All-inorganic　quantum-dot　light　emitting　diodes　(QLEDs)　have　attracted　much　attention　due　to　their　high　stability.　The　main　challenge　in　an　all-inorganic　QLED　is　that　the　hole　mobility　of　the　inorganic　hole　transport　layer　(HTL)　is　significantly　lower　than　the　electron　mobility　of　the　inorganic　electron　transport　layer　(ETL)　which　causes　unbalanced　charge　injection　and　subsequent　low　performance.　To　address　this　issue,　a　novel　gate-tunable　all-inorganic　QLED　is　proposed,　where　the　additional　gate　electrode　is　able　to　modulate　the　hole　injection　ability　and　then　precisely　tune　the　charge　balance　in　the　QLED,　resulting　in　the　suppression　of　Auger　recombination　and　a　subsequent　significant　improvement　in　device　performance.　Finally,　the　all-inorganic　QLEDs　exhibit　high　performance　with　a　maximum　current　efficiency　(CE)　of　14.2　cd　A(-1)　and　an　external　quantum　efficiency　(EQE)　of　10.7%　along　with　high　stability.　The　realization　of　long　lifetime　and　high　performance　with　our　proposed　device　structure　opens　up　new　avenues　for　expanding　the　commercial　applications　of　QLEDs.　More　importantly,　this　strategy　is　broadly　applicable　to　various　QLED　systems　to　modulate　the　charge　injection　balance　for　further　improvement　in　the　device　performance　of　QLEDs.