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author:

Song, Yingpan (Song, Yingpan.) [1] | Feng, Miao (Feng, Miao.) [2] | Zhan, Hongbing (Zhan, Hongbing.) [3]

Indexed by:

EI

Abstract:

The influence of graphene oxide geometry on electrochemical performance is of great interest, but there are few reports on this subject. Three different members of the graphene oxide family, graphene oxide nanosheets, graphene oxide nanoribbons, and graphene oxide quantum dots were comparatively investigated as electrode materials to systematically study the effect of geometric structure. The results showed that, as the geometric structure varies, the three graphene oxide materials possess different electrical conductivities, various defect densities and oxygen contents, as well as diverse electrode surface chemistry and microstructures, which combine together to result in the distinct electrochemical responses for the modified electrodes, depending on the redox system involved. This work broadens the method of studying the electrochemical performance of many other materials from the perspective of geometry. © 2015 Elsevier B.V. All rights reserved.

Keyword:

Defect density Electrochemical electrodes Electrochemistry Geometry Graphene Microstructure Redox reactions Semiconductor quantum dots Surface chemistry

Community:

  • [ 1 ] [Song, Yingpan]College of Materials Science and Engineering, Fuzhou University, 2 Xueyuan Road, Fuzhou; Fujian; 350116, China
  • [ 2 ] [Feng, Miao]College of Materials Science and Engineering, Fuzhou University, 2 Xueyuan Road, Fuzhou; Fujian; 350116, China
  • [ 3 ] [Zhan, Hongbing]College of Materials Science and Engineering, Fuzhou University, 2 Xueyuan Road, Fuzhou; Fujian; 350116, China

Reprint 's Address:

  • [zhan, hongbing]college of materials science and engineering, fuzhou university, 2 xueyuan road, fuzhou; fujian; 350116, china

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Source :

Electrochemistry Communications

ISSN: 1388-2481

Year: 2015

Volume: 56

Page: 38-42

4 . 5 6 9

JCR@2015

4 . 7 0 0

JCR@2023

ESI HC Threshold:265

JCR Journal Grade:1

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count: 10

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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