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Abstract：
In this study, we fabricated and analyzed resistance switching characteristics for resistive random access memory (ReRAM) cell with Ta dopant into silicon oxide layer by co-sputtering at room temperature. From the current-voltage measurements, it was found that the current conduction in high resistive state was first dominated by Ohmic conduction caused by the intrinsic carriers in the Ta:SiOx thin film and then turned to space-charge-limited-current (SCLC) mechanism. In low resistance state (LRS), the current conduction mechanism from higher voltage to lower voltage were dominated by Fowler-Nordheim (F-N) tunneling and then SCLC mechanism, and finally dominated by Ohmic conduction mechanism. Furthermore, it was found that the Ti/Ta:SiOx/Pt RRAM cell fabricated in this study was durable and reliable. © 2014 Elsevier Ltd. All rights reserved.
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Materials Science in Semiconductor Processing
ISSN： 1369-8001
Year： 2014
Volume： 27
Page： 293-296
1 . 9 5 5
JCR@2014
4 . 2 0 0
JCR@2023
ESI HC Threshold：355
JCR Journal Grade：2
CAS Journal Grade：3
Cited Count：
SCOPUS Cited Count： 11
ESI Highly Cited Papers on the List： 0 Unfold All
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30 Days PV： 0
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