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author:

Marikani, A. (Marikani, A..) [1] | Selvamurugan, V. (Selvamurugan, V..) [2] | Mangamma, G. (Mangamma, G..) [3] | Ravi, S. (Ravi, S..) [4] | Krishnasharma, R. (Krishnasharma, R..) [5] | Chandrasekar, P. V. (Chandrasekar, P. V..) [6] | Kamruddin, M. (Kamruddin, M..) [7] | Madhavan, D. (Madhavan, D..) [8]

Indexed by:

Scopus SCIE CSCD

Abstract:

This paper reports the synthesis of neodymium substituted bismuth titanate nanoparticles (BNdT) for ferroelectric random access memory (FeRAM) based applications using sol-gel route. X-ray diffraction pattern showed that the BNdT nanoparticles exhibited perovskite structure with orthorhombic phase. The microstructure of the BNdT nanoparticles showed that the grains were in spherical structure with a bi-modal distribution of spheres. Dielectric constant and dielectric loss of BNdT nanoparticles were measured in the frequency range 100 Hz to 100kHz. Nd-substituted BNdT nanoparticles showed the high remanent polarization (P-r=33.2 mu C/cm(2), Ec=62.5 kV/cm) than pure bismuth titanate (BT) (P-r=14.6 mu C/cm(2), Ec=182.8 kV/cm) ideal for FeRAM based applications. The occurrence of red shift in photoluminescence (PL) spectrum is considered to be due to the isomerisation that may occur from the heating of samples.

Keyword:

Dielectric properties Ferroelectric materials Nanostructures Photoluminescence Sol-gel method X-ray diffraction

Community:

  • [ 1 ] [Marikani, A.]Mepco Schlenk Engn Coll, Dept Phys, Sivakasi 626005, India
  • [ 2 ] [Selvamurugan, V.]Mepco Schlenk Engn Coll, Dept Phys, Sivakasi 626005, India
  • [ 3 ] [Ravi, S.]Mepco Schlenk Engn Coll, Dept Phys, Sivakasi 626005, India
  • [ 4 ] [Krishnasharma, R.]Mepco Schlenk Engn Coll, Dept Phys, Sivakasi 626005, India
  • [ 5 ] [Mangamma, G.]Indira Gandhi Ctr Atom Res IGCAR, Surface & Nanosci Div, Mat Sci Grp, Kalpakkam 603102, Tamil Nadu, India
  • [ 6 ] [Kamruddin, M.]Indira Gandhi Ctr Atom Res IGCAR, Surface & Nanosci Div, Mat Sci Grp, Kalpakkam 603102, Tamil Nadu, India
  • [ 7 ] [Chandrasekar, P. V.]Fuzhou Univ, Inst Optoelect Technol, Fuzhou 350002, Peoples R China
  • [ 8 ] [Madhavan, D.]Mepco Schlenk Engn Coll, Dept Chem, Sivakasi 626005, India

Reprint 's Address:

  • [Selvamurugan, V.]Mepco Schlenk Engn Coll, Dept Phys, Sivakasi 626005, India

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Source :

PROGRESS IN NATURAL SCIENCE-MATERIALS INTERNATIONAL

ISSN: 1002-0071

CN: 10-1147/N

Year: 2016

Issue: 6

Volume: 26

Page: 528-532

2 . 0 3 8

JCR@2016

4 . 8 0 0

JCR@2023

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:324

JCR Journal Grade:2

CAS Journal Grade:4

Cited Count:

WoS CC Cited Count: 24

SCOPUS Cited Count: 24

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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