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author:

Guo, Zhiyong (Guo, Zhiyong.) [1] | Panda, Dillip K. (Panda, Dillip K..) [2] | Gordillo, Monica A. (Gordillo, Monica A..) [3] | Khatun, Amina (Khatun, Amina.) [4] | Wu, Hui (Wu, Hui.) [5] | Zhou, Wei (Zhou, Wei.) [6] | Saha, Sourav (Saha, Sourav.) [7]

Indexed by:

EI

Abstract:

A new honeycomb-shaped electroactive metal-organic framework (MOF) has been constructed from an electron deficient naphthalenediimide (NDI) ligand equipped with two terminal salicylic acid groups. π-Intercalation of electron-rich planar tetrathiafulvalene (TTF) guests between the NDI ligands stacked along the walls lowers the electronic band gap of the material by ca. 1 eV. An improved electron delocalization through the guest-mediated π-donor/acceptor stacks is attributed to the diminished band gap of the doped material, which forecasts an improved electrical conductivity. © 2017 American Chemical Society.

Keyword:

Crystalline materials Electric conductivity Energy gap Ligands Naphthalene Organic polymers Organometallics Salicylic acid

Community:

  • [ 1 ] [Guo, Zhiyong]College of Materials Science and Engineering, Fuzhou University, Fuzhou, Fujian; 350002, China
  • [ 2 ] [Panda, Dillip K.]Department of Chemistry, Clemson University, Clemson; SC; 29634, United States
  • [ 3 ] [Gordillo, Monica A.]Department of Chemistry, Clemson University, Clemson; SC; 29634, United States
  • [ 4 ] [Khatun, Amina]Department of Chemistry, Clemson University, Clemson; SC; 29634, United States
  • [ 5 ] [Wu, Hui]NIST, Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg; MD; 20899, United States
  • [ 6 ] [Zhou, Wei]NIST, Center for Neutron Research, National Institute of Standards and Technology, Gaithersburg; MD; 20899, United States
  • [ 7 ] [Saha, Sourav]Department of Chemistry, Clemson University, Clemson; SC; 29634, United States

Reprint 's Address:

  • [zhou, wei]nist, center for neutron research, national institute of standards and technology, gaithersburg; md; 20899, united states

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Source :

ACS Applied Materials and Interfaces

ISSN: 1944-8244

Year: 2017

Issue: 38

Volume: 9

Page: 32413-32417

8 . 0 9 7

JCR@2017

8 . 5 0 0

JCR@2023

ESI HC Threshold:306

JCR Journal Grade:1

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 73

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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