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author:

Wang, Peng-Fei (Wang, Peng-Fei.) [1] (Scholars:王鹏飞) | Hu, Qianqian (Hu, Qianqian.) [2] | Zheng, Tan (Zheng, Tan.) [3] | Liu, Yu (Liu, Yu.) [4] | Xu, Xiaofeng (Xu, Xiaofeng.) [5] | Sun, Jia-Lin (Sun, Jia-Lin.) [6]

Indexed by:

Scopus SCIE

Abstract:

Vanadium dioxide (VO2), due to its electrically induced metal-to-insulator transition with dramatic changes in electrical and optical properties, is considered to be a powerful material for electro-optical devices. However, there are still some controversies about phase transition mechanism under voltage. Here, based on optical characterizations on VO2 crystal nanofilm during the whole process of phase transition, temporal evolution and spatial distribution of changes in electricity, optic and temperature are investigated simultaneously, to explore the mechanism. The variations of Raman spectrum and reflected spectrum, and changes in current and temperature are evidences for occurrence of phase transition, which exhibit different changing behaviors with time and space. These results offer a better understanding of the phase transition mechanism, implying that lattice structure of VO2 changes gradually after applying voltage until the structure is completely converted to metallic structure, which causes a rapid increase in carrier density, resulting in a rapid change in current, reflected spectrum and temperature. Temperature rise before phase transition and applied electric field alone are not enough for triggering metal-insulator transition, but these two factors can act synergistically on structural transformation to induce phase transition.

Keyword:

phase transition Raman spectrum reflected spectrum spatial distribution temperature temporal evolution vanadium dioxide

Community:

  • [ 1 ] [Wang, Peng-Fei]Fuzhou Univ, Coll Mech Engn & Automat, Fuzhou 350108, Peoples R China
  • [ 2 ] [Liu, Yu]Fuzhou Univ, Coll Mech Engn & Automat, Fuzhou 350108, Peoples R China
  • [ 3 ] [Hu, Qianqian]Tsinghua Univ, Collaborat Innovat Ctr Quantum Matter, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China
  • [ 4 ] [Sun, Jia-Lin]Tsinghua Univ, Collaborat Innovat Ctr Quantum Matter, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China
  • [ 5 ] [Zheng, Tan]Donghua Univ, Songjiang Dist, Dept Appl Phys, 2999 North Renmin Rd, Shanghai 201620, Peoples R China
  • [ 6 ] [Xu, Xiaofeng]Donghua Univ, Songjiang Dist, Dept Appl Phys, 2999 North Renmin Rd, Shanghai 201620, Peoples R China

Reprint 's Address:

  • [Sun, Jia-Lin]Tsinghua Univ, Collaborat Innovat Ctr Quantum Matter, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China;;[Xu, Xiaofeng]Donghua Univ, Songjiang Dist, Dept Appl Phys, 2999 North Renmin Rd, Shanghai 201620, Peoples R China

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Source :

CRYSTALS

ISSN: 2073-4352

Year: 2020

Issue: 9

Volume: 10

2 . 5 8 9

JCR@2020

2 . 4 0 0

JCR@2023

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:196

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count: 9

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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