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author:

Chen, Leifeng (Chen, Leifeng.) [1] | He, Hong (He, Hong.) [2] | Lei, Da (Lei, Da.) [3] | Menggen, QiQiGe (Menggen, QiQiGe.) [4] | Hu, Liqin (Hu, Liqin.) [5] | Yang, Deren (Yang, Deren.) [6]

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EI Scopus SCIE

Abstract:

Graphene (GP) field emitters fabricated by the electrophoretic deposition (EPD) and their field emission performance can be enhanced and tailed simultaneously by chemical doping Au nanoparticles (NPs). It was found that doped Au NPs could both decrease the resistance of GP emitters and increase the density of field emission sites. The Au-doped GP emitters showed lower turn-on voltage, lower threshold field, higher field enhancement factor, higher luminance intensity, and emitting uniformity, compared with that of pristine GP. This study will provide us to further understand the role of doping effect on the GP emitters used for the future display. (C) 2013 AIP Publishing LLC.

Keyword:

Community:

  • [ 1 ] [Chen, Leifeng]Hangzhou Dianzi Univ, Coll Mat & Environm Engn, Hangzhou 310018, Zhejiang, Peoples R China
  • [ 2 ] [He, Hong]Hangzhou Dianzi Univ, Coll Mat & Environm Engn, Hangzhou 310018, Zhejiang, Peoples R China
  • [ 3 ] [Chen, Leifeng]Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
  • [ 4 ] [Yang, Deren]Zhejiang Univ, State Key Lab Silicon Mat, Hangzhou 310027, Zhejiang, Peoples R China
  • [ 5 ] [Chen, Leifeng]Zhejiang Univ, Dept Mat Sci & Engn, Hangzhou 310027, Zhejiang, Peoples R China
  • [ 6 ] [Yang, Deren]Zhejiang Univ, Dept Mat Sci & Engn, Hangzhou 310027, Zhejiang, Peoples R China
  • [ 7 ] [He, Hong]Jiangnan Univ, Minist Educ, Key Lab Ecotext, Wuxi 214122, Jiangsu, Peoples R China
  • [ 8 ] [Lei, Da]Inner Mongolia Univ, Ordos Coll, Ordos 017000, Peoples R China
  • [ 9 ] [Menggen, QiQiGe]Inner Mongolia Univ, Ordos Coll, Ordos 017000, Peoples R China
  • [ 10 ] [Hu, Liqin]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350002, Peoples R China

Reprint 's Address:

  • [Chen, Leifeng]Hangzhou Dianzi Univ, Coll Mat & Environm Engn, Hangzhou 310018, Zhejiang, Peoples R China

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Source :

APPLIED PHYSICS LETTERS

ISSN: 0003-6951

Year: 2013

Issue: 23

Volume: 103

3 . 5 1 5

JCR@2013

3 . 5 0 0

JCR@2023

ESI Discipline: PHYSICS;

JCR Journal Grade:1

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count: 26

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 3

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