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author:

Lan, Shuqiong (Lan, Shuqiong.) [1] | Ke, Yudan (Ke, Yudan.) [2] | Chen, Huipeng (Chen, Huipeng.) [3] (Scholars:陈惠鹏)

Indexed by:

EI SCIE

Abstract:

Neuromorphic computing, with information sensing, processing, and storage capabilities, is driving the development of a new generation of artificial intelligence (AI). Photonic synaptic devices are essential components for improving information processing efficiency owing to their advantages of a high propagation speed, low latency, and large bandwidth. In this study, a photonic synaptic transistor simply based on p-type organic semiconductor blending with n-type organic semiconductor was fabricated via simple solution process in which only light was used to control the enhancement and inhibition of the synaptic conductance. The device can simulate fundamental synaptic properties. Additionally, the coordination between light stimulation and electrical stimulation was investigated, and the results show that light-pulse stimulation is beneficial for increasing the response current simulated by electrical pulses. This work represents a significant step towards the realization of high-efficiency AI electronics.

Keyword:

Artificial intelligence Biology blends organic field-effect transistors organic semiconductors Organic semiconductors Photonics Photonic synapses Semiconductor device measurement Synapses Transistors

Community:

  • [ 1 ] [Lan, Shuqiong]Jimei Univ, Sch Sci, Dept Phys, Xiamen 361021, Peoples R China
  • [ 2 ] [Ke, Yudan]Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350002, Peoples R China
  • [ 3 ] [Chen, Huipeng]Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350002, Peoples R China

Reprint 's Address:

  • 陈惠鹏

    [Chen, Huipeng]Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350002, Peoples R China

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Source :

IEEE ELECTRON DEVICE LETTERS

ISSN: 0741-3106

Year: 2021

Issue: 8

Volume: 42

Page: 1180-1183

4 . 8 1 6

JCR@2021

4 . 1 0 0

JCR@2023

ESI Discipline: ENGINEERING;

ESI HC Threshold:105

JCR Journal Grade:1

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count: 21

SCOPUS Cited Count: 21

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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