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Abstract:
Tristable switching nonvolatile memory (NVM) devices based on graphene quantum dots (GQDs) sandwiched between multi-stacked poly (methyl methacrylate) (PMMA) layers were fabricated on indium-tin-oxide (ITO)-coated glass substrates by using a solution-processed method. Current-voltage (I-V) curves at 300 K for the silver nanowire/PMMA/GQD/PMMA/GQD/PMMA/ITO/glass devices showed tristable switching currents with high-resistance, intermediate-resistance, and low-resistance states. The device's cycling endurance of the three resistance states remained stable with a distinguishable value for each resistance state over 1000 cycles, and the obtained retention results showed well-distinguished resistance states without degradation for up to 1 x 10(4) s. Schottky emission, Poole-Frenkel emission, trapped-charge limited-current, and ohmic conduction were proposed as the dominant conduction mechanisms for the fabricated NVM devices based on the obtained I-V characteristics. The described energy-band diagrams confirm the proposed conduction band mechanisms. (C) 2016 Published by Elsevier B.V.
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ORGANIC ELECTRONICS
ISSN: 1566-1199
Year: 2016
Volume: 38
Page: 379-383
3 . 3 9 9
JCR@2016
2 . 7 0 0
JCR@2023
ESI Discipline: PHYSICS;
ESI HC Threshold:186
JCR Journal Grade:1
CAS Journal Grade:2
Cited Count:
WoS CC Cited Count: 23
SCOPUS Cited Count: 23
ESI Highly Cited Papers on the List: 0 Unfold All
WanFang Cited Count:
Chinese Cited Count:
30 Days PV: 1
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