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author：

Chen, Leifeng (Chen, Leifeng.) [1] | He, Hong (He, Hong.) [2] | Lei, Da (Lei, Da.) [3] | Menggen, Qiqige (Menggen, Qiqige.) [4] | Hu, Liqin (Hu, Liqin.) [5] | Yang, Deren (Yang, Deren.) [6]

Indexed by：

EI

Abstract：

Graphene　(GP)　field　emitters　fabricated　by　the　electrophoretic　deposition　(EPD)　and　their　field　emission　performance　can　be　enhanced　and　tailed　simultaneously　by　chemical　doping　Au　nanoparticles　(NPs).　It　was　found　that　doped　Au　NPs　could　both　decrease　the　resistance　of　GP　emitters　and　increase　the　density　of　field　emission　sites.　The　Au-doped　GP　emitters　showed　lower　turn-on　voltage,　lower　threshold　field,　higher　field　enhancement　factor,　higher　luminance　intensity,　and　emitting　uniformity,　compared　with　that　of　pristine　GP.　This　study　will　provide　us　to　further　understand　the　role　of　doping　effect　on　the　GP　emitters　used　for　the　future　display.　©　2013　AIP　Publishing　LLC.

Keyword：

Electrophoresis Field emission Gold nanoparticles Graphene Nanoparticles

Community：

  • [ 1 ] [Chen, Leifeng]College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, China
  • [ 2 ] [Chen, Leifeng]State Key Lab of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
  • [ 3 ] [He, Hong]College of Materials and Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018, China
  • [ 4 ] [He, Hong]Key Laboratory of Eco-Textiles, Ministry of Education, Jiangnan University, Wuxi 214122, Jiangsu, China
  • [ 5 ] [Lei, Da]Ordos College of Inner Mongolia University, Inner Mongolia University, Ordos 017000, China
  • [ 6 ] [Menggen, Qiqige]Ordos College of Inner Mongolia University, Inner Mongolia University, Ordos 017000, China
  • [ 7 ] [Hu, Liqin]College of Physics and Information Engineering, Fuzhou University, Fuzhou 350002, China
  • [ 8 ] [Yang, Deren]State Key Lab of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China

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Source ：

Applied Physics Letters

ISSN： 0003-6951

Year： 2013

Issue： 23

Volume： 103

3 . 5 1 5

JCR@2013

3 . 5 0 0

JCR@2023

JCR Journal Grade：1

CAS Journal Grade：2

Cited Count：

WoS CC Cited Count：

SCOPUS Cited Count： 28

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 0

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