The　film-under-gate　field　emission　arrays　(FEA)　are　fabricated　on　the　glass　substrates　by　conventional　photolithography,　anodic　oxidation　and　stripping　method.　SnO2　emitters　are　migrated　on　the　cathode　of　film-under-gate　triode　by　screen　printing.　The　images　of　film-under-gate　FEA　with　SnO2　emitters　are　measured　by　the　optical　microscopy　and　scanning　electron　microscopy　(SEM).　The　electron　trajectory　in　this　triode　is　simulated　by　ANSYS.　It　shows　that　the　SnO2　emitters　by　screen　printing　are　uniformly　distributed　on　the　surface　of　cathode.　The　electron　beam　size　gradually　becomes　small　with　the　increase　of　anode　voltage　and　gradually　becomes　large　with　the　increase　of　gate　voltage.　The　cathode　plate　and　anode　plate　are　made　of　a　5　inch　monochromatic　film-under-gate　field　emission　displays　(FED)　panel　and　its　field　emission　performance　are　investigated.　It　indicates　that　the　FED　with　SnO2　emitters　can　achieve　full-screen　light　emission　when　the　gate　voltage　and　anode　voltage　are　140　V　and　2000　V,　respectively,　at　the　anode-cathode　spacing　of　1100　μm.　In　addition,　the　maximum　anode　current　of　fabricated　device　can　come　to　232　μA　and　the　highest　luminance　is　approximately　270　cd/m2.　Moreover,　the　emission　current　fluctuation　is　less　than　5%　for　400　min,　which　shows　that　the　film-under-gate　field　emission　displays　with　SnO2　emitters　by　screen　printing　have　a　good　field　emission　characteristics　and　good　application　prospects.