Eu3+-doped　SiO2-ZnO-Ga2O3　composite　was　fabricated　by　sol-gel　method.　X-ray　diffraction　analysis　and　transmission　electron　microscopy　observation　revealed　that　gamma-Ga2O3　nanocrystals　were　formed　and　distributed　homogeneously　among　the　amorphous　matrix.　The　influence　of　the　Ga2O3　content　on　the　Eu3+　luminescence　properties　was　discussed.　Importantly,　the　Eu3+　emission　intensity　of　the　composite　with　20%　Ga2O3　was　about　5.5　times　stronger　than　that　of　the　sample　without　Ga2O3,　which　is　attributed　to　the　efficient　energy　transfer　from　the　nanocrystals　to　the　rare-earth　ions.　(C)　2013　WILEY-VCH　Verlag　GmbH　&　Co.　KGaA,　Weinheim