GaN-based LEDs with Ar plasma treatment - Details

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Abstract：

The　authors　propose　a　simple　Ar　plasma　treatment　method　to　selectively　damage　the　area　underneath　p-pad　electrode　of　GaN-based　light-emitting　diodes　(LEDs).　It　was　found　that　we　could　form　a　highly　resistive　area　so　that　the　injected　carriers　will　be　forced　to　spread　out　horizontally　for　the　LED.　Under　20　mA　current　injection,　it　was　found　that　the　output　powers　were　16.0,　17.9　and　17.3　mW　while　the　forward　voltages　were　3.17,　3.19　and　3.20　V　for　conventional　LED　and　LED　with　SiO2　layer,　respectively.　Moreover,　the　LED　with　Ar　plasma　treatment　is　superior　to　the　other　LEDs　while　operating　at　a　higher　injection　current.　©　2011　Elsevier　Ltd.　All　rights　reserved.

Keyword：

Argon Gallium nitride III-V semiconductors Light emitting diodes Plasma applications Plasma theory Silica

Community：

[ 1 ] [Kuo, D.S.]Department of Electrical Engineering, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan
[ 2 ] [Lam, K.T.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, Fujian 350108, China
[ 3 ] [Wen, K.H.]College of Physics and Information Engineering, Fuzhou University, Fuzhou, Fujian 350108, China
[ 4 ] [Chang, S.J.]Department of Electrical Engineering, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan
[ 5 ] [Ko, T.K.]Epistar Corporation, Nitride Device Research and Development Center, Hsin-Shi, Tainan 744, Taiwan
[ 6 ] [Hon, S.J.]Epistar Corporation, Nitride Device Research and Development Center, Hsin-Shi, Tainan 744, Taiwan

Reprint 's Address：

[chang, s.j.]department of electrical engineering, advanced optoelectronic technology center, national cheng kung university, tainan 70101, taiwan

Email：

changsj@mail.ncku.edu.tw

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Source ：

Materials Science in Semiconductor Processing

ISSN： 1369-8001

Year： 2012

Issue： 1

Volume： 15

Page： 52-55

1 . 3 3 8

JCR@2012

4 . 2 0 0

JCR@2023

JCR Journal Grade：2

CAS Journal Grade：4

Cited Count：

WoS CC Cited Count：

SCOPUS Cited Count： 5

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 0

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