In　this　reported　study,　Al-doped　ZnS　(ZnS:Al)　thin　films　were　fabricated　by　chemical　bath　deposition　in　alkaline　condition　along　with　a　stable　complexing　agent　of　sodium　citrate　in　ammonia/ammonium　chloride　buffer　solution.　Al　concentrations　were　varied　from　0　to　10　at.%.　The　structure　and　composition　of　the　films　were　confirmed　by　X-ray　diffraction　(XRD),　Fourier　transform　infrared　(FTIR)　spectra　and　Raman　spectroscopy.　The　XRD,　FTIR　and　Raman　spectra　confirmed　the　existence　of　ZnS　and　Al-S　bond,　which　had　some　effects　on　the　properties　of　the　films.　The　optical　characteristics　indicated　the　changes　of　the　bandgap　with　the　Al-doping　concentrations.　The　resistivity　of　the　ZnS:　Al　films　with　different　Al-doping　concentrations　after　annealing　was　analysed　and　the　sample　with　6　at.%　Al　concentration　had　the　lowest　resistivity　of　9.9　x　10(4)　Omega　cm.