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学者姓名：吴朝兴
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以超高密度Cu/Sn微凸点和Cu/SnAg微凸点为研究对象,采用COMSOL软件建立仿真模型,研究了不同焊料凸点高度对键合可靠性的影响;采用电镀法制备Cu/Sn凸点阵列和Cu/SnAg凸点阵列,重点对界面处金属间化合物(Intermetallic compounds,IMC)进行研究.结果表明,Cu/SnAg凸点高度的增加有利于降低凸点键合界面应力,从而提高芯片键合可靠性.金属凸点尺寸越小,界面处金属间化合物生长越快,空洞数量越多.雾锡凸点的晶粒尺寸大于亮锡凸点,而且晶界数量较少,使得凸点界面上IMC的生长速度较慢.因此,雾锡凸点能够有效减少凸点界面空洞的形成,SnAg合金替代纯锡材料可以进一步减少凸点界面空洞的形成.通过优化工艺条件,成功制备出点间距为8 μm,像素阵列为1 920×1 080的超高密度Cu/SnAg金属凸点.
Keyword ：
Cu/SnAg凸点 Cu/SnAg凸点 Cu/Sn凸点 Cu/Sn凸点 电镀 电镀 金属间化合物 金属间化合物
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| GB/T 7714 | 罗灿琳 , 林畅 , 曾煌杰 et al. 电镀法制备超高密度Cu/Sn凸点和Cu/SnAg凸点及其微观形貌研究 [J]. | 光电子技术 , 2025 , 45 (1) : 10-17 . |
| MLA | 罗灿琳 et al. "电镀法制备超高密度Cu/Sn凸点和Cu/SnAg凸点及其微观形貌研究" . | 光电子技术 45 . 1 (2025) : 10-17 . |
| APA | 罗灿琳 , 林畅 , 曾煌杰 , 张永爱 , 孙捷 , 严群 et al. 电镀法制备超高密度Cu/Sn凸点和Cu/SnAg凸点及其微观形貌研究 . | 光电子技术 , 2025 , 45 (1) , 10-17 . |
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光场显示具有数据量小、结构简单、易于集成化等优点,使其在军事、医学、教育、娱乐等领域具有巨大的应用潜力.然而,全彩色、大视角、高分辨率、大景深的光场显示受限于高分辨率显示器、光调制器、智能算法、超高速计算机等技术的发展.近年来,人们致力于探索新的设计策略、新的器件结构和潜在的应用.综述了三维(3D)显示技术的发展与分类以凸显出光场显示的优势;阐述了光场显示的概念与意义;介绍了光场显示中的集成成像光场显示、投影光场显示和层光场显示的发展及主要技术挑战.强调了在新形势下对光场显示的新要求,并提出对中国发展光场显示的建议,即加强技术创新平台建设,推动光场显示与其他前沿技术的融合,重点攻克关键技术和产业链瓶颈,促进产学研合作,以确保在全球高科技领域的竞争力.
Keyword ：
3D显示 3D显示 光场显示 光场显示 层光场显示 层光场显示 投影光场显示 投影光场显示 集成成像光场显示 集成成像光场显示
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| GB/T 7714 | 彭玉颜 , 康家欣 , 周雄图 et al. 光场显示研发进展 [J]. | 科技导报 , 2025 , 43 (2) : 34-41 . |
| MLA | 彭玉颜 et al. "光场显示研发进展" . | 科技导报 43 . 2 (2025) : 34-41 . |
| APA | 彭玉颜 , 康家欣 , 周雄图 , 张永爱 , 郭太良 , 吴朝兴 . 光场显示研发进展 . | 科技导报 , 2025 , 43 (2) , 34-41 . |
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The wavelength tunable and environmentally friendly InP quantum dots are considered one of the most powerful alternatives to cadmium-based quantum dots, and the luminescent devices prepared with them also show great potential. There is still room for improvement in the synthesis methods and device applications of InP based quantum dots. In this work, we report one pot synthesis route for InP/ZnSe/ZnSeS/ZnS green QDs based on tris (dimethylamino)phosphine (DMP) phosphorus by using the strategy of multi shell coating and gradient heating to reduce surface defects of quantum dots. The shell structure, dosage, and growth temperature have all been taken into account in order to explore better performance of InP QDs. The synthesized green quantum dots have 86 % PLQY and a full width at half maximum of 36 nm. In addition, the synthesized green InP quantum dots are applied in AC QLED devices. The experimental results show that the luminescence intensity is affected by the driving voltage and frequency, which is similar to the working mode of non-carrier-injected emitting devices. And there is a matching value between the voltage and frequency.
Keyword ：
Alternating current Alternating current Aminophosphine Aminophosphine Indium phosphide Indium phosphide Quantum dots Quantum dots Single-terminal carrier-injection Single-terminal carrier-injection
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| GB/T 7714 | Lin, Jianpu , Zhang, Shengjie , Du, Lingfeng et al. Improved InP/ZnSe/ZnSeS/ZnS quantum dots for single-terminal carrier-injection light-emitting devices [J]. | OPTICAL MATERIALS , 2025 , 159 . |
| MLA | Lin, Jianpu et al. "Improved InP/ZnSe/ZnSeS/ZnS quantum dots for single-terminal carrier-injection light-emitting devices" . | OPTICAL MATERIALS 159 (2025) . |
| APA | Lin, Jianpu , Zhang, Shengjie , Du, Lingfeng , Zhang, Baiquan , Zhou, Xiongtu , Zhang, Yongai et al. Improved InP/ZnSe/ZnSeS/ZnS quantum dots for single-terminal carrier-injection light-emitting devices . | OPTICAL MATERIALS , 2025 , 159 . |
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The fabrication of uniform metal bump arrays with submicron-sized diameters is crucial for achieving Micro-LED displays with ultra-high pixel density. This study presents a fabrication strategy that utilizes an undercut sacrificial layer in the lift-off process to achieve fine-pitched metal bump arrays. The influences of sacrificial layer thickness and developing time on the undercut degree, as well as their effects on the morphology and dimensional consistency of bumps, are investigated. It is observed that increasing the developing time leads to a higher degree of undercut, not only facilitating the lift-off of the sacrificial layer but also resulting in an increased base radius of the metal bumps. By optimizing process parameters, we successfully achieved Au bump arrays with a base radius around 0.99 mu m, top radius around 0.3 mu m, and a pitch size of 1.4 mu m, exhibiting height nonuniformity below 5%. This fabrication strategy for uniform metal bump arrays with ultra-high density will greatly contribute to advancing Micro-LED technology towards high definition and high brightness.
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| GB/T 7714 | Lai, Zelei , Zou, Zhenyou , Ye, Jinyu et al. Fabrication of uniform submicron metal bump arrays based on undercut sacrificial layer for lift-off process [J]. | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , 2025 , 36 (12) . |
| MLA | Lai, Zelei et al. "Fabrication of uniform submicron metal bump arrays based on undercut sacrificial layer for lift-off process" . | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS 36 . 12 (2025) . |
| APA | Lai, Zelei , Zou, Zhenyou , Ye, Jinyu , Lin, Yibin , Zhou, Xiongtu , Sun, Jie et al. Fabrication of uniform submicron metal bump arrays based on undercut sacrificial layer for lift-off process . | JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS , 2025 , 36 (12) . |
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Developing micro- and nano-scaled full-color pixelation is crucial for advancing future display technologies. Transmission metasurface structural color (TMSC) shows promise for integrated displays due to its high resolution and stability. However, improving the color gamut and tunability of TMSC remains a challenge. In this study, we modified the conventional single-metal metagrating (Ag-Al2O3) by replacing the Ag grating layer with an Al-Al2O3-Ag hybrid grating layer. This novel TMSC based on the mixed metagrating achieves unique transmission spectra under TM polarization light, featuring a single peak with minimal sidebands, and near-zero transmission under TE polarization light. This design enables ultra-high color purity and switchable colors through polarization adjustment. The metagrating effectively blocks transmission sidebands by leveraging interactions between the top Al grating layer and the Al2O3 sandwich grating layer. Under TM polarization light, the TMSC using this mixed metagrating covers an expansive color gamut-173% sRGB space and 124% Adobe RGB space-nearly achieving full hue and high purity. Conversely, under TE polarization light, the TMSC based on the mixed metagrating achieves near-zero transmission, ideal for a perfect dark mode. Moreover, the proposed TMSC design allows for full hue adjustment of individual pixels by varying the incident angle under TM polarization light. Under TE polarization light, the dark mode remains stable regardless of incident angle variations. The metagrating holds significant potential for applications in displays, high-density information storage, optical encryption, and beyond.
Keyword ：
Dynamic display Dynamic display Full colorization Full colorization Large color gamut Large color gamut Metagrating Metagrating Transmission metasurface structural color Transmission metasurface structural color
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| GB/T 7714 | Zhang, Jiawei , Peng, Yuyan , Zou, Zhenyou et al. Ultraly high saturation and high contrast tunable transmission metagrating structural color for dynamic display [J]. | OPTICS COMMUNICATIONS , 2025 , 577 . |
| MLA | Zhang, Jiawei et al. "Ultraly high saturation and high contrast tunable transmission metagrating structural color for dynamic display" . | OPTICS COMMUNICATIONS 577 (2025) . |
| APA | Zhang, Jiawei , Peng, Yuyan , Zou, Zhenyou , Weng, Shuchen , Yang, Weiquan , Zhou, Xiongtu et al. Ultraly high saturation and high contrast tunable transmission metagrating structural color for dynamic display . | OPTICS COMMUNICATIONS , 2025 , 577 . |
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As the entrance to the metaverse, the near-eye display (NED) technology based on naked eye three-dimensional (3D) display can transform how people interact with digital information as a possible next-generation display. Depth of field (DoF) is an essential indicator for viewers to explore 3D display scenarios, but traditional devices for improving the DoF of integral imaging (II) naked eye 3D display cannot be well incorporated with a high- integrated NED. To improve II's DoF for NED, we propose triple-focal-length microlens array (TFL-MLA) with a honeycomb layout. The TFL-MLA is fabricated utilizing multilayer photolithography and thermal reflow. Microlenses with varying focal lengths are achieved on a single glass wafer using three photomasks with alignment marks. The results indicate that multi-layer microlenses can be precisely positioned with alignment marks. Furthermore, altering the thickness of the photoresist enables height control in the TFL-MLA. The prepared TFL-MLA has good morphology, with a diameter of approximately 208.3 f 2.6 mu m and three heights of 28.8 f 0.7 mu m, 23.1 f 0.6 mu m, and 13.7 f 0.3 mu m. The TFL-MLA provides excellent focusing and imaging in three focal planes (focal lengths of 368.8 mu m, 441.1 mu m, and 701.6 mu m). As a proof-of-concept, a DoF-enhanced NED system based on II utilizing the TFL-MLA is implemented, allowing a clear presentation of 3D objects in various center depth planes. The proposed NED's DoF has increased from 154 mm to 541.8 mm. This TFL-MLA is anticipated to promote the evolution of NED with diverse DoF, boosting the development of the metaverse.
Keyword ：
Depth of field Depth of field Near-eye display Near-eye display Three-dimensional display Three-dimensional display Triple-focal-length microlens array Triple-focal-length microlens array
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| GB/T 7714 | Peng, Yuyan , Wang, Wenwen , Zhang, Jiazhen et al. Integral imaging 3D display using triple-focal microlens arrays for near-eye display with enhanced depth of field [J]. | DISPLAYS , 2025 , 87 . |
| MLA | Peng, Yuyan et al. "Integral imaging 3D display using triple-focal microlens arrays for near-eye display with enhanced depth of field" . | DISPLAYS 87 (2025) . |
| APA | Peng, Yuyan , Wang, Wenwen , Zhang, Jiazhen , Zou, Zhenyou , Chen, Chunliang , Zhou, Xiongtu et al. Integral imaging 3D display using triple-focal microlens arrays for near-eye display with enhanced depth of field . | DISPLAYS , 2025 , 87 . |
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Microlight-emitting diodes (Micro-LEDs) offer numerous unique advantages in terms of materials, devices, technologies, and process applications. To enable control of LEDs with low current input, a heterojunction integrated light-emitting transistor (H-LET) device is proposed. By vertically integrating a heterojunction bipolar transistor (HBT) with a Micro-LED, a multifunctional optoelectronic device capable of light emission, modulation, and driving functions is achieved. The structure incorporates wide-bandgap aluminum gallium nitride (AlGaN) material into the emission region, forming a heterojunction with GaN. This significantly enhances electron injection efficiency and current gain. Under low current drive, the H-LET device achieves a current gain of up to 650. This results in superior current regulation and high-frequency response compared to homojunction light-emitting transistors. The H-LET shows significant potential for applications in smart lighting, high-definition displays, radio frequency systems, and high-speed communication. © 2025 Wiley-VCH GmbH.
Keyword ：
Aluminum gallium nitride Aluminum gallium nitride Gallium alloys Gallium alloys Gallium nitride Gallium nitride Heterojunction bipolar transistors Heterojunction bipolar transistors High electron mobility transistors High electron mobility transistors Integrated circuit design Integrated circuit design Junction gate field effect transistors Junction gate field effect transistors Laser beams Laser beams Network-on-chip Network-on-chip
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| GB/T 7714 | Lin, Juncheng , Su, Wenjuan , Chen, Chao et al. Structural Design and Optoelectronic Performance Study of Heterojunction Light-Emitting Transistor [J]. | Physica Status Solidi (A) Applications and Materials Science , 2025 , 222 (10) . |
| MLA | Lin, Juncheng et al. "Structural Design and Optoelectronic Performance Study of Heterojunction Light-Emitting Transistor" . | Physica Status Solidi (A) Applications and Materials Science 222 . 10 (2025) . |
| APA | Lin, Juncheng , Su, Wenjuan , Chen, Chao , Lin, Yibin , Ye, Jinyu , Zhou, Xiongtu et al. Structural Design and Optoelectronic Performance Study of Heterojunction Light-Emitting Transistor . | Physica Status Solidi (A) Applications and Materials Science , 2025 , 222 (10) . |
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Due to the simple structure, single-contact light-emitting diode (SC-LED) holds promise for applications in ultrahigh resolution micro-displays. However, the required alternating current (ac) operation poses challenges for grayscale modulation in image display applications. Therefore, it is of great significance to develop a potential grayscale control technology for the ac-driven SC-LEDs. In this work, the optical and electrical characteristics of the SC-LEDs are investigated, and an anomalous pulsewidth modulation (A-PWM) technology is proposed. In the A-PWM mode, the brightness decreases with the increasing pulsewidth, which is totally different from conventional pulsewidth modulation. The carrier transport model and the circuit model are established to clarify the A-PWM mechanism. Furthermore, the brightness division is carried out on the basis of the A-PWM, and the human eye brightness perception model is established. Nonlinear correction is applied to align the brightness change with the characteristics of human eye perception. This work proposes a brightness modulation method suitable for SC-LEDs, which is expected to be applied to ac-driven nano-pixel light-emitting displays.
Keyword ：
Alternating current (ac)-driven Alternating current (ac)-driven anomalous-pulsewidth modulation anomalous-pulsewidth modulation gallium nitride light-emitting diode (GaN-LED) gallium nitride light-emitting diode (GaN-LED) grayscale control grayscale control human perceptual characteristics human perceptual characteristics
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| GB/T 7714 | Xiao, Tianyu , Wang, Kun , Li, Wenhao et al. Anomalous-Pulsewidth Modulation of Single-Contact Light-Emitting Diode for Grayscale Control [J]. | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2024 , 71 (1) : 651-655 . |
| MLA | Xiao, Tianyu et al. "Anomalous-Pulsewidth Modulation of Single-Contact Light-Emitting Diode for Grayscale Control" . | IEEE TRANSACTIONS ON ELECTRON DEVICES 71 . 1 (2024) : 651-655 . |
| APA | Xiao, Tianyu , Wang, Kun , Li, Wenhao , Zhang, Yongai , Zhou, Xiongtu , Lin, Shanling et al. Anomalous-Pulsewidth Modulation of Single-Contact Light-Emitting Diode for Grayscale Control . | IEEE TRANSACTIONS ON ELECTRON DEVICES , 2024 , 71 (1) , 651-655 . |
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In the time of Internet of Things(IoT),alternating current electroluminescence(ACEL)has unique advantages in the fields of smart display and human-computer interaction.However,their reliance on external high-voltage AC power supplies poses challenges in terms of wearability and limits their practical application.This paper proposed an innovative scheme for preparing a feather triboelectric nanogenerator(F-TENG)using recyclable and environmentally friendly material.The highest open-circuit voltage,short-circuit current,and transferred charge of SF6-treated F-TENGs can reach 449 V,63 μA,and 152 nC,which enables easy lighting of BaTiO3-doped ACEL devices.Using a human electrical potential,a single-electrode F-TENG is combined with ACEL device for self-powered fingerprint recognition display.These works achieve self-powered flexible wearable ACEL devices,which are not only efficient and portable but also have good application prospects in the human-computer interaction,functional displays,and wearable electronic devices.
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| GB/T 7714 | Wandi Chen , Haonan Wang , Yibin Lin et al. Self-powered flexible fingerprint-recognition display based on a triboelectric nanogenerator [J]. | 纳米研究（英文版） , 2024 , 17 (4) : 3021-3028 . |
| MLA | Wandi Chen et al. "Self-powered flexible fingerprint-recognition display based on a triboelectric nanogenerator" . | 纳米研究（英文版） 17 . 4 (2024) : 3021-3028 . |
| APA | Wandi Chen , Haonan Wang , Yibin Lin , Xinyan Gan , Heng Tang , Yongai Zhang et al. Self-powered flexible fingerprint-recognition display based on a triboelectric nanogenerator . | 纳米研究（英文版） , 2024 , 17 (4) , 3021-3028 . |
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Neuromorphic computing, inspired by the highly interconnected and energy-efficient way the human brain processes information, has emerged as a promising technology for post-Moore's law era. This emerging technology can emulate the structures and the functions of the human brain and is expected to overcome the fundamental limitation of the current von Neumann computing architecture. Neuromorphic devices stand out as the key components of future electronic systems, exhibiting potential in shaping the landscape of neuromorphic computing. Especially, nanowire (NW)-based neuromorphic devices, with their advantages of high integration, high-speed computing, and low power consumption, have recently emerged as candidates for neuromorphic computing technology. Here, a critical overview of the current development and relevant research in the field of NW-based neuromorphic devices are provided. Neuromorphic devices based on different NW materials are comprehensively discussed, including Ag NW-based, organic NW-based, metal oxide NW-based, and semiconductor NW-based devices. Finally, as a foresight perspective, the potentials and the challenges of these NW-based neuromorphic devices for use as future brain-like electronics are discussed.
Keyword ：
artificialneuron artificialneuron artificial synapse artificial synapse brain-like electronics brain-like electronics nanowire nanowire nanowire network nanowire network neuromorphic computing neuromorphic computing neuromorphic device neuromorphic device synaptic plasticity synaptic plasticity
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| GB/T 7714 | Qiu, Jiawen , Li, Junlong , Li, Wenhao et al. Advancements in Nanowire-Based Devices for Neuromorphic Computing: A Review [J]. | ACS NANO , 2024 , 18 (46) : 31632-31659 . |
| MLA | Qiu, Jiawen et al. "Advancements in Nanowire-Based Devices for Neuromorphic Computing: A Review" . | ACS NANO 18 . 46 (2024) : 31632-31659 . |
| APA | Qiu, Jiawen , Li, Junlong , Li, Wenhao , Wang, Kun , Zhang, Shuqian , Suk, Chan Hee et al. Advancements in Nanowire-Based Devices for Neuromorphic Computing: A Review . | ACS NANO , 2024 , 18 (46) , 31632-31659 . |
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