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学者姓名：陈之荣
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Abstract ：
The study about the supramolecular interactions in the organic-inorganic hybrids will be significant for the design of new photo/electrical functional materials. In this work, 1,omega-bis(isoquinoline)alkane cations with different spacer lengths (n = 3, 5, 6) have been incorporated with iodobismuthates to construct three new hybrids, which have been formula as [BIQPP]2[Bi4I16] (1), [BIQPT]2[Bi4I16] (2) and [BIQHX]2[Bi4I16] (3) through X-ray single crystal diffraction method (BIQPP2+ = 1,3-bis(isoquinoline)propane, BIQPT2+ = 1,5-bis(isoquinoline) pentane, BIQHX2+ = 1,6-bis(isoquinoline)hexane). The centrosymmetric [Bi4I16]4- anions are constructed from four edge-sharing BiI6 octahedra. Interestingly, with the elongation of spacer length on isoquinoline from 3, 5 to 6, the iodobismuthate anions exhibit 0-D [Bi4I16]4- tetramers (n = 3, 6 for 1 and 3) and pseudo 3-D [Bi4I16]n4n- network (n = 5, for 2) based on II interactions. Supramolecular interactions including pi-pi stacking interactions and C-HI hydrogen bonds contribute to their structural extensions. Consequently, the enhanced red emission intensity and the lower thermochromic temperature can be observed in 2. The clarification on the spacer effect on the supramolecular interactions and functional properties of this work will be beneficial for the design of new functional materials.Graphical Abstract Different iodobismuthate anions and photo-physical properties including red emission intensity and thermochromism can be achieved by elongating the spacer lengths in 1,omega-Bis(isoquinoline)alkane cations
Keyword ：
Bis(isoquinoline)alkane Bis(isoquinoline)alkane Iodobismuthates Iodobismuthates Organic-inorganic hybrid Organic-inorganic hybrid Photo-physical properties Photo-physical properties Supra-molecular structure Supra-molecular structure
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| GB/T 7714 | Wang, Peng , Sheng, Wen-Wen , Xu, Ying-Sheng et al. The Supramolecular Structures and Photo-Physical Properties Modulated by Spacer Lengths in 1,ω-Bis(isoquinoline)Alkane/(Bi4I16)4- Hybrids [J]. | JOURNAL OF CHEMICAL CRYSTALLOGRAPHY , 2024 , 55 (1) : 47-55 . |
| MLA | Wang, Peng et al. "The Supramolecular Structures and Photo-Physical Properties Modulated by Spacer Lengths in 1,ω-Bis(isoquinoline)Alkane/(Bi4I16)4- Hybrids" . | JOURNAL OF CHEMICAL CRYSTALLOGRAPHY 55 . 1 (2024) : 47-55 . |
| APA | Wang, Peng , Sheng, Wen-Wen , Xu, Ying-Sheng , Chen, Zhi-Rong . The Supramolecular Structures and Photo-Physical Properties Modulated by Spacer Lengths in 1,ω-Bis(isoquinoline)Alkane/(Bi4I16)4- Hybrids . | JOURNAL OF CHEMICAL CRYSTALLOGRAPHY , 2024 , 55 (1) , 47-55 . |
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The exploration of novel photo/thermal-responsive nonvolatile memorizers will be beneficial for energysaving memories. Herein, new < 110 > -oriented perovskites using single template melamine, i.e. , [(MLAIH 2 )(Pb X 4 )] n ( X = Br ( alpha- 1 ), Cl ( alpha- 2 ), MLAI = melamine) have been prepared and their structures upon irradiation of visible light have been investigated. They have been fabricated as nonvolatile memory devices with structures of ITO/[(MLAI-H 2 )(Pb X 4 )] n /PMMA/Ag (device- 1 : X = Br, device- 2 : X = Cl), which can exhibit unique visible light-triggered binary nonvolatile memory performances. Interestingly, the silent or working status can be monitored by visible chromisms. Furthermore, the light-triggered binary resistive switching mechanisms of these ITO/[(MLAI-H 2 )(Pb X 4 )] n /PMMA/Ag memory devices have been clarified in terms of EPR, fluorescence, and single-crystal structural analysis. The presence of light-activated traps in < 110 > -oriented [(MLAI-H 2 )(Pb X 4 )] n perovskites are dominated in the appearance of light-triggered resistive switching behaviors, based on which the inverted internal electrical fields can be established. According to the structural analysis, the more distorted Pb X 6 octahedra, higher corrugated < 110 > -oriented perovskite sheets, and more condensed organic-inorganic packing in Br-containing perovskite are beneficial for the stabilization of light-activated traps, which lead to the better resistive switching behavior of device- 1 . This work can pave a new avenue for the establishment of novel energy-saving nonvolatile memorizers used in aerospace or military industries.(c) 2023 Published by Elsevier B.V. on behalf of Chinese Chemical Society and Institute of Materia Medica, Chinese Academy of Medical Sciences.
Keyword ：
110-Oriented lead halide perovskite 110-Oriented lead halide perovskite Light-triggered memory Light-triggered memory Nonvolatile memorizer Nonvolatile memorizer Photochromisms Photochromisms Photo-responsive structural evolution Photo-responsive structural evolution
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| GB/T 7714 | Song, Kaiyue , Zhou, Panke , Zong, Lulu et al. The visible light-triggered nonvolatile memory performances in melamine-decorated 110-oriented lead halide perovskites: A photo-responsive structural evolution insight [J]. | CHINESE CHEMICAL LETTERS , 2023 , 34 (3) . |
| MLA | Song, Kaiyue et al. "The visible light-triggered nonvolatile memory performances in melamine-decorated 110-oriented lead halide perovskites: A photo-responsive structural evolution insight" . | CHINESE CHEMICAL LETTERS 34 . 3 (2023) . |
| APA | Song, Kaiyue , Zhou, Panke , Zong, Lulu , Yang, Zhencong , Li, Haohong , Chen, Zhirong . The visible light-triggered nonvolatile memory performances in melamine-decorated 110-oriented lead halide perovskites: A photo-responsive structural evolution insight . | CHINESE CHEMICAL LETTERS , 2023 , 34 (3) . |
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The low ternary yield and expensive organic active materials hinder the potential industrialization of organic multi-level resistive memories. Here, facile melamine (M)-cyanuric acid (C) hydrogen-bonded organic frame-work (M -C HOF) was firstly fabricated as a new type of ternary memorizer. In the M -C HOF, the robust graphite-like planar 2D sheet along ab-plane containing a rosette motif is constructed from nine hydrogen bonds among M and C, and the 2D sheets are stacked into a 3D network through strong pi-pi stacking interactions. The FTO/M-C/Ag device exhibits a typical ternary memory performance with considerable OFF/ON1/ON2 current ratio of 1:103.1:104.6, relatively low set voltages (1.14 and 1.70 V), good reliability, and high ternary device yield of 74 %. The ternary resistive switching behavior could be ascribed to the filled traps in 2D layer (for ON1 state) and the carriers flowing in 3D network (for ON2 state), which have been verified by quenched fluorescence of isolated M and C, increased (201) lattice plane distance upon external voltages. Besides, this ternary memorizer has superior thermal stability (300 degrees C) and irradiative tolerance. This attempt of HOF-based ternary memorizer presents a new choice for efficient and facial multi-level resistive material.
Keyword ：
Hydrogen-bonded organic framework Hydrogen-bonded organic framework Memorizers in harsh environment Memorizers in harsh environment Ternary resistive memorizer Ternary resistive memorizer Ternary resistive switching mechanism Ternary resistive switching mechanism
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| GB/T 7714 | Song, Kaiyue , Yang, Hailong , Chen, Binjun et al. The facile implementing ternary resistive memory in graphite-like melamine-cyanuric acid hydrogen-bonded organic framework with high ternary yield and environmental tolerance [J]. | APPLIED SURFACE SCIENCE , 2023 , 608 . |
| MLA | Song, Kaiyue et al. "The facile implementing ternary resistive memory in graphite-like melamine-cyanuric acid hydrogen-bonded organic framework with high ternary yield and environmental tolerance" . | APPLIED SURFACE SCIENCE 608 (2023) . |
| APA | Song, Kaiyue , Yang, Hailong , Chen, Binjun , Lin, Xiaoli , Liu, Yue , Liu, Yuanzheng et al. The facile implementing ternary resistive memory in graphite-like melamine-cyanuric acid hydrogen-bonded organic framework with high ternary yield and environmental tolerance . | APPLIED SURFACE SCIENCE , 2023 , 608 . |
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The coming big-data era has created a huge demand for next-generation memory technologies with characters of higher data-storage densities, faster access speeds, lower power consumption and better environmental compatibility. In this field, the design of resistive switching active materials is pivotal but challengeable. Polyoxometalates (POMs) are promising candidates for next-generation molecular memristors due to their versatile redox characters, excellent electron reservoirs and good compatibility/convenience in microelectronics processing. In this review, five kinds of POM-based active materials in nonvolatile memories (inorganic POMs, crystalline organic-inorganic hybrid POMOFs, polymer modified POMs, POM/transition metal oxides composites and the deposition of POM on metal surfaces) were described. The components of POMs active materials, device fabrications, device parameters, and resistive switching mechanisms relative to their structures were summarized. Finally, challenges and future perspectives of POMs-based memristors were also presented.
Keyword ：
memristors memristors polyoxometalate polyoxometalate polyoxometalate-based composite polyoxometalate-based composite resistive random access memory resistive random access memory resistive switching mechanism resistive switching mechanism
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| GB/T 7714 | Yang, Hailong , Yue, Guoli , Li, Tao et al. The Old Polyoxometalates in New Application as Molecular Resistive Switching Memristors [J]. | EUROPEAN JOURNAL OF INORGANIC CHEMISTRY , 2023 , 26 (32) . |
| MLA | Yang, Hailong et al. "The Old Polyoxometalates in New Application as Molecular Resistive Switching Memristors" . | EUROPEAN JOURNAL OF INORGANIC CHEMISTRY 26 . 32 (2023) . |
| APA | Yang, Hailong , Yue, Guoli , Li, Tao , Du, Lingling , Li, Haohong , Chen, Zhirong et al. The Old Polyoxometalates in New Application as Molecular Resistive Switching Memristors . | EUROPEAN JOURNAL OF INORGANIC CHEMISTRY , 2023 , 26 (32) . |
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The study about simultaneously enhancing the resistive switching level and ambient-air-stability of perovskite-based memorizers will promote its commercialization. Here, a new 3D perovskite (TAZ-H) PbBr3 (TAZ-H+ = protonated thiazole) has been fabricated as FTO/(TAZ-H)PbBr3/Ag device, which only exhibits binary memory performance with the high tolerant temperature of 170 degrees C. After encapsulating by polyvinylpyrrolidone (PVP), the (TAZ-H)PbBr3@PVP composite-based device can demonstrate ternary resistive switching behavior with considerable ON2/ON1/OFF ratio (105.9: 103.9:1) and high ternary yield (68 %). Specially, this device presents good ambient-air stability at RH 80 % and thermal tolerance of 100 degrees C. The binary resistive switching mechanism can be ascribed to the halogen ion migration induced by bromine defects in the (PbBr3)nn- framework. But the ternary resistive switching phenomenon in the (TAZ-H)PbBr3@PVP-based device could be depicted as the carrier transport from filled traps of PVP to (PbBr3)nn- framework (ON1 state) and then carriers flowing in the re-arranged (TAZ-H)nn+ chain in 3D chan-nels (ON2 state). The PVP treatment can not only modify the grain boundary defects, but also facilitate the transport of injected carriers to the perovskite films via Pb-O coordinated bonds and inhibition of order-disorder transformation. This facial strategy for implementing ternary perovskite-based memoriz-ers with good ambient-air-stability is quite meaningful for high-density memory in harsh environments.(c) 2023 Elsevier Inc. All rights reserved.
Keyword ：
3D perovskite 3D perovskite Ambient-air-stability of memorizer Ambient-air-stability of memorizer Polyvinylpyrrolidone Polyvinylpyrrolidone Ternary memorizers Ternary memorizers Thermal tolerance of memorizer Thermal tolerance of memorizer
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| GB/T 7714 | Song, Kaiyue , Du, Lingling , Yue, Guoli et al. Simultaneously elevating the resistive switching level and ambient-air- stability of 3D perovskite (TAZ-H)PbBr3-based memory device by encapsulating into polyvinylpyrrolidone [J]. | JOURNAL OF COLLOID AND INTERFACE SCIENCE , 2023 , 642 : 408-420 . |
| MLA | Song, Kaiyue et al. "Simultaneously elevating the resistive switching level and ambient-air- stability of 3D perovskite (TAZ-H)PbBr3-based memory device by encapsulating into polyvinylpyrrolidone" . | JOURNAL OF COLLOID AND INTERFACE SCIENCE 642 (2023) : 408-420 . |
| APA | Song, Kaiyue , Du, Lingling , Yue, Guoli , Li, Tao , Li, Haohong , Zheng, Shoutian et al. Simultaneously elevating the resistive switching level and ambient-air- stability of 3D perovskite (TAZ-H)PbBr3-based memory device by encapsulating into polyvinylpyrrolidone . | JOURNAL OF COLLOID AND INTERFACE SCIENCE , 2023 , 642 , 408-420 . |
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The exploration of novel photo/thermal-responsive nonvolatile memorizers will be beneficial for energy-saving memories.Herein,new<110>-oriented perovskites using single template melamine,i.e.,[(MLAI-H2)(PbX4)]n(X=Br(α-1),Cl(α-2),MLAI=melamine)have been prepared and their structures upon irra-diation of visible light have been investigated.They have been fabricated as nonvolatile memory devices with structures of ITO/[(MLAI-H2)(PbX4)]n/PMMA/Ag(device-1:X=Br,device-2:X=Cl),which can ex-hibit unique visible light-triggered binary nonvolatile memory performances.Interestingly,the silent or working status can be monitored by visible chromisms.Furthermore,the light-triggered binary resistive switching mechanisms of these ITO/[(MLAI-H2)(PbX4)]n/PMMA/Ag memory devices have been clarified in terms of EPR,fluorescence,and single-crystal structural analysis.The presence of light-activated traps in<110>-oriented[(MLAI-H2)(PbX4)]n perovskites are dominated in the appearance of light-triggered resis-tive switching behaviors,based on which the inverted internal electrical fields can be established.Ac-cording to the structural analysis,the more distorted PbX6 octahedra,higher corrugated<110>-oriented perovskite sheets,and more condensed organic-inorganic packing in Br-containing perovskite are bene-ficial for the stabilization of light-activated traps,which lead to the better resistive switching behavior of device-1.This work can pave a new avenue for the establishment of novel energy-saving nonvolatile memorizers used in aerospace or military industries.
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| GB/T 7714 | Kaiyue Song , Panke Zhou , Lulu Zong et al. The visible light-triggered nonvolatile memory performances in melamine-decorated<110>-oriented lead halide perovskites:A photo-responsive structural evolution insight [J]. | 中国化学快报（英文版） , 2023 , 34 (3) : 526-530 . |
| MLA | Kaiyue Song et al. "The visible light-triggered nonvolatile memory performances in melamine-decorated<110>-oriented lead halide perovskites:A photo-responsive structural evolution insight" . | 中国化学快报（英文版） 34 . 3 (2023) : 526-530 . |
| APA | Kaiyue Song , Panke Zhou , Lulu Zong , Zhencong Yang , Haohong Li , Zhirong Chen . The visible light-triggered nonvolatile memory performances in melamine-decorated<110>-oriented lead halide perovskites:A photo-responsive structural evolution insight . | 中国化学快报（英文版） , 2023 , 34 (3) , 526-530 . |
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Polysulfide-based multilevel memorizers are promising as novel memorizers, in which the occurrence of S-n(2-) relaxation is key for their multilevel memory. However, the effects of crystal packing and the side group of organic ligands on S-n(2-) relaxation are still ambiguous. In this work, ionic [Zn(S-6)(2)Zn-2(Bipy)(2)SO4 (1), Zn(S-6)(2)Zn(Pmbipy)(3) (2)] and neutral [ZnS6(Ombipy) (3), ZnS6(Phen)(2) (4)] Zn/polysulfide/organic complexes with different packing modes and structures of organic ligands have been synthesized and were fabricated as memory devices. In both ionic and neutral Zn complexes, the S-6(2-) relaxation will be blocked by steric hindrances due to the packing of counter-cations and hydrogen-bond restrictions. Consequently, only the binary memory performances can be seen in FTO/1/Ag, FTO/2/Ag, and FTO/4/Ag, which originate from the more condensed packing of conjugated ligands upon electrical stimulus. Interestingly, FTO/3/Ag illustrates the unique thermally triggered reversible binary-ternary switchable memory performance. In detail, after introducing a methyl group on the 6 '-position of bipyridine in ZnS6(Ombipy) (3), the ring-to-chain relaxation of S-6(2-) anions at room temperature will be inhibited, but it can happen at a higher temperature of 120 degrees C, which has been verified by elongated S-S lengths and the strengthened C-HS hydrogen bond upon heating. The rules drawn in this work will provide a useful guide for the design of stimulus-responsive memorizers that can be applied in special industries such as automobile, oil, and gas industries.
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| GB/T 7714 | Lin, Xiaoli , Zhou, Panke , Gao, Yiqun et al. Implementation of Thermal-Triggered Binary-Ternary Switchable Memory Performance in Zn/polysulfide/organic Complex-Based Memorizers by Finely Modulating the S6 2- Relaxation [J]. | INORGANIC CHEMISTRY , 2023 , 63 (1) : 775-783 . |
| MLA | Lin, Xiaoli et al. "Implementation of Thermal-Triggered Binary-Ternary Switchable Memory Performance in Zn/polysulfide/organic Complex-Based Memorizers by Finely Modulating the S6 2- Relaxation" . | INORGANIC CHEMISTRY 63 . 1 (2023) : 775-783 . |
| APA | Lin, Xiaoli , Zhou, Panke , Gao, Yiqun , Li, Tao , Chen, Xiong , Li, Haohong et al. Implementation of Thermal-Triggered Binary-Ternary Switchable Memory Performance in Zn/polysulfide/organic Complex-Based Memorizers by Finely Modulating the S6 2- Relaxation . | INORGANIC CHEMISTRY , 2023 , 63 (1) , 775-783 . |
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The use of crystalline metal-organic complexes with definite structures as multilevel memories can enable explicit structure-property correlations, which is significant for designing the next generation of memories. Here, four Zn-polysulfide complexes with different degrees of conjugation have been fabricated as memory devices. ZnS6(L)(2)-based memories (L = pyridine and 3-methylpyridine) can exhibit only bipolar binary memory performances, but ZnS6(L)-based memories (L = 2,2 '-bipyridine and 1,10-phenanthroline) illustrate non-volatile ternary memory performances with high ON2/ON1/OFF ratios (10(4.22)/10(2.27)/1 and 10(4.85)/10(2.58)/1) and ternary yields (74% and 78%). Their ON1 states stem from the packing adjustments of organic ligands upon the injection of carriers, and the ON2 states are a result of the ring-to-chain relaxation of S-6(2-) anions. The lower conjugated degrees in ZnS6(L)(2) result in less compact packing; consequently, the adjacent S-6(2-) rings are too long to trigger the S-6(2-) relaxation. The deep structure-property correlation in this work provides a new strategy for implementing multilevel memory by triggering polysulfide relaxation based on the conjugated degree regulation of organic ligands.
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| GB/T 7714 | Zhou, Pan-Ke , Lin, Xiao-Li , Chee, Mun Yin et al. Switching the memory behaviour from binary to ternary by triggering S-6(2-) relaxation in polysulfide-bearing zinc-organic complex molecular memories [J]. | MATERIALS HORIZONS , 2023 , 10 (7) : 2535-2541 . |
| MLA | Zhou, Pan-Ke et al. "Switching the memory behaviour from binary to ternary by triggering S-6(2-) relaxation in polysulfide-bearing zinc-organic complex molecular memories" . | MATERIALS HORIZONS 10 . 7 (2023) : 2535-2541 . |
| APA | Zhou, Pan-Ke , Lin, Xiao-Li , Chee, Mun Yin , Lew, Wen Siang , Zeng, Tao , Li, Hao-Hong et al. Switching the memory behaviour from binary to ternary by triggering S-6(2-) relaxation in polysulfide-bearing zinc-organic complex molecular memories . | MATERIALS HORIZONS , 2023 , 10 (7) , 2535-2541 . |
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The searching for new memory that can work under harsh conditions will be significant for their application in some important fields such as geothermal, oil and aerospace industries. In this work, memory devices with simple sandwich structures using the g-C3N4 treated by different concentration acids as active layers have been fabricated, which exhibit non-volatile behaviors and bipolar switching characteristics. Protonation treatment can enhance the memory performance efficiently compared with un-protonized device. Among them, the device containing g-C3N4 treated with 8 M HCl presents the best resistive switching performance with ON/OFF ratio of 104 and good retention capability, which might be relative to its texture without violent tortuosity. In addition, the protonated g-C3N4-based memory devices exhibit good environmental robustness, including temperature and ionizing irradiation. Specially, its high tolerant temperature (454 ?) can also be assisted by doping BN for heat dissipation. Their good thermal/irradiating stabilities are assigned to the strong bond energy of C=N double bonds localized pi-conjugated tri-s-triazine rings. In all, the facial protonation treatment without any functionalization or supporting, the simple sandwich device structure and good environmental robustness endow their promising applications in aerospace and outdoor environment. (c) 2022 Elsevier B.V. All rights reserved.
Keyword ：
Environmental robustness Environmental robustness Nonvolatile memories Nonvolatile memories Protonated g-C3N4 Protonated g-C3N4 Resistive switching mechanism Resistive switching mechanism
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| GB/T 7714 | Zong, Lu-Lu , Song, Kai-Yue , Zhou, Pan-Ke et al. Protonated g-C3N4-based nonvolatile memories with good environmental robustness assisted by boron nitride [J]. | JOURNAL OF ALLOYS AND COMPOUNDS , 2022 , 905 . |
| MLA | Zong, Lu-Lu et al. "Protonated g-C3N4-based nonvolatile memories with good environmental robustness assisted by boron nitride" . | JOURNAL OF ALLOYS AND COMPOUNDS 905 (2022) . |
| APA | Zong, Lu-Lu , Song, Kai-Yue , Zhou, Pan-Ke , Yang, Zhen-Cong , Zheng, Shou-Tian , Li, Hao-Hong et al. Protonated g-C3N4-based nonvolatile memories with good environmental robustness assisted by boron nitride . | JOURNAL OF ALLOYS AND COMPOUNDS , 2022 , 905 . |
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Strong electron-poor cation diphenyliodonium was firstly incorporated with transition metal thiocyanates to obtain three new photo-sensitive hybrids, (DPI)(3)[Mn(SCN)(5)(H2O)]center dot 0.25H(2)O (alpha-1), {(DPI)(2)[Ni(SCN)(4)]}(n) (alpha-2) and ((DPI)(6)[Cd-3(SCN)(12)]}(n) (alpha-3) (DPI+ = diphenyliodonium), whose photo-induced structural transformations to corresponding beta-phases have been disclosed. After irradiating, all the MX6 octahedrons stretch clearly along the M-S directions, and C-H center dot center dot center dot pi interactions and the secondary hypervalent I(III)center dot center dot center dot S halogen bonds are weakened. The hydrogen bonds are also weakened, except for those in 1. Time-dependent solid-state UV-vis spectra, PXRD patterns and EPR spectra before and after irradiating were obtained to prove the irreversible structural transformations of the hybrids, during which minor structural adjustments occurred. Consequently, the fluorescence emission changed from blue (alpha-3) to yellow (beta-3) upon irradiation. Interestingly, obvious photomagnetization on 1 with a chi T-M increase of 14.89% and photodemagnetization on 2 with a chi T-M decrease of 12.82% can be observed. Finally, these hybrids can be used as long-term inkless and erasable print media. This work demonstrates the potential application of diphenyliodonium-based hybrids in some photo-sensitive functional materials.
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| GB/T 7714 | Song, Kai-Yue , Yang, Zhen-Cong , Zhou, Pan-Ke et al. Photo-sensitive hybrids constructed from diphenyliodonium and metal-thiocyanates: photo-induced structure and property transformations [J]. | CRYSTENGCOMM , 2022 , 24 (6) : 1237-1247 . |
| MLA | Song, Kai-Yue et al. "Photo-sensitive hybrids constructed from diphenyliodonium and metal-thiocyanates: photo-induced structure and property transformations" . | CRYSTENGCOMM 24 . 6 (2022) : 1237-1247 . |
| APA | Song, Kai-Yue , Yang, Zhen-Cong , Zhou, Pan-Ke , Zong, Lu-Lu , Li, Hao-Hong , Jiang, Rong et al. Photo-sensitive hybrids constructed from diphenyliodonium and metal-thiocyanates: photo-induced structure and property transformations . | CRYSTENGCOMM , 2022 , 24 (6) , 1237-1247 . |
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