Depending　on　the　storage　mechanisms,　organic　field-effect　transistor　(OFET)　memory　is　usually　divided　into　floating　gate　memory,　ferroelectric　memory,　and　polymer-electret-based　memory.　In　this　work,　a　new　type　of　nonvolatile　OFET　memory　is　proposed　by　simply　blending　a　p-type　semiconductor　and　a　n-type　semiconductor　without　using　an　extra　trapping　layer.　The　results　show　that　the　memory　window　can　be　effectively　modulated　by　the　dopant　concentration　of　the　n-type　semiconductor.　With　the　addition　of　a　5%　n-type　semiconductor,　blending　devices　exhibit　a　large　memory　window　up　to　57.7　V,　an　ON/OFF　current　ratio　(I-ON/I-OFF)　approximate　to　10(5),　and　a　charge　retention　time　of　over　10　years,　which　is　comparable　or　even　better　than　those　of　most　of　the　traditional　OFET　memories.　The　discontinuous　n-type　semiconductor　is　set　as　a　charge-trapping　center　for　charge　storage　due　to　the　quantum　well-like　organic　heterojunctions.　The　generalization　of　this　method　is　also　investigated　in　other　organic　systems.　Moreover,　the　blend　devices　are　also　applied　to　optical　memory　and　show　multilevel　optical　storage,　which　are　further　scaled　up　to　8　x　8　array　to　map　up　two-dimensional　(2D)　optical　images　with　long-term　retention　and　reprogramming　characteristic.　The　results　reveal　that　the　novel　system　design　has　great　potential　application　in　the　field　of　digital　image　memory　and　photoelectronic　system.