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author:

Ma, Fumin (Ma, Fumin.) [1] | Xu, Zhongwei (Xu, Zhongwei.) [2] | Liu, Yang (Liu, Yang.) [3] | Zheng, Yueting (Zheng, Yueting.) [4] | Chen, Wei (Chen, Wei.) [5] | Hu, Hailong (Hu, Hailong.) [6] | Guo, Tailiang (Guo, Tailiang.) [7] | Li, Fushan (Li, Fushan.) [8] | Wu, Chaoxing (Wu, Chaoxing.) [9] | Kim, Tae Whan (Kim, Tae Whan.) [10]

Indexed by:

EI

Abstract:

Simulating synaptic function and building brain-inspired computers have received widespread attention. The memristor is considered to be an electronic version of the synapse and an excellent element for creating a brand-new artificial intelligence system in the future. However, most memristor-based electronic synapses currently exhibit low stability due to complex resistance switching processes. Based on a controllable in-situ formation strategy that we were able to employ with atomic layer deposition, we fabricated electronic synapses based on Au@Al2O3 core-shell nanoparticles. Our device exhibited extremely reliable, stable, and durable performance and showed a capability to emulate biological synaptic behavior, including synaptic plasticity, long-term depression (LTD), long-term potentiation (LTP), amplitude dependence, and frequency dependence. This research provides a strategy for manufacturing highly-reliable electronic synapses for neuromorphic applications. © 2019 IEEE.

Keyword:

Alumina Aluminum oxide Artificial intelligence Atomic layer deposition Core shell nanoparticles Electronics industry Gold nanoparticles Industrial research Memristors Nanoparticles Shells (structures)

Community:

  • [ 1 ] [Ma, Fumin]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, China
  • [ 2 ] [Xu, Zhongwei]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, China
  • [ 3 ] [Liu, Yang]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, China
  • [ 4 ] [Zheng, Yueting]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, China
  • [ 5 ] [Chen, Wei]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, China
  • [ 6 ] [Hu, Hailong]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, China
  • [ 7 ] [Guo, Tailiang]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, China
  • [ 8 ] [Li, Fushan]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, China
  • [ 9 ] [Wu, Chaoxing]Department of Electronic Engineering, Hanyang University, Seoul, Korea, Republic of
  • [ 10 ] [Kim, Tae Whan]Department of Electronic Engineering, Hanyang University, Seoul, Korea, Republic of

Reprint 's Address:

  • [li, fushan]institute of optoelectronic technology, fuzhou university, fuzhou, china

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Source :

IEEE Electron Device Letters

ISSN: 0741-3106

Year: 2019

Issue: 10

Volume: 40

Page: 1610-1613

4 . 2 2 1

JCR@2019

4 . 1 0 0

JCR@2023

ESI HC Threshold:150

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 7

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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