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author:

Ooi, Poh Choon (Ooi, Poh Choon.) [1] | Lin, Jian (Lin, Jian.) [2] | Kim, Tae Whan (Kim, Tae Whan.) [3] | Li, Fushan (Li, Fushan.) [4] (Scholars:李福山)

Indexed by:

EI Scopus SCIE

Abstract:

Tristable switching nonvolatile memory (NVM) devices based on graphene quantum dots (GQDs) sandwiched between multi-stacked poly (methyl methacrylate) (PMMA) layers were fabricated on indium-tin-oxide (ITO)-coated glass substrates by using a solution-processed method. Current-voltage (I-V) curves at 300 K for the silver nanowire/PMMA/GQD/PMMA/GQD/PMMA/ITO/glass devices showed tristable switching currents with high-resistance, intermediate-resistance, and low-resistance states. The device's cycling endurance of the three resistance states remained stable with a distinguishable value for each resistance state over 1000 cycles, and the obtained retention results showed well-distinguished resistance states without degradation for up to 1 x 10(4) s. Schottky emission, Poole-Frenkel emission, trapped-charge limited-current, and ohmic conduction were proposed as the dominant conduction mechanisms for the fabricated NVM devices based on the obtained I-V characteristics. The described energy-band diagrams confirm the proposed conduction band mechanisms. (C) 2016 Published by Elsevier B.V.

Keyword:

Conduction mechanisms Electrical characteristic Filament Graphene quantum dot Poly(methyl methacrylate) Tristable switching

Community:

  • [ 1 ] [Ooi, Poh Choon]Hanyang Univ, Dept Elect & Comp Engn, Seoul 133791, South Korea
  • [ 2 ] [Kim, Tae Whan]Hanyang Univ, Dept Elect & Comp Engn, Seoul 133791, South Korea
  • [ 3 ] [Ooi, Poh Choon]Fuzhou Univ, Inst Optoelect Display, Fuzhou 350002, Peoples R China
  • [ 4 ] [Lin, Jian]Fuzhou Univ, Inst Optoelect Display, Fuzhou 350002, Peoples R China
  • [ 5 ] [Li, Fushan]Fuzhou Univ, Inst Optoelect Display, Fuzhou 350002, Peoples R China

Reprint 's Address:

  • 李福山

    [Kim, Tae Whan]Hanyang Univ, Dept Elect & Comp Engn, Seoul 133791, South Korea;;[Li, Fushan]Fuzhou Univ, Inst Optoelect Display, Fuzhou 350002, Peoples R China

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Source :

ORGANIC ELECTRONICS

ISSN: 1566-1199

Year: 2016

Volume: 38

Page: 379-383

3 . 3 9 9

JCR@2016

2 . 7 0 0

JCR@2023

ESI Discipline: PHYSICS;

ESI HC Threshold:186

JCR Journal Grade:1

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count: 23

SCOPUS Cited Count: 23

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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