the crystallization kinetics and exciton recombination dynamics of the perovskite emission layer, remains to be explored. In this work, we introduced a new ionic liquid 1-Ethyl-3-methylimidazolium dicyanamide (EMIM DCA) with the characteristics of low viscosity and high conductivity into the interfacial layer between the hole transport layer (HTL) and the perovskite film. Due to the strong interaction between the EMIM DCA and perovskite, the crystallization of the perovskite film is obviously improved and the defects at the interface are well passivated. As a result, the nonradiative recombination in the interlayer is significantly reduced. In addition, the introduction of EMIM DCA promoted the injection of charge carriers, thus achieving a high luminance of 32310 cd m(-2) and enabling the maximum external quantum efficiency (EQE) of the PeLEDs increased from 10.2 % to 18.7 %.
Keyword ：
Buried interface Buried interface Ionic liquids Ionic liquids Light-emitting diodes Light-emitting diodes Perovskite Perovskite Q-2D Q-2D
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| GB/T 7714 | Yang, Kaiyu , Xu, Baolin , Lin, Qiuxiang et al. Interface engineering with ionic liquid for achieving efficient Quasi-2D perovskite light-emitting diodes [J]. | CHEMICAL ENGINEERING JOURNAL , 2024 , 483 . |
| MLA | Yang, Kaiyu et al. "Interface engineering with ionic liquid for achieving efficient Quasi-2D perovskite light-emitting diodes" . | CHEMICAL ENGINEERING JOURNAL 483 (2024) . |
| APA | Yang, Kaiyu , Xu, Baolin , Lin, Qiuxiang , Yu, Yongshen , Hu, Hailong , Li, Fushan . Interface engineering with ionic liquid for achieving efficient Quasi-2D perovskite light-emitting diodes . | CHEMICAL ENGINEERING JOURNAL , 2024 , 483 . |
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The photolithographic patterning of fine quantum dot (QD) films is of great significance for the construction of QD optoelectronic device arrays. However, the photolithography methods reported so far either introduce insulating photoresist or manipulate the surface ligands of QDs, each of which has negative effects on device performance. Here, we report a direct photolithography strategy without photoresist and without engineering the QD surface ligands. Through cross-linking of the surrounding semiconductor polymer, QDs are spatially confined to the network frame of the polymer to form high-quality patterns. More importantly, the wrapped polymer incidentally regulates the energy levels of the emitting layer, which is conducive to improving the hole injection capacity while weakening the electron injection level, to achieve balanced injection of carriers. The patterned QD light-emitting diodes (with a pixel size of 1.5 mu m) achieve a high external quantum efficiency of 16.25% and a brightness of >1.4 x 10(5) cd/m(2). This work paves the way for efficient high-resolution QD light-emitting devices.
Keyword ：
cross-linking cross-linking direct photolithography direct photolithography high resolution high resolution light-emitting diode light-emitting diode quantum dot quantum dot
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| GB/T 7714 | Qie, Yuan , Hu, Hailong , Yu, Kuibao et al. Ligand-Nondestructive Direct Photolithography Assisted by Semiconductor Polymer Cross-Linking for High-Resolution Quantum Dot Light-Emitting Diodes [J]. | NANO LETTERS , 2024 , 24 (4) : 1254-1260 . |
| MLA | Qie, Yuan et al. "Ligand-Nondestructive Direct Photolithography Assisted by Semiconductor Polymer Cross-Linking for High-Resolution Quantum Dot Light-Emitting Diodes" . | NANO LETTERS 24 . 4 (2024) : 1254-1260 . |
| APA | Qie, Yuan , Hu, Hailong , Yu, Kuibao , Zhong, Chao , Ju, Songman , Liu, Yanbing et al. Ligand-Nondestructive Direct Photolithography Assisted by Semiconductor Polymer Cross-Linking for High-Resolution Quantum Dot Light-Emitting Diodes . | NANO LETTERS , 2024 , 24 (4) , 1254-1260 . |
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High-resolution (HR) displays are in much demand as metaverse makes near-eye displays the most important equipment in recent years. Based on wave optics, a microscale optical crosstalk model for HR display devices is proposed. It is indicated that the pixel pattern will be distorted over long-distance transmission in light-emitting devices with inner periodic microstructure, and the optical distortion is related to the size of pixels and the distance from the emitting layer to the outlet. A bottom emissive HR red quantum dot light-emitting diode (QLED) array is introduced to confirm the model and a top emission scheme is provided to effectively reduce the transmission distance and suppress the pixel distortion. Optical-crosstalk-free pixels are finally achieved by adopting the optimized top-emission cathode thickness of 30 nm. This study provides a direction for realizing high-quality and high-resolution micro-displays. The optical distortion is related to the size of pixels and the distance from the emitting layer to the outlet. A top emission scheme is provided to effectively reduce the transmission distance and suppress the pixel distortion. Optical-crosstalk-free pixels are achieved by adopting the optimized top emission cathode thickness of 30 nm. image
Keyword ：
display distortion display distortion high-resolution high-resolution optical crosstalk optical crosstalk QLED QLED
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| GB/T 7714 | Zheng, Yueting , Lin, Lihua , Hu, Hailong et al. Optical Crosstalk Suppression in High-Resolution Quantum Dot Light-Emitting Devices [J]. | ADVANCED OPTICAL MATERIALS , 2024 . |
| MLA | Zheng, Yueting et al. "Optical Crosstalk Suppression in High-Resolution Quantum Dot Light-Emitting Devices" . | ADVANCED OPTICAL MATERIALS (2024) . |
| APA | Zheng, Yueting , Lin, Lihua , Hu, Hailong , Guo, Tailiang , Li, Fushan . Optical Crosstalk Suppression in High-Resolution Quantum Dot Light-Emitting Devices . | ADVANCED OPTICAL MATERIALS , 2024 . |
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Significance The evolution of display technology is a cornerstone of modern technological advancement, fundamentally transforming how humans interact with machines. This transformation is vividly apparent in human-computer interactions, where the integration of sophisticated display technologies has led to more intuitive and immersive experiences. The global living standard improvement has further fueled expectations for advanced display devices, with consumers seeking higher quality, efficiency, and functionality. The advent of near-eye display technologies such as augmented reality (AR), mixed reality (MR), and virtual reality (VR) has only heightened the demands for high-resolution microdisplays. These emerging technologies require displays that provide not only high resolution but also compactness, energy efficiency, and the ability to reproduce colors accurately and vividly. The current market is dominated by micro-LED technology and recognized for its superior brightness and energy efficiency. However, the production of full-color micro-LEDs poses significant challenges, chiefly in the massive transfer of differently colored LED chips onto a single wafer. This process demands an exceptionally high yield rate, making it both technologically challenging and costly. As a new type of semiconductor nanocrystal materials with quantum confinement effects, quantum dots (QDs) have sparked great interest in the display field due to their unique properties such as tunable bandgaps, high quantum yields, high stability, and potential for cost-effective solution processing. QDs typically adopt a core- shell structure [Fig. 1(a)] and by adjusting the energy levels of the core-shell structure, excitons within the QDs can be confined. Organic ligands on the surface of QD shells provide steric hindrance among the dots, thus preventing aggregation and fluorescence quenching. The physicochemical properties of QDs can be adjusted by changing their organic ligands. Since Alivisatos's research team first reported LEDs with QDs as the electroluminescent layer in 1994, QD display devices have undergone 30 years of research. Additionally, high-resolution display devices using QDs have been realized via various patterning technologies to exhibit excellent device performance and fine pixel patterns. Although high-resolution patterning technology based on QDs has been extensively studied, there is still a lack of comprehensive reviews and summaries of recent work. Therefore, it is significant to summarize existing research and explore future development trends. Progress The current leading high-resolution QD patterning technologies encompass inkjet printing, photolithography, photo-crosslinking, region-selective deposition, transfer printing, and in-situ fabrication. These technologies are thoroughly compared and summarized in their process flows, strengths, and weaknesses, as depicted in Figs. 2, 6, and 8-12. In 2023, the team led by researcher Chen Zhuo from BOE Technology Group Co., Ltd. utilized electrospray inkjet printing for fabricating both bottom-emitting and top-emitting electroluminescent QD devices, achieving a resolution of 500 ppi. In 2020, the team of Xu Xiaoguang at BOE successfully created a 500 ppi full-color passive matrix QD light-emitting device by a sacrificial layer-assisted photolithography method. That same year, Moon Sung Kang and the team at Sogang University in the republic of Korea developed a method for patterning QDs with a photo-driven ligand crosslinking agent, successfully producing full- color QD patterns with a resolution of 1400 ppi. In 2021, Sun Xiaowei and the team at Southern University of Science and Technology achieved a large-area full-color QD thin film with 1000 ppi resolution via selective electrophoretic deposition. In 2019, Hu Binbin at Henan University reported on assembling QD nanoparticles into microstructures via wetting-induced deposition. In 2021, the team led by Chen Shuming at Southern University of Science and Technology built a resonant cavity in white light QD light-emitting devices to achieve full-color patterned QD devices and a QD film patterning resolution of 8465 ppi. In 2015, Taeghwan Hyeon and the team at the Institute for Basic Science in the republic of Korea realized QD light-emitting devices with a resolution of 2460 ppi using gravure transfer printing technology. In 2022, our team collaborated with the team of Qian Lei at the Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, integrated transfer printing with Langmuir-Blodgett film technology to create ultra-high pixel density QD light-emitting devices at 25400 ppi. In 2021, Zhong Haizheng and the team at the Beijing Institute of Technology prepared patterned CsPbI3 QD patterns on substrates via laser direct writing in situ. Conclusions and Prospects As carriers of visual information, display devices play an indispensable role in our daily lives. Emerging as revolutionary materials, QDs have become the ideal choice for next-generation display technologies with their unique properties such as tunable bandgaps, high quantum yields, and stability. Consequently, mastering high-resolution QD patterning is a crucial challenge that should be addressed for QD display devices to make significant strides in the market. In summary, various high-resolution QD patterning technologies require further detailed exploration to advance the applications and development of QD light-emitting devices in high-quality displays.
Keyword ：
display technology display technology high resolution high resolution patterning technology patterning technology quantum dot quantum dot
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| GB/T 7714 | Pan Youjiang , Lin Lihua , Yang Kaiyu et al. Patterning Technology of High-Resolution Quantum Dots [J]. | ACTA OPTICA SINICA , 2024 , 44 (2) . |
| MLA | Pan Youjiang et al. "Patterning Technology of High-Resolution Quantum Dots" . | ACTA OPTICA SINICA 44 . 2 (2024) . |
| APA | Pan Youjiang , Lin Lihua , Yang Kaiyu , Chen Wei , Hu Hailong , Guo Tailiang et al. Patterning Technology of High-Resolution Quantum Dots . | ACTA OPTICA SINICA , 2024 , 44 (2) . |
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With pixel miniaturization, the performance of high-resolution quantum dot light-emitting diodes (QLEDs) usually degrades. Considering the dimension of ultrasmall pixels, herein, a barrier architecture based on localized surface plasmon resonance (LSPR) that promotes the radiative recombination of neighboring quantum dots is rationally designed to improve the device performance. Au nanoparticles (NPs) are embedded in an insulating polymer to form a honeycomb-patterned barrier layer via the nanoimprint process. Each pixel fabricated in the void area (average diameter of 1.5 mu m) of the barrier layer is surrounded by a number of LSPR-NPs to enhance the luminescence. The resultant green QLEDs with a resolution of 9027 pixels per inch show a maximum external quantum efficiency of 11.1%, a 42.8% enhancement compared to the control device. Additionally, the lifetime of high-resolution QLEDs is obviously improved by the LSPR effect.
Keyword ：
Au nanoparticles Au nanoparticles high-resolution high-resolution light-emitting diodes light-emitting diodes localized surfaceplasmon resonance localized surfaceplasmon resonance quantum dot quantum dot
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| GB/T 7714 | Zhang, Xu , Hu, Hailong , Qie, Yuan et al. Boosting the Efficiency of High-Resolution Quantum Dot Light-Emitting Devices Based on Localized Surface Plasmon Resonance [J]. | ACS APPLIED MATERIALS & INTERFACES , 2024 , 16 (10) : 13219-13224 . |
| MLA | Zhang, Xu et al. "Boosting the Efficiency of High-Resolution Quantum Dot Light-Emitting Devices Based on Localized Surface Plasmon Resonance" . | ACS APPLIED MATERIALS & INTERFACES 16 . 10 (2024) : 13219-13224 . |
| APA | Zhang, Xu , Hu, Hailong , Qie, Yuan , Lin, Lihua , Guo, Tailiang , Li, Fushan . Boosting the Efficiency of High-Resolution Quantum Dot Light-Emitting Devices Based on Localized Surface Plasmon Resonance . | ACS APPLIED MATERIALS & INTERFACES , 2024 , 16 (10) , 13219-13224 . |
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