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< Page ,Total 18 >
Dual optimization strategies to achieve low roll-off and stable quantum dot light-emitting diodes SCIE
期刊论文 | 2025 , 160 | OPTICAL MATERIALS
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Abstract :

Quantum dot (QD) based light-emitting diode devices (QLEDs) attracted significant academic interest due to their outstanding color saturation and convenient solution-based manufacturing processes. Currently, the external quantum efficiency (EQE) of red, green, and blue QLEDs reached their own theoretical limits. However, there was still a common phenomenon of roll-off existed in QLEDs. In this work, QLEDs with an ultra low roll-off were realized via simple carrier injection regulation strategy in achieving carrier recombination balance and exhibited excellent repeatability. By modifying quantum dots and electron transport layer (ETL), the champion device with the peak EQE of 15.2 %, and a current efficiency (CE) of 63.4 cd/A was successfully fabricated, which were 1.9 and 2.0 times greater than those of the control devices, respectively. The devices delivered a peak brightness of 266,778 cd/m2, and the EQE remained at 15.0 % at a brightness of 50,000 cd/m2, staying above 14 % within the range of 3000 to 200,000 cd/m2. At a voltage of 10 V, the peak EQE of the optimized devices decreased by only 7.6 % when compared with their optimum value of EQEs, while the EQE of the control device declined by 26.6 %. Finally, analysis of 40 different batches of devices revealed an average EQE of 14.3 %, demonstrating that this strategy exhibited good repeatability. This approach provided a convenient means to regulate carrier injection and further elucidated the relationship between roll-off and carrier injection balance in QLEDs, proposing a strategy to enhance their performance and simultaneously mitigate roll-off.

Keyword :

Low roll-off Low roll-off QLEDs QLEDs Quantum dots (QDs) Quantum dots (QDs) Repeatability Repeatability

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GB/T 7714 Chen, Ye , Yang, Zunxian , Wang, Jiaxiang et al. Dual optimization strategies to achieve low roll-off and stable quantum dot light-emitting diodes [J]. | OPTICAL MATERIALS , 2025 , 160 .
MLA Chen, Ye et al. "Dual optimization strategies to achieve low roll-off and stable quantum dot light-emitting diodes" . | OPTICAL MATERIALS 160 (2025) .
APA Chen, Ye , Yang, Zunxian , Wang, Jiaxiang , Zhang, Hui , Chen, Yue , Jiang, Xudong et al. Dual optimization strategies to achieve low roll-off and stable quantum dot light-emitting diodes . | OPTICAL MATERIALS , 2025 , 160 .
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Uncovering the Performance Enhancing Mechanism of Methanesulfonate Ligands in Perovskite Quantum Dots for Light-Emitting Devices SCIE
期刊论文 | 2025 , 17 (4) , 6639-6647 | ACS APPLIED MATERIALS & INTERFACES
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Abstract :

Perovskite quantum dots (PQDs) have attracted more and more attention in light-emitting diode (LED) devices due to their outstanding photoelectric properties. Surface ligands not only enable size control of quantum dots but also enhance their optoelectronic performance. However, the efficiency of exciton recombination in PQDs is often hindered by the desorption dynamics of surface ligands, leading to suboptimal electrical performance. In this study, sodium methanesulfonate (NaMeS) was successfully introduced during PQD synthesis and ligand exchange, where the S=O groups effectively interacted with the perovskite components. The NaMeS-modified PQD films exhibited significantly improved surface morphology, radiative recombination efficiency, and carrier mobility. Consequently, Pe-LEDs derived from NaMeS-capped PQDs achieved a remarkable enhancement in performance with a maximum external quantum efficiency of 9.41%. This work thus provides a novel and effective strategy for the development of high-performance PQDs and their applications in LEDs.

Keyword :

ligand exchange ligand exchange perovskite quantumdots perovskite quantumdots radiativerecombination radiativerecombination sodium methanesulfonate sodium methanesulfonate surface passivation surface passivation

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GB/T 7714 Ye, Yuliang , Wang, Jiaxiang , Yang, Zunxian et al. Uncovering the Performance Enhancing Mechanism of Methanesulfonate Ligands in Perovskite Quantum Dots for Light-Emitting Devices [J]. | ACS APPLIED MATERIALS & INTERFACES , 2025 , 17 (4) : 6639-6647 .
MLA Ye, Yuliang et al. "Uncovering the Performance Enhancing Mechanism of Methanesulfonate Ligands in Perovskite Quantum Dots for Light-Emitting Devices" . | ACS APPLIED MATERIALS & INTERFACES 17 . 4 (2025) : 6639-6647 .
APA Ye, Yuliang , Wang, Jiaxiang , Yang, Zunxian , Chen, Ye , Zhang, Hui , Bai, Yuting et al. Uncovering the Performance Enhancing Mechanism of Methanesulfonate Ligands in Perovskite Quantum Dots for Light-Emitting Devices . | ACS APPLIED MATERIALS & INTERFACES , 2025 , 17 (4) , 6639-6647 .
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Uncovering the Performance Enhancing Mechanism of Methanesulfonate Ligands in Perovskite Quantum Dots for Light-Emitting Devices Scopus
期刊论文 | 2025 , 17 (4) , 6639-6647 | ACS Applied Materials and Interfaces
载流子注入速率调控实现高效稳定的量子点发光二极管
期刊论文 | 2025 , 45 (4) , 317-325 | 真空科学与技术学报
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Abstract :

基于量子点(QDs)的发光二极管器件(QLEDs)因其出色的色彩饱和度和方便的溶液制造工艺而引起了学术界的极大兴趣.目前,镉基红绿蓝光QLEDs的外量子效率(EQE)都已经达到理论极限,但是还存在严重的载流子注入不平衡的现象,这会导致器件的稳定性和寿命大幅度降低.文章通过一种简单的方法对电子传输层(ETL)进行掺杂处理,从而降低电子迁移率,使器件实现更为平衡的载流子注入.在ZnMgO的乙醇溶液中加入适量的乙醇胺(EA)溶液,胺根离子(NH2-)可以填补ZnMgO中的氧空位,从而调控ZnMgO的电子迁移率.对比于控制器件,优化器件的EQE提升到 14.6%,电流效率(CE)提升到60.7 cd/A,分别提升了1.87倍和1.94倍,同时峰值亮度达到252402 cd/m2.

Keyword :

乙醇胺 乙醇胺 电子传输层 电子传输层 载流子注入 载流子注入 量子点发光二极管 量子点发光二极管

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GB/T 7714 陈烨 , 杨尊先 , 郭太良 . 载流子注入速率调控实现高效稳定的量子点发光二极管 [J]. | 真空科学与技术学报 , 2025 , 45 (4) : 317-325 .
MLA 陈烨 et al. "载流子注入速率调控实现高效稳定的量子点发光二极管" . | 真空科学与技术学报 45 . 4 (2025) : 317-325 .
APA 陈烨 , 杨尊先 , 郭太良 . 载流子注入速率调控实现高效稳定的量子点发光二极管 . | 真空科学与技术学报 , 2025 , 45 (4) , 317-325 .
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载流子注入速率调控实现高效稳定的量子点发光二极管
期刊论文 | 2025 , 45 (04) , 317-325 | 真空科学与技术学报
Sulfonic Acid Ligands Promote Surface Reconstruction of Perovskite Quantum Dots for High-Performance Light-Emitting Diodes SCIE
期刊论文 | 2025 , 13 (8) | ADVANCED OPTICAL MATERIALS
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Abstract :

Perovskite quantum dots (PQDs) have emerged as promising candidates for next-generation high-quality lighting and high-definition displays due to their outstanding luminescence properties, characterized by a narrow emission spectrum and tunable color. However, during the purification process involving polar solvents, ligand detachment from the quantum dot surface often induces crystal defects, thereby compromising their long-term stability. Herein, the effects of various post-processing strategies on PQD performance are systematically explored, including the use of oleic acid (OA), didodecyldimethylammonium bromide (DDAB), and their combinations, alongside OA-assisted synthesis. Furthermore, a synergistic post-processing strategy based on DDAB-NaMeS (sodium methanesulfonate) is proposed to elucidate the mechanism of ligand reconstruction on the quantum dot surface during purification. The resulting PQDs demonstrated excellent stability over a storage period exceeding one month, and the corresponding Quantum Dots Light-Emitting Diodes (QLEDs) achieved a peak external quantum efficiency (EQE) of 9.82%, representing a 1.91-fold improvement over standard devices. These QLEDs exhibited exceptional optoelectronic performance, underscoring their potential for application in other sulfonic acid ligands and perovskite-based materials.

Keyword :

ligand exchange ligand exchange light-emitting diodes light-emitting diodes perovskite quantum dots perovskite quantum dots post-treatment post-treatment surface reconstruction surface reconstruction

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GB/T 7714 Wang, Jiaxiang , Yang, Zunxian , Chen, Ye et al. Sulfonic Acid Ligands Promote Surface Reconstruction of Perovskite Quantum Dots for High-Performance Light-Emitting Diodes [J]. | ADVANCED OPTICAL MATERIALS , 2025 , 13 (8) .
MLA Wang, Jiaxiang et al. "Sulfonic Acid Ligands Promote Surface Reconstruction of Perovskite Quantum Dots for High-Performance Light-Emitting Diodes" . | ADVANCED OPTICAL MATERIALS 13 . 8 (2025) .
APA Wang, Jiaxiang , Yang, Zunxian , Chen, Ye , Zhang, Hui , Chen, Yue , Bai, Yuting et al. Sulfonic Acid Ligands Promote Surface Reconstruction of Perovskite Quantum Dots for High-Performance Light-Emitting Diodes . | ADVANCED OPTICAL MATERIALS , 2025 , 13 (8) .
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Sulfonic Acid Ligands Promote Surface Reconstruction of Perovskite Quantum Dots for High-Performance Light-Emitting Diodes Scopus
期刊论文 | 2025 , 13 (8) | Advanced Optical Materials
Sulfonic Acid Ligands Promote Surface Reconstruction of Perovskite Quantum Dots for High-Performance Light-Emitting Diodes Scopus
期刊论文 | 2025 , 13 (8) | Advanced Optical Materials
Highly enhanced Quantum dot light-emitting diode performance by controlling energy resonance in inorganic insertion layers SCIE
期刊论文 | 2024 , 152 | OPTICAL MATERIALS
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Abstract :

Quantum-dot light-emitting diodes (QLED) have become a research trend in the field of new displays due to their low cost, wide color gamut, narrow bandwidth, and characteristics that enable production through the solutiongel method. However, the electrical performance of QLED is consistently constrained by energy losses and imbalanced charge carrier injection. This motivates our focus on exciton recombination and energy losses within the quantum-dot layer to enhance the electrical efficiency of QLED. In this work, we introduce a method using a CdZnS quantum dot (B-QD) interlayer to modulate energy transfer and charge carrier transport in QLED devices employing CdSe quantum dot (G-QD) as the emissive layer. By strategically incorporating a B-QD layer between the G-QD and HTL/ETL, we facilitate energy transfer due to the overlap between the excitation wavelength of BQD and the absorption wavelength of G-QDs. This leads to enhanced energy injection in QLED devices, resulting in a high current efficiency of 39.54 Cd/A and a peak brightness of 522,272 cd/m 2 for efficient QLED. The corresponding external quantum efficiency (EQE) is greatly improved from 5.62 % to 9.4 %. Our work provides a straightforward and effective approach to modulate exciton recombination and energy injection and further can be applicable to other photo-electronics devices.

Keyword :

dot interlayer dot interlayer Energy transfer Energy transfer Modulating exciton recombination quantum Modulating exciton recombination quantum QLED QLED

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GB/T 7714 Meng, Zongyi , Yang, Zunxian , Ye, Yuliang et al. Highly enhanced Quantum dot light-emitting diode performance by controlling energy resonance in inorganic insertion layers [J]. | OPTICAL MATERIALS , 2024 , 152 .
MLA Meng, Zongyi et al. "Highly enhanced Quantum dot light-emitting diode performance by controlling energy resonance in inorganic insertion layers" . | OPTICAL MATERIALS 152 (2024) .
APA Meng, Zongyi , Yang, Zunxian , Ye, Yuliang , Zeng, Zhiwei , Hong, Hongyi , Ye, Songwei et al. Highly enhanced Quantum dot light-emitting diode performance by controlling energy resonance in inorganic insertion layers . | OPTICAL MATERIALS , 2024 , 152 .
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Structural optimization of novel one-dimensional composites based on in situ - grown 1D CNTs with an amorphous structure and 2D MoS2 nanosheets for improved Li storage SCIE
期刊论文 | 2024 , 26 (25) , 3370-3382 | CRYSTENGCOMM
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Molybdenum disulfide is considered an excellent anode material for lithium-ion batteries due to its unique structure and high specific capacity. However, molybdenum disulfide's inherent low ionic transport rate and low intrinsic conductivity have limited its application in lithium-ion batteries. Compounding with carbon materials is an effective way to overcome these limitations in the application of molybdenum disulfide. In this work, the effect of carbon layer on the growth of molybdenum disulfide was systematically investigated in order to disclose the role and influence of carbon in composites with molybdenum disulfide. Furthermore, our work provides an effective method for the structural optimization of one-dimensional composites based on carbon and molybdenum disulfide just by controlling the ratio of carbon precursor to molybdenum source during its formation. After structural optimization, effective MoS2@C composite materials were successfully synthesized, which exhibited greatly enhanced electrical conductivity and structural stability and maintained a specific capacity of 800.4 mA h g(-1) even after 1200 cycles at a current density of 1 A g(-1) possibly due to the excellent specific capacity of molybdenum disulfide.

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GB/T 7714 Cheng, Zhiming , Yang, Zunxian , Ye, Yuliang et al. Structural optimization of novel one-dimensional composites based on in situ - grown 1D CNTs with an amorphous structure and 2D MoS2 nanosheets for improved Li storage [J]. | CRYSTENGCOMM , 2024 , 26 (25) : 3370-3382 .
MLA Cheng, Zhiming et al. "Structural optimization of novel one-dimensional composites based on in situ - grown 1D CNTs with an amorphous structure and 2D MoS2 nanosheets for improved Li storage" . | CRYSTENGCOMM 26 . 25 (2024) : 3370-3382 .
APA Cheng, Zhiming , Yang, Zunxian , Ye, Yuliang , Ye, Songwei , Hong, Hongyi , Zeng, Zhiwei et al. Structural optimization of novel one-dimensional composites based on in situ - grown 1D CNTs with an amorphous structure and 2D MoS2 nanosheets for improved Li storage . | CRYSTENGCOMM , 2024 , 26 (25) , 3370-3382 .
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Structural optimization of novel one-dimensional composites based on in situ - grown 1D CNTs with an amorphous structure and 2D MoS2 nanosheets for improved Li storage EI
期刊论文 | 2024 , 26 (25) , 3370-3382 | CrystEngComm
Structural optimization of novel one-dimensional composites based on in situ - grown 1D CNTs with an amorphous structure and 2D MoS2 nanosheets for improved Li storage Scopus
期刊论文 | 2024 , 26 (25) , 3370-3382 | CrystEngComm
基于AHB总线的双通道DMA控制器的系统设计
期刊论文 | 2024 , 24 (4) , 47-50 | 集成电路与嵌入式系统
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Abstract :

直接存储存取是一种在各个模块间进行大量数据传输的高速度、高效率的传输方式.在CPU对DMA进行初始化配置后,允许DMA作为主机占用总线,直接对外围设备和存储器的数据进行读写,实现外设和存储器、存储器和存储器之间的数据传输,不再需要CPU的干预,可以解放CPU,极大提高数据传输效率.本文旨在基于AHB总线协议的双通道DMA控制器实现外设与存储器之间的数据传输.

Keyword :

AHB AHB FPGA FPGA SoC SoC Vivado2018 Vivado2018 直接存储存取 直接存储存取

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GB/T 7714 蓝倩婷 , 杨尊先 , 王法翔 . 基于AHB总线的双通道DMA控制器的系统设计 [J]. | 集成电路与嵌入式系统 , 2024 , 24 (4) : 47-50 .
MLA 蓝倩婷 et al. "基于AHB总线的双通道DMA控制器的系统设计" . | 集成电路与嵌入式系统 24 . 4 (2024) : 47-50 .
APA 蓝倩婷 , 杨尊先 , 王法翔 . 基于AHB总线的双通道DMA控制器的系统设计 . | 集成电路与嵌入式系统 , 2024 , 24 (4) , 47-50 .
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基于AHB总线的双通道DMA控制器的系统设计
期刊论文 | 2024 , 24 (04) , 47-50 | 集成电路与嵌入式系统
电子工科背景下专业基础课的素质教育教学改革研究
期刊论文 | 2024 , (11) , 64-66 | 山西青年
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Abstract :

在"中国制造 2025"以及科教兴国的战略背景下,加强电子工科人才素质培养已成为我国提升科技产品质量和行业竞争力的关键基础和核心,也是传统电子工科专业焕发新活力的重要途径.本文以固体物理、半导体器件物理等专业基础课为例,探索电子工科背景下在其专业基础课教学中引入素质教育元素,并借助多元化创新性教学方法,进一步丰富专业基础课的理论内容,进而将其融入专业基础课的教学与实践中,从而培养并提升学生创新能力和综合素质,满足"中国制造 2025"及科教兴国背景下社会对电子工科创新型人才的需求.

Keyword :

专业基础课 专业基础课 创新性教学改革 创新性教学改革 电子工科 电子工科 素质教育 素质教育

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GB/T 7714 杨尊先 , 郭太良 . 电子工科背景下专业基础课的素质教育教学改革研究 [J]. | 山西青年 , 2024 , (11) : 64-66 .
MLA 杨尊先 et al. "电子工科背景下专业基础课的素质教育教学改革研究" . | 山西青年 11 (2024) : 64-66 .
APA 杨尊先 , 郭太良 . 电子工科背景下专业基础课的素质教育教学改革研究 . | 山西青年 , 2024 , (11) , 64-66 .
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A multifunctional interface optimization strategy for efficient Quasi-2D blue perovskite Light-Emitting diodes SCIE
期刊论文 | 2024 , 483 | CHEMICAL ENGINEERING JOURNAL
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Domain distribution, defect density as well as carrier transport all exert some great impact on the performance of quasi-two-dimensional (quasi -2D) perovskites light emitting diodes (PeLEDs). Herein, the novelty multifunctional metformin hydrochloride (MFCl) buried passivated layer was introduced to optimize the crystal dynamics, surface morphology, and electro-luminescent properties of the quasi -2D perovskites. On the one hand, MF ion to some extent optimized the domain distribution just by both decreasing the n = 2 phase and increasing the threedimensional (3D) phase, which facilitated the charge funnelling. On the other hand, by combining MFCl with PSS or PSS-Na, the energy level of the hole transport layer was effectively adjusted, resulting in an obvious reduction of the injection barrier. As a result, the MFCl-optimized blue quasi -2D PeLEDs with the maximum external quantum efficiency of 5.22 % was achieved, which is 3.6 times higher than that of the device without the MFCl treatment. This work provided favourable strategy for the performance enhancement of blue quasi -2D PeLEDs, in which a multifunction interface was introduced to synchronously improve the phase distribution as well as the defect passivation of quasi -2D perovskite, meanwhile all of those further promoted the charge transportation.

Keyword :

Blue emitting device Blue emitting device Multifunctional Interface Multifunctional Interface Oriented Crystallization Oriented Crystallization Quasi-2D Perovskite Quasi-2D Perovskite

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GB/T 7714 Ye, Yuliang , Cui, Zhou , Yang, Zunxian et al. A multifunctional interface optimization strategy for efficient Quasi-2D blue perovskite Light-Emitting diodes [J]. | CHEMICAL ENGINEERING JOURNAL , 2024 , 483 .
MLA Ye, Yuliang et al. "A multifunctional interface optimization strategy for efficient Quasi-2D blue perovskite Light-Emitting diodes" . | CHEMICAL ENGINEERING JOURNAL 483 (2024) .
APA Ye, Yuliang , Cui, Zhou , Yang, Zunxian , Zeng, Zhiwei , Meng, Zongyi , Hong, Hongyi et al. A multifunctional interface optimization strategy for efficient Quasi-2D blue perovskite Light-Emitting diodes . | CHEMICAL ENGINEERING JOURNAL , 2024 , 483 .
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镉系量子点材料的制备及其发光二极管结构优化 CSCD PKU
期刊论文 | 2024 , 44 (5) , 401-408 | 真空科学与技术学报
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Abstract :

量子点(QDs)纳米晶体具备出众的窄半峰宽,且尺寸和发光波长易调节等优点,成为纳米材料领域的新星,而量子点电致发光二极管(QLED)的应用也随之得到研究人员的关注.文章的研究通过材料配比的设计,调节CdZnS-QDs的尺寸和发光波长,使其在CdSe-QDs基QLED中辅助器件的性能提升,最终能得到光致发光波长在425~455 nm的蓝紫色CdZnS-QDs.使用宽带隙的CdZnS-QDs作为器件的无机插入层材料,能够对CdSe-QDs作为发光层的QLED的能带匹配、激子传递和界面修饰等进行优化.通过对比实验探索最佳的QDs合成策略,精确控制QDs的发光峰位,并将得到的结晶性强且尺寸均匀的量子点制备CdSe-QDs基电致发光器件,在发光层与无机电子传输层之间插入制备的CdZnS-QDs,得到的器件在电流密度为1000 mA/cm2时,亮度从227188 cd/m2提升到313775 cd/m2,最大的电流效率达到38.1 Cd/A.该方法可以为QLED结构的设计提供新的思路.

Keyword :

CdZnS量子点 CdZnS量子点 无机插入层 无机插入层 量子点发光二极管 量子点发光二极管

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GB/T 7714 孟宗羿 , 杨尊先 , 郭太良 . 镉系量子点材料的制备及其发光二极管结构优化 [J]. | 真空科学与技术学报 , 2024 , 44 (5) : 401-408 .
MLA 孟宗羿 et al. "镉系量子点材料的制备及其发光二极管结构优化" . | 真空科学与技术学报 44 . 5 (2024) : 401-408 .
APA 孟宗羿 , 杨尊先 , 郭太良 . 镉系量子点材料的制备及其发光二极管结构优化 . | 真空科学与技术学报 , 2024 , 44 (5) , 401-408 .
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镉系量子点材料的制备及其发光二极管结构优化 CSCD PKU
期刊论文 | 2024 , 44 (05) , 401-408 | 真空科学与技术学报
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