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author:

Yu, Rengjian (Yu, Rengjian.) [1] | Li, Enlong (Li, Enlong.) [2] | Wu, Xiaomin (Wu, Xiaomin.) [3] | Yan, Yujie (Yan, Yujie.) [4] | He, Weixin (He, Weixin.) [5] | He, Lihua (He, Lihua.) [6] | Chen, Jinwei (Chen, Jinwei.) [7] | Chen, Huipeng (Chen, Huipeng.) [8] | Guo, Tailiang (Guo, Tailiang.) [9]

Indexed by:

EI

Abstract:

Neuromorphic computing inspired by the neural systems in human brain will overcome the issue of independent information processing and storage. An artificial synaptic device as a basic unit of a neuromorphic computing system can perform signal processing with low power consumption, and exploring different types of synaptic transistors is essential to provide suitable artificial synaptic devices for artificial intelligence. Hence, for the first time, an electret-based synaptic transistor (EST) is presented, which successfully shows synaptic behaviors including excitatory/inhibitory postsynaptic current, paired-pulse facilitation/depression, long-term memory, and high-pass filtering. Moreover, a neuromorphic computing simulation based on our EST is performed using the handwritten artificial neural network, which exhibits an excellent recognition accuracy (85.88%) after 120 learning epochs, higher than most reported organic synaptic transistors and close to the ideal accuracy (92.11%). Such a novel synaptic device enriches the diversity of synaptic transistors, laying the foundation for the diversified development of the next generation of neuromorphic computing systems. Copyright © 2020 American Chemical Society.

Keyword:

Artificial intelligence Character recognition Electrets Green computing High pass filters Signal processing Transistors

Community:

  • [ 1 ] [Yu, Rengjian]Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou; 350002, China
  • [ 2 ] [Li, Enlong]Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou; 350002, China
  • [ 3 ] [Wu, Xiaomin]Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou; 350002, China
  • [ 4 ] [Yan, Yujie]Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou; 350002, China
  • [ 5 ] [He, Weixin]Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou; 350002, China
  • [ 6 ] [He, Lihua]Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou; 350002, China
  • [ 7 ] [Chen, Jinwei]Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou; 350002, China
  • [ 8 ] [Chen, Huipeng]Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou; 350002, China
  • [ 9 ] [Chen, Huipeng]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China
  • [ 10 ] [Guo, Tailiang]Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou; 350002, China
  • [ 11 ] [Guo, Tailiang]Fujian Science and Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350100, China

Reprint 's Address:

  • [chen, huipeng]institute of optoelectronic display, national and local united engineering lab of flat panel display technology, fuzhou university, fuzhou; 350002, china;;[chen, huipeng]fujian science and technology innovation laboratory for optoelectronic information of china, fuzhou; 350100, china

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Source :

ACS Applied Materials and Interfaces

ISSN: 1944-8244

Year: 2020

Issue: 13

Volume: 12

Page: 15446-15455

9 . 2 2 9

JCR@2020

8 . 5 0 0

JCR@2023

ESI HC Threshold:196

JCR Journal Grade:1

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 104

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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