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author:

Zhou Baiyang (Zhou Baiyang.) [1] (Scholars:周白杨) | Weng Zhangzhao (Weng Zhangzhao.) [2] | Li Siwen (Li Siwen.) [3] | Chen Zhijian (Chen Zhijian.) [4] | Liu Quanzhou (Liu Quanzhou.) [5] | Li Jianxin (Li Jianxin.) [6]

Indexed by:

EI Scopus SCIE PKU CSCD

Abstract:

A set of Sm-Fe-B films with different compressive stresses were prepared on substrates with different prestrains by ion beam spurting deposition (IBSD). The influence of compressive stress on the magnetic anisotropy and the magnetostriction in sputter-deposited amorphous Sm-Fe-B films were investigated. Films affected by compressive stress all show in-plane anisotropy and easy axis along the direction of stress is induced in the film with compressive stress increasing. Magnetostriction of Sm-Fe-B films affected by compressive stress is improved in low magnetic field while saturation of magnetostriction decreases slightly. At the same time, the magnetostriction rises rapidly in low field measured in a field parallel to the film plane at room temperature with the growth of compressive stress. It is also found that the magnetic domain component which is perpendicular to the film plane increases on a small scale, though the magnetic domain or the magnetic domain component parallel to film plane still exist dominantly.

Keyword:

compressive stress magnetic domain magnetostrictive characteristics Sm-Fe-B film

Community:

  • [ 1 ] [Zhou Baiyang]Fuzhou Univ, Fuzhou 350108, Peoples R China
  • [ 2 ] [Weng Zhangzhao]Fuzhou Univ, Fuzhou 350108, Peoples R China
  • [ 3 ] [Li Siwen]Fuzhou Univ, Fuzhou 350108, Peoples R China
  • [ 4 ] [Chen Zhijian]Fuzhou Univ, Fuzhou 350108, Peoples R China
  • [ 5 ] [Liu Quanzhou]Fuzhou Univ, Fuzhou 350108, Peoples R China
  • [ 6 ] [Li Jianxin]Fuzhou Univ, Fuzhou 350108, Peoples R China

Reprint 's Address:

  • 周白杨

    [Zhou Baiyang]Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350108, Peoples R China

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Source :

RARE METAL MATERIALS AND ENGINEERING

ISSN: 1002-185X

CN: 61-1154/TG

Year: 2016

Issue: 4

Volume: 45

Page: 848-851

0 . 2 5 8

JCR@2016

0 . 6 0 0

JCR@2023

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:324

JCR Journal Grade:4

CAS Journal Grade:4

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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