Topological　insulator　nanostructures　with　large　surface-to-volume　ratios　are　expected　to　significantly　enhance　topological　surface　conduction　and　have　great　potential　applications　in　the　future.　We　have　synthesized　the　high　quality　bismuth　selenide　nanoplates　by　chemical　vapor　deposition　on　a　mica　substrate.　Meanwhile,　we　investigate　the　effect　of　different　growth　temperatures　and　gas　flow　on　the　morphology,　chemical　stoichiometry　and　structure　of　bismuth　selenide　nanoplates　by　scanning　electron　microscopy,　energy　dispersive　spectrometer　and　Raman　spectra,　respectively.　It　is　found　that　the　morphology　of　the　Bi2Se3　nanoplates　is　greatly　influenced　by　the　growth　temperature,　due　to　the　different　growth　dynamics　under　different　temperatures.　The　energy　dispersive　spectra　analysis　shows　that　the　Se/Bi　atomic　ratio　first　increases　and　then　decreases　with　increasing　temperature.　The　Raman　spectra　analysis　suggests　that　some　impurity　phase　appears　at　a　growth　temperature　of　630　degrees　C,　and　that　the　crystal　quality　is　worse　when　the　growth　temperature　is　increased　to　650　degrees　C.　We　also　find　that　gas　flow　will　affect　the　morphology　and　the　crystal　quality　of　bismuth　selenide　nanoplates,　but　it　has　little　effect　on　the　chemical　stoichiometry.　The　measurement　results　suggest　that　the　best　condition　to　synthesize　bismuth　selenide　nanoplates　by　chemical　vapor　deposition　on　a　mica　substrate　is　600　degrees　C　growth　temperature　and　70　sccm　gas　flow.