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学者姓名：杨尊先
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Abstract ：
在"中国制造 2025"以及科教兴国的战略背景下,加强电子工科人才素质培养已成为我国提升科技产品质量和行业竞争力的关键基础和核心,也是传统电子工科专业焕发新活力的重要途径.本文以固体物理、半导体器件物理等专业基础课为例,探索电子工科背景下在其专业基础课教学中引入素质教育元素,并借助多元化创新性教学方法,进一步丰富专业基础课的理论内容,进而将其融入专业基础课的教学与实践中,从而培养并提升学生创新能力和综合素质,满足"中国制造 2025"及科教兴国背景下社会对电子工科创新型人才的需求.
Keyword ：
专业基础课 专业基础课 创新性教学改革 创新性教学改革 电子工科 电子工科 素质教育 素质教育
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| GB/T 7714 | 杨尊先 , 郭太良 . 电子工科背景下专业基础课的素质教育教学改革研究 [J]. | 山西青年 , 2024 , (11) : 64-66 . |
| MLA | 杨尊先 等. "电子工科背景下专业基础课的素质教育教学改革研究" . | 山西青年 11 (2024) : 64-66 . |
| APA | 杨尊先 , 郭太良 . 电子工科背景下专业基础课的素质教育教学改革研究 . | 山西青年 , 2024 , (11) , 64-66 . |
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二硫化钼（MoS_2）作为一种出色的二维层状材料，是锂离子电池负极的理想候选材料。然而，由于MoS_2二维层状结构的堆叠性、充放电过程中的体积膨胀以及自身的低电导率等问题，限制了其在锂离子电池中的发展。文章将MoS_2与有机碳源葡萄糖复合，合成出了MoS_2@C的复合材料，实验表明，不同含量葡萄糖碳化后形成的碳纳米管对水热生长存在MoS_2明显的影响，通过调控葡萄糖的含量合成出在碳纳米管内层生长的MoS_2@C复合材料，其具有较高的比容量，以及更好的结构稳定性，在充放电过程中的比容量衰减更小。其作为锂离子电池负极材料时，在0.2 Ag~(-1)的电流密度下循环100次后保持680.7 mAhg-1的比容量；在1 Ag~(-1)的电流密度下，循环1000次后仍可保持580.9 mAhg~(-1)的可逆比容量。同时，分析了MoS_2@C在水热过程中的硫化反应进程，为合理制备MoS_2与碳的复合材料提供新的路径。径。
Keyword ：
MoS_2 MoS_2 碳纳米管 碳纳米管 纳米线 纳米线 锂离子电池 锂离子电池
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| GB/T 7714 | 程志明 , 杨尊先 , 郭太良 . 碳纳米管包覆的MoS_2锂电负极材料制备及其性能研究 [J]. | 真空科学与技术学报 , 2024 , 44 (04) : 354-360 . |
| MLA | 程志明 等. "碳纳米管包覆的MoS_2锂电负极材料制备及其性能研究" . | 真空科学与技术学报 44 . 04 (2024) : 354-360 . |
| APA | 程志明 , 杨尊先 , 郭太良 . 碳纳米管包覆的MoS_2锂电负极材料制备及其性能研究 . | 真空科学与技术学报 , 2024 , 44 (04) , 354-360 . |
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直接存储存取是一种在各个模块间进行大量数据传输的高速度、高效率的传输方式.在CPU对DMA进行初始化配置后,允许DMA作为主机占用总线,直接对外围设备和存储器的数据进行读写,实现外设和存储器、存储器和存储器之间的数据传输,不再需要CPU的干预,可以解放CPU,极大提高数据传输效率.本文旨在基于AHB总线协议的双通道DMA控制器实现外设与存储器之间的数据传输.
Keyword ：
AHB AHB FPGA FPGA SoC SoC Vivado2018 Vivado2018 直接存储存取 直接存储存取
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| GB/T 7714 | 蓝倩婷 , 杨尊先 , 王法翔 . 基于AHB总线的双通道DMA控制器的系统设计 [J]. | 集成电路与嵌入式系统 , 2024 , 24 (4) : 47-50 . |
| MLA | 蓝倩婷 等. "基于AHB总线的双通道DMA控制器的系统设计" . | 集成电路与嵌入式系统 24 . 4 (2024) : 47-50 . |
| APA | 蓝倩婷 , 杨尊先 , 王法翔 . 基于AHB总线的双通道DMA控制器的系统设计 . | 集成电路与嵌入式系统 , 2024 , 24 (4) , 47-50 . |
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二硫化钼（MoS_2）以高理论容量（662 mAhg~(-1)）和较大层间距（0.62 nm）一直是锂离子电池负极材料的研究热点。然而，由于MoS_2的固有电子/离子导电率差且充放电循环过程中电极材料的体积变化严重，导致MoS_2的比容量迅速衰减，阻碍了MoS_2材料作为电池电极。在这项工作中，设计并合成了一种新型的C/SnS/MoS_2纳米管。具体来说，将Sn以Sn-MOF的形态包覆在一维的MoO3纳米带上，然后硫化得到保留了表面纳米片结构的C/SnS/MoS_2纳米管。这种制备方法不仅保留了表面的纳米片结构，也在表面留下来一层薄薄的非晶碳。得益于优越的结构设计，且SnS与MoS_2存在着协同作用，这不仅提高了导电性，并且也提升了电池循环的稳定性。做为电极材料时，复合材料能够在0.1 Ag~(-1)电流密度下80次循环后还保持着1110.2 mAhg~(-1)的放电比容量，在2 Ag~(-1)大电流密度下860次循环后保持801.7 mAhg~(-1)的放电比容量。
Keyword ：
Sn-MOF Sn-MOF 一维纳米材料 一维纳米材料 分级结构 分级结构 锂离子电池 锂离子电池
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| GB/T 7714 | 叶淞玮 , 杨尊先 , 郭太良 . 基于Sn-MOF组装的C/SnS/MoS_2纳米管及其锂离子电池性能研究 [J]. | 真空科学与技术学报 , 2024 , 44 (04) : 341-349 . |
| MLA | 叶淞玮 等. "基于Sn-MOF组装的C/SnS/MoS_2纳米管及其锂离子电池性能研究" . | 真空科学与技术学报 44 . 04 (2024) : 341-349 . |
| APA | 叶淞玮 , 杨尊先 , 郭太良 . 基于Sn-MOF组装的C/SnS/MoS_2纳米管及其锂离子电池性能研究 . | 真空科学与技术学报 , 2024 , 44 (04) , 341-349 . |
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量子点（QDs）纳米晶体具备出众的窄半峰宽，且尺寸和发光波长易调节等优点，成为纳米材料领域的新星，而量子点电致发光二极管（QLED）的应用也随之得到研究人员的关注。文章的研究通过材料配比的设计，调节CdZnS-QDs的尺寸和发光波长，使其在CdSe-QDs基QLED中辅助器件的性能提升，最终能得到光致发光波长在425～455 nm的蓝紫色CdZnSQDs。使用宽带隙的CdZnS-QDs作为器件的无机插入层材料，能够对CdSe-QDs作为发光层的QLED的能带匹配、激子传递和界面修饰等进行优化。通过对比实验探索最佳的QDs合成策略，精确控制QDs的发光峰位，并将得到的结晶性强且尺寸均匀的量子点制备CdSe-QDs基电致发光器件，在发光层与无机电子传输层之间插入制备的CdZnS-QDs，得到的器件在电流密度为1000 mA/cm~2时，亮度从227188 cd/m~2提升到313775 cd/m~2，最大的电流效率达到38.1 Cd/A。该方法可以为QLED结构的设计提供新的思路。
Keyword ：
CdZnS量子点 CdZnS量子点 无机插入层 无机插入层 量子点发光二极管 量子点发光二极管
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| GB/T 7714 | 孟宗羿 , 杨尊先 , 郭太良 . 镉系量子点材料的制备及其发光二极管结构优化 [J]. | 真空科学与技术学报 , 2024 , 44 (05) : 401-408 . |
| MLA | 孟宗羿 等. "镉系量子点材料的制备及其发光二极管结构优化" . | 真空科学与技术学报 44 . 05 (2024) : 401-408 . |
| APA | 孟宗羿 , 杨尊先 , 郭太良 . 镉系量子点材料的制备及其发光二极管结构优化 . | 真空科学与技术学报 , 2024 , 44 (05) , 401-408 . |
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A carbon layer usually covers the outside of SnS/MoS2 nanosheets produced by a traditional C-layer cladding process, resulting in a material with a lower specific surface area and fewer active sites. Therefore, it is difficult for these as-obtained SnS and MoS2 materials to be directly employed as electrode materials. There is a great need to develop a new C-layer coating process that can effectively coat active materials and simultaneously increase the specific surface area. In this study, novel SnS@C/MoS2 nanotubes were designed and synthesized by a self-sacrificing template method (SSTM). Specifically, MoO3 nanoribbons were first coated with Sn to produce Sn-MOF, and SnS@C/MoS2 nanotubes with a particular nanosheet architecture preserved were achieved via an elegant SSTM vulcanization strategy. This SSTM preparation method not only retains the nanosheet microstructure of the surface but also leaves a thin layer of amorphous carbon on the surface, which greatly improves the conductivity and effectively improves the cycling stability. In addition to above-mentioned advantages, there is a synergistic effect between the various components of the SnS@C/MoS2 nanotubes, which has a positive effect on the electrochemical performance. When used as the anode of a lithium-ion battery (LIB), the SnS@C/MoS2 composite can maintain a specific discharge capacity of 970.9 mAh g(-1) after 500 cycles at a current density of 1 A g(-1), and a specific discharge capacity of 778.1 mAh g(-1) even after 1000 cycles at a current density of 2 A g(-1). This method provides a reference for the synthesis of other nanostructured materials.
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| GB/T 7714 | Ye, Songwei , Yang, Zunxian , Ye, Yuliang et al. Forming SnS@C/MoS2 nanotubes with high specific surface area via self-sacrificing template method as superior performance anode for lithium-ion batteries [J]. | CRYSTENGCOMM , 2024 , 26 (12) : 1779-1788 . |
| MLA | Ye, Songwei et al. "Forming SnS@C/MoS2 nanotubes with high specific surface area via self-sacrificing template method as superior performance anode for lithium-ion batteries" . | CRYSTENGCOMM 26 . 12 (2024) : 1779-1788 . |
| APA | Ye, Songwei , Yang, Zunxian , Ye, Yuliang , Cheng, Zhiming , Hong, Hongyi , Zeng, Zhiwei et al. Forming SnS@C/MoS2 nanotubes with high specific surface area via self-sacrificing template method as superior performance anode for lithium-ion batteries . | CRYSTENGCOMM , 2024 , 26 (12) , 1779-1788 . |
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Cadmium selenide (CdSe)-based colloidal quantum dots (QDs) exhibit unique properties such as tunable colors, narrow emission, high photoluminescence efficiency, and high stability, making them one of the most promising candidates for next-generation displays. CdSe-based QD light-emitting diodes (QLEDs) have attracted more and more attention mainly due to their advantages including high electroluminescence brightness, low turn-on voltage, and ultrathin device structures. However, there are still many challenges, mainly including the lattice defects aroused by lattice strain during the QD growth process and the surface defects caused by ligand desorption. CdSe-based QLEDs with high photoelectronic performance were finally achieved in our work just by optimizing the synthesis processes and further reducing defects in QD shells. There was a great decrease in the defect density of the QD shell indirectly according to their testing results in the fluorescence lifetime and single-carrier devices. After the reaction system was diluted with a solvent in the hot-injection method, there was some blue shift in the QD emission observed from 595 to 562 nm. Then, with the ZnSe shell further coated onto the QD, the size of the effective emission center was reduced to some extent, and further, a blue shift in the emission was obtained with the wavelength down to 533 nm. Finally, on the outside of the as-synthesized QDs, the ZnS shell was used to passivate and further protect the ZnSe layer, which greatly increased the average fluorescence lifetime of the CdSe-based QDs from 22.94 to 36.41 ns. Additionally, a layer of lithium fluoride (LiF) with optimized thickness was further deposited onto the QD emitting layer to prevent ligand desorption from ethanol solvent cleaning. Therefore, the CdSe-based QD fluorescence efficiency was greatly improved and the maximum external quantum efficiency (EQE) of 8.06% for our CdSe-based QLEDs was achieved with a LiF layer of 3 nm.
Keyword ：
CdZnSe quantum dots (QDs) CdZnSe quantum dots (QDs) defect state control defect state control LiF film LiF film nucleation control nucleation control QLED QLED
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| GB/T 7714 | Huang, Qiaocan , Yang, Zunxian , Ye, Yuliang et al. Physically Controlled Nucleation for Tunable Quantum Dots and Interface Defect Modification in Light-Emitting Diodes [J]. | ACS APPLIED NANO MATERIALS , 2024 , 7 (2) : 1896-1906 . |
| MLA | Huang, Qiaocan et al. "Physically Controlled Nucleation for Tunable Quantum Dots and Interface Defect Modification in Light-Emitting Diodes" . | ACS APPLIED NANO MATERIALS 7 . 2 (2024) : 1896-1906 . |
| APA | Huang, Qiaocan , Yang, Zunxian , Ye, Yuliang , Meng, Zongyi , Zeng, Zhiwei , Hong, Hongyi et al. Physically Controlled Nucleation for Tunable Quantum Dots and Interface Defect Modification in Light-Emitting Diodes . | ACS APPLIED NANO MATERIALS , 2024 , 7 (2) , 1896-1906 . |
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Perovskite nanocrystals have absorbed increasing interest, especially in the field of optoelectronics, owing to their unique characteristics, including their tunable luminescence range, robust solution processability, facile synthesis, and so on. However, in practice, due to the inherent instability of the traditional long-chain insulating ligands surrounding perovskite quantum dots (PeQDs), the performance of the as-fabricated QLED is relatively disappointing. Herein, the zwitterion 3-(decyldimethylammonio)propanesulfonate (DLPS) with the capability of double passivating perovskite quantum dots could effectively replace the original long-chain ligand simply through a multistep post-treatment strategy to finally inhibit the formation of defects. It was indicated from theexperimental results that the DLPS, as one type of ligand with the bimolecular ion, was very adavntageous in replacing long-chain ligands and further suppressing the formation of defects. Finally, the perovskite quantum dots with greatly enhanced PLQY as high as 98% were effectively achieved. Additionally, the colloidal stability of the corresponding PeQDs has been significantly enhanced, and a transparent colloidal solution was obtained after 45 days under ambient conditions. Finally, the as-fabricated QLEDs based on the ligand-exchanged PeQDs exhibited a maximum brightness of 9464 cd/m(2) and an EQE of 12.17%.
Keyword ：
defect passivation defect passivation ligand exchange ligand exchange light-emittingdiodes light-emittingdiodes perovskite quantumdots perovskite quantumdots sulfonic acid zwitterions sulfonic acid zwitterions
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| GB/T 7714 | Zeng, Zhiwei , Meng, Yuhan , Yang, Zunxian et al. Efficient CsPbBr3 Perovskite Light-Emitting Diodes via Novel Multi-Step Ligand Exchange Strategy Based on Zwitterionic Molecules [J]. | ACS APPLIED MATERIALS & INTERFACES , 2024 , 16 (8) : 10389-10397 . |
| MLA | Zeng, Zhiwei et al. "Efficient CsPbBr3 Perovskite Light-Emitting Diodes via Novel Multi-Step Ligand Exchange Strategy Based on Zwitterionic Molecules" . | ACS APPLIED MATERIALS & INTERFACES 16 . 8 (2024) : 10389-10397 . |
| APA | Zeng, Zhiwei , Meng, Yuhan , Yang, Zunxian , Ye, Yuliang , Lin, Qiuxiang , Meng, Zongyi et al. Efficient CsPbBr3 Perovskite Light-Emitting Diodes via Novel Multi-Step Ligand Exchange Strategy Based on Zwitterionic Molecules . | ACS APPLIED MATERIALS & INTERFACES , 2024 , 16 (8) , 10389-10397 . |
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Domain distribution, defect density as well as carrier transport all exert some great impact on the performance of quasi-two-dimensional (quasi -2D) perovskites light emitting diodes (PeLEDs). Herein, the novelty multifunctional metformin hydrochloride (MFCl) buried passivated layer was introduced to optimize the crystal dynamics, surface morphology, and electro-luminescent properties of the quasi -2D perovskites. On the one hand, MF ion to some extent optimized the domain distribution just by both decreasing the n = 2 phase and increasing the threedimensional (3D) phase, which facilitated the charge funnelling. On the other hand, by combining MFCl with PSS or PSS-Na, the energy level of the hole transport layer was effectively adjusted, resulting in an obvious reduction of the injection barrier. As a result, the MFCl-optimized blue quasi -2D PeLEDs with the maximum external quantum efficiency of 5.22 % was achieved, which is 3.6 times higher than that of the device without the MFCl treatment. This work provided favourable strategy for the performance enhancement of blue quasi -2D PeLEDs, in which a multifunction interface was introduced to synchronously improve the phase distribution as well as the defect passivation of quasi -2D perovskite, meanwhile all of those further promoted the charge transportation.
Keyword ：
Blue emitting device Blue emitting device Multifunctional Interface Multifunctional Interface Oriented Crystallization Oriented Crystallization Quasi-2D Perovskite Quasi-2D Perovskite
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| GB/T 7714 | Ye, Yuliang , Cui, Zhou , Yang, Zunxian et al. A multifunctional interface optimization strategy for efficient Quasi-2D blue perovskite Light-Emitting diodes [J]. | CHEMICAL ENGINEERING JOURNAL , 2024 , 483 . |
| MLA | Ye, Yuliang et al. "A multifunctional interface optimization strategy for efficient Quasi-2D blue perovskite Light-Emitting diodes" . | CHEMICAL ENGINEERING JOURNAL 483 (2024) . |
| APA | Ye, Yuliang , Cui, Zhou , Yang, Zunxian , Zeng, Zhiwei , Meng, Zongyi , Hong, Hongyi et al. A multifunctional interface optimization strategy for efficient Quasi-2D blue perovskite Light-Emitting diodes . | CHEMICAL ENGINEERING JOURNAL , 2024 , 483 . |
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Quantum dots (QDs) materials are rapidly developing in the field of electrochromic devices due to their excellent monochromatic properties and tunable luminescence. In this paper, we investigate the physical method of reducing the growth time of QDs by diluting the concentration of monomer with solvent during the growth of QDs nuclei, which can change the luminescence wavelength of QDs without changing the chemical composition ratio. Further modulation of the luminescence wavelength is achieved by growing the ZnSe and ZnSeS shell layers, resulting in green QDs with a photoluminescence wavelength of 540 nm. The principle of color change is explained by comparative experiments as well as by the LaMer model. The luminescence peak position of QDs can be controlled only by interfering with the growth phase of the nucleus. We also found that increasing the cladding temperature of the QDs shell had a positive effect on the reduction of defects in the QDs. The obtained QDs were subsequently used to prepare quantum dot electroluminescent devices, and a brightness of 348993 Cd/m2 and a current efficiency of 32 Cd/A were obtained at 8 V. In addition, the method can provide new ideas for the preparation of other types of nanomaterials prepared by the thermal injection method. © 2023 Science Press. All rights reserved.
Keyword ：
CdZnSe/ZnSe/ZnSeS quantum dots CdZnSe/ZnSe/ZnSeS quantum dots Quantum dot electroluminescent devices Quantum dot electroluminescent devices Thermal injection method Thermal injection method
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| GB/T 7714 | Huang, Q. , Yang, Z. , Guo, T. . Synthesis of CdZnSe/ZnSe/ZnSeS Quantum Dot Materials and Performance in Quantum Dot Electroluminescent Devices; [CdZnSe/ZnSe/ZnSeS 量子点材料的制备及其量子点电致发光器件性能研究] [J]. | Journal of Vacuum Science and Technology , 2023 , 43 (8) : 658-664 . |
| MLA | Huang, Q. et al. "Synthesis of CdZnSe/ZnSe/ZnSeS Quantum Dot Materials and Performance in Quantum Dot Electroluminescent Devices; [CdZnSe/ZnSe/ZnSeS 量子点材料的制备及其量子点电致发光器件性能研究]" . | Journal of Vacuum Science and Technology 43 . 8 (2023) : 658-664 . |
| APA | Huang, Q. , Yang, Z. , Guo, T. . Synthesis of CdZnSe/ZnSe/ZnSeS Quantum Dot Materials and Performance in Quantum Dot Electroluminescent Devices; [CdZnSe/ZnSe/ZnSeS 量子点材料的制备及其量子点电致发光器件性能研究] . | Journal of Vacuum Science and Technology , 2023 , 43 (8) , 658-664 . |
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