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学者姓名：林立华
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Abstract ：
In the rapidly evolving Metaverse, enhancing user immersion through clear, lifelike, and ergonomic near-eye displays is crucial. However, existing rigid near-eye displays encounter challenges such as insufficient resolution, limited adaptability, and suboptimal visual experiences. To address these issues, a strategic shift is proposed to flexible ultrahigh-resolution (FUR) displays, which combine ultrahigh resolution with the ability to conform to individual eye curvature for a more realistic field of view. FUR quantum dot light-emitting diodes (FUR-QLEDs) featuring 9072 pixels per inch (PPI), a maximum external quantum efficiency (EQE) of 15.7%, and peak brightness of 15 163 cd m−2 are achieved through the integration of nanoimprinting and surface modification technologies. The degradation mechanism of FUR-QLEDs under bending fatigue tests is investigated, identifying the high elastic modulus of the insulating patterned film as the primary cause through theoretical analysis, simulation, and experimental characterizations. Optimizing the elastic modulus of the patterned film enabled to maintain 91% of its initial brightness after 400 bending cycles, demonstrating exceptional bending stability and durability of FUR-QLEDs. © 2024 Wiley-VCH GmbH.
Keyword ：
bending stability bending stability durability durability flexible flexible high performance high performance high-resolution high-resolution QLEDs QLEDs
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| GB/T 7714 | Lin, L. , Dong, Z. , Wang, J. et al. Flexible Ultrahigh-Resolution Quantum-Dot Light-Emitting Diodes [J]. | Advanced Functional Materials , 2024 , 34 (48) . |
| MLA | Lin, L. et al. "Flexible Ultrahigh-Resolution Quantum-Dot Light-Emitting Diodes" . | Advanced Functional Materials 34 . 48 (2024) . |
| APA | Lin, L. , Dong, Z. , Wang, J. , Hu, H. , Chen, W. , Guo, T. et al. Flexible Ultrahigh-Resolution Quantum-Dot Light-Emitting Diodes . | Advanced Functional Materials , 2024 , 34 (48) . |
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Photosensitive quantum dot light-emitting diodes (PSQLEDs) possess the dual capabilities of generating and detecting light signals, which is of significant importance for the development of miniaturized and integrated optoelectronic devices. However, the state-of-the-art PSQLEDs can only detect light signals within a certain wavelength range, and require switching between the two functions under different bias voltage directions. In this work, The use of a ZnO/quantum dots (QDs)/ZnO multilayer (ZQZ ML) architecture as both the electron transport layer and the photosensitive layer is pioneered. The QDs in this structure are composed of narrow-bandgap lead sulfide QDs and wide-bandgap cadmium selenide QDs, successfully realizing a unique PSQLED device with C photosensitive characteristics. As a result, the as-fabricated device can respond to illumination from 365 to 1300 nm, and the device achieves a photoresponse rate of 20.9 mA W-1 in self-powered mode to UV light. After UV light irradiation, the maximum external quantum efficiency and maximum luminance of device reached 11.8% and 64,549 cd m-2, respectively. The device shows a record-high luminance ON/OFF ratio of 5500%, which is beneficial for high contrast and accurate information display. A quantum dot light-emitting diode (QLED) is developed with UV-vis-NIR photosensitive characteristics based on a ZnO/QDs/ZnO multilayer structure. This device can respond to UV to NIR signals in self-powered mode. Additionally, after UV light irradiation, the device achieves a maximum external quantum efficiency of 11.8% and a luminance of 64,549 cd m-2, with a record-high luminance ON/OFF ratio of 5500%. image
Keyword ：
broad-spectrum detection broad-spectrum detection dual-functional dual-functional light-emitting device light-emitting device photosensitive photosensitive quantum dot quantum dot
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| GB/T 7714 | Pan, Youjiang , Hu, Hailong , Yang, Kaiyu et al. Efficient Dual-Functional Quantum Dot Light-Emitting Diodes with UV-Vis-NIR Broad-Spectrum Photosensitivity [J]. | ADVANCED OPTICAL MATERIALS , 2024 , 12 (26) . |
| MLA | Pan, Youjiang et al. "Efficient Dual-Functional Quantum Dot Light-Emitting Diodes with UV-Vis-NIR Broad-Spectrum Photosensitivity" . | ADVANCED OPTICAL MATERIALS 12 . 26 (2024) . |
| APA | Pan, Youjiang , Hu, Hailong , Yang, Kaiyu , Chen, Wei , Lin, Lihua , Guo, Tailiang et al. Efficient Dual-Functional Quantum Dot Light-Emitting Diodes with UV-Vis-NIR Broad-Spectrum Photosensitivity . | ADVANCED OPTICAL MATERIALS , 2024 , 12 (26) . |
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Abstract ：
With pixel miniaturization, the performance of high-resolution quantum dot light-emitting diodes (QLEDs) usually degrades. Considering the dimension of ultrasmall pixels, herein, a barrier architecture based on localized surface plasmon resonance (LSPR) that promotes the radiative recombination of neighboring quantum dots is rationally designed to improve the device performance. Au nanoparticles (NPs) are embedded in an insulating polymer to form a honeycomb-patterned barrier layer via the nanoimprint process. Each pixel fabricated in the void area (average diameter of 1.5 mu m) of the barrier layer is surrounded by a number of LSPR-NPs to enhance the luminescence. The resultant green QLEDs with a resolution of 9027 pixels per inch show a maximum external quantum efficiency of 11.1%, a 42.8% enhancement compared to the control device. Additionally, the lifetime of high-resolution QLEDs is obviously improved by the LSPR effect.
Keyword ：
Au nanoparticles Au nanoparticles high-resolution high-resolution light-emitting diodes light-emitting diodes localized surfaceplasmon resonance localized surfaceplasmon resonance quantum dot quantum dot
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| GB/T 7714 | Zhang, Xu , Hu, Hailong , Qie, Yuan et al. Boosting the Efficiency of High-Resolution Quantum Dot Light-Emitting Devices Based on Localized Surface Plasmon Resonance [J]. | ACS APPLIED MATERIALS & INTERFACES , 2024 , 16 (10) : 13219-13224 . |
| MLA | Zhang, Xu et al. "Boosting the Efficiency of High-Resolution Quantum Dot Light-Emitting Devices Based on Localized Surface Plasmon Resonance" . | ACS APPLIED MATERIALS & INTERFACES 16 . 10 (2024) : 13219-13224 . |
| APA | Zhang, Xu , Hu, Hailong , Qie, Yuan , Lin, Lihua , Guo, Tailiang , Li, Fushan . Boosting the Efficiency of High-Resolution Quantum Dot Light-Emitting Devices Based on Localized Surface Plasmon Resonance . | ACS APPLIED MATERIALS & INTERFACES , 2024 , 16 (10) , 13219-13224 . |
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由于量子点优异的材料特性，包括可调的能带间隙、高量子产率、高稳定性和可低成本地溶液加工等，其在显示领域引发了浓厚的兴趣和研究热潮。近年来，随着全世界对高质量显示的需求日益增长，特别是随着虚拟/增强现实（VR/AR）等近眼显示技术的兴起，对高亮度、高分辨率、高效率以及低功耗的显示技术提出了更高的要求。本文全面探讨了高分辨率量子点图案化技术，深入解析它们的工艺流程，并详细阐述它们在量子点显示器件中的各种应用。此外，还概述了高分辨率量子点图案化技术在实际应用中所面临的主要挑战。我们认为，要将高分辨率量子点图案化技术真正地应用到实际设备中，必须全面考虑各种因素，不仅包括从图案化技术出发，同时还涉及到从材料选择和器件结构设计等多个角度的深入思考和策划。本综述可为高分辨率量子点图案化技术行业的发展和研究提供有价值的参考。
Keyword ：
图案化技术 图案化技术 显示技术 显示技术 量子点 量子点 高分辨率 高分辨率
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| GB/T 7714 | 潘友江 , 林立华 , 杨开宇 et al. 高分辨率量子点图案化技术 [J]. | 光学学报 , 2024 , 44 (02) : 44-59 . |
| MLA | 潘友江 et al. "高分辨率量子点图案化技术" . | 光学学报 44 . 02 (2024) : 44-59 . |
| APA | 潘友江 , 林立华 , 杨开宇 , 陈伟 , 胡海龙 , 郭太良 et al. 高分辨率量子点图案化技术 . | 光学学报 , 2024 , 44 (02) , 44-59 . |
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High-resolution (HR) displays are in much demand as metaverse makes near-eye displays the most important equipment in recent years. Based on wave optics, a microscale optical crosstalk model for HR display devices is proposed. It is indicated that the pixel pattern will be distorted over long-distance transmission in light-emitting devices with inner periodic microstructure, and the optical distortion is related to the size of pixels and the distance from the emitting layer to the outlet. A bottom emissive HR red quantum dot light-emitting diode (QLED) array is introduced to confirm the model and a top emission scheme is provided to effectively reduce the transmission distance and suppress the pixel distortion. Optical-crosstalk-free pixels are finally achieved by adopting the optimized top-emission cathode thickness of 30 nm. This study provides a direction for realizing high-quality and high-resolution micro-displays. The optical distortion is related to the size of pixels and the distance from the emitting layer to the outlet. A top emission scheme is provided to effectively reduce the transmission distance and suppress the pixel distortion. Optical-crosstalk-free pixels are achieved by adopting the optimized top emission cathode thickness of 30 nm. image
Keyword ：
display distortion display distortion high-resolution high-resolution optical crosstalk optical crosstalk QLED QLED
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| GB/T 7714 | Zheng, Yueting , Lin, Lihua , Hu, Hailong et al. Optical Crosstalk Suppression in High-Resolution Quantum Dot Light-Emitting Devices [J]. | ADVANCED OPTICAL MATERIALS , 2024 , 12 (15) . |
| MLA | Zheng, Yueting et al. "Optical Crosstalk Suppression in High-Resolution Quantum Dot Light-Emitting Devices" . | ADVANCED OPTICAL MATERIALS 12 . 15 (2024) . |
| APA | Zheng, Yueting , Lin, Lihua , Hu, Hailong , Guo, Tailiang , Li, Fushan . Optical Crosstalk Suppression in High-Resolution Quantum Dot Light-Emitting Devices . | ADVANCED OPTICAL MATERIALS , 2024 , 12 (15) . |
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Quantum dot light-emitting diodes (QLEDs) are emerging as promising candidates for next-generation displays, with the current efficiency and stability of both red and green QLEDs meeting display requirements. However, the efficiency and stability of blue QLEDs, particularly pure blue iterations, significantly lag behind those of their red and green counterparts, thus hindering the widespread adoption of full-color QLEDs. Here, we introduce a strategy to improve the efficiency and stability of pure blue zinc selenide (ZnSe) QLEDs by adding a new ionic liquid (IL) salt, 1-butyl-3-methylimidazolium phosphorus hexafluoride (BMIMPF6), into the hole transport layer (HTL). This IL salt acts as an effective p-dopant, enhancing charge mobility while also increasing the surface potentials of the HTL for better alignment of energy bands at the interface. This results in a significant improvement in device performance, with the external quantum efficiency (EQE) increasing from 4.90% to 7.02%, setting a high performance for cadmium-free pure-blue ZnSe QLEDs. Additionally, the device's operational lifetime, measured as the time taken for luminance to drop to 50% (T-50) at 100 cd m(-2), sees a remarkable six-fold increase, reaching 177 hours. Our work represents a significant advancement in developing cadmium-free pure-blue ZnSe QLEDs and offers valuable insights for designing efficient and stable quantum dot-based displays.
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| GB/T 7714 | Lin, Lihua , Ye, Xiaoxue , Luo, Zhiqi et al. Enhancing the efficiency and stability of ZnSe pure blue quantum dot light-emitting diodes via ionic liquid doping [J]. | JOURNAL OF MATERIALS CHEMISTRY C , 2024 , 12 (28) : 10408-10416 . |
| MLA | Lin, Lihua et al. "Enhancing the efficiency and stability of ZnSe pure blue quantum dot light-emitting diodes via ionic liquid doping" . | JOURNAL OF MATERIALS CHEMISTRY C 12 . 28 (2024) : 10408-10416 . |
| APA | Lin, Lihua , Ye, Xiaoxue , Luo, Zhiqi , Chen, Weiguo , Guo, Tailiang , Hu, Hailong et al. Enhancing the efficiency and stability of ZnSe pure blue quantum dot light-emitting diodes via ionic liquid doping . | JOURNAL OF MATERIALS CHEMISTRY C , 2024 , 12 (28) , 10408-10416 . |
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Abstract ：
In the rapidly evolving Metaverse, enhancing user immersion through clear, lifelike, and ergonomic near-eye displays is crucial. However, existing rigid near-eye displays encounter challenges such as insufficient resolution, limited adaptability, and suboptimal visual experiences. To address these issues, a strategic shift is proposed to flexible ultrahigh-resolution (FUR) displays, which combine ultrahigh resolution with the ability to conform to individual eye curvature for a more realistic field of view. FUR quantum dot light-emitting diodes (FUR-QLEDs) featuring 9072 pixels per inch (PPI), a maximum external quantum efficiency (EQE) of 15.7%, and peak brightness of 15 163 cd m-2 are achieved through the integration of nanoimprinting and surface modification technologies. The degradation mechanism of FUR-QLEDs under bending fatigue tests is investigated, identifying the high elastic modulus of the insulating patterned film as the primary cause through theoretical analysis, simulation, and experimental characterizations. Optimizing the elastic modulus of the patterned film enabled to maintain 91% of its initial brightness after 400 bending cycles, demonstrating exceptional bending stability and durability of FUR-QLEDs. Describing the advancement of flexible ultrahigh-resolution-quantum dot light-emitting diodes and their integration with nanoimprinting and surface modification technologies aimed at mitigating the limitations of contemporary near-eye display technologies in virtual reality and augmented reality immersion within the dynamic context of the Metaverse, thereby augmenting user experiences. image
Keyword ：
bending stability bending stability durability durability flexible flexible high performance high performance high-resolution high-resolution QLEDs QLEDs
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| GB/T 7714 | Lin, Lihua , Dong, Zhihua , Wang, Jie et al. Flexible Ultrahigh-Resolution Quantum-Dot Light-Emitting Diodes [J]. | ADVANCED FUNCTIONAL MATERIALS , 2024 , 34 (48) . |
| MLA | Lin, Lihua et al. "Flexible Ultrahigh-Resolution Quantum-Dot Light-Emitting Diodes" . | ADVANCED FUNCTIONAL MATERIALS 34 . 48 (2024) . |
| APA | Lin, Lihua , Dong, Zhihua , Wang, Jie , Hu, Hailong , Chen, Weiguo , Guo, Tailiang et al. Flexible Ultrahigh-Resolution Quantum-Dot Light-Emitting Diodes . | ADVANCED FUNCTIONAL MATERIALS , 2024 , 34 (48) . |
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钙钛矿量子点(PQD)的喷墨打印技术在全彩显示应用中具有巨大潜力,但一些关键问题仍然影响其发光效率,例如不平衡的载流子注入、低质量的钙钛矿薄膜以及PQD自身的非辐射复合通道等.为解决这些问题,我们引入了界面修饰层苯乙基溴化铵(PEABr)以平衡器件的载流子传输.PEABr与钙钛矿二元溶剂(甲苯、萘)具有相似的结构,可改善PQD的印刷特性和成膜能力,并有效钝化PQD膜的Br-空位和界面缺陷.基于这一策略,成功实现了在414 cd/m²亮度下,最大外量子效率(EQE)达到8.82％、电流效率(CE)达到29.15 cd/A的喷墨打印钙钛矿量子点发光二极管(PeLED),为喷墨打印技术在未来显示领域中的应用提供了有益的思路.
Keyword ：
喷墨打印 喷墨打印 电致发光器件 电致发光器件 界面修饰 界面修饰 钙钛矿量子点 钙钛矿量子点
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| GB/T 7714 | 陈逸群 , 林立华 , 胡海龙 et al. 基于多功能苯乙基溴化铵修饰层的喷墨打印钙钛矿量子点发光二极管 [J]. | 发光学报 , 2024 , 45 (8) : 1343-1353 . |
| MLA | 陈逸群 et al. "基于多功能苯乙基溴化铵修饰层的喷墨打印钙钛矿量子点发光二极管" . | 发光学报 45 . 8 (2024) : 1343-1353 . |
| APA | 陈逸群 , 林立华 , 胡海龙 , 李福山 . 基于多功能苯乙基溴化铵修饰层的喷墨打印钙钛矿量子点发光二极管 . | 发光学报 , 2024 , 45 (8) , 1343-1353 . |
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胶体量子点材料因其优良的窄发射光谱、可调发射波长、高发光效率和优异的稳定性而被广泛研究，且同时具有溶液可加工性使得量子点发光二极管（Quantum dot light-emitting diode, QLED）具有广泛的适用性和应用。然而，器件自身存在的基底模式导致QLED器件大量光子被限制在内部无法利用。本文基于纳米压印工艺同时利用聚二甲基硅氧烷（Polydimethylsiloxane,PDMS）材料本身的表面结合能开发出溶剂自浸润式纳米压印工艺，对压力依赖度低的同时简化了工艺流程，制备出高质量周期性的1.3,1,0.5μm三种尺寸的微纳结构图案层，对红、绿、蓝三色QLED器件进行耦合实现光提取。在这种情况下，1.3μm微纳结构耦合绿光QLED器件亮度达到715 069 cd·m~(-2)，最大外量子效率（External quantum efficiency,EQE）和电流效率分别提升至12.5%和57.3 cd·A~(-1);1μm尺寸耦合的蓝光QLED器件各电学性能提升接近200%;0.5μm尺寸耦合红光QLED器件EQE也从17.3%提升至20.5%。并通过角分布测试，证明微纳结构不会对QLED器件发光强度造成影响，仍然接近朗伯体发射。本工作提出的溶剂自浸润式纳米压印工艺及QLED光提取方法，为QLED的性能提升提供了一条简单有效的途径。
Keyword ：
光学仿真 光学仿真 纳米压印 纳米压印 耦合光学性能 耦合光学性能 量子点发光二极管 量子点发光二极管
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| GB/T 7714 | 梁龙 , 郑悦婷 , 林立华 et al. 自浸润式纳米压印耦合实现量子点发光二极管性能提升 [J]. | 发光学报 , 2024 , 45 (04) : 613-620 . |
| MLA | 梁龙 et al. "自浸润式纳米压印耦合实现量子点发光二极管性能提升" . | 发光学报 45 . 04 (2024) : 613-620 . |
| APA | 梁龙 , 郑悦婷 , 林立华 , 胡海龙 , 李福山 . 自浸润式纳米压印耦合实现量子点发光二极管性能提升 . | 发光学报 , 2024 , 45 (04) , 613-620 . |
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Inkjet printing technology of perovskite quantum dots（PQD）hold great potential in full-color display applications，but several key issues still affect their efficiency，such as unbalanced charge carrier injection，low-quality perovskite films，and non-radiative recombination pathways of PQDs themselves. To address these issues，we introduce an interface improvement layer of Phenethylammonium bromide（PEABr）to balance the charge carrier transport in devices. PEABr has a similar structure to the binary solvent of perovskite（toluene，naphthalene），which can improve the printing characteristics and film-forming ability of PQDs and effectively passivate the Br- vacancies and interface defects of PQD films. Based on this strategy，we successfully achieved inkjet-printed perovskite quantum dot light-emitting diodes（PeLEDs）with a maximum external quantum efficiency（EQE）of 8. 82% and a current efficiency（CE）of 29. 15 cd/A at a brightness of 414 cd/m2，providing beneficial insights for inkjet printing technology in future display applications. © 2024 Editorial Office of Chinese Optics. All rights reserved.
Keyword ：
inkjet printing inkjet printing interface modification interface modification light-emitting devices light-emitting devices perovskite quantum dots perovskite quantum dots
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| GB/T 7714 | Chen, Y. , Lin, L. , Hu, H. et al. Inkjet Printed Perovskite Quantum Dot Light-emitting Diodes Based on Multifunctional Phenethylammonium Bromide Modification Layer; [基 于 多 功 能 苯 乙 基 溴 化 铵 修 饰 层 的 喷 墨 打 印钙 钛 矿 量 子 点 发 光 二 极 管] [J]. | Chinese Journal of Luminescence , 2024 , 45 (8) : 1343-1353 . |
| MLA | Chen, Y. et al. "Inkjet Printed Perovskite Quantum Dot Light-emitting Diodes Based on Multifunctional Phenethylammonium Bromide Modification Layer; [基 于 多 功 能 苯 乙 基 溴 化 铵 修 饰 层 的 喷 墨 打 印钙 钛 矿 量 子 点 发 光 二 极 管]" . | Chinese Journal of Luminescence 45 . 8 (2024) : 1343-1353 . |
| APA | Chen, Y. , Lin, L. , Hu, H. , Li, F. . Inkjet Printed Perovskite Quantum Dot Light-emitting Diodes Based on Multifunctional Phenethylammonium Bromide Modification Layer; [基 于 多 功 能 苯 乙 基 溴 化 铵 修 饰 层 的 喷 墨 打 印钙 钛 矿 量 子 点 发 光 二 极 管] . | Chinese Journal of Luminescence , 2024 , 45 (8) , 1343-1353 . |
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