This　paper　describes　the　design　of　a　differential　class-E　PA　for　Bluetooth　applications　in　0.18　mu　m　CMOS　technology　with　load　mismatch　protection　and　power　control　features.　The　breakdown　induced　by　load　mismatch　can　be　avoided　by　attenuating　the　RF　power　to　the　final　stage　during　over　voltage　conditions.　Power　control　is　realized　by　means　of　＂open　loop＂　techniques　to　regulate　the　power　supply　voltage,　and　a　novel　controllable　bias　network　with　temperature　compensated　is　proposed,　which　allows　a　moderate　power　control　slope　(dB/V)　to　be　achieved.　Post-layout　Simulation　results　show　that　the　level　of　output　power　can　be　controlled　in　2　dBm　steps;　especially　the　output　power　in　every　step　is　quite　insensitive　to　temperature　variations.