We　report　a　novel　resistive　random-access　memory　(RRAM)　device　with　a　graphene　oxide　(GO)　composite　film　embedded　with　TiO2　nano-particles　as　its　resistive　switching　layer.　The　efficient　physi-　(or　chem-)　sorption　of　TiO2　endows　the　GO/TiO2　composites　with　superior　bipolar　resistive　switching　behaviors,　including　low　switching　voltage　(about　+/-　1V),　tight　distributions　of　HRS　and　LRS,　long　retention　of　more　than　10(4)s　and　steady　endurance　performances,　which　is　superior　than　GO　device.　The　mechanism　of　conduction　and　resistance　switching　are　studied.