Query:
学者姓名:张永爱
Refining:
Year
Type
Indexed by
Source
Complex
Former Name
Co-
Language
Clean All
Abstract :
This study presents a metal-semiconductor-metal (MSM) and micro-light-emitting diode (mu LED) integrated device (MSM-mu LED) without additional epitaxial growth, which demonstrates excellent performance in ultraviolet (UV) detection and optoelectronic modulation. By employing an approach that combines vertical and lateral integration, the rapid response characteristic of the MSM is utilized to control the current required to activate the mu LED, thereby enhancing the LED's luminous efficiency. The MSM-mu LED device was simulated using Silvaco TCAD software, by optimizing the device structure parameters, such as doping concentration, material thickness, and electrode length, and adjusting the wavelength and intensity of ultraviolet light, the photocurrent value was enhanced to be approximately 6 orders of magnitude higher than the dark current, successfully achieving microampere-level currents to illuminate the mu LED. Under irradiation at 365 nm wavelength, the device exhibited maximum photocurrent. Experimental validation confirmed that MSM-mu LED exhibited significant photocurrent enhancement under UV illumination, indicating its promising potential for high-performance applications in environmental monitoring, high-speed optical communication, and biomedical imaging.
Keyword :
GaN GaN homogeneous integration homogeneous integration micro LED micro LED MSM-mu LED MSM-mu LED UV UV
Cite:
Copy from the list or Export to your reference management。
GB/T 7714 | Chen, Chao , Su, Wenjuan , Lin, Juncheng et al. Design and Verification of Optoelectronic Performance of Full GaN MSM and μLED Homogeneous Integrated Devices [J]. | ACS APPLIED ELECTRONIC MATERIALS , 2025 , 7 (1) : 552-559 . |
MLA | Chen, Chao et al. "Design and Verification of Optoelectronic Performance of Full GaN MSM and μLED Homogeneous Integrated Devices" . | ACS APPLIED ELECTRONIC MATERIALS 7 . 1 (2025) : 552-559 . |
APA | Chen, Chao , Su, Wenjuan , Lin, Juncheng , Fan, Huichen , Lin, Yibin , Ye, Jinyu et al. Design and Verification of Optoelectronic Performance of Full GaN MSM and μLED Homogeneous Integrated Devices . | ACS APPLIED ELECTRONIC MATERIALS , 2025 , 7 (1) , 552-559 . |
Export to | NoteExpress RIS BibTex |
Version :
Abstract :
Microlight-emitting diodes (Micro-LEDs) offer numerous unique advantages in terms of materials, devices, technologies, and process applications. To enable control of LEDs with low current input, a heterojunction integrated light-emitting transistor (H-LET) device is proposed. By vertically integrating a heterojunction bipolar transistor (HBT) with a Micro-LED, a multifunctional optoelectronic device capable of light emission, modulation, and driving functions is achieved. The structure incorporates wide-bandgap aluminum gallium nitride (AlGaN) material into the emission region, forming a heterojunction with GaN. This significantly enhances electron injection efficiency and current gain. Under low current drive, the H-LET device achieves a current gain of up to 650. This results in superior current regulation and high-frequency response compared to homojunction light-emitting transistors. The H-LET shows significant potential for applications in smart lighting, high-definition displays, radio frequency systems, and high-speed communication. © 2025 Wiley-VCH GmbH.
Keyword :
Aluminum gallium nitride Aluminum gallium nitride Gallium alloys Gallium alloys Gallium nitride Gallium nitride Heterojunction bipolar transistors Heterojunction bipolar transistors High electron mobility transistors High electron mobility transistors Integrated circuit design Integrated circuit design Junction gate field effect transistors Junction gate field effect transistors Laser beams Laser beams Network-on-chip Network-on-chip
Cite:
Copy from the list or Export to your reference management。
GB/T 7714 | Lin, Juncheng , Su, Wenjuan , Chen, Chao et al. Structural Design and Optoelectronic Performance Study of Heterojunction Light-Emitting Transistor [J]. | Physica Status Solidi (A) Applications and Materials Science , 2025 , 222 (10) . |
MLA | Lin, Juncheng et al. "Structural Design and Optoelectronic Performance Study of Heterojunction Light-Emitting Transistor" . | Physica Status Solidi (A) Applications and Materials Science 222 . 10 (2025) . |
APA | Lin, Juncheng , Su, Wenjuan , Chen, Chao , Lin, Yibin , Ye, Jinyu , Zhou, Xiongtu et al. Structural Design and Optoelectronic Performance Study of Heterojunction Light-Emitting Transistor . | Physica Status Solidi (A) Applications and Materials Science , 2025 , 222 (10) . |
Export to | NoteExpress RIS BibTex |
Version :
Abstract :
With the development of the economy and science, information technology has become increasingly integrated into modern life, making information encryption crucial. The molecular arrangement of cholesteric liquid crystals (CLCs) exhibits a unique helical structure, which provides excellent bistability. This molecular arrangement can be changed under the action of an electric field, consequently changing the transmittance of light. The triboelectric nanogenerator (TENG) is a novel energy-harvesting system that can convert mechanical energy into electrical energy to power small devices. In this research, the optical properties of a CLC and the energy independence of a TENG were utilized to support an information encryption system for data security, and in this paper, a feather-based, horizontal, sliding TENG that offers a voltage range adjustable between 30 and 300 V to facilitate switching between the planar and the focal cone textures of CLCs is proposed. Moreover, when a self-powered CLC was combined with a convolutional neural network, the accuracy of message transmission reached more than 98 %; thus, a message encryption transmission system with good portability and low cost was realized.
Keyword :
Cholesteric liquid crystals Cholesteric liquid crystals Encrypted information Encrypted information Self-powered Self-powered Smart glass Smart glass Triboelectric nanogenerator Triboelectric nanogenerator
Cite:
Copy from the list or Export to your reference management。
GB/T 7714 | Chen, Wandi , Kang, Jiaxin , Zhang, Jiazhen et al. An information display and encrypted transmission system based on a triboelectric nanogenerator and a cholesteric liquid crystal [J]. | NANO ENERGY , 2025 , 134 . |
MLA | Chen, Wandi et al. "An information display and encrypted transmission system based on a triboelectric nanogenerator and a cholesteric liquid crystal" . | NANO ENERGY 134 (2025) . |
APA | Chen, Wandi , Kang, Jiaxin , Zhang, Jiazhen , Zhang, Yongai , Zhou, Xiongtu , Yan, Qun et al. An information display and encrypted transmission system based on a triboelectric nanogenerator and a cholesteric liquid crystal . | NANO ENERGY , 2025 , 134 . |
Export to | NoteExpress RIS BibTex |
Version :
Abstract :
Wind conditions are crucial in agricultural production, and wind vectors play a significant role in agricultural planting plans. However, traditional anemometers rely on external power sources such as lithium batteries, while wind energy in farmlands is usually neglected. This paper proposes an intelligent wind vector monitoring system based on a dual-module triboelectric nanogenerator (DM-TENG), which consists of a fan-blade type soft-contact triboelectric nanogenerator (FBTSC-TENG) and a disc-shaped triboelectric nanogenerator (DS-TENG). FBTSC-TENG collects wind energy in the environment to power the temperature and humidity sensors, while determining wind speed through the frequency of voltage pulses. DS-TENG can monitor wind direction, identifying 8 wind directions through output pulse signals and deep learning algorithms. Therefore, the DM-TENG proposed in this study is expected to play a significant role in the field of smart agriculture in the future.
Keyword :
smartagriculture smartagriculture triboelectric nanogenerator triboelectric nanogenerator wind direction wind direction wind energy wind energy wind vector monitoring system wind vector monitoring system
Cite:
Copy from the list or Export to your reference management。
GB/T 7714 | Tang, Heng , Chen, Wandi , Peng, Zhigang et al. Intelligent Wind Vector Monitoring System Based on Wind Energy Harvesting [J]. | ACS APPLIED ELECTRONIC MATERIALS , 2025 , 7 (2) : 901-909 . |
MLA | Tang, Heng et al. "Intelligent Wind Vector Monitoring System Based on Wind Energy Harvesting" . | ACS APPLIED ELECTRONIC MATERIALS 7 . 2 (2025) : 901-909 . |
APA | Tang, Heng , Chen, Wandi , Peng, Zhigang , Zhang, Yu , Zhou, Xiongtu , Wu, Chaoxing et al. Intelligent Wind Vector Monitoring System Based on Wind Energy Harvesting . | ACS APPLIED ELECTRONIC MATERIALS , 2025 , 7 (2) , 901-909 . |
Export to | NoteExpress RIS BibTex |
Version :
Abstract :
Developing micro- and nano-scaled full-color pixelation is crucial for advancing future display technologies. Transmission metasurface structural color (TMSC) shows promise for integrated displays due to its high resolution and stability. However, improving the color gamut and tunability of TMSC remains a challenge. In this study, we modified the conventional single-metal metagrating (Ag-Al2O3) by replacing the Ag grating layer with an Al-Al2O3-Ag hybrid grating layer. This novel TMSC based on the mixed metagrating achieves unique transmission spectra under TM polarization light, featuring a single peak with minimal sidebands, and near-zero transmission under TE polarization light. This design enables ultra-high color purity and switchable colors through polarization adjustment. The metagrating effectively blocks transmission sidebands by leveraging interactions between the top Al grating layer and the Al2O3 sandwich grating layer. Under TM polarization light, the TMSC using this mixed metagrating covers an expansive color gamut-173% sRGB space and 124% Adobe RGB space-nearly achieving full hue and high purity. Conversely, under TE polarization light, the TMSC based on the mixed metagrating achieves near-zero transmission, ideal for a perfect dark mode. Moreover, the proposed TMSC design allows for full hue adjustment of individual pixels by varying the incident angle under TM polarization light. Under TE polarization light, the dark mode remains stable regardless of incident angle variations. The metagrating holds significant potential for applications in displays, high-density information storage, optical encryption, and beyond.
Keyword :
Dynamic display Dynamic display Full colorization Full colorization Large color gamut Large color gamut Metagrating Metagrating Transmission metasurface structural color Transmission metasurface structural color
Cite:
Copy from the list or Export to your reference management。
GB/T 7714 | Zhang, Jiawei , Peng, Yuyan , Zou, Zhenyou et al. Ultraly high saturation and high contrast tunable transmission metagrating structural color for dynamic display [J]. | OPTICS COMMUNICATIONS , 2025 , 577 . |
MLA | Zhang, Jiawei et al. "Ultraly high saturation and high contrast tunable transmission metagrating structural color for dynamic display" . | OPTICS COMMUNICATIONS 577 (2025) . |
APA | Zhang, Jiawei , Peng, Yuyan , Zou, Zhenyou , Weng, Shuchen , Yang, Weiquan , Zhou, Xiongtu et al. Ultraly high saturation and high contrast tunable transmission metagrating structural color for dynamic display . | OPTICS COMMUNICATIONS , 2025 , 577 . |
Export to | NoteExpress RIS BibTex |
Version :
Abstract :
The wavelength tunable and environmentally friendly InP quantum dots are considered one of the most powerful alternatives to cadmium-based quantum dots, and the luminescent devices prepared with them also show great potential. There is still room for improvement in the synthesis methods and device applications of InP based quantum dots. In this work, we report one pot synthesis route for InP/ZnSe/ZnSeS/ZnS green QDs based on tris (dimethylamino)phosphine (DMP) phosphorus by using the strategy of multi shell coating and gradient heating to reduce surface defects of quantum dots. The shell structure, dosage, and growth temperature have all been taken into account in order to explore better performance of InP QDs. The synthesized green quantum dots have 86 % PLQY and a full width at half maximum of 36 nm. In addition, the synthesized green InP quantum dots are applied in AC QLED devices. The experimental results show that the luminescence intensity is affected by the driving voltage and frequency, which is similar to the working mode of non-carrier-injected emitting devices. And there is a matching value between the voltage and frequency.
Keyword :
Alternating current Alternating current Aminophosphine Aminophosphine Indium phosphide Indium phosphide Quantum dots Quantum dots Single-terminal carrier-injection Single-terminal carrier-injection
Cite:
Copy from the list or Export to your reference management。
GB/T 7714 | Lin, Jianpu , Zhang, Shengjie , Du, Lingfeng et al. Improved InP/ZnSe/ZnSeS/ZnS quantum dots for single-terminal carrier-injection light-emitting devices [J]. | OPTICAL MATERIALS , 2025 , 159 . |
MLA | Lin, Jianpu et al. "Improved InP/ZnSe/ZnSeS/ZnS quantum dots for single-terminal carrier-injection light-emitting devices" . | OPTICAL MATERIALS 159 (2025) . |
APA | Lin, Jianpu , Zhang, Shengjie , Du, Lingfeng , Zhang, Baiquan , Zhou, Xiongtu , Zhang, Yongai et al. Improved InP/ZnSe/ZnSeS/ZnS quantum dots for single-terminal carrier-injection light-emitting devices . | OPTICAL MATERIALS , 2025 , 159 . |
Export to | NoteExpress RIS BibTex |
Version :
Abstract :
以超高密度Cu/Sn微凸点和Cu/SnAg微凸点为研究对象,采用COMSOL软件建立仿真模型,研究了不同焊料凸点高度对键合可靠性的影响;采用电镀法制备Cu/Sn凸点阵列和Cu/SnAg凸点阵列,重点对界面处金属间化合物(Intermetallic compounds,IMC)进行研究.结果表明,Cu/SnAg凸点高度的增加有利于降低凸点键合界面应力,从而提高芯片键合可靠性.金属凸点尺寸越小,界面处金属间化合物生长越快,空洞数量越多.雾锡凸点的晶粒尺寸大于亮锡凸点,而且晶界数量较少,使得凸点界面上IMC的生长速度较慢.因此,雾锡凸点能够有效减少凸点界面空洞的形成,SnAg合金替代纯锡材料可以进一步减少凸点界面空洞的形成.通过优化工艺条件,成功制备出点间距为8 μm,像素阵列为1 920×1 080的超高密度Cu/SnAg金属凸点.
Keyword :
Cu/SnAg凸点 Cu/SnAg凸点 Cu/Sn凸点 Cu/Sn凸点 电镀 电镀 金属间化合物 金属间化合物
Cite:
Copy from the list or Export to your reference management。
GB/T 7714 | 罗灿琳 , 林畅 , 曾煌杰 et al. 电镀法制备超高密度Cu/Sn凸点和Cu/SnAg凸点及其微观形貌研究 [J]. | 光电子技术 , 2025 , 45 (1) : 10-17 . |
MLA | 罗灿琳 et al. "电镀法制备超高密度Cu/Sn凸点和Cu/SnAg凸点及其微观形貌研究" . | 光电子技术 45 . 1 (2025) : 10-17 . |
APA | 罗灿琳 , 林畅 , 曾煌杰 , 张永爱 , 孙捷 , 严群 et al. 电镀法制备超高密度Cu/Sn凸点和Cu/SnAg凸点及其微观形貌研究 . | 光电子技术 , 2025 , 45 (1) , 10-17 . |
Export to | NoteExpress RIS BibTex |
Version :
Abstract :
光场显示具有数据量小、结构简单、易于集成化等优点,使其在军事、医学、教育、娱乐等领域具有巨大的应用潜力.然而,全彩色、大视角、高分辨率、大景深的光场显示受限于高分辨率显示器、光调制器、智能算法、超高速计算机等技术的发展.近年来,人们致力于探索新的设计策略、新的器件结构和潜在的应用.综述了三维(3D)显示技术的发展与分类以凸显出光场显示的优势;阐述了光场显示的概念与意义;介绍了光场显示中的集成成像光场显示、投影光场显示和层光场显示的发展及主要技术挑战.强调了在新形势下对光场显示的新要求,并提出对中国发展光场显示的建议,即加强技术创新平台建设,推动光场显示与其他前沿技术的融合,重点攻克关键技术和产业链瓶颈,促进产学研合作,以确保在全球高科技领域的竞争力.
Keyword :
3D显示 3D显示 光场显示 光场显示 层光场显示 层光场显示 投影光场显示 投影光场显示 集成成像光场显示 集成成像光场显示
Cite:
Copy from the list or Export to your reference management。
GB/T 7714 | 彭玉颜 , 康家欣 , 周雄图 et al. 光场显示研发进展 [J]. | 科技导报 , 2025 , 43 (2) : 34-41 . |
MLA | 彭玉颜 et al. "光场显示研发进展" . | 科技导报 43 . 2 (2025) : 34-41 . |
APA | 彭玉颜 , 康家欣 , 周雄图 , 张永爱 , 郭太良 , 吴朝兴 . 光场显示研发进展 . | 科技导报 , 2025 , 43 (2) , 34-41 . |
Export to | NoteExpress RIS BibTex |
Version :
Abstract :
As the entrance to the metaverse, the near-eye display (NED) technology based on naked eye three-dimensional (3D) display can transform how people interact with digital information as a possible next-generation display. Depth of field (DoF) is an essential indicator for viewers to explore 3D display scenarios, but traditional devices for improving the DoF of integral imaging (II) naked eye 3D display cannot be well incorporated with a high- integrated NED. To improve II's DoF for NED, we propose triple-focal-length microlens array (TFL-MLA) with a honeycomb layout. The TFL-MLA is fabricated utilizing multilayer photolithography and thermal reflow. Microlenses with varying focal lengths are achieved on a single glass wafer using three photomasks with alignment marks. The results indicate that multi-layer microlenses can be precisely positioned with alignment marks. Furthermore, altering the thickness of the photoresist enables height control in the TFL-MLA. The prepared TFL-MLA has good morphology, with a diameter of approximately 208.3 f 2.6 mu m and three heights of 28.8 f 0.7 mu m, 23.1 f 0.6 mu m, and 13.7 f 0.3 mu m. The TFL-MLA provides excellent focusing and imaging in three focal planes (focal lengths of 368.8 mu m, 441.1 mu m, and 701.6 mu m). As a proof-of-concept, a DoF-enhanced NED system based on II utilizing the TFL-MLA is implemented, allowing a clear presentation of 3D objects in various center depth planes. The proposed NED's DoF has increased from 154 mm to 541.8 mm. This TFL-MLA is anticipated to promote the evolution of NED with diverse DoF, boosting the development of the metaverse.
Keyword :
Depth of field Depth of field Near-eye display Near-eye display Three-dimensional display Three-dimensional display Triple-focal-length microlens array Triple-focal-length microlens array
Cite:
Copy from the list or Export to your reference management。
GB/T 7714 | Peng, Yuyan , Wang, Wenwen , Zhang, Jiazhen et al. Integral imaging 3D display using triple-focal microlens arrays for near-eye display with enhanced depth of field [J]. | DISPLAYS , 2025 , 87 . |
MLA | Peng, Yuyan et al. "Integral imaging 3D display using triple-focal microlens arrays for near-eye display with enhanced depth of field" . | DISPLAYS 87 (2025) . |
APA | Peng, Yuyan , Wang, Wenwen , Zhang, Jiazhen , Zou, Zhenyou , Chen, Chunliang , Zhou, Xiongtu et al. Integral imaging 3D display using triple-focal microlens arrays for near-eye display with enhanced depth of field . | DISPLAYS , 2025 , 87 . |
Export to | NoteExpress RIS BibTex |
Version :
Abstract :
Micro-LEDs refer to light-emitting diodes with a size of less than 50 mu m, which have superior performances compared to Liquid Crystal Displays (LCDs) and Organic Light-Emitting Diodes (OLEDs). Micro-LEDs are expected to constitute the mainstream electronic display technology in the future. Nevertheless, micro-LED technology is still facing some technical difficulties. Especially, in mass transfer technology, the non-parallel problem between the temporary substrate holding the micro-LED chips and the target substrate seriously affects the bonding quality of the micro-LED chips. To solve this problem, this paper proposes a Polydimethylsiloxane (PDMS)-based flexible composite structure temporary substrate (carrier) doped with dimethyl silicone oil, which is capable of generating a deformation of 6 mu m under a pressure of 1 MPa and maintaining this property up to 250 degrees C. Utilizing this deformation property to cope with the non-parallel problem during the bonding process can significantly improve the bonding quality and yield of micro-LEDs. We placed 1600 (40 x 40) micro-LED chips of size 30 mu m x 15 mu m on the carrier with a chip pitch of 222 mu m. The carrier was heat-treated at 250 degrees C for 2 min as an adhesion reduction method. Under a bonding temperature of 180 degrees C and a bonding pressure of 0.3 MPa, bonding of the micro-LEDs with a 1.98-inch thin film transistor (TFT) was implemented using the carriers. A micro-LED green display with a PPI of 114 was successfully fabricated, with a display yield of 95.18 % and a brightness of 18,710 cd/m2. The method developed in this paper can overcome the key challenges of micro-LEDs mass transfer technology and pave the way for the industrialization of micro-LEDs.
Keyword :
Flip-chip bonding Flip-chip bonding Indium bumps Indium bumps Micro-LED Micro-LED PDMS PDMS TFT TFT
Cite:
Copy from the list or Export to your reference management。
GB/T 7714 | Huang, Xiaowei , Lang, Taifu , Tang, Xuehuang et al. Improved indium bumps bonding process using flexible composite structure temporary substrate for micro-LED display applications [J]. | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , 2024 , 186 . |
MLA | Huang, Xiaowei et al. "Improved indium bumps bonding process using flexible composite structure temporary substrate for micro-LED display applications" . | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING 186 (2024) . |
APA | Huang, Xiaowei , Lang, Taifu , Tang, Xuehuang , Xie, Yujie , Lin, Xin , Yang, Yifan et al. Improved indium bumps bonding process using flexible composite structure temporary substrate for micro-LED display applications . | MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING , 2024 , 186 . |
Export to | NoteExpress RIS BibTex |
Version :
Export
Results: |
Selected to |
Format: |