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author:

Wang, Wen-Dong (Wang, Wen-Dong.) [1] | Lin, Xiao-Qiang (Lin, Xiao-Qiang.) [2] | Zhao, Hai-Bo (Zhao, Hai-Bo.) [3] | Lu, Qiu-Feng (Lu, Qiu-Feng.) [4] (Scholars:吕秋丰)

Indexed by:

EI Scopus SCIE

Abstract:

Three polyaniline/graphene oxide (PANI/GO) composites were fabricated by means of an in-situ polymerization of aniline monomers in the presence of graphene oxide (GO). And then, nitrogen-doped graphene was prepared by pyrolysis of the PANI/GO composite. The structures and morphologies of the samples were characterized by using different techniques, and the electrochemical performances of the nitrogen doped graphene samples were further investigated. When PANI/GO10 (the GO feed content in PANI/GO is 10 wt.%) was used as a precursor, and the pyrolysis temperature is 800 degrees C, nitrogen content of the as prepared nitrogen-doped graphene (i.e., NG10-800) is 9.2 at.%. The specific capacitance of NG10-800 is up to 206 Fg(-1) at a current density of 1 A g(-1), indicating an excellent electrochemical performance. After 1000 cycles at a scan rate of 50 mV s(-1), the capacitance retention of NG10-800 is about 92.5% of the initial value, suggesting an excellent cycling stability. (C) 2016 Elsevier B.V. All rights reserved.

Keyword:

Nitrogen-doped graphene Polyaniline Pyrolysis Supercapacitor

Community:

  • [ 1 ] [Wang, Wen-Dong]Fuzhou Univ, Coll Mat Sci & Engn, 2 Xueyuan Rd, Fuzhou 350116, Peoples R China
  • [ 2 ] [Lin, Xiao-Qiang]Fuzhou Univ, Coll Mat Sci & Engn, 2 Xueyuan Rd, Fuzhou 350116, Peoples R China
  • [ 3 ] [Zhao, Hai-Bo]Fuzhou Univ, Coll Mat Sci & Engn, 2 Xueyuan Rd, Fuzhou 350116, Peoples R China
  • [ 4 ] [Lu, Qiu-Feng]Fuzhou Univ, Coll Mat Sci & Engn, 2 Xueyuan Rd, Fuzhou 350116, Peoples R China

Reprint 's Address:

  • 吕秋丰

    [Lu, Qiu-Feng]Fuzhou Univ, Coll Mat Sci & Engn, 2 Xueyuan Rd, Fuzhou 350116, Peoples R China

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Source :

JOURNAL OF ANALYTICAL AND APPLIED PYROLYSIS

ISSN: 0165-2370

Year: 2016

Volume: 120

Page: 27-36

3 . 4 7 1

JCR@2016

5 . 8 0 0

JCR@2023

ESI Discipline: CHEMISTRY;

ESI HC Threshold:235

JCR Journal Grade:1

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count: 29

SCOPUS Cited Count: 30

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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