A　novel　organic　phototransistor　memory　(OPTM)　with　architecture　design　is　fabricated　with　all-inorganic　perovskite　quantum　dots　(QDs)　as　charge　trapping　layer.　The　novel　architecture　enables　ultrashort　channel　length　and　vertical　the　charge　transfer　to　effectively　suppress　both　trapped　carriers　effect　and　interface　effect,　two　key　factors　which　impact　photonic　memory　performance.　Additionally,　perovskite　QDs　are　introduced　to　function　as　both　the　charge　trapping　layer　and　a　UV-light-responsive　material　that　emits　visible　light　that　can　be　subsequently　absorbed　by　the　active　layer,　leading　to　efficient　utilization　of　UV　light　to　generate　trapped　charges.　OPTM　exhibits　excellent　memory　properties　under　significantly　improved　light　conditions,　which　is　superior　to　previous　reports.　Moreover,　flexible　OPTM　exhibits　excellent　mechanical　stability,　which　is　associated　with　vertical　charge　transport　that　eliminates　the　effect　of　cracks　and　dislocations　formed　during　bending.　Furthermore,　an　OPTM　array　is　fabricated,　which　can　realize　imaging　and　memory　capability　with　long-term　retention　performance　and　shows　reproducibility　under　the　electric　erasing　and　reprogramming　process.　Hence,　with　this　novel　architecture,　OPTM　realizes　light　programming　with　a　short　time,　low　light　intensity,　and　broadband　photoresponse　along　with　excellent　memory　performance,　which　has　great　potential　for　practical　application,　especially　in　the　flexible　electronics　market.