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author:

Chen, Gengxu (Chen, Gengxu.) [1] (Scholars:陈耿旭) | Lin, Weikun (Lin, Weikun.) [2] | Chen, Huipeng (Chen, Huipeng.) [3] (Scholars:陈惠鹏) | Guo, Tailiang (Guo, Tailiang.) [4] (Scholars:郭太良)

Indexed by:

EI Scopus SCIE

Abstract:

Three-dimensional (3D) all-inorganic cesiumlead halide perovskite nanocrystals (NCs) have showed significant potential in optoelectronic applications due to their unparalleled optical properties, but it still remains problems in applications, especially their poor stability. Recently, zero-dimensional (0D) all-inorganic cesium lead halide perovskite NCs have been attracted much attention due to the high stability. In order to achieve excellent luminescent performance of perovskite NCs with high stability, it has been proposed a nanostructure of Cs4PbBr6 NCs with embedded CsPbBr3 (CsPbBr3@Cs4PbBr6). In this paper, we developed a simple one-pot synthesis method for CsPbBr3@Cs4PbBr6 NCs, which was processed in octane with oil bath under air ambient and simplify the tedious process of purification. By this method, it was obtained nearly uniform (46 +/- 2 nm) CsPbBr3@Cs4PbBr6NCs with high photoluminescence quantum yield (PLQY, 85.3%, in solution). Moreover, the synthesized CsPbBr3@Cs4PbBr6 NCs powder exhibited remarkable durability with hour-scale photostability, thermostability at 80 degrees C and long-term storage over 180 days in air. This simplified synthesis method would open a new avenue for simply enhancing the stability of perovskite nanocrystals, and pave a huge potential path for mass production of perovskite nanocrystals. (C) 2019 The Authors. Published by Elsevier Ltd.

Keyword:

Cesium lead halide nanocrystals High PLQY High stability One-pot synthesis Perovskite

Community:

  • [ 1 ] [Chen, Gengxu]Fuzhou Univ, Coll Phys & Informat Engn, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350108, Fujian, Peoples R China
  • [ 2 ] [Lin, Weikun]Fuzhou Univ, Coll Phys & Informat Engn, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350108, Fujian, Peoples R China
  • [ 3 ] [Chen, Huipeng]Fuzhou Univ, Coll Phys & Informat Engn, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350108, Fujian, Peoples R China
  • [ 4 ] [Guo, Tailiang]Fuzhou Univ, Coll Phys & Informat Engn, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350108, Fujian, Peoples R China

Reprint 's Address:

  • 陈耿旭

    [Chen, Gengxu]Fuzhou Univ, Coll Phys & Informat Engn, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350108, Fujian, Peoples R China

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Source :

MATERIALS & DESIGN

ISSN: 0264-1275

Year: 2019

Volume: 181

6 . 2 8 9

JCR@2019

7 . 6 0 0

JCR@2023

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:236

JCR Journal Grade:1

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count: 10

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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