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author:

Zhang, J. (Zhang, J..) [1] | Zheng, Y. (Zheng, Y..) [2]

Indexed by:

EI

Abstract:

A high-energy electron beam was produced by a multi-gap pseudospark device under high breakdown voltages. In this work, a simulation model was developed to ascertain the mechanism of the discharge process in the multi-gap pseudospark, which was verified by the triggered multi-gap pseudospark discharge experiment. The characteristics of the plasma were investigated for different anode voltages and pressures. Results suggest the formation of a virtual anode in the cathode aperture during the discharge process, followed by the release of an electron from the plasma in the triggered hollow cavity. The propagation velocity of the ionization wave stimulated by the electron beam is increased with pressure and applied voltage on the anode. The highest density of the particles was found in the region of the cathode aperture. The densities of the particles in the aperture of the intermediate electrodes are higher than at the right adjacent side gaps when the entire gap space is filled with the plasma. The peak of the electron distribution function is found to be situated at higher energies at the beginning of discharge, then the electron distribution function gets shifted to lower energies on the completion of discharge. © 2019, Springer Science+Business Media, LLC, part of Springer Nature.

Keyword:

Anodes Carrier concentration Cathodes Distribution functions Electric discharges Electron beams Electron energy levels Electrons Ionization

Community:

  • [ 1 ] [Zhang, J.]School of Aerospace Science and Technology, Xidian University, Xi’an; 102206, China
  • [ 2 ] [Zheng, Y.]College of Electrical Engineering and Automation, Fuzhou University, Fuzhou; 350108, China

Reprint 's Address:

  • [zheng, y.]college of electrical engineering and automation, fuzhou university, fuzhou; 350108, china

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Source :

Plasma Chemistry and Plasma Processing

ISSN: 0272-4324

Year: 2019

Issue: 4

Volume: 39

Page: 969-984

2 . 1 7 8

JCR@2019

2 . 6 0 0

JCR@2023

ESI HC Threshold:184

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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