The　authors　propose　a　simple　Ar　plasma　treatment　method　to　selectively　damage　the　area　underneath　p-pad　electrode　of　GaN-based　light-emitting　diodes　(LEDs).　It　was　found　that　we　could　form　a　highly　resistive　area　so　that　the　injected　carriers　will　be　forced　to　spread　out　horizontally　for　the.　LED.　Under　20　mA　current　injection,　it　was　found　that　the　output　powers　were　16.0,　17.9　and　17.3　mW　while　the　forward　voltages　were　3.17,　3.19　and　3.20　V　for　conventional　LED　and　LED　with　SiO2　layer,　respectively.　Moreover,　the　LED　with　Ar　plasma　treatment　is　superior　to　the　other　LEDs　while　operating　at　a　higher　injection　current.　(c)　2011　Elsevier　Ltd.　All　rights　reserved.