Grain growth mechanism of SiC in 2D CF/SiC composites prepared by liquid Si infiltration - Details

author：

Jiang, Pinyi (Jiang, Pinyi.) ^[1] | Liu, Haihua (Liu, Haihua.) ^[2] | Huang, Xiangdong (Huang, Xiangdong.) ^[3] (Scholars：黄向东)

Indexed by：

EI Scopus PKU CSCD

Abstract：

2D　CF/SiC　composites　were　prepared　by　liquid　silicon　infiltration.　XRD　analysis　revealed　that　SiC　only　presents　as　β　phase　in　composites.　The　mixed　solution　of　K3Fe(CN)6　and　KOH　in　the　same　mass　ratio　was　used　to　corrosive　the　material.　SEM　images　show　that　coarse　and　fine　two　morphological　of　the　grains　exist　in　2D　CF/SiC　composites.　It＇s　conclude　that　distinguishing　shapes　of　SiC　are　produced　by　two　different　growth　theory:　silicon　atoms　diffuse　into　carbon　through　the　vacancy　mechanism　which　leads　to　the　appearance　of　amorphous　SiC.　As　heat-retaining　time　increasing,　amorphous　SiC　gradually　transforms　into　the　crystalline　state.　After　the　carbon　atoms　diffuse　through　the　silicon　carbide　layer,　carbon　atoms　dissolve　in　the　liquid　silicon　and　exist　in　the　form　of　C-Si　group.　Under　the　influence　of　temperature　gradient　and　concentration　gradient,　Si-C　group　move　farther　away　from　the　C/SiC　interface　and　begin　to　nucleate　after　reach　saturation.Coarse　silicon　carbide　crystals　are　formed　by　the　dissolution-precipitation　mechanism,　which　accompany　the　emergence　of　stacking　fault.　©　2017,Chinese　Society　for　Composite　Materials.　All　right　reserved.

Keyword：

Amorphous silicon Atoms Carbon Crystalline materials Diffusion Dissolution Grain growth Iron compounds Liquids Potassium hydroxide Silicon carbide Stacking faults

Community：

[ 1 ] [Jiang, Pinyi]College of Materials Sciences and Engineering, Fuzhou University, Fuzhou; 350116, China
[ 2 ] [Liu, Haihua]College of Materials Sciences and Engineering, Fuzhou University, Fuzhou; 350116, China
[ 3 ] [Huang, Xiangdong]College of Materials Sciences and Engineering, Fuzhou University, Fuzhou; 350116, China